Abstract: In response to a reset condition, the state of a steady-state signal at an I/O pin of the serial communication port of an integrated circuit die is determined. The serial communication port is configured to support one of the plurality of serial communication protocols based upon the detected steady-state condition.

Abstract: A first dielectric layer is formed in an NVM region and a logic region. A charge storage layer is formed over the first dielectric layer and is patterned to form a dummy gate in the logic region and a charge storage structure in the NVM region. A second dielectric layer is formed in the NVM and logic regions which surrounds the charge storage structure and dummy gate. The second dielectric layer is removed from the NVM region while protecting the second dielectric layer in the logic region. The dummy gate is removed, resulting in an opening. A third dielectric layer is formed over the charge storage structure and within the opening, and a gate layer is formed over the third dielectric layer and within the opening, wherein the gate layer forms a control gate layer in the NVM region and the gate layer within the opening forms a logic gate.

Abstract: A system for monitoring and controlling the power of a Radio Frequency (RF) signal in a short-range RF transmitter. An RF signal-generation unit generates the RF signal. A power amplifier amplifies the RF signal. An impedance-matching network matches the output impedance of the power amplifier to input impedance of an antenna. One or more RF power monitors monitor the voltage amplitude of the RF signal at the output of at least one of the RF signal-generation unit, the power amplifier and the impedance-matching network. The one or more RF power monitors further generate at least one alarm signal, based on the voltage amplitude of the RF signal. A control unit modifies at least one operating parameter of at least one of the RF signal-generation unit and the power amplifier, based on the at least one alarm signal generated by the one or more RF power monitors.

Abstract: An integrated circuit comprises frequency generation circuitry for controlling a frequency source for use in an automotive radar system. The frequency generation circuitry comprises low-path modulation circuitry arranged to generate a first, low-path control signal for providing lower frequency modulation of the frequency source, the low-path modulation circuitry comprising a Phase Locked Loop (PLL) arranged to generate the low-path control signal for controlling the frequency source and a fractional-N divider located within a feedback loop of the PLL, and frequency pattern control module operably coupled to the fractional-N divider and arranged to control the fractional-N divider, by way of at least a first, lower frequency pattern control signal. The frequency generation circuitry further comprises high-path modulation circuitry arranged to generate a second, high-path control signal for providing higher frequency modulation of the frequency source.

Abstract: A semiconductor device includes a region in a semiconductor substrate having a top surface with a first charge storage layer on the top surface. A first conductive line is on the first charge storage layer. A second charge storage layer is on the top surface. A second conductive line is on the second charge storage layer. A third charge storage layer is on the top surface. A third conductive line is on the third charge storage layer. A fourth charge storage layer has a first side adjoining a first sidewall of the first conductive line and a second side adjoining a first sidewall of the second conductive line. A fifth charge storage layer has a first side adjoining a second sidewall of the second conductive line and a second side adjoining a first sidewall of the third conductive line. Source and drain regions are formed in the substrate on either side of the semiconductor device.

Abstract: A method for processing an image, the method comprising retrieving an image, encoding the image as a string of components, deriving an exponent for each component, deriving mantissas wherein at least an approximation of each component can be derived from the exponents and mantissas, and wherein each exponent indicates the number of bits in its accompanying mantissa, compressing at least the exponents, and storing the exponents and the mantissas in a memory. There is also provided a apparatus for processing an image.

Abstract: An integrated circuit including a degradation monitoring circuit. The degradation monitoring circuit includes a comparison circuit having a programmable delay element including an input coupled to a data node of a timing path and having an output to provide a delayed signal of a data signal of the data node that is delayed by a programmable amount. The comparison circuit includes a logic comparator that provides a logic comparison between a data signal of the data node and the output of the delay element. The monitoring circuit includes a sampling circuit that provides a sampled signal of the output of the logic comparator that is a sampled with respect to a clock signal of the clock signal line. The monitoring circuit includes a hold circuit that provides a signal indicative of a data signal of the data node transitioning within a predetermined time of an edge transition of a clock signal of the clock signal line.

Abstract: Methods of manufacturing a flat-pack no-lead microelectronic package (2100) coat exposed base metal at a cut end of a lead frame of the package with solder (1001). One method coats the exposed base metal with solder when the package is in a strip (200, 300). Another method coats the exposed base metal with solder after the package is singulated. As a result, all portions of leads of the package that may receive solder during mounting of the package to a printed circuit board are solder wettable. A solder wettable lead end (504) on the package facilitates formation of a solder fillet during mounting of the package.

Abstract: Semiconductor dies are mounted on a heat sink array frame structure. The heat sink array frame structure and the semiconductor dies are assembled together with an insulating substrate that has a corresponding array of apertures on an adhesive tape. The semiconductor dies are connected electrically with electrical contacts on the insulating substrate. The semiconductor dies, heat sinks and electrical connections to the contacts are encapsulated with a mold compound and then the encapsulated array is de-taped and singulated.

Abstract: A semiconductor trimming circuit includes parallel coupled PMOS devices coupled in parallel with parallel coupled NMOS devices and an additional pair of dummy NMOS devices. The dummy NMOS devices are coupled in parallel with the NMOS devices. A trimming circuit for an internal clock source may be formed with an array of such switches for selecting one or more trimming capacitors of the trimming circuit. Such an array has a low leakage current and permits good trimming linearity.

Abstract: A method for making a semiconductor device comprises forming an electrical interconnect layer, forming a first dielectric layer over the interconnect layer, forming an opening in the first dielectric layer over a first electrical interconnect of the interconnect layer, forming an aluminum layer over the first dielectric layer, etching the aluminum layer to form an aluminum die pad, forming a second dielectric layer over the aluminum die pad and the first dielectric layer, and forming a conductive via through the first and second dielectric layers to contact a second electrical interconnect of the interconnect layer.

Abstract: A first conductive layer and an underlying charge storage layer are patterned to form a control gate in an NVM region. A first dielectric layer and barrier layer are formed over the control gate. A sacrificial layer is formed over the barrier layer and planarized. A first patterned masking layer is formed over the sacrificial layer and control gate in the NVM region which defines a select gate location laterally adjacent the control gate in the NVM region. A second masking layer is formed in the logic region which defines a logic gate location. Exposed portions of the sacrificial layer are removed such that a first portion remains at the select gate location. A second dielectric layer is formed over the first portion and planarized to expose the first portion. The first portion is removed to result in an opening at the select gate location which exposes the barrier layer.

Abstract: A digital to analog converter including at least one current steering source and a master replica bias network. Each current steering source includes a data current source, two switches, two buffer devices, and two activation current sources. The switches are controlled by a data bit and its inverse for switching the source current between first and second control nodes. The buffer devices buffer the control nodes between corresponding output nodes. The activation current sources ensure that each buffer device remains active regardless of the state of the switches. The master replica bias network includes a replica buffer device coupled to a replica control node and a master buffer amplifier. The master buffer amplifier drives the first, second and replica buffer devices in parallel to maintain the first, second and replica control nodes at a common master control voltage to minimize noise and glitches at the output.

Abstract: Methods and systems are disclosed for erasing split-gate non-volatile memory (NVM) cells using select-gate erase voltages that are adjusted to reduce select-gate to control-gate break-down failures. The adjusted select-gate erase voltages provide bias voltages on the select-gates that are configured to have the same polarity as the control-gate erase voltages applied during erase operations and that are different from select-gate read voltages applied during read operations. Certain additional embodiments use discrete charge storage layers for the split-gate NVM cells and include split-gate NVM cells having gap dielectric layer thicknesses that are dependent upon control gate dielectric layer widths.

Abstract: A display controller including a pixel processor which processes working pixel data for each pixel of a frame, and which includes an overlap detector, a collision detector, and a construction processor. The overlap detector detects an overlap when any new pixel value of a new update region is within a region of a current update of the frame. The collision detector issues a correction request when at least one pixel within the overlap region has a begin pixel value prior to the current update that is different from an end pixel value provided by the current update, and when a new pixel value provided by the new update for the pixel is different from the end pixel value. The construction processor updates the working pixel data before the current update is completed using a new pixel value for each non-overlapping pixel.

Abstract: A layout tool partially replicates the layout of a base cell to determine the layout for a target cell. The base cell is information representing an arrangement of a set of transistors having an established layout. The target cell is information indicating the desired arrangement of another set of transistors. The layout tool identifies correspondences between subsets of the base cell transistors and subsets of the target cell transistors and replicates the layout of the identified base cell subsets to determine the layout for the identified target cell subsets. In addition, the layout tool can identify base cell subsets that closely match target cell subsets, but for which the layout cannot be exactly replicated because of obstructions in the target cell subsets. For such identified base cell subsets, the layout tool can determine a layout by adjusting the base cell subset layouts to avoid the obstructions.

Abstract: A method includes initializing a counter value of a hardware counter. The method further includes iteratively adjusting the counter value and storing an initialization value to a memory location using a memory address based on the counter value. The method also includes generating an interrupt request based on a comparison of the counter value to a waitpoint value concurrent with iteratively adjusting and storing. A memory device includes a memory array and an initialization module. The initialization module includes a counter, a register to store a waitpoint value, write logic configured to write an initialization value to a memory location of the memory array associated with a memory address that is based on a counter value of the counter, and interrupt logic configured to generate an interrupt request based on a comparison of the counter value of the counter to the waitpoint value.

Abstract: Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates coupled by through-substrate-vias (TSVs). An active device (AD) substrate has contacts on its upper portion. An isolator substrate is bonded to the AD substrate so that TSVs in the isolator substrate are coupled to the contacts on the AD substrate. An IPD substrate is bonded to the isolator substrate so that TSVs therein are coupled to an interconnect zone on the isolator substrate and/or TSVs therein. The IPDs of the IPD substrate are coupled by TSVs in the IPD and isolator substrates to devices in the AD substrate. The isolator substrate provides superior IPD to AD cross-talk attenuation while permitting each substrate to have small high aspect ratio TSVs, thus facilitating high circuit packing density and efficient manufacturing.

Abstract: An embodiment of an antenna includes a radiation frame and a planar inverted-F antenna (PIFA). The radiation frame has a frame shape that defines a central opening. The PIFA includes an antenna arm, a feed arm, and a shorting arm. A distal end of the shorting arm is conductively coupled with the radiation frame. The antenna may be coupled to a substrate of an RF module. The RF module may be included in a system that also includes a non-RF component that produces a signal for transmission. In such a system, the RF module is configured to receive the signal, convert the signal to an RF signal, and radiate the RF signal over an air interface.

Abstract: A method for making a semiconductor device is provided which comprises (a) creating a data set (301) which defines a set of tiles for a polysilicon deposition process; (b) deriving a polysilicon deposition mask set (311) from the data set, wherein the polysilicon deposition mask set includes a plurality of polysilicon tiles (303); (c) deriving an epitaxial growth mask set (321) from the data set, wherein the epitaxial growth mask set includes a plurality of epitaxial tiles (305); and (d) using the polysilicon deposition mask set and the epitaxial growth mask set to make a semiconductor device (331); wherein the epitaxial growth mask set is derived from the data set by using at least a portion of the tile pattern defined in the data set for at least a portion of the tile pattern defined in the epitaxial deposition mask set.