Abstract: A processor includes: an arithmetic unit configured to execute instructions; an instruction decode part configured to decode the instructions executed in the arithmetic unit and to output opcodes; and an interrupt register configured to receive interrupt signals, wherein the instruction decode part includes an instruction code map that stores the opcodes in correspondence to instructions and outputs the opcodes in accordance with the instructions inputted, and the instruction code map stores a plurality of sets of opcodes to be output as switch opcodes corresponding to additional instructions, the additional instructions are a part of the instructions, and switches the sets of the switch opcodes in accordance with the interrupt signal.

Abstract: A method of making a semiconductor structure is provided. The method includes forming a tunneling layer over a channel connecting a source and a drain formed in a surface of a substrate, forming a charge storage layer overlying the tunneling layer, and forming a blocking structure on the charge storage layer by plasma oxidation. A thickness of the charge storage layer is reduced through oxidation of a portion of the charge storage layer during the formation of the blocking structure. Other embodiments are also described.

Abstract: Embodiments of the invention relate to a method and apparatus to reduce power consumption in a passive matrix LCD driver circuit by using a plurality of drive buffers and active power management of sub-blocks in the passive matrix LCD drive circuit. Each drive buffer may operate in a first phase, which may include a high-drive mode to drive an LCD voltage to a threshold voltage level and a low-drive mode to modify the LCD voltage to approximate an input voltage of the drive buffer, and to maintain a constant LCD voltage level. The low-drive buffer consumes less current than the high-drive buffer, thus reducing power consumption. The drive buffer may also operate in a second phase, also a no-drive mode, in which the drive buffer and the bias voltage generator may be completely turned off, to further reduce power consumption. The drive buffer may be used to drive capacitive loads, as well as partially-resistive loads and inductive loads.

Abstract: A capacitive sensor includes a switching capacitor circuit, a comparator, and a charge dissipation circuit. The switching capacitor circuit reciprocally couples a sensing capacitor in series with a modulation capacitor during a first switching phase and discharges the sensing capacitor during a second switching phase. The comparator is coupled to compare a voltage potential on the modulation capacitor to a reference and to generate a modulation signal in response. The charge dissipation circuit is coupled to the modulation capacitor to selectively discharge the modulation capacitor in response to the modulation signal.

Abstract: Techniques for low-power implementation of a Universal Serial Bus (USB) Type-C connector subsystem are described herein. In an example embodiment, an integrated circuit (IC) chip device comprises a Universal Serial Bus (USB) Type-C subsystem. The Type-C subsystem is configured to operate an Ra termination circuit that consumes no more than 100 ?A of current after the Ra termination circuit is applied to a Vconn line of the Type-C subsystem, and/or to operate one or more standby reference circuits in a deep-sleep state of the device to perform detection on a Configuration Channel (CC) line of the Type-C subsystem, where the device consumes no more than 100 ?A of current in the deep-sleep state.

Abstract: The present invention provides a semiconductor device including: a semiconductor chip; a lead frame provided with a recessed portion on at least one of an upper surface or a lower surface thereof, and electrically coupled to the semiconductor chip; and a resin section that molds the semiconductor chip and the lead frame, and is provided with an opening above the recessed portion. By inserting a conductive pin (not shown) into the recessed portion through the opening, a plurality of semiconductor devices can be mechanically and electrically coupled to each other.

Abstract: The present invention provides a method of fabricating a semiconductor device including forming stop layers (32) that include silicon oxy-nitride films above a semiconductor substrate, forming a cover film (34) between and on the stop layers, in which a top surface of the cover film above a region between the stop layers is higher than top surfaces of the stop layers, and polishing the cover film to the stop layers by using ceria slurry, and also provides a semiconductor device including metal layers (30) provided above a semiconductor substrate, silicon oxy-nitride films (32) provided on the metal layers, and an embedded layer (36) provided between the metal layers to have a top surface substantially coplanar with top surfaces of the silicon oxy-nitride films. According to the present invention, it is possible to provide a semiconductor device having a film of excellent planarization on a surface thereof and fabrication method therefor.

Abstract: Disclosed herein are control apparatus, switching power supply, and control method embodiments for maintaining power conversion efficiency. An embodiment operates by determining whether or not a current of an inductor of the switching power supply has become less than or equal to a predetermined value, controlling a reference voltage based on at least one of a result of the determining or a result of comparing a voltage according to an output voltage of the switching power supply and the reference voltage, and pausing switching of the switching power supply based on the reference voltage.

Abstract: A memory apparatus may include one or more cache memory integrated circuit (ICs), each of which may have compare circuitry that compares a received address with stored compare values, a cache memory that provides cached data in response to the compare circuitry, a controller interface having at least address and control signal input terminals, and a module output connection having at least address and control signal output terminals corresponding to the address and control signal input terminals.

Abstract: A manufacturing method of a semiconductor device includes arranging a melted resin on a substrate, arranging a semiconductor chip on the melted resin, pressing the semiconductor chip and flip-chip mounting the semiconductor chip on the substrate, and hardening the melted resin with the melted resin being subjected to a fluid pressure and forming a resin portion.

Abstract: There is provided an inter-bus communication interface device capable of efficiently performing transfer of data between a plurality of devices connected to different buses, respectively. When communication data is transmitted, a first device writes the communication data into a buffer, whereas when communication control information is transmitted, the first device writes the communication control information into a register. A control circuit passes the communication data stored in the buffer to a second device, and passes the communication control information stored in the register to a second device.

Abstract: Apparatuses and methods of pulse shaping a pulse signal for programming and erasing a Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory cell are described. In one method a pulse shape of a pulse signal is controlled to include four or more phases for programming or erasing a SONOS memory cell. A write cycle is performed to program or erase the SONOS memory with the pulse signal with the four or more phases.

Abstract: An example system includes a remote control and a host device. The remote control is configured to communication through a first communication interface and a second communication interface. The host device is configured to retrieve command information from a remote computer through a third communication interface, and responsive to one or more requests from the remote control, to transfer the command information to the remote control through the first communication interface, the remote control configured to control a plurality of remote devices through the second communication interface, using the command information.

Abstract: A non-volatile memory device comprising a memory cell array including memory cells distributed among a plurality of sectors; a controller operable to program, read, and erase memory cells in said memory array, said controller further operable to generate and store EPLI values for programming a number of EPLI bits in one of said plurality of sectors with said stored EPLI values; and a comparator to compare said stored EPLI values with EPLI values programmed in said EPLI bits.

Abstract: An electronic device includes a substrate with a semiconducting surface having a plurality of fin-type projections coextending in a first direction through a memory cell region and select gate regions. The electronic device further includes a dielectric isolation material disposed in spaces between the projections. In the electronic device, the dielectric isolation material in the memory cell regions have a height less than a height of the projections in the memory cell regions, and the dielectric isolation material in the select gate regions have a height greater than or equal to than a height of the projections in the select gate regions. The electronic device further includes gate features disposed on the substrate within the memory cell region and the select gate regions over the projections and the dielectric isolation material, where the gate features coextend in a second direction transverse to the first direction.

Abstract: An analog circuit cell array includes a plurality of transistor cell arranged in an array. Each of the transistor cells includes a first source region, a first channel region, a common drain region, a second channel region, and a second source region arranged in sequence one adjacent to another; and a first gate electrode and a second gate electrode formed on the first channel region and the second channel region, respectively, and wherein the first gate electrode and the second gate electrode are connected together for use, and the first source region and the second source region are connected together for use.

Abstract: A method, system and tangible computer readable medium for generating one or more wake-up words are provided. For example, the method can include receiving a text representation of the one or more wake-up words. A strength of the text representation of the one or more wake-up words can be determined based on one or more static measures. The method can also include receiving an audio representation of the one or more wake-up words. A strength of the audio representation of the one or more wake-up words can be determined based on one or more dynamic measures. Feedback on the one or more wake-up words is provided (e.g., to an end user) based on the strengths of the text and audio representations.

Abstract: Semiconductor devices and methods of manufacturing such devices are described herein. According to embodiments, a semiconductor device includes a memory gate disposed in a first region of the semiconductor device. The memory gate may include a first gate conductor layer disposed over a charge trapping dielectric. A select gate may be disposed in the first region of the semiconductor device adjacent to a sidewall of the memory gate. A sidewall dielectric may be disposed between the sidewall of the memory gate and the select gate. Additionally, the device may include a logic gate disposed in a second region of the semiconductor device that comprises the first gate conductor layer.

Abstract: Systems and methods of visualizing capacitance sensing system operation. A graphical user interface for visualizing capacitance sensing system operation includes a first window. The window includes a representation of a physical layout of a plurality of sensor devices on a target apparatus. The graphical user interface is operable to accept input from a pointing device to select a selected sensor from the plurality of sensor devices. A second window is for displaying capacitive sensing data of the selected sensor.

Abstract: Semiconductor devices and the manufacture of such semiconductor devices are described. According to various aspects of the disclosure, a semiconductor device can include a memory region, a first logic region, and a second logic region. A select gate can be formed in the memory region of the device and a first logic gate formed in the logic region. A charge trapping dielectric can then be disposed and removed from a second logic region. A gate conductor layer can then be disposed on the device and etched to define a memory gate on the sidewall of the select gate and a second logic gate in the second logic region.