Abstract: A manufacturing method of a semiconductor structure is disclosed, which includes: an initial structure is provided; a filling layer covering a spacer is formed on the initial structure; a filling layer with a first preset thickness is removed at a high first etching rate through a first etching process, then a filling layer with a second preset thickness is removed at a low second etching rate through a second etching process, and the partial spacer is exposed; and the filling layer and the spacer are patterned.

Abstract: The present disclosure relates to the technical field of semiconductor manufacturing, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a plurality of dies, where the plurality of dies are stacked layer by layer; one or more interlayer dielectric layers, where each of the interlayer dielectric layers is located between adjacent dies; and a plurality of conductive through vias, where at least one of the plurality of conductive through vias penetrates at least two layers of dies and electrically connects the at least two layers of dies.

Abstract: Embodiments of the present disclosure provide a control method and apparatus for hybrid process recipes, and a device and a medium. The control method includes: acquiring hybrid process recipe operation groups associated with process recipes operated by etching chambers of an etching machine, where different process recipes correspond to different hybrid process recipe operation groups; acquiring a switching rule of different hybrid process recipe operation groups; and controlling, based on a reserved process recipe for a real-time reserved demand of a target etching chamber and a requirement of the switching rule, the etching machine to automatically switch to a target hybrid process recipe operation group associated with the reserved process recipe.

Abstract: The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The method includes: providing a base, at least one shallow trench isolating structure being formed in the base and several active regions arranged at an interval being isolated by the shallow trench isolating structure in the base; forming a first trench in the base, a part of the active regions being exposed in the first trench; forming a first conducting structure in the first trench; forming a first dielectric layer on the base; forming a second trench in the first dielectric layer, the first conducting structure being exposed in the second trench and a width of a top of the second trench being greater than a width of a top of the first trench; and forming a second conducting structure in the second trench.

Abstract: A method for forming a double-sided capacitor structure includes: providing a base, the base including a substrate, a plurality of capacitor contacts located in the substrate, a stack structure located on a surface of the substrate and a plurality of capacitor holes running through the stack structure and exposing the capacitor contacts, the stack structure including sacrificial layers and support layers which are stacked alternately; successively forming a first electrode layer, a first dielectric layer and a second electrode layer on inner walls of the capacitor holes; forming a first conductive filling layer in the capacitor holes; forming an auxiliary layer for sealing the capacitor holes; removing a part of the auxiliary layers and several of the support layers and the sacrificial layers to expose the first electrode layer; and, forming a second dielectric layer and a third electrode layer.

Abstract: The present disclosure discloses a semiconductor device manufacturing method and a semiconductor device, relating to the technical field of semiconductors. The method includes: providing a semiconductor substrate, the semiconductor substrate comprising a shallow trench and active areas isolated from the shallow trench; forming an oxygen-containing layer on exposed outer surfaces of the shallow trench and the active areas; filling a first sacrificial layer of a set height in the shallow trench comprising the oxygen-containing layer on its surface; forming an etch stop layer on an upper surface of the first sacrificial layer; removing the first sacrificial layer below the etch stop layer to form an air gap; filling an isolation layer on the etch stop layer in the shallow trench to form a shallow trench isolation(STI) structure containing the air gap; and etching the active areas and the (STI) structure to form wordline trenches.

Abstract: A memory chip is applied to the memory system, and the memory chip is configured to perform counting and obtain a count value after the memory chip is powered on and started, wherein the count value is used to represent a process corner of the memory chip, the memory chip further has a reference voltage with an adjustable value, the value of the reference voltage is adjustable based on the count value, and the memory chip adjusts, based on the reference voltage, a delay from reading out data from a memory cell to outputting the data through a data port.

Abstract: The present disclosure provides a method of manufacturing a semiconductor structure and a semiconductor structure, relating to the technical field of semiconductors. The method of manufacturing a semiconductor structure includes: providing a substrate; forming multiple active pillars arranged in an array on the substrate, where an outer surface layer of each of the active pillars has a concave-convex surface; forming a gate oxide layer on the substrate, where a filling region is formed between two adjacent active pillars in the same row; forming a word line and a first dielectric layer in the filling region; exposing a top surface of each of the active pillars; forming a contact layer on the top surface of each of the active pillars; and forming a capacitor structure on the contact layer.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a preset memory space if an error occurs in the data to be read out, and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.

Abstract: The disclosure relates to a semiconductor structure and a method for forming the same. The semiconductor structure includes: a substrate; a storage array located on the substrate and including a plurality of memory cells arranged in an array along a first direction and a second direction, each memory cell including a transistor structure that includes a gate electrode and an active area that includes a first active area and a second active area distributed on opposite sides of the gate electrode along the first direction; a word line extending along the second direction, being continuously and electrically connected with a plurality of gate electrodes in the memory cells arranged at intervals along the second direction; a bit line extending along the first direction and located on outside of each of the memory cells along the second direction.

Abstract: The disclosure relates to the field of semiconductor technologies, and to a semiconductor structure and a method for forming the same, and a memory. The semiconductor structure of the disclosure includes a substrate, a word line structure, a conductive contact structure and a buffer layer. The substrate includes an active area; the active area includes a channel area, and a source area and a drain area that are respectively distributed on two sides of the channel area; the channel area has a word line groove; the word line structure is located in the word line groove; the conductive contact structure is connected to a top of the drain area; and the buffer layer is located between the conductive contact structure and the word line structure.

Abstract: A circuit for receiving data includes a voltage generating circuit, a data circuit and a selection circuit. The voltage generating circuit is configured to output, in a first mode, a first reference voltage signal and a second reference voltage signal. The data circuit is configured to compare the data signal with the first reference voltage signal, output a first target signal, compare the data signal with the second reference voltage signal, and output a second target signal. The data signal is one of a plurality of data signals arranged in series. The selection circuit is configured to determine one of the first target signal and the second target signal as a target data signal based on a level state of a previous data signal of the data signal.

Abstract: A write leveling circuit applied to a memory includes: a write signal generation circuit configured to perform delay processing on a first write signal according to a received first clock signal, and output a second write signal; a delay circuit configured to perform delay processing on a received first data strobe signal, and output a second data strobe signal; and a sampling circuit connected to both the delay circuit and the write signal generation circuit, and configured to output a first sampling signal according to the received second data strobe signal and the received second write signal. The sampling circuit is further configured to receive the first data strobe signal, and output a second sampling signal according to the first data strobe signal and the second write signal.

Abstract: A delay locked loop includes a preprocessing module, a first regulable delay line, a second regulable delay line and a first regulation module. The preprocessing module is configured to receive an initial clock signal, preprocess the initial clock signal, and output a first clock signal and a second clock signal. The first regulable delay line is configured to receive the first clock signal, regulate and transmit the first clock signal, and output a first target clock signal. The second regulable delay line is configured to receive the second clock signal, regulate and transmit the second clock signal, and output a second synchronization clock signal. The first regulation module is configured to regulate delay of the second synchronization clock signal based on the first target clock signal, and output a second target clock signal.

Abstract: A semiconductor structure includes a carrier structure, and a stack structure located on the carrier structure. The stack structure includes at least one heat dissipation panel and at least one die module stacked onto one another, and the at least one die module includes at least one die. An area of an orthographic projection of the at least one heat dissipation panel on the carrier structure is greater than an area of an orthographic projection of the at least one die module on the carrier structure.

Abstract: A composite testing machine includes: a burn-in test module, configured to perform a burn-in test on a sample to-be-tested in a first area; and a function test module, configured to perform a function test on the sample to-be-tested in a second area, where the second area at least partially overlaps with the first area.

Abstract: An air knife includes a body structure, at least one through hole is provided in the body structure and serves as an airflow channel, an air inlet end of the airflow channel is in communication with an air supply device, and an airflow direction of an air outlet end of the airflow channel has a preset angle relative to an object to be cleaned.

Abstract: A method for forming a semiconductor structure includes the following operations. A substrate is provided and includes a stacked structure and a first isolation structure that are alternately arranged in a first direction. A grid-like etched groove extending in the first direction is formed in the stacked structure and the first isolation structure, and divides the substrate into a first region and a second region that are arranged sequentially in a second direction. The first direction and the second direction are any two directions in a plane where the substrate is located. A second isolation structure is formed in the grid-like etched groove. A transistor structure and a capacitor structure are respectively formed in the first region and the second region, and are isolated by the second isolation structure.

Abstract: A method for manufacturing a fin transistor structure includes the following: a substrate is provided, a fin part protruding from a top surface of the substrate; an isolation layer is formed on the substrate, a top surface of the isolation layer being lower than a top of the fin part, so that an upper part of the fin part is exposed above the isolation layer; and doping processing is performed on the upper part of the fin part by a diffusion process to form at least one of a source region or a drain region in the upper part of the fin part.

Abstract: A semiconductor package structure includes: a first substrate; a first semiconductor die connected to the first substrate; a second semiconductor die stack structure located on the first semiconductor die, the second semiconductor die stack structure includes a plurality of second semiconductor dies sequentially stacked onto one another in a first direction, a plurality of second conductive bumps being formed on a side of the second semiconductor die stack structure in the first direction, in which the first direction is a direction parallel to a plane where the first substrate is located; and a second substrate, a signal line in the second substrate being connected to the plurality of second conductive bumps, the second substrate being connected to the first substrate in a direction perpendicular to the plane where the first substrate is located.