Abstract: A system for generating a clock signal includes a phase-locked loop (PLL) and a voltage storage circuit. The PLL includes a voltage-controlled oscillator (VCO) that generates a clock signal based on a control voltage. The voltage storage circuit includes a unity-gain amplifier (UGA) and first, second and third switches. The first switch connects an input terminal of the UGA and an input of the VCO to sample the control voltage before the PLL transitions from RUN mode to STOP mode. The second switch connects the input and output terminals of the UGA to store the sampled control voltage when the PLL is in STOP mode. The third switch connects the output terminal of the UGA to the input terminal of a low pass filter (LPF) to provide the stored control voltage to the LPF when the PLL transitions from the STOP mode to the RUN mode.

Abstract: A power MOSFET includes a semiconductor substrate with an upper surface, a cavity of a first depth in the substrate whose sidewall extends to the upper surface, a dielectric liner in the cavity, a gate conductor within the dielectric liner extending to or above the upper surface, body region(s) within the substrate of a second depth, separated from the gate conductor in a lower cavity region by first portion(s) of the dielectric liner of a first thickness, and source region(s) within the body region(s) extending to a third depth that is less than the second depth. The source region(s) are separated from the gate conductor by a second portion of the dielectric liner of a second thickness at least in part greater than the first thickness. The dielectric liner has a protrusion extending laterally into the gate conductor away from the body region(s) at or less than the third depth.

Abstract: Embodiments of antennas and radio frequency (RF) modules include a substrate, a first antenna arm coupled to the substrate, and a first conductive structure between a distal end of the first antenna arm and a bottom surface of the substrate. An embodiment of a system includes a first substrate, a first conductive structure on a top surface of the first substrate, and an antenna coupled to the top surface of the first substrate. The antenna includes a second substrate, a first antenna arm coupled to the second substrate, and a second conductive structure having a proximal end and a distal end. The proximal end of the second conductive structure is coupled to a distal end of the first antenna arm, and the distal end of the second conductive structure extends to a bottom surface of the second substrate and is coupled to the first conductive structure on the first substrate.

Abstract: An approach is provided in which an enhanced routing module creates connection objects on a double patterning layout that are correct-by-construction and do not require a semiconductor fabrication stitching process. The enhanced routing module efficiently tracks accumulated mask selection constraints, during maze expansion, when the enhanced routing module traverses possible connection routes from a source grid point to a target grid point. In turn, the enhanced routing module avoids grid points that impose mask selection constraints that are incompatible with existing mask selection constraints of the possible connection routes. As a result, a connection object created by any one of the possible connection routes can be assigned to a specific mask, thus avoiding stitching process requirements from a semiconductor fabrication facility.

Abstract: A system for reducing leakage power of an electronic circuit design, where the circuit design includes multiple timing paths, each timing path made up of multiple cells, using an electronic design automation (EDA) tool. The EDA tool includes a processor that chooses a first replacement cell for replacing a first cell in a first timing path when timing slack is not available in the first path, where a width and threshold voltage of the first replacement cell are greater than a width and threshold voltage of the first cell. The processor then replaces the first cell with the first replacement cell when the overall power consumption of the first replacement cell is less than that of the first cell, and when the timing slack is available for replacing the first cell with the first replacement cell.

Abstract: A semiconductor memory device comprises a memory controller, and an array of memory cells coupled to communicate with the memory controller. The memory controller is configured to perform a first soft program operation using first soft program voltages and a first soft program verify level, and determine whether a first charge trapping threshold has been reached. When the first charge trapping threshold has been reached, a second soft program operation is performed using second soft program voltages and a second soft program verify level.

Abstract: A standard cell for a semiconductor device has first and second opposing boundaries and third and fourth opposite boundaries, and includes first and second active regions formed in a semiconductor substrate. The first and second active regions are a first predetermined distance (a) from the first and second boundaries, respectively. A gate electrode is formed over the first and second active regions. First and second dummy diffusions layers are formed along the third boundary and are the first predetermined distance (a) from the first and second boundaries and a second predetermined distance (b) from the first and second active regions, respectively. Third and fourth dummy diffusions layers are formed along the fourth boundary and are the first predetermined distance (a) from the first and second boundaries and a third predetermined distance (b?) from the first and second active regions, respectively.

Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Abstract: A processing apparatus, comprising at least a first processing unit and a second processing unit, is proposed. The first processing unit comprises a set of first stateful elements, the second processing unit comprises a set of second stateful elements. A set of synchronization data lines may connect the first stateful elements to the second stateful elements in a pairwise manner. A control unit may control the first processing unit, the second processing unit and the synchronization data lines so as to copy the states of the first stateful elements in parallel via the synchronization data lines to the second stateful elements in response to a synchronization request. A method of synchronizing the processing units is also proposed.

Abstract: An integrated circuit device comprises at least one connectivity identification module. The at least one connectivity identification module is arranged to determine an initial sensed state of at least one external signal path of the integrated circuit device, cause the at least one external signal path to be pulled towards an opposing state to the initial sensed state therefor, determine a new sensed state of the at least one external signal path of the integrated circuit device, and identify a presence of a broken connection within the at least one external signal path, if the new sensed state of the at least one external signal path does not match the initial sensed state of the at least one external signal path.

Abstract: A semiconductor device includes a parasitic silicon-controlled rectifier (SCR) and a first transistor. The parasitic SCR includes a parasitic pnp bipolar junction transistor (BJT) and a parasitic npn BJT. The first transistor is coupled between a first power supply node and an emitter of the parasitic pnp BJT. The first transistor includes a first terminal coupled to the first power supply node, a second terminal coupled to the emitter of the parasitic pnp BJT, and a control terminal. The first transistor is not positioned between a base of the pnp BJT and the first power supply node. The first transistor limits current conducted by the parasitic pnp BJT following a single-event latch-up (SEL) event.

Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Abstract: A signalling circuit for a signal channel of a communication network comprises a communication network terminal connectable to the signal channel and to a voltage supply; an input terminal connectable to receive a transmit signal; a driver device comprising a first driver terminal connected to the communication network terminal, a second driver terminal connected to ground, and a driver control terminal connected to the input terminal; wherein the driver device is arranged to connect the communication network terminal to ground in response to a transition from a low to a high voltage driver control signal state of a driver control signal received at the driver control terminal.

Abstract: A method and apparatus for forming a backside contact, electrical and/or thermal, for die encapsulated in a semiconductor device package are provided. Die of varying thicknesses can be accommodated within the semiconductor device package. Embodiments of the present invention provide a conductive pedestal coupled to a backside contact of a die, where the coupling is performed prior to encapsulating the die within the package. In addition, conductive pedestals coupled to varying die within a semiconductor device package are of such a thickness that each conductive pedestal can be exposed on the back side of the package without exposing or damaging the backside of any encapsulated die. Embodiments of the present invention provide for the conductive pedestals being made of electrically or thermally conductive material and coupled to the device die contact using an electrically and/or thermally conductive adhesive.

Abstract: A semiconductor device includes a package substrate having a plurality of conductive elements, each of the conductive elements including a conductive trace and a bond finger positioned at an end of the conductive trace. The bond fingers can be arranged on the package substrate in at least three groups. A first group of the three groups can include a first number of the bond fingers. A third group of the three groups can include a third number of the bond fingers. A second group of the three groups can include an intermediate number of the bond fingers. The intermediate number is between the first and the third numbers. Spacing between the conductive elements along the length of the conductive elements is approximately the same.

Abstract: A data processor is disclosed that accesses its local memory by routing requests through a data path that is external the data processor. A reservation/decoration controller implements specialized handling associated with a received request to access local memory. In addition to implementing special handling, a memory controller that is associated with the reservation/decoration controller routes a corresponding access request back to the data processor core to access its local memory.

Abstract: A packaged semiconductor device includes a package substrate, a semiconductor die on the package substrate, an encapsulant over the semiconductor die and package substrate, and a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion. The encapsulant includes an opening within a perimeter of the semiconductor die. The bottom surface of the pedestal portion of the heat spreader faces the top surface of the semiconductor die, wherein a first portion of the opening and at least a portion of the encapsulant is between the bottom surface of the pedestal portion and the semiconductor die.

Abstract: A microprocessor has a low-power mode and a non-low power mode. The microprocessor includes a processor core for executing instructions provided to the microprocessor and a clock providing a clock signal, which in the non-low power mode has a first frequency and in the low power mode has a second frequency lower than the first frequency. A hardware timer is present, for scheduling an execution of an event by the microprocessor at a future point in time. The hardware timer is connected to the clock for determining a period of time between a current point in time and a point in time the event based on a number of clock cycles of the clock signal. A timer controller can determine, when the data processing system switches from the low power mode to the non-low power mode, a number of clock cycles of a clock signal with the first frequency that corresponds to a low-power mode period during which the microprocessor has been in the low power mode and adjusting the hardware timer based on the determined number.

Abstract: A method includes providing a silicon-containing die and providing a heat sink having a palladium layer over a first surface of the heat sink. A first gold layer is located over one of a first surface of the die or the palladium layer. The silicon-containing die is bonded to the heat sink, where bonding includes joining the silicon-containing die and the heat sink such that the first gold layer and the palladium layer are between the first surface of the silicon-containing die and the first surface of the heat sink, and heating the first gold layer and the palladium layer to form a die attach layer between the first surface of the silicon-containing die and the first surface of the heat sink, the die attach layer comprising a gold interface layer having a plurality of intermetallic precipitates, each of the plurality of intermetallic precipitates comprising palladium, gold, and silicon.

Abstract: An integrated circuit that includes a controller for defining a test path that comprises at least one test access port out of multiple test access ports characterized by further comprising at least one multi-bit bypass logic for bypassing at least one of the multiple test access ports and for affecting a length of the test path. Conveniently, the length of the test path remains substantially fixed regardless of changes in a configuration of the test path. A method for testing an integrated circuit, the method includes a stage of propagating test signals across a test path. Whereas the method is characterized by a stage of defining a configuration of the test path, whereas the test path comprises at least one components out of at least one test access port and at least one bypass access logic; whereas the at least one multi-bit bypass logic bypass at least one of the multiple test access ports and affect a length of the test path.