Abstract: A design system is provided. In one embodiment the design system includes an input module to receive specification data for a designed circuit including a configurable integrated circuit (IC). The configurable IC includes a number of analog elements for which parameters can be set by the design system, and a plurality of configurable signal path elements including an analog-to-digital converter (ADC) that is utilized in a plurality of different signal paths. The design system further includes a design module to generate a design for the designed circuit based on the specification data, and an output module to set parameters of at least one of the analog elements based on the design. Other embodiments are also provided.

Abstract: A programmable device, having an analog component coupled with an analog bus and a digital component coupled with a digital bus together with a set of 10 pads, each of which capable of being coupled to a bus line of one segment of the analog bus as well as to at least one digital bus line, and where the analog bus is capable of being used to connect a pair of the pads to each other.

Abstract: A capacitance-sensing circuit may include a channel input associated with measuring a capacitance of a unit cell of a capacitive sense array. The capacitance-sensing circuit may also include a capacitive hardware baseliner that is coupled to the channel input. The capacitive hardware baseliner includes a programmable baseline resistor, and a buffer with an input coupled to the programmable baseline resistor and an output coupled to the channel input. The capacitive hardware baseliner generates a baseline current based on a time constant of the channel input associated with the measuring of the capacitance of the element of the capacitive sense array using the programmable baseline resistor. The capacitive hardware baseliner provides the baseline current at the channel input to provide a charge for a sense capacitor. A change in the charge of the sense capacitor is provided by the baseline current indicating a presence of a touch object proximate to the element.

Abstract: A method may include generating display driver signals that vary between only two levels and applying the display driver signals to opposing electrodes of a display segment within a display device. An intrinsic capacitance of the display device filters the display driver signals to generate different analog signal levels at the display segment of the display device. The method varies the pulse density of the display driver signals to select or de-select the display segment based on an average voltage magnitude across the display segment over a time period. The display segment is activated when the average voltage magnitude exceeds a threshold value.

Abstract: A semiconductor device including a non-volatile memory (NVM) cell and method of making the same are disclosed. The semiconductor device includes a metal-gate logic transistor formed on a logic region of a substrate, and the NVM cell integrally formed in a first recess in a memory region of the same substrate, wherein the first recess is recessed relative to a first surface of the substrate in the logic region. Generally, the metal-gate logic transistor further including a planarized surface above and substantially parallel to the first surface of the substrate in the logic region, and the NVM cell is arranged below an elevation of the planarized surface of the metal-gate. In some embodiments, logic transistor is a High-k Metal-gate (HKMG) logic transistor with a gate structure including a metal-gate and a high-k gate dielectric. Other embodiments are also disclosed.

Abstract: A method of erasing, during an erase operation, a non-volatile memory (NVM) cell of a memory device is disclosed. The erasing includes applying a first HV signal (VPOS) to a common source line (CSL). The CSL is shared among NVM cells of a sector of NVM cells. The first HV signal is above a highest voltage of a power supply. The erasing also includes applying the first HV signal to a local bit line (BL).

Abstract: Disclosed is a method for responding to a single user read command of a complementary cell array including one or more complementary cell pairs, the method including: determining if a first group of cells out of a data word is in an erased state or in a programmed state, and outputting a data word so that (a) if the first group of cells is determined to be erased a logical “one” is output for each bit of the data word and (b) if the first group of cells is determined to be programmed the result of a complementary read is output for each bit of the data word.

Abstract: A RFID system includes an RFID controller incorporating a serial bus master coupled via a serial bus to a serial bus slave device, whereby the RFID controller controls power supply and/or power mode of the salve device in order that the slave device is powered and able to communicate with the RFID controller in response to RFID commands received from an RFID reader, and unpowered or in a low power mode otherwise.

Abstract: A voltage adjustment circuit for adjusting a voltage to be supplied to scanning lines of a display device includes a slope adjustment circuit configured to adjust a slope of a decrease in the voltage based on data that is externally input, and a clamp voltage adjustment circuit configured to adjust a voltage value at which the voltage is clamped based on the data.

Abstract: A non-volatile memory and methods of operating the same to reduce disturbs is provided. In one embodiment, the method includes coupling a first positive high voltage to a first global wordline in a first row of an array of memory cells, and coupling a second negative high voltage (VNEG) to a first bitline in a first column of the array to apply a bias to a non-volatile memory transistor in a selected memory cell to program the selected memory cell. A margin voltage having a magnitude less than VNEG is coupled to a second global wordline in a second row of the array, and an inhibit voltage coupled to a second bitline in a second column of the array to reduce a bias applied to a non-volatile memory transistor in an unselected memory cell to reduce program disturb of data programmed in the unselected memory cell due to programming.

Abstract: A circuit with a plurality of analog circuit blocks, each configured to provide at least one analog function and a programmable interconnect coupled of the analog circuit blocks and configurable to interconnect combinations of the analog circuit blocks to one another. The circuit is formed in an integrated circuit (chip) and the programmable interconnect comprises a plurality of switches coupled between the analog circuit blocks and ports that provide signal connections for the chip.

Abstract: A memory including current-limiting devices and methods of operating the same to prevent a spread of soft errors along rows in an array of memory cells in the memory are provided. In one embodiment, the method begins with providing a memory comprising an array of a plurality of memory cells arranged in rows and columns, wherein each of the columns is coupled to a supply voltage through one of a plurality of current-limiting devices, Next, each of the plurality of current-limiting devices are configured to limit current through each of the columns so that current through a memory cell in a row of the column due to a soft error rate event does not result in a lateral spread of soft errors to memory cells in the row in an adjacent column. Other embodiments are also provided.

Abstract: A memory is described. Generally, the memory includes a number of non-planar multigate transistors, each including a channel of semiconducting material overlying a surface of a substrate and electrically connecting a source and a drain, a tunnel dielectric layer overlying the channel on at least three sides thereof, and a multi-layer charge-trapping region overlying the tunnel dielectric layer. In one embodiment, the multi-layer charge-trapping region includes a first deuterated layer overlying the tunnel dielectric layer and a first nitride-containing layer overlying the first deuterated layer. Other embodiments are also described.

Abstract: Techniques for multi-phase scanning based on pseudo-random sequences in capacitive fingerprint applications are described herein. In an example embodiment, a method performed by a processing device comprises: receiving measurements that are representative of a portion of a finger on a capacitive fingerprint sensor array, where the measurements are obtained from sensor elements of the capacitive fingerprint sensor array that are scanned in a multi-phase mode based on an excitation vector generated from a pseudo-random sequence; and generating a fingerprint image for the portion of the finger based on the measurements.

Abstract: Techniques for power Field Effect Transistor (power-FET) gate drivers are described herein. In an example embodiment, a USB-enabled system comprises a first and second power paths and an IC controller coupled to control the first and second power paths, where the first and second power paths are external to the IC controller and the IC controller is configured to operate both an N-channel power-FET in the first power path and a P-channel power-FET in the second power path.

Abstract: An example system includes a processing circuit coupled to a memory system and an interface coupled between the processing circuit and a device. The memory system includes a resistive memory array comprising multiple memory structures. Each memory structure comprises a resistive memory cell and is associated with a P-I-N diode. The processing circuit is to access the resistive memory array responsive to a signal received from the device via the interface.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A first portion of a programmable switched capacitor block includes a first plurality of switched capacitors and a second portion of the programmable switched capacitor block includes a second plurality of switched capacitors. A first switch associated with the first plurality of switched capacitors as well as a second switch associated with the second plurality of switched capacitors may be configured based on a type of analog function that is to be provided. The configuring of the first analog and the second analog block may include the configuring of the first switch associated with the first plurality of switched capacitors when the analog function operates on a first single ended signal and the configuring of both the first and second switches when the analog function operates on a differential signal.

Abstract: A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method.

Abstract: A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is self-aligned between the first and second devices and comprises a first filled portion and a second filled portion. The first fined portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices. The self-aligned placement of the buried trench isolation allows for higher packing density without negatively affecting the operation of closely spaced devices in a high density IC.