Abstract: A digital phase detector and charge pump circuit system reset circuit and method resets a digital phase detector according to the charge outputs between the charge pump circuits and a following loop filter. The sensing circuitry emulates portions of the circuitry of the digital phase detector and charge pump circuit system and minimizes deadband time. Current mirror portions of the charge pump circuit alternate between p-channel and n-channel devices to regularize output voltage levels produced by the charge pump circuit system.

Abstract: A circuit and method for preventing an oscillator from oscillating above a first predetermined frequency or below a second predetermined frequency. The present invention may comprise (a) a clock generation circuit configured to generate an output clock signal in response to (i) a reference clock, (ii) one or more control signals and (ii) a reset signal and (b) a control circuit configured to generate said reset signal in response to said one or more control signals.

Abstract: The invention concerns a method of forming a layer of metal on a substrate and fill the via with high throughput. A layer of metal can be formed on a substrate using sequentially a cold deposition step, a slow hot deposition step and a rapid hot deposition step. The cold deposition step need only be performed for a time sufficient to deposit a seed layer of metal over the entire surface on which the metal layer is to be formed. In the slow hot deposition step, further metal is deposited at a low power allowing for surface diffusion of the deposited metal, which is then followed by a rapid hot deposition of metal under bulk diffusion conditions.

Abstract: A non-volatile memory IGFET device has a gate dielectric stack that is dielectrically equivalent to a layer of silicon dioxide having a thickness of 170 .ANG. or less. Above the dielectric stack is a polycrystalline silicon gate that is doped in an opposite manner to that of the source and drain regions of the transistor. By using a gate doping that is opposite to that of the IGFET source and drain regions, the poly depletion layer that can occur during programming in modern and advanced memory devices is eliminated according to this invention. The device of this invention forms an accumulation layer in the poly rather than a depletion layer. This difference not only greatly improves the program speed, but allows for selecting the gate doping at levels as low as 10.sup.11 /cm.sup.3, or less, without significantly compromising the program speed.

Abstract: Routing an input signal to an output of a programmable interconnect matrix is accomplished via multi-level routing architecture. The routing may include selecting the input signal from a number of input signals at a first level of the routing architecture to provide an intermediate signal. The intermediate signal may then be selected at a second level of the routing architecture to provide the output signal. Selecting the input signal and/or the intermediate signal may be accomplished by programming one or more mutliplexers. In a further embodiment, the method includes dividing a plurality of input signals into segments, each segment including a number of the plurality input signals. From the segments, at least one of the input signals may be selected to produce the intermediate signal.

Abstract: A non-volatile semiconductor reference voltage source has a memory unit capable of storing information about a history of an associated circuit. The memory unit is located in proximity to the memory unit and contains at least some similar elements as the memory unit. The history may include information about at least some of the following: states of stored information, construction variations of the elements of the associated circuit, environmental considerations, deterioration and fatigue of the elements, and decay of information in the associated circuit. The memory unit is connected to modify an output of the reference voltage source in accordance with the stored information. A method is also presented for generating a reference voltage within an integrated memory circuit. The method includes providing a column of said memory units, each memory unit having a unique row line set associated with it.

Abstract: A first detection circuit, a second detection circuit and a counter circuit. The first detection circuit may be configured to present a first control signal in response to (i) an input signal having a period, (ii) an output signal and (iii) an enable signal. The second detection circuit may be configured to present a second control signal in response to (i) the input signal, (ii) the output signal and (iii) the enable signal. The counter circuit may be configured to present a delay signal in response to (i) the first control signal, (ii) the second control signal and (iii) the output signal. The delay signal may be a fraction of the period of the input signal.

Abstract: A circuit and method comprising a memory array and a plurality of address circuits. The memory may comprise a plurality of storage elements each configured to read and write data in response to an internal address signal. The plurality of address circuits may each be configured to generate one of said internal address signals in response to (i) an external address signal, (ii) a clock signal and (iii) a control signal.

Abstract: A method and apparatus comprising (i) a first circuit that may be configured to generate a first and second pulse in response to a reset signal, (ii) a latch circuit that may be configured to generate a first and second latch output in response to (a) the first and second pulses, (b) the reset signal and (c) an input signal and (iii) a third circuit that may be configured to generate a detect output in response to the first and second latch outputs. The detect output may be implemented as a trigger signal having an enabled state indicating a floating voltage is present on the input signal. The first and second latch outputs may be used to indicate the drive strength of the input signal. The enabled state of the detect output may have a floating state other than a standard logic "1" or logic "0".

Abstract: A voltage source is configured to produce a desired voltage and the desired voltage is applied to a programmable cell coupled to the voltage source. Configuration may be accomplished by loading a register with a programmed voltage value which may be received as a serial data stream through a test access port coupled to the register. For one embodiment, the voltage source may be coupled to a gate of the programmable cell, thus allowing testing of margin voltages of the programmable cell. In a further embodiment, the voltage source may be coupled to a drain of the programmable cell through a load line circuit, thus providing a programmed voltage for the programmable cell. In general then, the programmable voltage source is configurable to provide a voltage to the programmable cell in accordance with a programmed voltage value loaded into the programmable voltage source.

Abstract: An integrated circuit and computer system. According to one embodiment of the present invention an integrated circuit on a single substrate for use with a microprocessor which is coupled to a processor bus is provided, and the integrated circuit includes a cache random access memory array and a data path logic control unit, such as multiplexer which is coupled to the cache random access memory array and has an output for coupling to the processor bus. In one embodiment, a further multiplexer having an output for coupling to a first portion of a memory is provided, and this multiplexer further has input for coupling to a second portion of the memory bus. The IC according the present invention is also for use with a second IC which includes control logic for controlling system memory and for controlling the processor bus and memory bus as well as interfacing to other buses such as peripheral bus.

Abstract: A method of forming non-volatile memory (e.g., an EEPROM device) and a CMOS device (e.g., a RAM), on a single die or chip, and a structure formed by the method. In one embodiment, the control gate of the storage transistor as well as the isolation gate of the isolation transistor may be formed during the same manufacturing process step, and thus may be formed of the same gate poly material and may have similar thickness.

Abstract: A circuit comprising a comparator circuit and a control circuit. The comparator circuit may be configured to present an output signal in response to (i) a reference current and (ii) a control current. The control circuit may be configured to generate the control current in response to (i) a first current source configured to present a fixed portion of the control current, (ii) a second current source configured to present a variable portion of the control current and (iii) a sense transistor. The second current source generally responds to a level of said control current.

Abstract: Methods for monitoring defects in a process for forming a contact hole, via or trench in a layer of a device in an integrated circuit includes the steps of forming a sacrificial topology on a substrate by duplicating at least a portion of a structure of the device while substituting a material substantially free of elemental silicon for any elemental silicon present in the device to be monitored, etching the sacrificial topology at least to the substrate, removing at least a portion of the sacrificial topology, and inspecting the substrate using a wafer surface inspection tool. The substituted material, such as a dielectric material, can be easily etched and removed from the substrate, as compared to polysilicon. The etching step preferably creates an indentation in the substrate that is readily detectable by the wafer surface inspection tool. The etching step is preferably a selective etching step, having a selectivity of at least 10:1.

Abstract: In a memory device having a power-down mode, an address transition detection (ATD) signal within the memory device is inhibited at a power-up transition, provided that a power-down transition which proceeded the power-up transition ensured bit line equalization. The wordlines of the memory device may be disabled during the power-down mode and subsequently enabled (e.g., after an address-matched delay, to ensure a valid address is available for the first access following power-down) in response to the power-up transition. The ATD signal may be inhibited by generating a pulse having an appropriate starting time, and of sufficient duration to decouple an ATD pulse generator from dynamic bit line equalization control circuitry within the memory device. Such a pulse may be generated by combining a pair of signals produced in response to the power-up transition, at least one of the signals being delayed in time with respect to the other.

Abstract: A CAM including a set of priority registers for storing information from one port and a set of non-priority registers for storing information from a second port. The CAM also includes a memory array that is coupled to both sets of registers. A port arbiter within the CAM determines which set of registers is given access to the memory array. Also described is a method for controlling access to the memory array. A lock interval is indicated before the priority registers initiate access to the memory array. During the lock interval, access to the memory by the non-priority registers is delayed if the access cannot be completed before the priority registers begin access.

Abstract: A circuit and method comprising a memory, a first latch, a second latch and a control circuit. The memory may be configured to write information in response to (i) an input data signal and (ii) an address signal. The first latch may be configured to hold the address in response to a control signal. The second latch may be configured to hold the data input signal in response to the control signal. The control circuit may be configured to present the control signal in response to (i) an enable signal and (ii) a detect signal.

Abstract: A bistable non-volatile latch circuit adapted to store a non-volatile binary data state during a program operation, and to assume one of two stable states in response to a recall operation that correspond uniquely to the data state has first and second circuit sections. The first circuit section has a first non-volatile current path with means to set the impedance of the first current path in a non-volatile manner. A first end of the first current path is connected to provide a logic output signal, which represents a binary logic state depending on a voltage applied to the a first signal input node. The set/reset signal to the first current path varies between at least the power source voltage and a program voltage that is negative with respect to the power source voltage. A second circuit section generates an output voltage on a second output node that represents a binary logic state opposite from the output states of the first circuit section.

Abstract: A bi-directional control circuit for preventing the improper functioning of a pass transistor MN1 in a CMOS circuit due to abnormally high voltages on its source and drain nodes IO1 and IO2. If the voltage on one of the nodes, IO1 or IO2, rises with a fast input edge rate, tending to cause the gate voltage V1 to go too high due to capacitive coupling (source-gate or drain-gate), node N1 is coupled through an appropriate capacitor, C1 or C2, to another node N3, which is normally held low by a transistor MN9. The voltage on N3 drives the gate of a transistor MN10, connected to node N1, to pull the gate voltage V1 of MN1 low, tending to discharge the capacitive coupling due to the overlap capacitance of MN1, which tends to turn MN1 OFF and also allows the voltage V1 to decay very quickly, so as to prevent some of the charge from IO1 getting through to IO2.

Abstract: The present invention concerns a mask-programmed cell comprising an input, an output and a transistor. The transistor has a first terminal and a second terminal. The cell may be configured in a first of three possible states when (a) the cell input is coupled to the first terminal via a first of two mask-programmed interconnects, and (b) the second terminal is coupled to the output. The cell may be configured in a second of three possible states when (a) a complement of the cell input is coupled to the first terminal via a second of the two mask-programmed interconnects, and (b) the second terminal is coupled to the output. The cell may be configured in a third of the three possible states when either the second terminal or the output is coupled to a predetermined level signal.