Abstract: Active stylus operation when there is no physical connection between the stylus and the touch array requires communication and synchronization. It is possible to use the touchscreen stack-up itself to communicate synchronization signals or other information optically by outfitting the active stylus with an optical receiver and transmitting signals either with additional diodes or by modulating the display clock itself.

Abstract: An apparatus includes a selection device to select a spreading profile from a plurality of spreading profiles, and an oscillation device to generate clock signals having different frequencies over time based on the selected spreading profile. A method includes selecting a spreading profile from a plurality of spreading profiles, and generating clock signals having different frequencies over time based on the selected spreading profile.

Abstract: Ferroelectric capacitors used in ferroelectric random access memories (F-RAM) and methods for fabricating the same to reduce sidewall leakage are described. In one embodiment, the method includes depositing over a surface of a substrate, a ferro stack including a bottom electrode layer electrically coupled to a bottom electrode contact extending through the substrate, a top electrode layer and ferroelectric layer there between. A hard-mask is formed over the ferro stack, and a top electrode formed by etching through the top electrode layer and at least partially through the ferroelectric layer. A non-conductive barrier is formed on sidewalls formed by etching through the top electrode layer and at least partially through the ferroelectric layer, and then a bottom electrode is formed by etching the bottom electrode layer so that conductive residues generated by the etching are electrically isolated from the top electrode by the non-conductive barrier.

Abstract: A method and apparatus to operate a watchdog timer having a first time out period in a processing system. The watchdog timer receives an indication of a change in a mode of operation in the processing system. In response to the change in the mode of operation of the processing system, the watchdog timer changes the time out period to a second time out period corresponding to the new mode of operation.

Abstract: A self-modulated voltage reference circuit may generate a reference voltage by receiving an internal reference voltage of a programmable device at a first input of a comparator block of the programmable device, receiving a feedback voltage at a second input of the comparator block, generating a pulse density modulated (PDM) signal based on a difference between the reference voltage and the feedback voltage, outputting the PDM signal at a digital output pin of the programmable device, and filtering the PDM signal to generate the output reference voltage.

Abstract: An apparatus and method of measuring a collective capacitance on a group of capacitive sense elements from at least one of rows or columns of a capacitance sense array when in a first mode, and individually measuring capacitances on each of the rows and columns when in a second mode.

Abstract: Apparatus and methods of active stylus to host device data transmitting are described. One method receives, at a stylus, an indication that a host device is performing a first coordinate measurement operation to determine a coordinate of the stylus proximate to a capacitive sense array of the host device. The set of coordinate measurement operations includes a first measurement operation of a first set of electrodes of the capacitive sense array and a second measurement operation of a second set of electrodes of the capacitive sense array. While the host device is performing the set of coordinate measurement operations, the stylus transmits a data packet of stylus data to the host device. In particular, the stylus transmits a first bit of the data packet during the first measurement operation and transmits a second bit of the data packet during the second measurement operation.

Abstract: Several embodiments including methods, systems, and physical computer-readable storage media are configured to multiplex a single end-point memory (EPM) structure between a HS USB interface and a SS USB interface, which includes determining whether the SS USB interface is enabled, if the SS USB interface is enabled, detecting the SS USB interface, selecting the HS USB interface, if the SS USB interface is enabled, but not detected, and multiplexing between a functionality of a HS USB device interface and a functionality of a HS USB host interface, if the SS USB interface is not enabled.

Abstract: Apparatuses and methods of field-line repeater structures for sense arrays are described. One apparatus includes a substrate, a capacitive-sense array with electrodes disposed on one or more sides of the substrate in one or more layers and a protective cover layer disposed to cover the capacitive-sense array. A coating film is disposed over the protective cover layer and a field-line repeater (FLR) structure of floating electrodes is disposed between the coating film and the protective cover layer.

Abstract: An embodiment of an integrated circuit device may comprise an integrated circuit package, a sensor element attached within the integrated circuit package, a capacitance sensor coupled with the sensor element and situated within the integrated circuit package, wherein the capacitance sensor is configured to measure a capacitance of the sensor element, and an output pin positioned at the exterior of the integrated circuit package, wherein the output pin is configured to carry a signal based on the measured capacitance of the sensor element.

Abstract: Left and right stereo channels L and R are provided to a first set of two or more speakers of a speaker array. A bass signal B is applied to a second set of one or more speakers of the speaker array. The level of L and R applied to the first set of speakers is increased as the first set of speakers is rotated to become more horizontally aligned. The level of B applied to the first set of speakers is decreased as the first set of speakers is rotated to become more horizontally aligned.

Abstract: A device including a ferroelectric memory and methods of manufacturing the same are provided. In one embodiment, the device includes a semiconductor die with an integrated circuit fabricated thereon, a stress buffer die mounted to the semiconductor die overlying the integrated circuit, and a molding compound encapsulating the semiconductor die and the stress buffer die. Generally the integrated circuit includes a ferroelectric memory. In some embodiments, the device further includes a polyimide layer between the stress buffer and the semiconductor die. Other embodiments are also provided.

Abstract: An environment and method are provided for designing and implementing a circuit comprising an integrated circuit (IC) including a number of parametric analog elements for which operating parameters can be set. Generally, the method comprises: specifying requirements for the circuit including physical properties to be sensed by the circuit and actions to be taken by the circuit; designing the circuit based on the specified requirements and resources available on the IC; and setting parameters of at least one of the parametric analog circuit elements of the IC based on the circuit design. In one embodiment, the specifying, designing, and setting parameters steps are performed using a computer executable code embodied in a computer readable medium on a server coupled to a client computer through an internet protocol network. Other embodiments are also provided.

Abstract: A method of operating a memory in an RFID application includes locating a memory pointer at a fixed read/writeable memory location in the memory, determining a range of a pedigree buffer, initializing the memory pointer to a lowest value in the range, providing a second memory location that serves as a trigger address for an indirect write, and writing to a next location in the pedigree buffer by directing write data to the trigger address, which is then automatically written at a location pointed to by the memory pointer.

Abstract: Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a first transistor. The first transistor may be coupled to a second transistor and included in a first memory cell. The methods include receiving a second voltage at a third transistor. The third transistor may be coupled to a fourth transistor and included in a second memory cell. The first and second memory cells may be coupled to a common source line. The methods include receiving a third voltage at a gate of the second transistor and a gate of the fourth transistor that may cause them to operate in cutoff mode. The methods may include receiving a fourth voltage at a gate of the first transistor. The fourth voltage may cause, via Fowler-Nordheim tunneling, a change in a charge storage layer included in the first transistor.

Abstract: An intelligent serial interface circuit in accordance with one embodiment of the invention can include a first communication interface circuit for enabling a first communication protocol. The intelligent serial interface circuit can also include a second communication interface circuit for enabling a second communication protocol. Furthermore, the intelligent serial interface circuit can include a detector circuit coupled to the first communication interface circuit and the second communication interface circuit. The detector circuit can be for automatically detecting a factor that indicates automatically enabling the first communication interface circuit and automatically disabling the second communication interface circuit. The detector circuit can be for detecting a coupling of a pin of the first communication interface circuit that is not used by the second communication interface circuit.

Abstract: A resistive divider circuit may be operatively coupled with a modulated resistor circuit, wherein the resistive divider circuit and the modulated resistor circuit for an effective resistor circuit providing an effective attenuation. A variable duty cycle signal modulates the modulated resistor circuit to control the effective attenuation.

Abstract: A system and method for synchronization of touch-panel devices is described. In one embodiment, the system includes a first controller device configured to control operations of a first portion of a touch-panel device such that the first controller device is further configured to generate a single master timing signal. The single master timing signal is configured to synchronize operation of the first controller device and a second controller device that is configured to control operations of a second portion of a touch-panel device.

Abstract: A method and apparatus for reducing influence of noise for touch screen controllers employing noise listening synchronization, delay lines, filtering and sensing selected touch screen electrodes.

Abstract: A latch circuit and method includes providing a first tri-gate non-volatile device, providing a second tri-gate non-volatile device, coupling the first tri-gate non-volatile device to the second tri-gate non-volatile device, erasing the first tri-gate non-volatile device, programming the second tri-gate non-volatile device, and latching an output node of the latch device to a logic state determined by respective thresholds of the first and second tri-gate non-volatile devices. Coupling the first tri-gate non-volatile device to the second tri-gate non-volatile device can include direct coupling, or indirect coupling through a cross-coupled circuit.