Abstract: A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical sidewalls. An absorbing material is deposited upon one or more of the vertical sidewalls so that light in an incident direction to an upper surface of the substrate will be absorbed by the absorbing material, resulting in light blocking features. One or more horizontal surfaces are formed upon one or more of the three-dimensional features, which allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.

Abstract: A computer system includes a first and a second integrated circuit coupled by a communication link. The communication link operates in a power savings mode in which data is not transmitted over the link. Periodically, the communication link enters a training phase in which training patterns are transmitted over the communication link for a predetermined time period. The communication link returns to the power savings mode after the predetermined time period has elapsed. At least one sideband signal, separate from the communication link, and coupled between the first and second integrated circuits, is used to indicate when to enter the training phase from the power savings mode and exit the training phase and return to the power savings mode.

Abstract: A technique for managing power consumption of a cache memory system dynamically adjusts the size of the cache memory system according to an energy level of an energy storage device. In at least one embodiment of the invention, an apparatus includes a dynamically scalable cache memory circuit including at least one cache memory circuit having an effective cache size selectable from a plurality of cache sizes. The apparatus includes a control circuit responsive to an energy level indicator of at least an approximate energy level of an energy storage device configured to provide energy to the dynamically scalable cache memory circuit. The control circuit is configured to select the effective cache size based at least in part on the energy level indicator.

Abstract: Field effect transistors and methods for fabricating field effect transistors are provided. A method, in accordance with an exemplary embodiment of the invention, comprises forming a polycrystalline silicon gate electrode overlying a silicon substrate. The gate electrode has two parallel sidewalls. Two sidewall spacers are fabricated overlying the silicon substrate. Each of the two sidewall spacers has a sidewall that is adjacent to one of the two parallel sidewalls of the gate electrode. A portion of the gate electrode between the two sidewall spacers is removed.

Abstract: Embodiments of a filtering method and apparatus for anti-aliasing as described herein take advantage of improved existing hardware by using as input the data stored in the multisampling anti-aliasing (MSAA) buffers after rendering. The standard hardware box-filter is then replaced with a more intelligent resolve implemented using shader programs. Embodiments find scene edges using existing samples generated by Graphics Processing Unit (GPU) hardware. Using samples from a footprint larger than a single pixel, a gradient is calculated matching the direction of an edge. A non-linear filter over contributing samples in the direction of the gradient gives the final result.

Abstract: According to one exemplary embodiment, a p-channel germanium on insulator (GOI) one transistor memory cell comprises a buried oxide (BOX) layer formed over a bulk substrate, and a gate formed over a gate dielectric layer situated over a germanium layer formed over the buried oxide (BOX) layer. A source region is formed in the germanium layer adjacent to a channel region underlying the gate and overlaying the BOX layer, and a drain region is formed in the germanium layer adjacent to the channel region. The source region and the drain region are implanted with a p-type dopant. In one embodiment, a p-channel GOI one transistor memory cell is implemented as a capacitorless dynamic random access memory (DRAM) cell. In one embodiment, a plurality of p-channel GOI one transistor memory cells are included in a memory array.

Abstract: A metal oxide semiconductor transistor device having a reduced gate height is provided. One embodiment of the device includes a substrate having a layer of semiconductor material, a gate structure overlying the layer of semiconductor material, and source/drain recesses formed in the semiconductor material adjacent to the gate structure, such that remaining semiconductor material is located below the source/drain recesses. The device also includes shallow source/drain implant regions formed in the remaining semiconductor material, and epitaxially grown, in situ doped, semiconductor material in the source/drain recesses.

Abstract: A computer system includes a processor which may initialize a secure execution mode by executing a security initialization instruction. Further, the processor may operate in the secure execution mode by executing a secure operating system code segment. The computer system also includes an input/output (I/O) interface coupled to the processor via an I/O link. The I/O interface may receive transactions performed as a result of the execution of the security initialization instruction. The transactions include at least a portion of the secure operating system code segment. The I/O interface may also determine whether the processor is a source of the transactions. The computer system further includes a security services processor coupled to the I/O interface via a peripheral bus. The I/O interface may convey the transactions to the security services processor dependent upon determining that the processor is the source of the transactions.

Abstract: The initialization of a computer system including a secure execution mode-capable processor includes storing a secure operating system code segment loader to a plurality of locations corresponding to a particular range of addresses within a system memory. The method also includes executing a security initialization instruction. Executing the security initialization instruction may cause several operations to be performed including transmitting a start transaction including a base address of the particular range of addresses. In addition, executing the security instruction may also cause another operation to be performed including retrieving the secure operating system code segment loader from the system memory and transmitting the secure operating system code segment loader for validation as a plurality of data transactions.

Abstract: The halo implant technique described herein employs a halo implant mask that creates a halo implant shadowing effect during halo dopant bombardment. A first transistor device structure and a second transistor device structure are formed on a wafer such that they are orthogonally oriented to each other. A common halo implant mask is created with features that prevent halo implantation of the diffusion region of the second transistor device structure during halo implantation of the diffusion region of the first transistor device structure, and with features that prevent halo implantation of the diffusion region of the first transistor device structure during halo implantation of the diffusion region of the second transistor device structure. The orthogonal orientation of the transistor device structures and the pattern of the halo implant mask obviates the need to create multiple implant masks to achieve different threshold voltages for the transistor device structures.

Abstract: A method and system for generating security rules for implementation by a rule interpretation engine to define accessibility to one or more aspects of an Enterprise System is described. The method and system allow a security officer to graphically indicate an operation to be affected by the security rule being defined; a specific aspect of the system affected by the rule; a security regulation to be implemented by the rule; and an access type to be permitted by the rule.

Abstract: A communication protocol that allows an inserted control packet to immediately follow another control packet can be more robust to single bit errors when the two types of control packets can be distinguished using transmitted control signals to perform packet framing without having to examine the contents of the control packet.

Abstract: By forming a tin and nickel-containing copper alloy on an exposed copper surface, which is treated to have a copper oxide thereon, a reliable and highly efficient capping layer may be provided. The tin and nickel-containing copper alloy may be formed in a gaseous ambient on the basis of tin hydride and nickel, carbon monoxide in a thermally driven reaction.

Abstract: A semiconductor device comprises metal lines in a specific metallization layer which have a different thickness and thus a different resistivity in different device regions. In this way, in high density areas of the device, metal lines of reduced thickness may be provided in order to comply with process requirements for achieving a minimum pitch between neighboring metal lines, while in other areas having less critical constraints with respect to minimum pitch, a reduced resistivity may be obtained at reduced lateral dimensions compared to conventional strategies. For this purpose, the dielectric material of the metallization layer may be appropriately patterned prior to forming respective trenches or the etch behavior of the dielectric material may be selectively adjusted in order to obtain differently deep trenches.

Abstract: An image processing system provides a method for processing an image including classifying the image, comparing the image to stored images, storing the image if the image does not match one of the stored images, and storing a link to a stored image if the image matches one of the stored images.

Abstract: A substrate labeling system includes a first laser assembly having a first laser and a first lens, a second laser assembly having a second laser and a second lens, and a controller for directing the first laser and the second laser incident on a portion of a subsurface of a substrate to mark the substrate without generating particle defects on a surface of the substrate.

Abstract: By patterning the underbump metallization layer stack on the basis of a dry etch process, significant advantages may be achieved compared to conventional techniques involving a highly complex wet chemical etch process. In particular embodiments, a titanium tungsten layer or any other appropriate last layer of an underbump metallization layer stack may be etched on the basis of a plasma etch process using a fluorine-based chemistry and oxygen as a physical component. Moreover, appropriate cleaning processes may be performed for removing particles and residues prior to and after the plasma-based patterning process.

Abstract: By forming a strained semiconductor layer in a PMOS transistor, a corresponding compressively strained channel region may be achieved, while, on the other hand, a corresponding strain in the NMOS transistor may be relaxed. Due to the reduced junction resistance caused by the reduced band gap of silicon/germanium in the NMOS transistor, an overall performance gain is accomplished, wherein, particularly in partially depleted SOI devices, the deleterious floating body effect is also reduced, due to the increased leakage currents generated by the silicon/germanium layer in the PMOS and NMOS transistor.

Abstract: A method and mechanism for performing division. A processor includes a divider configured to perform arithmetic division operations. Prior to dividing a dividend by a divisor, the divider manipulates the dividend and divisor to reduce the number of bits considered and the computations required to perform the division. The divisor is normalized by eliminating sign bits. The dividend is prescaled to eliminate one or more sign bits. Prescaling of the dividend may not be precise as sign bits of the dividend may be shifted out as groups of bits, rather than individual bits. Prescaling of the dividend may be adjusted to account for the fact that the divider considers multiple bits of the dividend at a time. Subsequent to prescaling and adjustment, the dividend may be adjusted in dependence upon the normalization of the divisor. Further adjustment may be utilized to maintain a significance relationship between the divisor and dividend. Subsequent to further adjustment, the division operation may be completed.

Abstract: A test structure includes first and second pluralities of transistors. The first plurality of transistors includes gate electrodes of a first length. The second plurality of transistors includes gate electrodes of a second length different than the first length. A channel area of the transistors in the first plurality is substantially equal to a channel area of the transistors in the second plurality. A method for using the test structure includes measuring a performance metric of the first and second pluralities of transistors. Variation in the performance metric associated with the first plurality of transistors is compared to variation in the performance metric associated with the second plurality of transistors to identify a random length variation component associated with the first plurality of transistors.