Abstract: The present invention concerns a method and architecture comprising a first circuit, a second circuit, and a logic circuit coupled to said first and second circuits. The first segment generally comprises a first repeater core configured to operate at one of a plurality of speeds and a first port. The second segment generally comprises a second repeater core configured to operate at one of a plurality of speeds and a second port. A logic circuit may be configured to couple each of the first and second ports to either the first or second repeater core.

Abstract: A circuit is presented comprising a first device and a second device. The first device may be configured to operate at a first supply voltage and may be configured to generate a pull-up signal in response to an input signal. The second device may be configured to operate at a second supply voltage. The second supply voltage may be lower than the first supply voltage. The second device may be configured to generate an output in response to (i) the input signal and (ii) the pull-up signal.

Abstract: A programmable bus hold circuit which may find application in programmable logic devices, memories and other I/O devices may include a first element for receiving a voltage from an I/O pad and programmable circuitry coupled to the first element for controlling whether the voltage at the pad is to be held its current logic level. The first element may be a logic gate (such as a NOR gate) the programmable circuit may include a tristatable buffer (e.g., under the control of a memory cell or other programmable bit capable of enabling or disabling the programmable bus hold circuit) or a switch (e.g., a transistor).

Abstract: A circuit including an oscillator circuit, a current generator circuit and a voltage generator circuit. The oscillator circuit may be configured to generate an output signal having a frequency in response to (i) a first control signal and (ii) a second control signal. The current generator may be configured to generate said first control signal in response to a first adjustment signal. The voltage generator circuit may be configured to generate the second control signal in response to a second adjustment signal.

Abstract: A circuit and method implement a configurable clock generator comprising a logic circuit, a configurable matrix and a phase-locked loop. The logic circuit may be configured to generate a plurality of control signals. The configurable matrix may comprise a plurality of interconnections that may be configured to (i) receive the plurality of control signals from the logic circuit and (ii) bus the control signals to the phase-locked loop. The plurality of control signals may control the operation of the phase-locked loop. In one example, the logic circuit may comprise a sea of gates logic array.

Abstract: A method of forming metallic layers on a substrate includes the steps of forming a first layer including a first metal on the substrate; cooling the first layer for a period of time sufficient to suppress formation of an intermetallic phase; and forming a second layer including a second metal distinct from the first metal on the first layer. The cooling step decreases the roughness of the resultant stacked structure by suppressing the formation of an intermetallic phase layer between the two metallic layers and by suppressing “bumps” or other surface irregularities that may form at relatively reactive grain boundaries in the first layer.

Abstract: A programmable logic device includes a node and a RAM cell configured to power-up in a preferred state so as to provide a predetermined logic signal to the node upon power-up. The node may comprise an interconnection element, for example a transistor. Associated with the interconnection element may be two signal lines within the programmable logic device, for example, as part of a programmable interconnect matrix. The interconnection element and the two signal lines are associated such that when the interconnection element is in a first state the two signal lines are electrically coupled and when the interconnection element is in a second state the two signal lines are not electrically coupled. The predetermined logic signal from the RAM cell selects one of the first and second states. The RAM cell may include two PMOS transistors, each having an associated threshold voltage, wherein the threshold voltage of one of the PMOS transistors is lower than the threshold voltage of the other PMOS transistor.

Abstract: A method of reading the contents of a dual port memory cell which has a Beta Ratio less than 1.5 is described. A wordline is associated with a selected port of the memory cell. The wordline is coupled to a gate device of the memory cell for controlling communication between the memory cell and a bitline. The gate device has a first conductance at a first wordline voltage and a second conductance at a second wordline voltage. The second conductance is less than the first conductance. A port of the cell is selected by applying a select voltage to the associated wordline. The select voltage is approximately the same as the second wordline voltage. The cell contents are then retrieved from the bitline.

Abstract: A circuit comprising a first and a second sense transistor, a bitline and a complementary bitline, one or more first switches and one or more second switches. The first switches may be configured to couple the first sense transistor to the bitline and the second sense transistor to the complementary bitline. The second switches may be configured to couple the first sense transistor to the complementary bitline and the second sense transistor to the bitline. The first and second switches may be configured to provide voltage threshold matching between the first and second transistors.

Abstract: A power-on-reset circuit that may be configured to present a power-on-reset signal in response to a voltage. The power-on-reset circuit may comprise a voltage detector, a first analog delay circuit and a feedback loop. The first analog delay circuit may be coupled to an output of the voltage detector. The feedback loop may be coupled an output of the power-on-reset circuit to an input of the power-on-reset circuit.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a first current in response to a reference voltage. The first current may vary as a function of temperature. The second circuit may be configured to generate a second current to counteract for the variations of the first current. The second current may vary as a function of temperature. The third circuit may be configured to generate a third current in response to the first current and the second current.

Abstract: An integrated circuit, a programming mechanism and a method is provided for programming test information upon non-volatile storage devices of the integrated circuit. The test information includes a pass/fail outcome arising from one or more test operations to which the integrated circuit is exposed. In addition to or in lieu of the test outcomes, test results of one or more parametric tests at select test operations can be measured from and programmed back into the integrated circuit. Test limits against which the test results can be compared may also be programmed into the integrated circuit. The test outcomes of various test operations, test results of various test parameters and test limits of the same or dissimilar test parameters are stored in separate non-volatile storage locations attributed to the integrated circuit.

Abstract: An apparatus comprising an oscillator circuit and a logic circuit. The oscillator circuit may be configured to present an output signal having a frequency in response to (i) a reference signal, (ii) a control signal and (iii) the output signal. The logic circuit may be configured to present the control signal in response to (i) the output signal and (ii) the reference signal. In one example, the logic circuit may disable the oscillator when the output signal oscillates outside a predetermined range.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal that ramps between a first and second frequency in response to (i) a first control signal, (ii) a second control signal, and (iii) a first reference signal. The second circuit may be configured to generate the first and second control signals in response to a third control signal having a third frequency. The third frequency may reduce electromagnetic interference generated by the first circuit.

Abstract: According to one embodiment, a nonvolatile storage circuit (100) can include a volatile portion (102) that includes p-channel metal-oxide-semiconductor (MOS) transistors (106-0 and 106-1) and n-channel MOS (NMOS) transistors (108-0 and 108-1) arranged in a complementary MOS (CMOS) latch configuration. Also included are nonvolatile devices (116-0 and 116-1) disposed between PMOS transistor 106-0 and NMOS transistor 108-0, and between PMOS transistor 106-1 and NMOS transistor 108-1. Nonvolatile devices (116-0 and 116-1) can include silicon-oxide-nitride-semiconductor (SONOS) transistors that can be programmed to opposite states to recall a logic value when power is applied to the nonvolatile storage circuit (100). In a read mode, a bias voltage VBIAS can be applied to nonvolatile devices (116-0 and 116-1) that tends to retain charge in both nonvolatile devices (116-0 and 116-1).

Abstract: A circuit comprising an input circuit and an adjustable delay. The input circuit may be configured to generate a differential signal in response to a single ended signal. The adjustable delay may be configured (i) delay or not change a rising edge or (ii) delay or not change a falling edge of a first portion of the differential signal. A second adjustable delay may be configured (i) delay or not change a rising edge or (ii) delay or not change a falling edge of a second portion of the differential signal. The differential signal may be presented to an output buffer in a Universal Serial Bus device. The present invention may also include a squaring circuit that may be configured to improve the differential alignment between the first and second portions of the differential signal.

Abstract: A semiconductor wafer is disclosed including a set of alignment marks and buffer structure. The buffer structure may collect or trap fabrication and/or processing materials and/or contaminants that may arise in the further fabrication steps and that may adversely affect the alignment marks. The buffer structure thus helps to preserve the alignment marks such that, e.g., lithographic masks used in fabricating the semiconductor wafer may be accurately aligned during further processing.

Abstract: A circuit comprising a positive switch and a steering network. The positive switch may be configured to present a first and a second switch signal in response to a first select signal. The steering network may be configured to present a high voltage output that may transition between a very high positive and a very low negative voltage, where the transition may respond to a high positive voltage input, a low negative voltage input, a first and second switch signal, and a second select signal.

Abstract: An architecture comprising a detector, a first pump circuit, a second pump circuit and a comparator. The detector may present a first active operating signal in response to one or more reference signals. In one example, the first active operating signal may be generated in response to a feedback signal having a parameter within a predetermined range. The first pump circuit may be configured to provide a replica pump signal in response to a current adjustment signal and either (i) at least one of the one or more reference signals or (ii) the first active operating signal. The second pump circuit may be configured to provide a voltage control signal in response to the current adjustment signal and either (i) the first active operating signal or (ii) a second, independent active operating signal. The comparator may be configured to provide the current adjustment signal in response to the replica pump signal and the voltage control signal.

Abstract: The present invention advantageously provides a method for using an abrasive surface and a particle-free liquid to polish a dielectric, wherein the dielectric is deposited within an isolation trench and across a polish stop surface such that a recess region of the dielectric is spaced below the polish stop surface. In an embodiment, the dielectric is an isolation oxide, and the polish stop surface belongs to an upper surface of a nitride layer formed above a silicon-based substrate. The surface of the dielectric is positioned laterally adjacent the abrasive polishing surface such that the particle-free liquid is positioned at the interface between the dielectric and the polishing surface. The particle-free liquid is preferably deionized water, and the abrasive polishing surface is preferably a polymeric matrix entrained with particles composed of, e.g., ceria.