Abstract: A method for configuring a touchscreen controller may include identifying a model of a touchscreen by measuring a capacitance or resistance of at least one element integrated in the touchscreen, identifying the model of the touchscreen based on the measured capacitance or resistance, and configuring the touchscreen controller based on the identified model of the touchscreen.

Abstract: A method of fabricating a memory device is described. Generally, the method includes: forming a tunneling layer on a substrate; forming on the tunneling layer a multi-layer charge storing layer including at least a first charge storing layer comprising an oxygen-rich oxynitride overlying the tunneling layer, and a second charge storing layer overlying the first charge storing layer comprising a silicon-rich and nitrogen-rich oxynitride layer that is oxygen-lean relative to the first charge storing layer and comprises a majority of charge traps distributed in the multi-layer charge storing layer; and forming a blocking layer on the second oxynitride layer; and forming a gate layer on the blocking layer. Other embodiments are also described.

Abstract: A method for locating a conductive object at a touch-sensing surface may include detecting a first resolved location for the conductive object at the touch-sensing surface based on a first scan of the touch-sensing surface, predicting a location for the conductive object, and determining a second resolved location for the conductive object by performing a second scan of a subset of sensor electrodes of the touch-sensing surface, wherein the subset of sensor electrodes is selected based on the predicted location of the conductive object.

Abstract: A circuit with electrostatic discharge protection is described. In one case, the circuit includes trigger device configured to protect a component connected to a node of the circuit during an electrostatic discharge event, the trigger device includes an isolation structure interposed between a gate oxide layer and an extended drain region. A portion of the extended drain region proximate the isolation structure is substantially metal-free.

Abstract: Embodiments of a circuit and method for setting initial trim bits in an integrated circuit (IC) are described. The circuit includes a memory array including a plurality of trim bit cells to store and provide trim bits to trim registers in a main circuit of the IC following energizing of the IC. The memory array further includes replica bit circuitry to generate a number of replica bits. A logic circuit coupled to the memory array and the main circuit of the IC is configured to receive the replica bits, and to provide a signal to the IC that indicates when the trim bits are valid. In one embodiment, the circuit further includes redundancy check logic configured to receive a number of the trim bits from the memory array, compare the number of trim bits to a pre-determined or computed value, and to provide a BITS_OK signal to the logic circuit.

Abstract: A method for improving data retention in a 2T/2C ferroelectric memory includes baking a ferroelectric memory configured to operate as an array of 1T/1C memory cells for a period of time, and then configuring the ferroelectric memory to function as an array of 2T/2C memory cells, wherein the baking pre-imprints the ferroelectric capacitors in the ferroelectric memory and stabilizes a 2T/2C opposite state margin and enhances data retention. A corresponding memory circuit for configuring an array of memory cells for either 1T/1C operation or 2T/2C operation includes a plurality of sense amplifiers, a configurable reference circuit coupled to a logic circuit, a memory array, and a column decoder, wherein components are coupled together through a bit line and a complementary bit line, and wherein the logic circuit can configure the reference circuit for 1T/1C operation or 2T/2C operation.

Abstract: A shunt regulator for an RFID tag chip is powered from split outputs from the RF rectifier, including a first output for providing a power delivery path to on-chip circuits and a second output for providing a discharge-regulation path. The shunt regulator includes a capacitor coupled between the first output and ground. The shunt regulator further includes an input node for receiving a power supply voltage from the rectifier split outputs, a first diode having an anode coupled to the input node, a second diode having an anode coupled to the input node, a resistor divider circuit and amplifier coupled between a cathode of the first diode and ground, transistor having a control terminal coupled to an output of the resistor divider and amplifier circuit, and a current path coupled between a cathode of the second diode and ground.

Abstract: A host device can download a firmware update to a peripheral device having previously enumerated with the host device. The host device can perform link training with the peripheral device in response to a re-enumeration indication received from the peripheral device. The link training can include switching a Link Training and Status State Machine (LTSSM) in the host device from an active state (U0) to an RX.Detect state and synchronizing with the peripheral device in the RX.Detect state. The host device can re-enumerate with the peripheral device utilizing the firmware update after the host device completes link training with the peripheral device.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A method may include generating display driver signals that vary between only two levels and applying the display driver signals to opposing electrodes of a display segment within a display device. An intrinsic capacitance of the display device filters the display driver signals to generate different analog signal levels at the display segment of the display device. The method varies the pulse density of the display driver signals to select or de-select the display segment based on an average voltage magnitude across the display segment over a time period. The display segment is activated when the average voltage magnitude exceeds a threshold value.

Abstract: Apparatuses and methods of input attenuator circuits are described. One sensing circuit includes an attenuator circuit to receive a signal from an electrode of a sense array. The attenuator circuit is configured to attenuate input current of the signal. The attenuator circuit includes an attenuation matrix including an input terminal to receive the signal and multiple resistors. The attenuation matrix is configured to split the input current into an output current of the attenuation signal on a first output terminal and a second output current on a second output terminal. The attenuation matrix is to output the attenuated signal on the first output terminal to an integrator of the sensing circuit. The attenuator circuit also includes a buffer coupled between the attenuation matrix and the integrator. The buffer is configured to maintain a substantially same voltage at the first output terminal and the second output terminal.

Abstract: A memory cell can include at least a first programmable section coupled between a supply node and a first data node; a volatile storage circuit coupled to the first data node; and the programmable section includes a programmable transistor having a first source/drain (S/D) region shared with a first transistor, and a second S/D region shared with a second transistor; wherein the first S/D region has a different dopant diffusion profile than the second S/D region, and the programmable transistor has a charge storage structure formed between its control gate and its channel. Methods of forming such a memory cell are also disclosed.

Abstract: A nonvolatile charge trap memory device is described. The device includes a substrate having a channel region. A gate stack is disposed above the substrate over the channel region. The gate stack includes a multi-layer charge-trapping region having a first deuterated layer. The multi-layer charge-trapping region may further include a deuterium-free charge-trapping layer.

Abstract: A memory device is described. Generally, the device includes a memory transistor and a metal oxide semiconductor (MOS) logic transistor. The memory transistor includes: a channel region electrically connecting a source region and a drain region, the channel region comprising polysilicon; an oxide-nitride-nitride-oxide (ONNO) stack disposed above the channel region, the ONNO stack comprising a multi-layer charge-trapping region including an oxygen-rich first nitride layer and an oxygen-lean second nitride layer disposed above the first nitride layer; and a gate electrode comprising doped polysilicon formed over a surface of the ONNO stack. The MOS logic transistor includes a gate oxide and a gate electrode comprising doped polysilicon. Other embodiments are also described.

Abstract: In an example embodiment, an apparatus includes a sensing device. The sensing device includes circuitry configured to sense self-capacitance and circuitry configured to sense mutual-capacitance, each configured to detect capacitance values corresponding to whether an object is proximate to a touch screen. The sensing device is configured to measure a first capacitance value using the self-capacitance circuitry during self-capacitance sensing operations and to measure a second capacitance value using the mutual-capacitance circuitry during mutual-capacitance sensing operations.

Abstract: A method and apparatus to operate programmable routing logic comprise receiving, from a fixed function block, a first request, responsive to the first request, forwarding the first request to a first resource of one or more controllers, the first resource allocated to the fixed function block. The method and apparatus further comprise receiving, from a programmable function block, a second request, and responsive to the second request, forwarding the second request to a second resource of the one or more controllers, the second resource allocated to the programmable function block.

Abstract: A current-limiting device may be configured to be placed along a power-supply bus to limit current through a first complimentary-metal-oxide semiconductor (CMOS) circuit coupled to the power-supply bus so that current does not exceed a trigger current level of a pnpn diode in a second CMOS circuit coupled to the power bus.

Abstract: Techniques for computer-assisted routing of an electronic design for a programmable target device are described herein. In an example embodiment, a computer system displays a representation of the programmable target device in a user interface. The computer system receives first user input that indicates a first component in the electronic design for the programmable target device. The computer system determines one or more second components of the electronic design that can be routed to the first component and displays one or more visual objects that indicate the one or more second components. The computer system then receives second user input that selects a particular component from the one or more second components and stores interconnect data indicating that the first component is routed to the particular component.

Abstract: A circuit can include an input section configured to store a data signal in response to phase shifted clocks to generate a plurality of sample values; an output section configured to store one of the sample values; and a logic section configured to selectively output one of the sample values to the output section in response to the sample values and a previous sampled value stored in the output section.

Abstract: An integration circuit including a first capacitor is operatively coupled to a comparator. The comparator is configured to compare a first capacitor voltage of the first capacitor to a reference voltage and produce a first comparator output based on the comparison. A current generator is operatively coupled with the integration circuit and configured to balance charge on the first capacitor. A control unit is operatively coupled to the comparator and the current generator and configured to balance charge on the first capacitor by sensing the first comparator output and controlling the current generator based on the first comparator output.