Abstract: A method for programming a memory device is disclosed. In one method embodiment, the present invention receives a measurement from a temperature sensor located near a non-volatile programmable memory device. Next, a transformation is accessed. Then, the measurement from the temperature sensor is processed in conjunction with the transformation to establish a programming time for a memory device as a function of a programming voltage and the temperature of the memory device. The programming voltage is then applied to the memory device for the length of time specified by the programming time during the programming pulse of the memory device to accurately program the device using an optimum amount of current.

Abstract: A configurable input/output interface for a microcontroller. The present invention is an input/output (I/O) pin with a configurable interface to a microprocessor, and to a global mapping which selectively couples functional units on the microcontroller with the I/O pin. The I/O pin can be selectively coupled to the global mapping or to the microprocessor on each clock cycle. The mapping configuration selectively couples a different functional unit or units of the microcontroller to access the I/O pin on each clock cycle. The interface between the I/O pin and the rest of the system can be dynamically configured by software created or modified by a user, or by hardware. The present invention facilitates repositioning pin locations on a microcontroller because it is a software modification rather than a hardware modification. The present invention further enables the microcontroller functions to be configured by the user rather than by the microcontroller vendor.

Abstract: The present invention provides a programmable on-chip resistance. An apparatus of the present invention may utilize an analog scheme and adjusts the termination resistance in real-time. One way of implementing the invention is the use of a single transistor with analog control that may vary the resistance for differential input ports. This may provide a reduction in parasitic capacitance as viewed by a high-speed driver while reducing the requirement of over-driving the gate to reduce the impedance of the transistor.

Abstract: An apparatus comprising a margin logic circuit, one or more discriminator circuits and a sense circuit. The margin logic circuit may be configured to receive a plurality of requests and present one or more control signals. The one or more discriminators may be configured to (i) present one or more leading access signals and (ii) receive the one or more control signals and the plurality of requests. The sense circuit may be configured to receive the one or more leading access signals and the plurality of requests and present grant access signal. The sense circuit may be configured to reduce the effects of metastable conditions.

Abstract: A method for generating parameters for adjusting the frequency of a VCO. A desired carrier frequency may be based off the output of the VCO. The method determines parameters that are operable to adjust the frequency of the VCO, based on the channel number. The channel number may be input into combinatorial logic to determine the parameters. Offsets, which may be scaled, may be added to the channel number before determining the parameters, wherein the frequency of the VCO is further adjusted based on the offset(s). A first parameter may be operable to select a frequency scalar in a circuit with the VCO. A second parameter may be operable to generate a feedback signal for adjusting the frequency of the VCO.

Abstract: Shallow trench isolation methods and corresponding structures are disclosed. According to one embodiment (900) a nitride layer (1006), having an opening (1014), is formed over a silicon substrate (1002). The portion of the substrate (1002) below the opening (1014) is oxidized to form a substrate consuming rounding oxide layer (1018). The formation of the rounding oxide layer (1018) results in rounded edges in the substrate (1002). An isotropic, or alternatively, an anisotropic rounding oxide etch removes the rounding oxide layer (1018) to expose the substrate (1002). A trench (1026) can be formed by applying a silicon etch using the nitride layer (1006) as an etch mask. The trench (1026) can be subsequently filled with a deposited trench isolation material (1030).

Abstract: In one embodiment, a test circuit is coupled to receive a first signal from a signal generator such as a test equipment. The test circuit allows access to one or more terminals of a first integrated circuit, a second integrated circuit, or both based at least on the signal. The test circuit may be in the first integrated circuit. The first integrated circuit and the second integrated circuit may be in a single package. In one embodiment, the test circuit routes signals to and from the second integrated circuit, thus allowing the second integrated circuit to be tested as if it was stand-alone. In one embodiment, the test circuit allows access to otherwise inaccessible terminals of the first integrated circuit, the second integrated circuit, or both.

Abstract: Improved semiconductor integrated circuit random access memory (RAM) features pin-compatible replacement of SRAM devices, while providing low power and high density characteristics of DRAM devices. The refresh operations of a DRAM array are hidden so as to faithfully emulate an SRAM-type interface. The new refresh strategy is based on prohibiting the start of a refresh operation during certain periods but otherwise continuously refreshing the array, rather than affirmatively scheduling refresh at certain times as in the prior art. Short refresh operations are initiated frequently, driven by an internal clock that generates periodic refresh requests, except when a read or write operation is actually accessing the memory array. By isolating the DRAM memory array from I/O structures, external memory accesses are essentially interleaved with refresh operations, rather than temporally segregating them as in prior art.

Abstract: A method for entering test mode of an integrated circuit device is disclosed. In one embodiment of the present invention, after a lockout period, a test controller generates a signal indicating the integrated circuit is willing to enter the test mode. After the signal, the test controller monitors a test interface during a predetermined period of time for a digital password. Then, in response to a valid password being received within the predetermined period, the test controller enters the test mode. In another embodiment, in addition to the above steps, in response to the valid password being received, the test controller generates an acknowledge signal. In one embodiment, the predetermined period of time takes place during a holdoff period after the lockout period. In another embodiment, the test interface is serial.

Abstract: In the present invention a method and circuit are shown to protect flash memory from data corruption during a rapid power down. A circuit element detect the drop in power voltage and signals that any write operation being performed be switched into a programming phase, and at the same time increase the programming voltage to the flash memory to significantly reduce programming time. If the power drop occurs during an erase phase of a write operation, the erase operation is switched to a program operation using old data to program erased cells. If the power drop occurs during a programming phase of the write operation, the programming phase is continued but at a faster rate.

Abstract: According to one embodiment (500), a method of depositing an insulating layer to fill constrained spaces on an integrated circuit is disclosed. Gate structures are formed that include sidewall structures (502 and 504). An insulating layer may then be deposited over the gate structures (506). An insulating layer may be deposited by high density plasma CVD to create a silicon dioxide layer with relatively high levels of phosphorous. An insulating layer formed in this manner may fill constrained spaces and may not include a following reflow step. This may allow for a smaller thermal budget and may reduce process complexity and/or cycle time. In the event the insulating layer is substantially phosphosilicate glass (PSG), the formation of a “cap” layer of undoped silicon oxide may be avoided. Without a cap layer, contact holes may be etched through an insulating layer with a single etch step. This may also reduce process complexity and/or cycle time.

Abstract: A method and an apparatus are described for providing biasing for an amplifier. In an embodiment invention, a bias network comprises an integration circuit to sense a voltage change for an amplifier. The bias network adjusts a bias voltage for the amplifier in response to the voltage change.

Abstract: A method of forming a charge storing layer is disclosed. According to an embodiment, a method may include the steps of forming a first portion of a charge storing layer with a first gas flow rate ratio (step 102), forming at least a second portion of the charge storing layer by changing to a second gas flow rate ratio that is different than the first gas flow rate ratio (step 104), and forming at least a third portion of the charge storing layer by changing to a third gas flow rate ratio that is different than the second gas flow rate ratio (step 106).

Abstract: A peripheral device having bus isolation from a host computer is disclosed. The peripheral device has a microcontroller which receives a plurality of input output (I/O) signals from a plurality of logic devices in the peripheral devices. The microcontroller translates the plurality of I/O signals to signals comprehensible by I/O bus and transmits the translated signal over a serial bus. The peripheral device further includes a first unidirectional to bi-directional converter which receives I/O signals from the microcontroller and directs the signal in accordance with a directional signal from the microcontroller. The optical isolation barrier comprises of a number of optical isolating devices, which isolates the peripheral from the host and other peripherals. The peripheral device further includes a second unidirectional to bi-directional converter which has a separate ground potential then the first unidirectional to bi-directional converter.

Abstract: A method for circuit recovery from overstress conditions, comprising the steps of (A) detecting an event and (B) resetting a device when the event is a first predetermined type and providing recovery when the event is a second predetermined type.

Abstract: A method and process reducing or eliminating electrical leakage between active areas in a semiconductor separated by isolation regions. A method and process are disclosed for the fabrication of an isolation region in a semiconductor. The method and process can be used in the fabrication of isolation regions used for the separation of adjacent active areas in an integrated circuit. A shallow trench is created on the surface of the semiconductor in regions where isolation spaces are to be formed. A layer of silicon dioxide (LINOX) is then grown over the surfaces of the trench. The LINOX covers roughened regions formed along the surfaces of the trench during its formation. The LINOX is then annealed at a temperature above the LINOX deposition temperature for a period of time. Annealing reduces stresses in the LINOX and in the surrounding semiconductor material. Annealing also increases the density of the LINOX. Thus annealing increases the LINOX resistance to gouge during subsequent processing.

Abstract: An apparatus comprising an input section and an output section. The input section may be configured to generate a first control signal and a second control signal in response to an input signal and a select signal. The output section may be configured to generate an output signal in response to the first and second control signals. The output signal may be (i) related to the input signal when in a first mode and (ii) disabled when in a second mode.

Abstract: An apparatus comprising a first logic circuit and a second logic circuit. The first logic circuit may comprise one or more counters and may be configured to synchronize a plurality of input clock signals. The second logic circuit may be configured to detect and present a faster clock signal of the synchronized clock signals.

Abstract: An electro-optical device preferably includes a printed circuit board (PCB) having a cutout region or a rigid region. A leadframe having an electro-optical semiconductor device arranged thereon can be arranged in proximity to the cutout region of the PCB. Alternatively, the electro-optical device can be arranged on the rigid region of the PCB. A lens is preferably arranged over the electro-optical semiconductor device. A connector array can also be arranged on the PCB to communicate electrical signals with an external device. An interface circuit, such as a driver circuit or an amplifier circuit, can also be arranged in close proximity to the electro-optical semiconductor devices on the leadframe or the PCB.

Abstract: The present invention concerns a method for reducing power consumption in a device, comprising the steps of (A) receiving one or more packets, (B) determining a type of each of the one or more packets and (C) suspending, waking, or partially waking the device in response to a particular type of packet.