Abstract: A gasket of a data processing device controls the number of released storage locations of a buffer where read and write access requests are stored so that more read access requests can be stored without a corresponding increase in the amount of space at the buffer to store write access requests. An interface of the gasket accepts new access requests from one or more requesting modules only when a number of released storage locations at a buffer associated with the interface (referred to as an outbound buffer) is above a threshold number. As long as the number of stored access requests at the outbound buffer are less than a threshold amount, a buffer location can be immediately released. In addition, the gasket is configured to issue read access requests from the outbound buffer without regard to whether the inbound buffer has space available.

Abstract: Methods are provided for forming a device that includes merged vertical and lateral transistors with collector regions of a first conductivity type between upper and lower base regions of opposite conductivity type that are Ohmically coupled via intermediate regions of the same conductivity type and to the base contact. The emitter is provided in the upper base region and the collector contact is provided in outlying sinker regions extending to the thin collector regions and an underlying buried layer. As the collector voltage increases part of the thin collector regions become depleted of carriers from the top by the upper and from the bottom by the lower base regions. This clamps the collector regions' voltage well below the breakdown voltage of the PN junction formed between the buried layer and the lower base region. The gain and Early Voltage are increased and decoupled and a higher breakdown voltage is obtained.

Abstract: A customized shield plate field effect transistor (FET) includes a semiconductor layer, a gate dielectric, a gate electrode, and at least one customized shield plate. The shield plate includes a conductive layer overlying a portion of the gate electrode, one of the gate electrode sidewalls, and a portion of the substrate adjacent to the sidewall. The shield plate defines a customized shield plate edge at its lateral boundary. A distance between the customized shield plate edge and the sidewall of the gate electrode varies along a length of the sidewall. The customized shield plate edge may form triangular, curved, and other shaped shield plate elements. The configuration of the customized shield plate edge may reduce the area of the resulting capacitor and thereby achieve lower parasitic capacitance associated with the FET. The FET may be implemented as a lateral diffused MOS (LDMOS) transistor suitable for high power radio frequency applications.

Abstract: A sensor package comprises a composite structure in which the composite structure includes a first electronic component having first bond pads, the first electronic component exhibiting a first surface area. A mold material encapsulates the first electronic component to produce the composite structure, and the composite structure exhibits a second surface area that is greater than the first surface area. The sensor package further comprises a second electronic component having a top side and a bottom side opposing the top side. The top side includes second bond pads, and the bottom side is bonded to an outer surface of the composite structure to form a stacked structure. Electrical interconnects are attached between corresponding ones of the first bond pads and the second bond pads.

Abstract: An error correcting device is provided that has an input connectable to receive one or more data units, an error detection module arranged to identify a presence of one or more errors in a received data unit of the one or more data units and to provide an error detection signal for the received data unit, an error correction module arranged to perform an error correction processing on the received data unit and provide a corrected data unit, and a correction evaluation module arranged to perform a comparison of the received data unit with the corrected data unit and to generate a correction error signal depending on a result of the comparison and the error detection signal.

Abstract: A system for processing data flows comprises a classifier, a first processor, a first checking unit, a calculator, and a second processor. The classifier is designed for classifying of data channels into a first and a second class of data channels. The first processor is designed for processing of a second sub-class of data channels. The calculator is designed for calculating information for the second class data channels from processing results of the first processor. The second processor is designed for processing the second class data channels using information calculated by the calculator. Each of network equipment for an uplink connection, and of user equipment for a downlink connection or batch processing of format detection comprises such a system for processing data flows.

Abstract: A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.

Abstract: A sensor circuit performs a method for sensing on-chip characteristics. The method includes generating a first voltage using a drive current through a first set of transistors that are operating in saturation mode and generating a second voltage using subthreshold leakage current from a second set of transistors that are in subthreshold mode. The method further includes comparing the second voltage to the first voltage to sense an on-chip characteristic. The sensed on-chip characteristic can be temperature and/or gate length variation.

Abstract: A voltage translation circuit (116) provides an output analog voltage signal that has a translated voltage of the voltage of an input analog voltage signal over a range of values of the input analog voltage signal. The voltage translation circuit includes an input stage (202) having a circuit node and an input transistor (210) coupled between the circuit node and a power supply terminal, wherein a gate of the input transistor is coupled to receive the input analog voltage signal; a current path circuit (204) in parallel with the input transistor, wherein the current path includes a first transistor coupled between the circuit node and the power supply terminal; and a circuit coupled to provide a variable body bias voltage to a body of the first transistor.

Abstract: A capacitance-to-voltage interface circuit is utilized to obtain a voltage corresponding to a detected capacitance differential, which may be associated with the operation of a capacitive sensing cell. The interface circuit includes a capacitive sensing cell, an operational amplifier adapted for selective coupling to the capacitive sensing cell, a feedback capacitor for the operational amplifier, a load capacitor for the operational amplifier, and a switching architecture associated with the capacitive sensing cell, the operational amplifier, the feedback capacitor, and the load capacitor. During use, the switching architecture reconfigures the capacitance-to-voltage interface circuit for operation in a plurality of different phases. The different operational phases enable the single operational amplifier to be used for both capacitance-to-voltage conversion and voltage amplification.

Abstract: A data processing system having a first processor, a second processor, a local memory of the second processor, and a built-in self-test (BIST) controller of the second processor which performs BIST memory accesses on the local memory of the second processor and which includes a random value generator is provided. The system can perform a method including executing a secure code sequence by the first processor and performing, by the BIST controller of the second processor, BIST memory accesses to the local memory of the second processor in response to the random value generator. Performing the BIST memory accesses is performed concurrently with executing the secure code sequence.

Abstract: A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer (211) and a dielectric layer (209) disposed between the substrate and the semiconductor layer, (b) creating a trench (210) which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure (221) which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer (223) which comprises a second material and which is disposed on the bottom of the trench.

Abstract: A package substrate has a die mounted on a first side. One or more inner solder pads are on an inner portion of a second side. A perimeter of the inner portion is aligned with a perimeter of the die. The one or more inner solder pads are the only solder pads on the inner portion. The one or more inner solder pads number no more than five. A plurality of outer solder pads are on an outer portion of the second side. An average of areas of the one or more inner solder pads is at least five times an average of areas of the one or more inner solder pads. The plurality of outer solder ball pads are for receiving solder ball balls. The outer portion is spaced from the perimeter of the inner portion. The outer portion and the inner portion are coplanar.

Abstract: A method of assembling Redistributed Chip Package (RCP) semiconductor devices. An active die structure is encapsulated in a molding compound with internal electrical contacts of the active die structure positioned at an active face of an encapsulation layer. A dummy die structure is positioned at a back face of the encapsulation layer. A redistribution layer is formed at an active face of the encapsulation layer. The redistribution layer includes a layer of insulating material and redistribution electrical interconnections. The insulating material is built up with grooves along saw streets. External electrical contacts exposed at a surface of the redistribution layer are connected with the redistribution electrical interconnections. The dummy die structure is removed and then the semiconductor devices are singulated.

Abstract: A semiconductor device includes CMP dummy tiles (36) that are converted to active tiles by forming well regions (42) at a top surface of the dummy tiles, forming silicide (52) on top of the well regions, and forming a metal interconnect structure (72, 82) in contact with the silicided well tie regions for electrically connecting the dummy tiles to a predetermined supply voltage to provide latch-up protection.

Abstract: An integrated circuit device comprising at least one voltage supply module arranged to receive at an input thereof at least one control signal and to provide at an output thereof a voltage signal in accordance with the received at least one control signal, and at least one control module comprising at least one feedback loop between the output of the at least one voltage supply module and the input of the at least one voltage supply module, and arranged to generate the at least one control signal based at least partly on the voltage level of the voltage signal output by the at least one voltage supply module. The at least one control module is further arranged to receive at an input thereof at least one instantaneous indication of a load current at the output of the at least one voltage supply module, and apply a compensation to the at least one control signal provided to the at least one voltage supply module based at least partly on the received at least one indication of the load current.

Abstract: A data processing system includes a first master having a cache, a second master, a memory operably coupled to the first master and the second master via a system interconnect. The cache includes a cache controller which implements a set of cache coherency states for data units of the cache. The cache coherency states include an invalid state; an unmodified non-coherent state indicating that data in a data unit of the cache has not been modified and is not guaranteed to be coherent with data in at least one other storage device of the data processing system, and an unmodified coherent state indicating that the data of the data unit has not been modified and is coherent with data in the at least one other storage device of the data processing system.

Abstract: A power management circuit for managing power supplied to an electronic circuit by a core power supply. The electronic circuit includes digital and analog circuit domains and operates in POWER-ON, RUN and STANDBY modes. The power management circuit includes a master state machine that exchanges a handshake signal with the analog circuit domain to monitor the modes of operation and generates first and second configuration signals. The power management circuit enables and disables the analog circuit domain based on the first and second configuration signals. A switch connected to the core power supply and the digital circuit module enables and disables the digital circuit domain based on the second configuration signal.

Abstract: A method of developing a tracing solution for the execution of blocks of computer code. The method comprises representing each block of code of an initial tracing solution as a vertex on an initial tracing solution graph. The vertices on the initial tracing solution graph constitute an initial set of vertices. The method further comprises checking whether there are any redundant vertices in the initial set of vertices. Redundant vertices are vertices not needed for a tracing solution. If there are any redundant vertices in the initial set of vertices, one or more of the redundant vertices is eliminated from the initial set of vertices, thereby deriving a reduced set of vertices.

Abstract: A switcher system or circuit and corresponding methods provide dynamic voltage scaling. One embodiment of an apparatus includes: a switcher controller configured to monitor a signal from a processor for a first state, determine a time that the signal is in the first state, and provide an adjustment signal based on the time, and a power supply coupled to the adjustment signal and configured to provide a variable supply voltage to the processor core, the variable supply voltage controlled by the adjustment signal after the determining a time.