Abstract: A system can include a processor coupled to a bus; a first memory coupled to the bus, configured to limit access to a privileged portion according to at least protection values; a second memory coupled to the bus and having a privileged supervisory portion configured to be section erasable, access to the second memory being limited according to at least the protection values; and a boot sequence stored in the privileged portion that configures the processor to decode values stored in the supervisory portion into the protection values for storage in protection value registers.

Abstract: Described is a semiconductor package frame including a material comprising wire openings a die-mounting surface area with a die-mounting surface and identification markings included within the die-mounting surface. The identification markings uniquely identify the semiconductor package frame from among other semiconductor package frames comprising different identification markings.

Abstract: The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.

Abstract: A current measurement unit measuring power supply currents each consumed in a plurality of circuit blocks of which at least one of the circuit blocks includes a processor, and outputting the measurement result as the power supply current values. A selection unit selecting at least one of the power supply current values according to selection information. A trace buffer sequentially holding the power supply current values being selected by the selection unit together with execution information of the processor, and sequentially outputting the held information. By selecting the power supply current values of the circuit blocks required for debugging according to the selection information, the number of external terminals of a semiconductor integrated circuit required for the debugging which includes tracing the power supply current values may be reduced. As a result, a chip size of the semiconductor integrated circuit with a debug function may be reduced.

Abstract: A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.

Abstract: Disclosed herein are test control circuit, semiconductor memory device, and testing method embodiments for suppressing variations in test time while reducing the influence of a failed cell. An embodiment operates by performing a first verify of a cell selected in a predetermined order; storing an address of the cell when the first verify is a fail until the number of addresses is a predetermined number; applying a predetermined voltage to a plurality of cells of an erase unit when a next fail is determined in the first verify after the predetermined number of addresses have been stored; and performing a second verify to one or more cells indicated by the predetermined number of addresses, wherein the first verify is performed from a cell at the next fail according to the predetermined order after the second verify has finished.

Abstract: A semiconductor device having a gate stack on a substrate is disclosed. The gate stack may include a mask layer disposed over a first gate conductor layer. The first gate conductor layer may be laterally etched beneath the mask layer to create an overhanging portion of the mask layer. A sidewall dielectric can be formed on the sidewall of the first gate conductor layer beneath the overhanging portion of the mask layer. A sidewall structure layer can be formed adjacent to the sidewall dielectric and beneath the overhanging portion of the mask layer. The mask layer can be removed. The first gate conductor layer can be used to form a memory gate and the sidewall structure layer can be used to form a select gate.

Abstract: An approach to use silicided bit line contacts that do not short to the underlying substrate in memory devices. The approach provides for silicide formation in the bit line contact area, using a process that benefits from being self-aligned to the oxide-nitride-oxide (ONO) nitride edges. A further benefit of the approach is that the bit line contact implant and rapid temperature anneal process can be eliminated. This approach is applicable to embedded flash, integrating high density devices and advanced logic processes.

Abstract: A reconfigurable circuit includes a reconfigurable arithmetic execution unit array including a plurality of arithmetic execution units and a network circuit to provide reconfigurable connections between the arithmetic execution units, a suspension control circuit configured to control suspension and resumption of operation of the reconfigurable arithmetic execution unit array, and a buffer circuit configured to temporarily store data supplied from an external source upon suspension of the operation of the reconfigurable arithmetic execution unit array and to supply the stored data to the reconfigurable arithmetic execution unit array upon resumption of the operation of the reconfigurable arithmetic execution unit array.

Abstract: A DC-DC converter for generating an output voltage from input voltage, includes: an output stage for outputting the output voltage; an error amplifier having an input and a reference input for receiving a feedback voltage at the input in accordance with the output voltage and for receiving a reference voltage at the reference input, the error amplifier generating an amplified voltage for driving the output stage, the amplifier voltage corresponding to the difference between the feedback voltage and the reference voltage; a phase compensation unit for generating a phase compensation component to the feedback voltage; and a phase compensation controller for controlling the phase of the phase compensation unit; wherein the feedback voltage determined by the output voltage plus said phase compensation component.

Abstract: A sensor system comprising a plurality of sensors configured to produce an output based on at least one condition and isolated from a measurement circuit is described. The isolation circuit may be configurable to output an analog signal within the measurement range of a measurement signal.

Abstract: Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line openings containing a bit line dielectric between the memory cells. The memory cell contains a charge storage layer and a first poly gate. The bit line opening extends into the semiconductor substrate. By containing the bit line dielectric in the bit line openings that extend into the semiconductor substrate, the memory device can improve the electrical isolation between memory cells, thereby preventing and/or mitigating TPD.

Abstract: The present invention provides a semiconductor device with an improved yield ratio and reduced height and manufacturing cost; and a method of manufacturing the semiconductor device. According to an aspect of the present invention, there is provided a semiconductor device including a substrate, a semiconductor element that is flip-chip connected to the substrate, and a molding portion that seals the semiconductor element. The side surfaces of the semiconductor element are enclosed by the molding portion. An upper surface of the semiconductor element is not enclosed by the molding portion. Damage to the side surfaces of the semiconductor element caused by an external impact when the semiconductor device is stored is minimized, because the molding portion protects the side surfaces of the semiconductor element. Accordingly, the yield ratio of the semiconductor device is improved.

Abstract: Apparatuses and methods of touch discrimination are described. One method receives data from an occupant classification system and sets a touch detection threshold of a touch-sensing device based on the received data. The method may be used to discriminate between an adult touch and a child touch and to selectively allow access to control functionality to adults and not to children.

Abstract: An output voltage controller includes a first controller which controls current supply to a inductor based on an output voltage, and a second controller which controls current supply to the inductor by controlling a period when an input end to which an input voltage is inputted, the inductor, and an output end from which the output voltage is outputted are coupled based on the input voltage.

Abstract: A method of minimizing imprint in a ferroelectric capacitor uses a gradually attenuated AC field to electrically depolarize the ferroelectric capacitor before being packaged. The AC field is linearly attenuated, and generated using a series of voltage pulses, down to a minimum allowed voltage. A final pulse is a positive voltage to minimize hydrogen degradation during packaging. Thermal depoling can also be used.

Abstract: Methods and structures for reducing resistance in wordlines of an integrated circuit memory device are disclosed. In one embodiment, the method includes forming multiple columns of polycrystalline silicon for respective number of wordlines, forming core transistor junctions and periphery transistor junctions associated with the wordlines, performing a salicidation process for the periphery transistor junction and performing a salicidation process for the columns of polycrystalline silicon to from the wordlines with low resistance.

Abstract: In the present method of fabricating a semiconductor device, initially, a semiconductor substrate is provided. An oxide layer is provided on and in contact with the substrate, and a polysilicon layer is provided on and in contact with the oxide layer. A layer of photoresist is provided on the polysilicon layer, and the photoresist is patterned to provide a photoresist body, which is used as a mask to etch away polysilicon and oxide, forming a polysilicon element thereunder. The photoresist body is then removed. A nickel layer is provided on the resulting structure, and a reaction step is undertaken to provide that nickel diffuses into the exposed top and side portions of the polysilicon body, forming nickel silicide. After the reaction step, the remaining nickel is removed, and a chemical-mechanical polishing step is undertaken to remove nickel silicide so that a pair of nickel silicide bodies remain, separated by polysilicon.

Abstract: An embodiment of a capacitive sensor array may comprise a first set of sensor electrodes each comprising one or more large subelements and a second set of sensor electrodes each comprising one or more small subelements. In one embodiment, each of the small subelements may be smaller than any of the large subelements, and the first set of sensor electrodes and the second set of sensor electrodes are formed from a single layer of conductive material. In one embodiment, the surface area of the capacitive sensor array may be divisible into a grid of N×M unit cells, wherein each of the N×M unit cells contains one of the large subelements and k of the small subelements, where k is greater than or equal to 2.

Abstract: A capacitance sense system can include a capacitance sense input configured to receive an input signal that varies according to a sensed capacitance; an integrator/discharge circuit configured to integrate the input signal and discharge the integrated input signal toward the reference level in conversion operations; and a remainder retainer section configured to quantize the discharging of the integrated input signal, and retain any remainder of the integrated input signal that follows a quantization point for a next conversion by the integrator/discharge circuit.