Abstract: A memory device that accurately tracks memory operations includes a vertical loopback for tracking a sense clock signal to a row address decoder, and read and write reference bit lines in a reference column that include loopbacks for vertically tracking a selected bit line during read and write operations. Preferably the widths of word lines and a sense line are equal to enable the sense line to horizontally track any selected word line. The memory device also includes tri-state input/output (I/O) latches to latch sense amplifier outputs. A drive circuit of the tri-state I/O latch is disabled when the output is available at the corresponding sense amplifier and enabled when the output is latched by the latch circuit.

Abstract: A relaxation oscillator for generating an output clock signal includes an RC circuit, a self-biased comparator stage, and a logic circuit. The RC circuit generates first and second comparator input signals that are provided to the self-biased comparator stage. The self-biased comparator stage includes first and second input stages and a voltage reference circuit. Each of the first and second input stages in conjunction with the voltage reference circuit forms a comparator, i.e., first and second comparators corresponding to the first and second input stages, respectively. The self-biased comparator stage generates first and second comparator output signals, based on the first and second comparator input signals. The first and second comparator output signals are provided to the logic circuit that generates the output clock signal.

Abstract: A multimode rake receiver comprise a common antenna interface, arranged to at least receive in a first mode a first CDMA radio channel carrying information encoded according to a first baseband modulation standard and to receive in a second mode a second CDMA radio channel carrying information encoded according to a second baseband modulation standard; and a common signal processing path, at least arranged to process in the first mode the first CDMA radio channel and in the second mode the second CDMA radio channel, wherein the common signal path comprises a common descrambling and de-spreading unit and a common hybrid code generating unit arranged to provide to the common descrambling and de-spreading unit chip codes applicable in the first mode to the first CDMA radio channel and in the second mode to the second CDMA radio channel.

Abstract: A small form factor near chip scale package is provided that includes input/output contacts not only along the periphery of the package, but also along the package bottom area. Embodiments provide these additional contacts through use of an array lead frame coupled to under die signal contacts through the use of flip chip bonding techniques. The array lead frame contacts are electrically isolated through the use of a partial sawing process performed during package singulation.

Abstract: A memory device comprising a memory controller and a homogeneous memory accessible by the memory controller, wherein the homogeneous memory is divided by the memory controller in a first memory partition and a second memory partition, wherein the first memory partition is allocated to a first type of information comprising user data and ECC data that are arranged interleaved with the user data, and wherein the second memory partition is allocated to a second type of information comprising further user data.

Abstract: A semiconductor device includes a semiconductor substrate and a plurality of clock drivers, wherein the plurality of clock drivers comprises substantially all clock drivers of the semiconductor device, and an interconnect region over the semiconductor substrate, wherein the interconnect region comprises a plurality of heat spreaders, wherein at least 25% of the plurality of clock drivers have a corresponding heat spreader of the plurality of heat spreaders. Each corresponding heat spreader of the plurality of heat spreaders covers at least 50% of a transistor within a corresponding clock driver of the plurality of clock drivers and extends across at least 70% of a perimeter of the transistor within the corresponding clock driver.

Abstract: The invention pertains to a latch circuit comprising a sensing arrangement with one or more sensing transistors adapted to sense an input signal and to provide a first signal based on the sensed input signal, and a sensing arrangement switch device connected or connectable to a first current source, the sensing arrangement switch device being adapted to switch on or off a current to the one or more sensing transistors based on a first clock signal.

Abstract: An electric device with vias that include dielectric structures to prevent conductive material in the vias from electrically connecting conductive structures on a top of the vias with conductive structures on the bottom of the vias. The dielectric structures are formed in selected vias where other vias do not include the dielectric structures.

Abstract: A stacked semiconductor device includes a first and a second semiconductor device. A first major surface of each of the first and second devices which includes the active circuitry directly face each other. The first major surface of each of the devices includes a beveled edge on at least one edge, and a probe pad which extends onto the beveled edge. A first opening is located between the beveled edges of the first and second devices on a vertical side of the stacked semiconductor device.

Abstract: A memory controller (16) is used in a system (10) having a main memory (22) and a set of non-volatile memories (26, 32, 38, 44). Each non-volatile memory comprises a plurality of sectors (S0-S28), pages, or other memory unit types. A command is received to write data to the set of non-volatile memories (26, 32, 38, 44). Within the data is identified a grouping of the data that is for writing to sectors in the set of non-volatile memories in which each non-volatile memory of the set of non-volatile memories is to be written and each sector to be written has a corresponding location to be written in all of the other non-volatile memories. Corresponding locations are locations that are in the same location in the sequential order. The grouping of data is written into the set of the non-volatile memories to result in the writing in the non-volatile memories occurring contemporaneously.

Abstract: A memory management unit comprises register and control logic and arranged to support a microprocessor controller unit accessing physical address space via an address bus wherein the microprocessor controller unit comprises a program counter having a first address size, the memory management unit wherein the register and control logic comprises a register having a second address size greater than the first address size and arranged to provide an extended address bus between the microprocessor controller unit and physical address space.

Abstract: A multiple time programmable nonvolatile memory device having a single polysilicon memory cell includes a select transistor and a bitcell transistor. The bitcell transistor has asymmetrically configured source, drain, and channel regions including asymmetrically configured source-body and drain-body junctions. Compared with the drain-body junction, the impurity concentration gradient of the source-body junction is more gradual, which may significantly improve program disturb immunity. The bitcell transistor gate may be connected to an electrode of a coupling capacitor, but may be otherwise floating or Ohmically isolated. The floating gate of the bitcell is protected by a dielectric layer for potentially improved data retention.

Abstract: A first implant is performed into a substrate to form a well in which a plurality of transistors will be formed. Each transistor of a first subset of the plurality of transistors to be formed has a width that satisfies a predetermined width constraint and each transistor of a second subset has a width that does not satisfy the constraint. A second implant is performed at locations in the well in which transistors of the first subset will be formed and not at locations in the well in which transistors of the second subset will be formed. The transistors are formed, wherein a channel region of each transistor of the first subset is formed in a portion of the substrate which received the second implant and a channel region of each transistor of the second subset is formed in a portion of the substrate which did not receive the second implant.

Abstract: Systems and methods for amplitude loop control for oscillators. In some embodiments, an electronic circuit may include oscillator circuitry configured to produce a periodic signal, and control circuitry operably coupled to the oscillator circuitry, the control circuitry including switched capacitor circuitry configured to determine a difference between maximum and minimum peak voltage values of the periodic signal, the control circuit configured to control a voltage amplitude of the periodic signal based upon the difference. In other embodiments, a method may include receiving a clock signal from a clock generator, determining, using a switched capacitor circuit, a first peak voltage value of the clock signal, determining, using the switched capacitor circuit, a second peak voltage value of the clock signal, and controlling a bias current applied to the clock generator based upon a difference between the first and second peak voltage values.

Abstract: A method for making a semiconductor device comprises forming an electrical interconnect layer, forming a first dielectric layer over the interconnect layer, forming an opening in the first dielectric layer over a first electrical interconnect of the interconnect layer, forming an aluminum layer over the first dielectric layer, etching the aluminum layer to form an aluminum die pad, forming a second dielectric layer over the aluminum die pad and the first dielectric layer, and forming a conductive via through the first and second dielectric layers to contact a second electrical interconnect of the interconnect layer.

Abstract: A system and method for determining power leakage of an electronic circuit design that includes a plurality of digital logic elements, using an electronic design automation (EDA) tool that includes a processor and an automatic test pattern generation (ATPG) tool for generating multiple sets of input value strings. The ATPG tool generates test patterns that include input value strings for simulating each digital logic element of the circuit design independently. A mapping between generated output values and corresponding input values is stored in a look up table (LUT). Thereafter, the ATPG tool generates test patterns that include input value strings for simulating the real-time behavior of the circuit design. The processor determines power leakage of the circuit design based on probability of occurrence of each unique input value string at the input of each digital logic element and corresponding predetermined power leakage values.

Abstract: A device comprising a substrate, an integrated circuit (IC) die attached to the substrate on one side, a plurality of contact pads on an active side of the IC die, a plurality of thermally and electrically conductive legs, each of the legs attached to a respective one of the contact pads, and an encapsulating material formed around the substrate, the IC die, and a portion of the legs. A contact end of each of the legs is exposed, and one of the contact ends conducts a signal from a transistor in the IC die.

Abstract: Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.

Abstract: A bipolar transistor comprises at least first and second connected emitter-base (EB) junctions having, respectively, different first and second EB junction depths, and a buried layer (BL) collector having a greater third depth. The emitters and bases corresponding to the different EB junctions are provided during a chain implant. An isolation region overlies the second EB junction location thereby providing its shallower EB junction depth. The BL collector does not underlie the first EB junction and is laterally spaced therefrom by a variable amount to facilitate adjusting the transistor's properties. In other embodiments, the BL collector can underlie at least a portion of the second EB junction. Regions of opposite conductivity type over-lie and under-lie the BL collector, which is relatively lightly doped, thereby preserving the breakdown voltage. The transistor can be readily “tuned” by mask adjustments alone to meet various device requirements.

Abstract: In one or more embodiments, one or more methods, processes, and/or systems described can determine stress failures in interconnect segments of integrated circuit designs and correct those failure via modifying the interconnect segments of the integrated circuit designs with one or more additions to the interconnect segments of the integrated circuit designs. Potentials can be received from a simulation, and one or more failures of an interconnect segment can be determined via the potentials from the simulation. For example, a failure can be determined via a comparison with a potential from the simulation and a critical potential. An interconnect segment can be modified with a stub such that a comparison with a potential from the simulation and a critical potential to provide a non-failing, modified interconnect segment.