Abstract: A system and method for scheduling operations using speculative data operands. In one embodiment, a system may include a scheduler configured to store a speculative source tag and a non-speculative source tag for an operand of an operation and an execution core configured to execute operations issued by the scheduler and to output result tags identifying operands generated by executing the operations. The scheduler may be configured to determine whether the operation is ready to issue by comparing the speculative source tag, but not the non-speculative source tag, to the result tags output by the execution core unless an incorrect speculation has been detected. If an incorrect speculation has been detected, the scheduler may be configured to determine whether the operation is ready to issue by comparing the non-speculative source tag, but not the speculative source tag, to the result tags output by the execution core.

Abstract: A method of simulating operation of a bitcell includes determining sensitivities of a bitcell model to different component characteristics and device parameters, such as device temperature, operating voltage, and process characteristics. The determined sensitivities are normalized, so that each normalized value represents the relative sensitivity of the bitcell, under the simulated device parameters, to the component characteristic associated with the value. The normalized sensitivity values can be scaled based on a tolerance factor, and the adjusted sensitivities used to model the behavior of each component of the bitcell in subsequent simulations.

Abstract: Embodiments of a power consumption reduction process for memory interfaces are described. A power management process reduces the amount of time that current flows in a high or low terminated, current or voltage mode unipolar bus interface by reducing the amount of time the bus remains in a logic state that requires current flow.

Abstract: By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.

Abstract: Instructions involving a relatively significant data transfer or a particular type of data transfer via a cache result in the application of a restricted access policy to control access to one or more partitions of the cache so as to reduce or prevent the overwriting of data that is expected to be subsequently used by the cache or by a processor. A processor or other system component may assert a signal which is utilized to select between one or more access policies and the selected access policy then may be applied to control access to one or more ways of the cache during the data transfer operation associated with the instruction. The access policy typically represents an access restriction to particular cache partitions, such as a restriction to one or more particular cache ways or one or more particular cache lines.

Abstract: A memory subsystem includes a master controller that includes a pseudo random bit sequence (PRBS) generator having a plurality of output taps and an exclusive-OR (XOR) unit. The memory subsystem also includes a memory device that is coupled to the master controller via a plurality of single ended bidirectional data paths. The master controller may scramble a plurality of data bits using the PRBS generator and the XOR unit prior to writing the plurality of data bits to the memory device. In addition, the master controller may perform an XOR between each bit of the plurality of data bits and a respective output tap of the PRBS generator prior to conveyance on a respective path of the plurality of single ended bidirectional data paths.

Abstract: By forming metallization structures on the basis of an imprint technique, in which via openings and trenches may be commonly formed, a significant reduction of process complexity may be achieved due to the omission of at least one further alignment process as required in conventional process techniques. Furthermore, the flexibility and efficiency of imprint lithography may be increased by providing appropriately designed imprint molds in order to provide via openings and trenches exhibiting an increased fill capability, thereby also improving the performance of the finally obtained metallization structures with respect to reliability, resistance against electromigration and the like.

Abstract: A transceiver (222) includes a receive circuit (320), a transmit circuit (340), a shared delay locked loop (DLL) (360), and a controller (210). The receive circuit (320) has a first input coupled to an external data terminal, a second input coupled to an external data strobe terminal, and an output coupled to an internal data terminal. The transmit circuit (340) has a first input coupled to the internal data terminal, a second input for receiving an internal clock signal, a first output coupled to the external data terminal, and a second output coupled to the external data strobe terminal. The controller (210) enables the shared DLL (360) for use by the receive circuit (320) during a receive cycle, and enables the shared DLL (360) for use by the transmit circuit (340) during a transmit cycle.

Abstract: A method of forming multiple conductive structures in a semiconductor device includes forming spacers adjacent side surfaces of a mask, where the mask and the spacers are formed on a conductive layer. The method also includes etching at least one trench in a portion of the conductive layer not covered by the spacers or the mask. The method may further include depositing a material over the semiconductor device, removing the mask and etching the conductive layer to remove portions of the conductive layer not covered by the spacers or the material, where remaining portions of the conductive layer form the conductive structures.

Abstract: A processor unit and a coprocessor unit are disclosed. In one embodiment, the processor unit includes a functional unit that receives a set of instructions in an instruction stream and provides the set of instructions to the coprocessor unit. The coprocessor executes the instructions and initiates transmission of a set of execution results corresponding to the set of instructions to the processor unit's functional unit. The processor functional unit may be coupled to the coprocessor unit through a shared bus circuit implementing a packet-based protocol. The processor unit and the coprocessor unit may share a coherent view of system memory. In various embodiments, the functional unit may alter entries in a translation lookaside buffer (TLB) located in the coprocessor unit, resume and suspend a thread executing on the coprocessor unit, etc.

Abstract: An integrated circuit. The integrated circuit includes a plurality of logic circuits. The integrated circuit further includes a scan chain including a plurality of scan elements coupled in series, wherein the scan chain is configured to load stimulus data to be applied to the logic circuits for testing. The scan chain is further configured to capture data subsequent to applying the stimulus data. The integrated circuit also includes an embedded memory having a read port, wherein the read port is coupled to one or more of the plurality of logic circuits via a read path. The embedded memory includes a virtual entry having a plurality of scan-controllable storage elements. During testing, the virtual entry is operable to apply transition data to the read path in order to cause logic state transitions in the one or more logic circuits in the read path.

Abstract: By providing thermoelectric elements, such as Peltier elements, in a semiconductor device, the overall heat management may be increased. In some illustrative embodiments, the corresponding active cooling/heating systems may be used in a stacked chip configuration to establish an efficient thermally conductive path between temperature critical circuit portions and a heat sink of the stacked chip configuration.

Abstract: Various semiconductor chip arrangements and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip that has an external peripheral wall to a first side of a substrate. A first metallic ring is coupled to the first side of the substrate. The first metallic ring has an internal peripheral wall that frames the semiconductor chip and is separated from the external peripheral wall by a gap. The first metallic ring has a coefficient of thermal expansion less than about 6.0 10?6 K?1.

Abstract: Timing delays in a double data rate (DDR) dynamic random access memory (DRAM) controller (114, 116) are trained. A left edge of passing receive enable delay values is determined (530). A final value of a receive data strobe delay value and a final value of a transmit data delay value are trained (540). A right edge of passing receive enable delay values is determined using a working value of the receive data strobe delay (550); and a final receive enable delay value intermediate between the left edge of passing receive enable delay values and the right edge of passing receive enable delay values is set (560).

Abstract: In one embodiment, an input/output (I/O) memory management unit (IOMMU) comprises at least one memory and control logic coupled to the memory. The memory is configured to store translation data corresponding to one or more I/O translation tables stored in a memory system of a computer system that includes the IOMMU. The control logic is configured to translate an I/O device-generated memory request using the translation data. The translation data includes a type field indicating one or more attributes of the translation, and the control logic is configured to control the translation responsive to the type field.

Abstract: By providing a protection layer at the bevel region, the deposition of polymer materials during the patterning process of complex metallization structures may be reduced. Additionally or alternatively, a surface topography may be provided, for instance in the form of respective recesses, in order to enhance the degree of adhesion of any materials deposited in the bevel region during the manufacturing of complex metallization structures. Advantageously, the provision of the protection layer providing the reduced polymer deposition may be combined with the modified surface topography.

Abstract: In one embodiment, a processor comprises an execution core configured to detect a freeze event responsive to an error indication, an ignore error indication, and an instruction in a guest. The instruction belongs to a predefined subset of instructions associated with the error indication and the ignore error indication. The execution core is configured to exit the guest in response to detecting the freeze event. In some embodiments, the error indication and the ignore indication may be stored in one or more registers in the processor. In some embodiments, the instruction is a floating point instruction, the error indication is a floating pointer error indication, and the ignore error indication is an ignore floating point error indication. In some embodiments, the error indication may correspond to an error signal output by the processor, and the ignore error indication may correspond to an ignore error signal input to the processor.

Abstract: Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.

Abstract: An integrated circuit communications interface operable consistent with multiple data transmission protocols includes error detection circuitry that implements a cyclic redundancy check (i.e., CRC) function. The error detection circuitry generates a checksum based, at least in part, on a selected one of the multiple data transmission protocols. The error detection circuitry includes at least one circuit that generates a digital code according to an operation including terms common to the multiple data transmission protocols. That digital code is combined with a selected digital code to generate the CRC. The selected digital code is generated by an individual circuit corresponding to a respective one of the multiple data transmission protocols. The individual circuit generates the selected digital code according to an operation including at least terms exclusive to the respective one of the multiple data transmission protocols.

Abstract: By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer material, such as silicon dioxide, may be formed prior to depositing the interlayer dielectric material on the basis of SACVD, thereby creating enhanced uniformity during the deposition process when depositing the interlayer dielectric material on dielectric layers having different high intrinsic stress levels. Consequently, the reliability of the interlayer dielectric material may be enhanced while nevertheless maintaining the advantages provided by an SACVD deposition.