Abstract: An integrated circuit device may include a first integrated circuit (IC) portion having a memory array that stores data units as storage locations and burst access circuitry that sequentially accesses N relates storage locations within the memory array, where N>1; and a second IC portion comprising a plurality of burst access registers coupled to the burst access circuitry, each burst access register having register locations to store at least N data units, and being coupled to a corresponding port by a single data unit access path.

Abstract: A capacitance sense device can include a plurality of sense electrodes; a nonconductive structure comprising first regions formed over the sense electrodes and second regions formed between first regions that are less compressible than the first regions; a conductive touch surface formed over the nonconductive structure; and a capacitance sense circuit coupled to at least the sense electrodes.

Abstract: An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device—P-I-N diode structures.

Abstract: A nitride read only memory (NROM) array includes a silicon substrate having trenches therein, a plurality of polysilicon bit lines deposited in the trenches and connecting columns of memory cells, a layer of (oxide nitride oxide) ONO at least within the memory cells and a plurality of polysilicon word lines to connect rows of the memory cells. An NROM array with a virtual ground architecture includes a plurality of bit lines to connect columns of NROM memory cells, a layer of ONO at least within the memory cells and a plurality of word lines to connect rows of the NROM memory cells, wherein a distance between word lines is at least twice the width of the word lines.

Abstract: Disclosed is an integrated circuit voltage level shifter including: a first set of pull-up transistors to selectively pull an output voltage towards a high voltage source level based on an input; a second set of pull-down transistors adapted to selectively pull the output voltage towards a lower voltage source level based on the input and a third set of transistors to limit current flow through the second set of pull-down transistors and to mitigate snapback of the second set of pull-down transistors using a bias gate voltage.

Abstract: A protecting circuit includes: a discharge switch configured to connect to a first terminal and a second terminal; a trigger circuit comprising load devices configured to be connected in series between the first terminal and the second terminal, each of the load devices being configured to consume power; and a shunt circuit comprising, between the trigger circuit and the first terminal or the second terminal, at least one shunt pathway configured to be capable of bypassing at least one of the load devices. The trigger circuit is configured to turn on the discharge switch when a voltage between the first terminal and the second terminal is higher than a first voltage value, and the shunt circuit is configured to electrically connect the shunt pathway when the voltage is higher than a second voltage value that is greater than the first voltage value.

Abstract: The present invention provides a system comprising a semiconductor device, a method of controlling the semiconductor device in the system, and a method of manufacturing the semiconductor device in the system. The semiconductor device includes: a semiconductor region located in a semiconductor layer formed on an isolating layer; an ONO film on the semiconductor region; bit lines on either side of the semiconductor region, which are located in the semiconductor layer, and are in contact with the isolating layer; a device isolating region on two different sides of the semiconductor region from the sides on which the bit lines are located, the device isolating region being in contact with the isolating layer; and a first voltage applying unit that is coupled to the semiconductor region. In this semiconductor device, the semiconductor region is surrounded by the bit lines and the device isolating region, and is electrically isolated from other semiconductor regions.

Abstract: An integrated circuit (IC) device can include a plurality of analog blocks, including at least one fixed function analog circuit, a plurality of reconfigurable analog circuit blocks, at least one analog routing block reconfigurable to provide signal paths between any of the analog blocks; and a digital section comprising digital circuits; wherein each analog block includes dedicated of signal lines coupled to the at least one analog routing block.

Abstract: A semiconductor device includes bit lines (12) that are provided in a semiconductor substrate (10) an ONO film (14) that is provided on the semiconductor substrate; word lines that are provided on the ONO film (14) and extend in a width direction of the bit lines (12); and a dummy layer (44) that extends in the width direction of the bit lines (12) and is provided in a bit-line contact region (40) having contact holes formed to connect the bit lines (12) with wiring layers (34). In accordance with the present invention, the proximity effect at the time of word line formation can be restrained, and the variation in the widths of the word lines can be made smaller, or current leakage between the bit lines and the semiconductor substrate can be restrained.

Abstract: An ESD device that includes a gate and an n-drain region isolated from the gate and formed at least partially within an n-well region, which in turn is formed at least partially within a deep n-well region. The doping levels of the n-drain region, the n-well region and the deep n-well region are in a descending order. The ESD device has trigger and holding voltages, above the operation voltage of its protected circuit, which are layout-configurable by altering the distance between the n-drain and a side edge of the n-well region.

Abstract: A process for forming tilted edge wordline implants is disclosed. The process includes forming a first drain implant in a substrate, forming a first tilted implant in a substrate adjacent a first edge wordline to supplement said first drain implant where the first tilted implant is provided at a tilt angle from a first direction and forming a second tilted implant in the substrate adjacent a second edge wordline to supplement another first drain implant where the second tilted implant is provided at a tilt angle from a second direction. A second drain implant is formed in the substrate.

Abstract: Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.

Abstract: A first-in-first-out (FIFO) memory device may include a plurality of memory locations configurable into M input queues comprising sequences of input data values and N output queues for storing sequences of output data values, wherein N is not equal to M.

Abstract: Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate disposed over the first dielectric. The semiconductor device further includes a second dielectric disposed vertically, substantially perpendicular to the substrate, at an edge of the gate, and a spacer disposed proximate to the second dielectric. The spacer includes a cross-section with a perimeter that includes a top curved portion and a vertical portion substantially perpendicular to the substrate. The perimeter further includes a discontinuity at an interface of the top curved portion with the vertical portion. Further, disclosed herein are methods associated with the fabrication of the aforementioned semiconductor device.

Abstract: In the display of an image including a fixed background image and a variation image of the background image, at least one of the amount of data to be held and the amount of work to be processed is reduced. A display control device acquires pixel description data including a combination of position information for specifying a position on a pixel array and address information for specifying an address in an image storage unit of image data which is displayed at the position specified by the position information. Furthermore, the display control device reads out the image data from the address of the image storage unit specified by the address information and specifies the position on the pixel array specified by the image description data to the display to input the read out image data.

Abstract: A method of making a semiconductor structure is provided. The method includes forming a tunneling layer overlying a first channel connecting a source and a drain. A charge storage layer is formed overlying the tunneling layer, the charge storage layer comprises forming a substantially trap free first layer over the tunneling layer, and forming a trap dense second layer over the first layer. Finally, a blocking structure is formed on the charge storage layer by plasma oxidation. A thickness of the charge storage layer is reduced through oxidation of a portion of the charge storage layer during the formation of the blocking structure. Other embodiments are also described.

Abstract: In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is then formed on the layer.

Abstract: An apparatus includes a voltage monitoring device to generate a brownout indication signal in response to a change in a power supply voltage. The apparatus also includes a mode control device to control a temporal response of the voltage monitoring device to the change in the power supply voltage based, at least in part, on a voltage level of the power supply voltage.

Abstract: In one embodiment, a method for supporting multivariable functions of an application includes receiving user input pertaining to two or more variables associated with a multivariable function of the application, and then causing code for the function to be automatically generated to update the variables based on the user input.

Abstract: An integrated circuit (IC) device can include a memory array section comprising a plurality of memory arrays that each include memory cells for storing data values; a data path section having switching circuits configured to enable data paths between the memory arrays and a plurality of input/outputs (I/Os) of the IC device; and a power fill control circuit configured to activate power-fill circuits in the IC device to perform non-mission mode operations that consume current, the amount of non-mission mode operations varying in response to mission mode circuit activity in the IC device; wherein mission mode circuit activity includes circuit activity resulting from a user input to the IC device.