Abstract: A method of manufacturing a semiconductor test sample includes: providing a product to be analyzed, the product comprises a conductive interconnection layer and a semiconductor doped region located below the conductive interconnection layer; selectively removing a conductive material from the conductive interconnection layer, replacing the conductive material with a non-conductive material and replacing the conductive interconnection layer with an insulating sacrificial layer; and taking the product including both the insulating sacrificial layer and the semiconductor doped region as a semiconductor test sample.

Abstract: A method for identifying a latch-up structure includes the following: in a chip layout, a first N-type heavily doped region connected to a first input/output pad and located in a P-type substrate is found; a first P-type heavily doped region located in an N-well and a second P-type heavily doped region located in the P-type substrate, both of which are adjacent to the first N-type heavily doped region, are found; a second N-type heavily doped region adjacent to the first P-type heavily doped region and located in the N-well is found, wherein the N-well is located on the P-type substrate; and an area formed by the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region, the second N-type heavily doped region, the N-well and the P-type substrate is identified as the latch-up structure.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, and each of the plurality of memory bits is associated with a spare memory cell.

Abstract: This application relates to a data transmission circuit, a method, and a storage device. The data transmission circuit includes a delay module and a mode register data processing unit. The delay module delays a first preset time when receiving a mode register read command, and generates delayed read command. The mode register data processing unit is connected to the delay module, and reads setting parameters from the mode register in response to the mode register read command, and outputs the setting parameters in response to the delayed read command.

Abstract: A simulation method and device, a power wire topology network, and a test circuit involve: a power wire topology network is generated according to a power wire layout, the power wire topology network including a plurality of first layer of metal wires arranged in a transverse direction, a plurality of second layer of metal wires arranged in a longitudinal direction, power child nodes and a parasitic element, the parasitic element being located between the two power child nodes; a minimum voltage of the power input node of each circuit nodule in a circuit corresponding to the power wire topology network is determined, the power input node being one of the power child nodes in each circuit module; and a time sequence simulation is performed according to the minimum voltage of the power input node of each circuit module and the post-simulation circuit network list of an integrated circuit.

Abstract: A method for manufacturing a semiconductor structure includes: a substrate is provided, in which the substrate includes an array region and a peripheral region adjacent to each other, and the array region includes a buffer region connected with the peripheral region; a first dielectric layer, a first supporting layer, a second dielectric layer, a second supporting layer and a third dielectric layer, which are successively stacked onto one another, are formed on the substrate; a groove-type lower electrode, which at least penetrates through the third dielectric layer and the second supporting layer, is formed in the buffer region; the third dielectric layer is removed through a wet etching process; and the second supporting layer in the peripheral region is etched after the third dielectric layer is removed.

Abstract: An address decoding circuit includes a decoding unit corresponding to a bank group and including first NAND gates, an address selection signal outputted by each first NAND gate controls a corresponding bank in the bank group corresponding to the decoding unit. The first NAND gate includes a first input end connected to an address signal of a bank corresponding to the first NAND gate and a second input end connected to an output end of a second NAND gate or a third NAND gate, the second NAND gate includes a first input end connected to an enable signal and a second input end connected to a control signal, and the third NAND gate includes a first input end connected to the enable signal and a second input end connected to an inverted signal of the control signal.

Abstract: A method and a device for testing a memory chip are provided. The method includes: writing test data into memory cells of a memory chip to-be-tested; reading stored data from the memory cells; and generating a test result of the memory chip to-be-tested according to the test data and the stored data; a word line turn-on voltage tested in the memory chip to-be-tested being greater than a standard bit line and word line turn-on voltage of the memory chip to-be-tested, and/or a sense amplification time tested in the memory chip to-be-tested being greater than a standard sense amplification time of the memory chip to-be-tested.

Abstract: A data transmission circuit, a data transmission method, and a storage apparatus are provided. The data transmission circuit includes a check circuit, a comparison circuit, and a data conversion circuit. The check circuit is configured to generate check code data according to first data on a first data line, and combine the first data and the check code data into second data. The comparison circuit is configured to receive the second data and third data on the second data line, and compare the second data with the third data to output a comparison result indicating whether number of different bits between the second data and the third data exceeds a preset threshold. The data conversion circuit is configured to invert the second data and transmit the inverted second data to the second data line when the comparison result is indicative of exceeding the preset threshold.

Abstract: An integrated circuit is provided. The integrated circuit includes: a first data line group, including a plurality of local data lines arranged in an array; a second data line group, including a plurality of complementary local data lines arranged in an array, the plurality of complementary local data lines and the plurality of local data lines respectively transmitting signals having opposite phases; and a plurality of read circuits, configured to read, in response to a read control signal, signals of the local data lines or the complementary local data lines during a read operation, each of the plurality of read circuits being electrically connected to a local data line at a boundary of the first data line group or connected to a complementary local data line at a boundary of the second data line group.

Abstract: A preparation method of the semiconductor structure includes: the substrate including a first area to be etched and a second area to be etched outside the first area to be etched, the etching rate of the first area to be etched and the second area to be etched are different, simultaneously etching the first area to be etched and the second area to be etched at least twice, until an etching depth of one of the first area to be etched and the second area to be etched with a less etching rate is equal to a target etching depth; in at least two etching processes, backfilling a sacrificial material to the first area to be etched and the second area to be etched after a previous etching is completed, removing part of the sacrificial material in a next etching.

Abstract: A method for manufacturing a semiconductor structure includes providing a substrate; forming mutually parallel first trenches extending along a first direction in the substrate and first isolation structures filling the first trenches; forming mutually parallel second trenches extending along a second direction in the substrate and in the first isolation structures, the first and second trenches dividing the substrate to form active pillars, and a depth of the second trenches being less than that of the first trenches; forming second isolation structures alternately arranged with the first isolation structures along the second direction at bottoms of the second trenches, top surfaces of the second isolation structures being lower than bottom surfaces of the second trenches located in the first isolation structures; forming bit line structures on the second isolation structures; and forming word line structures above the bit line structures.

Abstract: Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

Abstract: Sense amplifier, memory and control method are provided. The sense amplifier includes: amplify module configured to amplify voltage difference between bit line and reference bit line when the sense amplifier is in amplifying stage; write module connected to the bit line and the reference bit line, and configured to pull the voltage difference between the bit line and the reference bit line according to data to be written when the sense amplifier is in write stage; controllable power module connected to the amplify module, configured to provide first voltage to the amplify module when the sense amplifier is in non-write stage, and to provide second voltage to the amplify module when the sense amplifier in write stage. Herein, the second voltage is less than the first voltage, and the second voltage is in positive correlation with the drive capability of the write module.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and setting a mark of the address information pointed to by the read command as invalid if an error occurs in the data to be read out, and backing up the address information pointed to by the read command and the mark into a non-volatile memory cell according to a preset rule.

Abstract: Embodiments of the present application provide a testing equipment and a testing method. The testing equipment includes: a plurality of pad groups and a plurality of source measure units. Each of the pad groups has a stress pad. The stress pad is configured to connect an element under test. The source measure unit is configured to send an input signal to the element under test through the stress pad and measure an output signal of the element under test to acquire performance parameters of the element under test. The stress pads of at least two of the pad groups are connected to the corresponding source measure units at the same time. The embodiments of the present application help improve the testing efficiency.

Abstract: The present disclosure provides a delay circuit and a semiconductor device. The delay circuit includes a delay unit and a linear voltage regulator unit; wherein, the delay unit includes an inverting unit and a power supply control unit, and the inverting unit includes an inverting unit and a power supply control unit. The inversion unit receives an input signal and delays the input signal, and the power supply control unit is used for providing a voltage to the inverting unit according to the power supply control signal; the linear voltage stabilization unit is coupled to the delay unit and outputting the power supply control signal according to a reference voltage. The voltage outputs the power control signal. The present disclosure can accurately control the delay time of the delay unit and improve the delay precision of the delay circuit.

Abstract: The present disclosure provides a method, device and system for testing memory devices. The testing method includes: receiving a test instruction, the test instruction being used to characterize a model of a memory device to be tested that is connected to a test platform; selecting, according to the test instruction, a testing method corresponding to the model of the memory device to be tested from a plurality of pre-stored testing methods as a target testing method; and executing the target testing method to test the memory device to be tested.

Abstract: The disclosed test circuit includes: an input terminal, a processing circuit, and an output terminal. The input terminal receives an input signal. The input signal includes a test command for indicating a test target circuit module and an address of the target circuit module. The processing circuit responds to the test command and the target. The address of the circuit module determines the test mode signal, the test mode signal carries the test type, the test mode signal is used to trigger the target circuit module to perform the test corresponding to the test type, and the output terminal sends the test mode signal to the target circuit module according to the address of the target circuit module. Thus, the test mode signal can be accurately transmitted to different circuit modules in the memory chip.

Abstract: A memory is provided. The memory includes banks, each bank includes a U half bank and a V half bank; a first error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of output data of the U half banks and the V half banks; and a second error checking and correcting unit connected with the U half banks and the V half banks and configured to check and correct errors of the output data of the U half banks and the V half banks.