Abstract: A MEMS resonator system comprises a MEMS resonator, kick start circuitry, feedback circuitry, an oscillator, and a switch. The MEMS resonator system is configured to provide a pulsed kick-start signal having a frequency and period such that energy delivered to the MEMS resonator is optimized in a short period of time, resulting is reduced oscillator startup time. The MEMS resonator system is configured to switch out the kick-start signal when the MEMS resonator oscillation has been achieved, and switch in feedback circuitry to maintain the MEMS resonator in a state of oscillation.

Abstract: A microelectromechanical systems (MEMS) device includes at least two rate sensors (20, 50) suspended above a substrate (30), and configured to oscillate parallel to a surface (40) of the substrate (30). Drive elements (156, 158) in communication with at least one of the rate sensors (20, 50) provide a drive signal (168) exhibiting a drive frequency. One or more coupling spring structures (80, 92, 104, 120) interconnect the rate sensors (20, 50). The coupling spring structures enable oscillation of the rate sensors (20, 50) in a drive direction dictated by the coupling spring structures. The drive direction for the rate sensors (20) is a rotational drive direction (43) associated with a first axis (28), and the drive direction for the rate sensors (50) is a translational drive direction (64) associated with a second axis (24, 26) that is perpendicular to the first axis (28).

Abstract: Transistors and methods of fabricating are described herein. These transistors include a field plate (108) and a charged dielectric layer (106) overlapping at least a portion of a gate electrode (102). The field plate (108) and charged dielectric layer (106) provide the ability to modulate the electric field or capacitance in the transistor. For example, the charged dielectric layer (106) provides the ability to control the capacitance between the gate electrode (102) and field plate (108). Modulating such capacitances or the electric field in transistors can facilitate improved performance. For example, controlling gate electrode (102) to field plate (108) capacitance can be used to improve device linearity and/or breakdown voltage. Such control over gate electrode (102) to field plate (108) capacitance or electric fields provides for high speed and/or high voltage transistor operation.

Abstract: A compensated hysteresis circuit comprises a hysteresis circuit including an output node and a first control transistor. The first control transistor provides feedback to the hysteresis circuit. A temperature and voltage compensation circuit includes a self-biasing threshold control circuit including an input coupled to the output node of the hysteresis circuit, and a first trim transistor coupled between the first control transistor of the hysteresis circuit and the self-biasing threshold control circuit.

Abstract: A MEMS device (40) includes a base structure (42) and a microstructure (44) suspended above the structure (42). The base structure (42) includes an oxide layer (50) formed on a substrate (48), a structural layer (54) formed on the oxide layer (50), and an insulating layer (56) formed over the structural layer (54). A sacrificial layer (112) is formed overlying the base structure (42), and the microstructure (44) is formed in another structural layer (116) over the sacrificial layer (112). Methodology (90) entails removing the sacrificial layer (112) and a portion of the oxide layer (50) to release the microstructure (44) and to expose a top surface (52) of the substrate (48). Following removal, a width (86) of a gap (80) produced between the microstructure (44) and the top surface (52) is greater than a width (88) of a gap (84) produced between the microstructure (44) and the structural layer (54).

Abstract: A data processor includes a packet selector. The packet selector creates an ordered list of packets, each packet corresponding to a respective communication flow, determines whether each packet in the ordered list of packets is eligible for transfer to a prefetch unit based on whether a preceding packet in the same communication flow has been transferred to the prefetch unit, and sets a selection priority for each packet based on start time constraints for the respective communication flow, and based on a processing status of a preceding packet in the communication flow.

Abstract: A method includes forming a packaged integrated circuit that includes forming a lead frame by separating an outer portion of the metal structure into a plurality of leads by stamping. The plurality of leads have sides with a first concavity. The lead frame is further formed by performing an etch on the sides of the plurality of leads to achieve a second concavity on the sides of leads. The second concavity is greater than the first concavity. A semiconductor die is attached to a center portion of the metal structure. Electrical attachments are made between the die and the leads.

Abstract: A memory cell includes a first bidirectional resistive memory element (BRME), and a second BRME, a first storage node, and a second storage node . A resistive memory write to the cell includes placing the first BRME and the second BRME in complementary resistive states indicative of the value being written. During a subsequent restoration operation, the value as written in the first BRME and second BRME is written to the first storage node and the second storage node while a wordline connected to the memory cell is deasserted.

Abstract: A level shifter includes a latch supplied at a first voltage VDD1. First and second switches are connected in series with first and second latches and are cross-coupled to maintain the state of the latches during a stability period. A controller responds to a change of state of an input signal at a voltage different from the first voltage at an end of the stability period to deactivate both the first and second switches, to cause third and fourth switches to deactivate both the first and second latches during a transition period, and subsequently to change the state of the latch and maintain the changed state during the subsequent stability period. This avoids undesirable compromise between current consumption and transfer delay, as in a conventional level shifter.

Abstract: A quantizer includes a voltage reference network and a set of comparators coupled with the voltage reference network. The voltage reference network generates a plurality of reference voltages. Each of the comparators receives an input signal and produces a sequence of digital samples. The set of comparators includes first, second, and third subsets of comparators. Each comparator of the first subset includes a switched capacitor stage, each comparator of the second subset includes a preamplifier stage, and each comparator of the third subset includes a switched capacitor stage. The first and third subsets of comparators compares the input signal with reference voltages corresponding to the upper and lower voltage ranges of the input signal, and the second subset of comparators compares the input signal with reference voltages corresponding to the middle voltage range of the input signal.

Abstract: A semiconductor package includes a lead frame, a semiconductor die, bond wires providing an electrical connection between the die and the lead frame, and a mold compound that encapsulates the lead frame, the die and the bond wires. The lead frame includes spaced apart first and second frame members each having an inner peripheral edge and an opposing outer peripheral edge, spaced apart lead pads disposed between the inner peripheral edges of the first and second frame members, and conductive leads disposed proximate to the outer peripheral edge of each of the first and second frame members. The die is mounted on the lead pads.

Abstract: A method of managing a memory of an apparatus, the apparatus executing one or more processes using the memory. The method comprises maintaining a plurality of lists of identifiers, wherein each list has an associated size value and an associated threshold corresponding to a maximum number of identifiers in that list, wherein each identifier identifies a corresponding region of the memory that had been allocated for a process but that is currently not required by any of the one or more processes, and wherein the size of a region of the memory identified by an identifier of a list equals the size value associated with that list.

Abstract: Methods and systems are disclosed for reduced coupling between digital signal lines. For disclosed embodiments, return-to-zero signaling is dynamically blocked so that high logic levels remain high through entire clock cycles where the next data to be output is also at high logic levels. The dynamically blocked return-to-zero signaling reduces capacitive coupling between digital signal lines, such as clock and data signal lines, that are in close proximity to each other by reducing current flow that would otherwise occur with return-to-zero signaling. The dynamically blocked return-to-zero signaling can be used in a wide variety of environments and implementations.

Abstract: A surface mount semiconductor device having external contact elements exposed in a ball grid array (BGA) at its external active face for mechanical and electrical connection to an external support and a semiconductor die connected electrically internally with the external contact elements. A reinforcement layer of electrically insulating material extends between and surrounds laterally peripheral contact elements of the BGA. The reinforcement layer extends to from about thirty percent (30%) to about fifty percent (50%) of the height of the peripheral contact elements at the active face.

Abstract: An electronic apparatus includes a semiconductor substrate, a device structure supported by the semiconductor substrate, and a guard ring surrounding the device structure. The guard ring includes a plurality of conductive structures spaced apart from one another, supported by the semiconductor substrate, and coupled to a voltage source to establish an operating voltage for the guard ring.

Abstract: A method for forming a split gate device includes forming a first sidewall of a first conductive gate layer, wherein the semiconductor layer includes a tunnel region laterally adjacent the first sidewall, forming a dielectric layer along the first sidewall to provide for increased thickness of a gap spacer, forming a charge storage layer over a portion of a top surface of the first conductive layer and over the tunnel region, and forming a second conductive gate layer over the charge storage layer.

Abstract: A method of assembling a semiconductor device includes providing a substrate having an array of substrate elements linked by substrate corner elements and separated by slots extending between the corner elements. Semiconductor dies are positioned on the substrate elements. A cap, frame and contact structure is provided that has a corresponding array of caps supported by corner legs linking the caps to frame corner elements, frame elements linking the frame corner elements, and sets of electrical contact elements supported by the frame elements. The cap, frame and contact structure is fitted on the substrate with the caps extending over corresponding dies, the frame corner elements extending over the substrate corner elements, and the sets of electrical contact elements disposed in the slots. The dies are connected electrically with the electrical contact elements and the assembly is encapsulated and singulated. Singulating removes the frame elements.

Abstract: An approach is provided where incoming packets are received at a data plane and header fields are extracted from the incoming packet. Flows from a flow data store are matched with the extracted header fields from the incoming packet. Packet descriptor data associated with the incoming packet is marked in the selected incoming packet forming a marked ingress packet with marking performed when the matching fails. The marked ingress packet is forwarded to a control plane that retrieves flow-related data related to the marked ingress packet and updates the marked packet descriptor data using the retrieved flow-related data, thereby forming an updated marked packet. The control plane passes the updated marked packet back to the data plane for further processing to update the flow data stored in the flow data store.

Abstract: A receiver and a method for equalizing signals, the method includes: receiving input signals; sampling the input signals to provide oversampled samples; processing the oversampled samples to provide symbol spaced samples and to provide fractionally spaced samples that represent the oversampled samples; calculating taps of a fractionally spaced equalizer based on the symbol spaced samples; feeding the taps to the fractionally spaced equalizer; and filtering the fractionally spaced samples by the fractionally spaced equalizer to provide equalized samples.

Abstract: A lead frame for assembling a semiconductor device has a die pad surrounded by lead fingers. Each of the lead fingers has a proximal end close to but spaced from an edge of the die pad and a distal end farther from the die pad. A semiconductor die is attached to a surface of the die pad. The die has die bonding pads on its upper surface that are electrically connected to the proximal ends of the lead fingers with bond wires. An encapsulation material covers the bond wires, semiconductor die and the proximal ends of the lead fingers. Prior to assembly, hot spots of the die are determined and the lead fingers closest to the hot spots are selected to project closer to the die than the other lead fingers. These longer lead fingers assist in dissipating the heat at the die hot spot.