Abstract: A semiconductor device includes: a plurality of memory cells; a plurality of local bit lines connected to respective memory cells of the plurality of memory cells; and a first amplifier. The first amplifier receives read data from each local bit line of the plurality of local bit lines and determines a transition speed of an output level of the first amplifier in response to receiving a combination of at least two pieces of read data. The first amplifier transfers, based on the determined transition speed, multivalued data of the read data to a read global bit line.

Abstract: A silicon nitride film, which is a second hard mask, is dry etched to be removed completely. The silicon nitride film, which is formed on a sidewall of a silicon nitride film used as a first hard mask, has a relatively low etching rate. Therefore, if the silicon nitride film is continued etching until the corresponding portion thereof is removed, polysilicon is etched in a direction of depth in trench shape. Then, floating gates in adjacent cells are separated and a step portion of the polysilicon is formed. Consequently, a remaining portion of the silicon nitride film used as the first hard mask is removed, an ONO film is laminated on a whole surface of the poly silicon having the step portion on an edge that has been etched, and then, a polysilicon for a control gate is laminated on the ONO film.

Abstract: A memory device including a ferroelectric memory array is described. In one embodiment, the ferroelectric memory array includes a user memory space. The memory device includes control logic configured to provide external read and write access for a host system to the user memory space upon authentication between the host system and the memory device. The host system accesses the user memory space and communicates with the control logic through address, data and control buses. The memory device further includes memory interface configured to interface between the address, data and control buses and the control logic, and through which the host system communicates with the control logic, and a cipher engine in communication with the control logic and the memory interface, the cipher engine comprising a random number generator and an encryption/decryption block. Other embodiments are also described.

Abstract: Disclosed herein are system, methods, and apparatus for low power capacitive sensors. Apparatus may include a timing block configured to generate a repetitive trigger signal having a first frequency, and further configured to generate a clock signal having a second frequency. Apparatus may also include a sensing block coupled with the timing block and configured to, in response to the repetitive trigger signal, detect a change in capacitance associated with an object proximate to a capacitive sensor button by applying an excitation signal to the capacitive sensor button during a measurement period. Apparatus further include a wake logic block coupled with the sensing block and configured to transition a processing unit from a first power consumption state to a second power consumption state in response to the sensing block detecting the change in capacitance associated with the object proximate to the capacitive sensor button.

Abstract: A plurality of functional elements are all located on a same integrated circuit wherein at least one of the functional elements comprises a micro-controller. A configuration data store in the integrated circuit stores configuration values loaded by the micro-controller. A plurality of connectors are configured to connect the integrated circuit to external signals. A programmable interconnect also located in the integrated circuit programmably connects together the plurality of functional elements and the plurality of connectors according to the configuration values loaded into the configuration data store.

Abstract: A power supply device that includes a switch circuit to which an input voltage is supplied, a coil coupled between the switch circuit and an output terminal from which an output voltage is outputted. A voltage adding circuit adds a slope voltage to a reference voltage. A control unit compares a feedback voltage corresponding to the output voltage and the reference voltage and switches the switch circuit at a timing corresponding to a comparison result of the feedback voltage and the reference voltage. A slope adjustment circuit differentiates a current flowing in the coil and adjusts a slope amount of the slope based on a differentiation result of the current.

Abstract: Semiconductor devices and methods of manufacturing such devices are described herein. According to embodiments, the semiconductor device can be made by forming a dielectric layer at a first region and at a second region of a semiconductor substrate. A gate conductor layer is disposed over the dielectric formed in the first and the second regions of the semiconductor substrate, and the second region is masked. A split gate memory cell is formed in the first region of the semiconductor substrate with a first gate length. The first region is then masked, and the second region is etched to define a logic gate that has a second gate length. The first and second gate lengths can be different.

Abstract: A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact. Next a self-aligned contact (SAC) is formed electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof. A ferroelectric spacer is then formed in the opening medially of the SAC, and a top electrode spacer formed in the opening over the insulating cap and medially of the ferroelectric spacer.

Abstract: In patterning a transistor, some of a layer of gate dielectric material is allowed to remain over a semiconductor substrate upon which the transistor is formed. This remaining dielectric material retards the implantation of dopants into the underlying substrate, effectively lengthening a channel region of the transistor. This mitigates unwanted short channel effects, such as leakage currents, for example, and thus mitigates yield loss by establishing a transistor that performs in a more predictable or otherwise desirable manner.

Abstract: Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.

Abstract: A system includes circuitry to exchange multiple radio signals with a peripheral device. The system further includes a processing device configured to identify time periods for the multiple radio signals to travel between the circuitry and the peripheral device, wherein the processing device is configured to determine a distance and direction of movement of the peripheral device according to the identified time periods.

Abstract: Efficient and convenient storage systems and methods are presented. In one embodiment a storage system includes a host for processing information, a memory controller and a memory. The memory controller controls communication of the information between the host and the memory, wherein the memory controller routes data rapidly to a buffer of the memory without buffering in the memory controller. The memory stores the information. The memory includes a buffer for temporarily storing the data while corresponding address information is determined.

Abstract: A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).

Abstract: A multiplexing auxiliary processing element (PE) performs a process that includes the operations of receiving signals of a plurality of upstream processing elements (PEs) including a plurality of pairs of PEs arranged on the input side; supplying the signals from the upstream PEs to a multiplex PE that is multiplexed and used so that the signals are subjected to a predetermined process by the multiplex PE; receiving the processed signals subjected to the predetermined process by the multiplex PE and sequentially supplying the signals to a plurality of downstream PEs arranged on the output side; and performing operations of the upstream PEs synchronously with the supply of the processed signals to the corresponding downstream PEs on the basis of setting of the multiplexing auxiliary PE.

Abstract: A signal processor includes a period detection section which detects that a period is currently used for communication of a frame; a pattern detection section which detects, from the received signal, a first signal pattern by which the end of communication of the frame is recognized; and an output processing section which outputs the received signal to a controller; configured to instruct, upon detection of the first signal pattern in the period being currently used for communication of a frame, the controller to halt startup of communication action of the next frame, until the period being currently used for communication of a frame comes to the end, to thereby reduce an event such that frames are transmitted from a plurality of communication devices simultaneously, and to thereby allow the communication action for the next frame to proceed correctly.

Abstract: A semiconductor device 100 includes: a first semiconductor package 10; a first interposer 12 having an upper surface on which the first semiconductor package 10 is mounted; a first molding resin 14 that is provided on the upper surface of the first interposer 12 and seals the first semiconductor package 10; a second semiconductor package 20 mounted on an upper surface of the first molding resin 14; a second interposer 22 on which the second semiconductor package 20 is mounted by flip chip bonding; and a second molding resin 40 that is provided on the upper surface of the first interposer 12 and seals the first molding resin 14, the second semiconductor package 20, and the second interposer 22. The second semiconductor package 20 is mounted, with a surface thereof opposite to another surface mounted on the second interposer 22 faced down, on the upper surface of the first molding resin 14 via an adhesive 30.

Abstract: An apparatus and method to measure a self-capacitance of a capacitive sense array is described. The apparatus includes a first integrating capacitor, a first modulator, a second integrating capacitor, and a second modulator. The first modulator is operatively coupled to the first integrating capacitor. The second modulator is operatively coupled to the second integrating capacitor. The first modulator in conjunction with the first integrating capacitor and the second modulator in conjunction with the second integrating capacitor measure a self-capacitance of a capacitive-sense array by performing a full-wave synchronous rectification.

Abstract: Embodiments of the present invention include an apparatus, method, and system for integrating data processing logic with memory. An embodiment of a memory integrated circuit is designed to execute a task on the data in a memory array within a memory integrated circuit. The memory integrated circuit can include a memory array, a data access component, a data holding component, and a logic component. The data access component can be coupled to the memory array and configured to provide an address to the memory array. The data holding component can be coupled to the memory array and configured to temporarily store the data in the memory array located at the address. The logic component can be coupled to both the data access component and the data holding component, and be configured to execute a task using data received from the data holding component. The logic component can include combinational or sequential logic.

Abstract: A device can include an interface circuit configured to translate memory access requests at a controller interface of the interface circuit into signals at a memory device interface of the interface circuit that is different from the controller interface, the interface circuit including a write buffer memory configured to store a predetermined number of data values received at a write input of the controller interface, and a read buffer memory configured to mirror a predetermined number of data values stored in the write buffer memory; wherein the memory device interface comprises an address output configured to transmit address values, a write data output configured to transmit write data on rising and falling edges of a periodic signal, and a read data input configured to receive read data at the same rate as the write data.

Abstract: A semiconductor device includes an oxide-nitride-oxide (ONO) dielectric stack on a surface of a substrate, and a high work function gate electrode formed over a surface of the ONO dielectric stack. The ONO dielectric stack includes a multi-layer charge storage layer including a silicon-rich, oxygen-lean top silicon nitride layer and an oxygen-rich bottom silicon nitride layer. The high work function gate electrode includes a P+ doped polysilicon layer.