Abstract: A method of forming a transistor is described. In one embodiment the method includes: forming a channel of a transistor in a surface of a substrate; forming a dielectric stack including a first oxide layer overlying the surface of the substrate, a middle layer comprising nitride overlying the first oxide layer and a second oxide layer overlying the middle layer; forming over the dielectric stack a mask exposing source and drain (S/D) regions of the transistor; etching the dielectric stack through the mask to thin the dielectric stack by removing the second oxide layer and at least a first portion of the middle layer in S/D regions of the transistor; and implanting dopants into S/D regions of the transistor through the thinned dielectric stack to form a lightly-doped drain (LDD) adjacent to the channel of the transistor. Other embodiments are also described.

Abstract: An example method includes disposing a semiconductor element on a first surface of a substrate. The substrate includes multiple solder balls mounted on a second surface of the substrate that is opposite to the first surface. The semiconductor element includes a bottom surface adjacent to the first surface of the substrate, a top surface, and multiple side surfaces. The example method includes forming a first molding portion to entirely enclose the multiple side surfaces and the top surface of the semiconductor element. The example method includes removing a second molding portion from the first molding portion to expose all of the top surface of the semiconductor element, leaving a third molding portion entirely enclosing the multiple sides surfaces of the semiconductor element, and coupling the semiconductor element to the first surface of the substrate by forming electrical connection between the semiconductor element and a first of the multiple solder balls.

Abstract: Techniques for suppression of program disturb in memory devices are described herein. In an example embodiment, a memory device comprises a flash memory array coupled to a control circuit. The flash memory array comprises rows and columns of memory cells, where the memory cells in each row are coupled to a source line and to a select-gate (SG) line, and the memory cells in each column are coupled to a respective bit line (BL). The control circuit is configured to regulate both a first voltage, of a selected SG line, and a second voltage, of an unselected BL, independently of a power supply voltage of the flash memory array, and to adjust at least one of the first voltage and the second voltage based on a measure of an operating temperature of the memory device.

Abstract: A programmable system includes a programmable analog system that is reconfigurable to perform various analog operations, and includes a programmable digital system that is reconfigurable to perform various digital operations. The programmable system also includes a microcontroller capable of reconfiguring and controlling the programmable analog system and the programmable digital system. The programmable digital system is configured to control the programmable analog system autonomously of the microcontroller.

Abstract: A method for detecting a finger at a fingerprint sensor includes detecting a presence of an object at a fingerprint sensor and, in response to detecting the presence of the object, acquiring image data for the object based on signals from the fingerprint sensor. The method further includes, for each subset of one or more subsets of the image data, calculating a magnitude value for a spatial frequency of the subset, and identifying the object as a finger based on comparing the magnitude value to a threshold.

Abstract: Memory cells including embedded SONOS based non-volatile memory (NVM) and MOS transistors are described. The memory cell includes a substrate having a non-volatile memory (NVM) region and a plurality of metal-oxide-semiconductor (MOS) regions. A NVM transistor in the NVM region includes a tunnel dielectric on the substrate, a charge-trapping layer on the tunnel dielectric, and a blocking dielectric comprising a high-k dielectric material over the charge-trapping layer. The plurality of MOS regions include a number of MOS transistors. At least one of the MOS transistors includes a gate dielectric comprising a high-k dielectric material over a surface of the substrate. Generally, the blocking dielectric and the gate dielectric comprise the same high-k dielectric material. Other embodiments are also described.

Abstract: A phase controller includes a plurality of pulse width modulation (PWM) circuits, a plurality of switching devices, a computing unit, and a latency generator. The plurality of PWM circuits output pulse signals. The plurality of switching devices are coupled to the respective plurality of PWM circuits, and switch on and off based on the pulse signals. The computing unit calculates the pulse signals to be output from the plurality of PWM circuits, based on outputs of the plurality of switching devices. The latency generator generates latency in any of the pulse signals so that edge positions of the pulse signals output from the plurality of PWM circuits do not collide with each other, wherein the pulse signals change values at the edge positions.

Abstract: A protecting circuit includes: a discharge switch configured to connect to a first terminal and a second terminal; a trigger circuit comprising load devices configured to be connected in series between the first terminal and the second terminal, each of the load devices being configured to consume power; and a shunt circuit comprising, between the trigger circuit and the first terminal or the second terminal, at least one shunt pathway configured to be capable of bypassing at least one of the load devices. The trigger circuit is configured to turn on the discharge switch when a voltage between the first terminal and the second terminal is higher than a first voltage value, and the shunt circuit is configured to electrically connect the shunt pathway when the voltage is higher than a second voltage value that is greater than the first voltage value.

Abstract: A host device can download a firmware update to a peripheral device having previously enumerated with the host device. The host device can perform link training with the peripheral device in response to a re-enumeration indication received from the peripheral device. The link training can include switching a Link Training and Status State Machine (LTSSM) in the host device from an active state (U0) to an RX.Detect state and synchronizing with the peripheral device in the RX.Detect state. The host device can re-enumerate with the peripheral device utilizing the firmware update after the host device completes link training with the peripheral device.

Abstract: An example system drives one or more transmit signals on first electrodes disposed in a first layer and propagating electrodes disposed in a second layer. The system measures a capacitance of sensors through a of second electrodes. Each second electrode crosses each first electrode to provide a plurality of discrete sensor areas, each discrete sensor area associated with a difference crossing and including a portion of at least one propagating electrode. Each second electrode is galvanically isolated from the first electrodes and the propagating electrodes.

Abstract: Techniques are described herein for detecting one of multiple (e.g., at least three) charger types that may be connected to a portable device. In response to detecting a charging device (e.g., a charger) of a particular charger type, the portable device is configured to charge its battery by drawing the maximum voltage and/or current that is/are allowed by the particular charger type. In an example embodiment, a portable device detects a Universal Serial Bus (USB) connection to a charging device and determines whether the charging device conforms to a first, second, or third charger type based on voltages on data lines of the USB connection. The portable device then charges its battery at maximum charging power available from the charging device according to the third charger type.

Abstract: Methods, physical computer-readable media, and devices are provided that allow re-enumeration to be initiated on a USB 3.0-compatible device. The method includes establishing a connection with a host, transmitting an indicator from the device to the host to cause a Link Training and Status State Machine (LTSSM) of the host to move from active state (U0) to one of SS.Inactive and RX.Detect, synchronizing the device with the host, and presenting a new configuration of the device to the host.

Abstract: A fingerprint sensing circuit, system, and method is disclosed. The fingerprint sensor maybe include a plurality of inputs coupled to a plurality of fingerprint sensing electrodes and to an analog front end. The analog front end may be configured to generate at least one digital value in response to a capacitance of at least one of the plurality of fingerprint sensing electrodes. Additionally, the analog front end may include a quadrature demodulation circuit to generate at least one demodulated value for processing by a channel engine. The channel engine may generate a capacitance result value that is based, in part, on the demodulated value and is stored in a memory.

Abstract: One embodiment includes and I/O bus including a signal line coupled to a signal source and multiple line switches, each line switch to couple a corresponding I/O port to the signal line. Switch logic coupled to the I/O bus may programmatically switch the multiple line switches to couple at least one of the signal source and measurement circuitry to the respective I/O port.

Abstract: A method of forming a transistor is described. In one embodiment the method includes: forming a channel of a transistor in a surface of a substrate; forming a dielectric stack including a first oxide layer overlying the surface of the substrate, a middle layer comprising nitride overlying the first oxide layer and a second oxide layer overlying the middle layer; forming over the dielectric stack a mask exposing source and drain (S/D) regions of the transistor; etching the dielectric stack through the mask to thin the dielectric stack by removing the second oxide layer and at least a first portion of the middle layer in S/D regions of the transistor; and implanting dopants into S/D regions of the transistor through the thinned dielectric stack to form a lightly-doped drain (LDD) adjacent to the channel of the transistor. Other embodiments are also described.

Abstract: A circuit includes a biasing circuit that includes a diode stack coupled to a first node. The biasing circuit can output a biasing signal on the first node. The biasing circuit also includes a transistor, a timer component and a current source. An input of the timer component is coupled to receive an isolation signal. The current source is configured to inject current for a period of time into the diode stack in response to a transition of the ISO signal between a first voltage and a second voltage. The biasing circuit also is configured to output a signal to a level shifter to hold an output of the level shifter in a known state for a specified amount of time after power-up of the circuit for proper operation of the level shifter.

Abstract: A method to fabricate a non-planar memory device including forming a multi-layer silicon nitride structure substantially perpendicular to a top surface of the substrate. There may be multiple non-stoichiometric silicon nitride layers, each including a different or same silicon richness value from one another.

Abstract: Apparatuses and methods of distinguishing between a finger and stylus proximate to a touch surface are described. One apparatus includes a first circuit to obtain capacitance measurements of sense elements when a conductive object is proximate to a touch surface. The apparatus also includes a second circuit coupled to the first circuit. The second circuit is operable to detect whether the conductive object activates the first sense element, second sense element, or both, in view of the capacitance measurements. To distinguish between a stylus and a finger as the conductive object, the second circuit determines the conductive object as being the stylus when the second sense element is activated and the first sense element is not activated and determines the conductive object as being the finger when the first sense element and the second sense element are activated.

Abstract: A method is provided for designing and implementing a circuit comprising an integrated circuit (IC) including a number of analog and digital circuit elements for which operating parameters can be set. In one embodiment the method includes entering in a circuit design tool embodied in a computer readable medium on a server specified requirements for a circuit, the specified requirements including physical properties to be sensed by the circuit. The circuit is automatically modeled by the circuit design tool based on the specified requirements and resources available on the IC, the modeling including translating the specified requirements into parameter settings of the number of the analog and digital circuit elements. The circuit is then built, the building including setting parameters of at least one of the analog and digital circuit elements of the IC using the circuit design tool based on the modeling of the circuit.

Abstract: A parameterizable integrated circuit (IC) and method for designing, refining and implementing a circuit including the parameterizable IC are described. The method begins with receiving information on candidate sensing sub-circuits, parameterizable ICs and user specified requirements for the circuit including physical properties to be sensed and target values for the circuit. Each of the parameterizable ICs include a number of parametric analog and digital circuit elements, and a scheduler to schedule resources of the IC according to measurement priorities, measurement rates and the available circuit elements. Next, each of the candidate sensor-sub-circuits is evaluated with reference to the specified requirements, and each of the candidate ICs evaluated with reference to the requirements and the sensor-sub-circuits. Generally, the method further includes communicating to a user a number of candidate circuit-designs within a predetermined percentage of the one or more target values for the circuit.