Abstract: A method and apparatus automatically controls the insertion of information flow data over a shared CPRI link (561) by providing a hardware control mechanism (504-509) at a local radio base station subsystem (501) connected in a CPRI daisy chain configuration between a downstream RE device (570) and an upstream REC device (560) for determining whether the control word being transmitted is sourced from a downstream device (e.g., forwarded data from a downstream RE device) or from the local device.

Abstract: A method includes forming a connection between a first metal layer and a second metal layer. The second metal layer is over the first metal layer. A via location for a first via between the first metal layer and the second metal layer is identified. Additional locations for first additional vias are determined. The first additional vias are determined to be necessary for stress migration issues. Additional locations necessary for second additional vias are determined. The second additional vias are determined to be necessary for electromigration issues. The first via and the one of the group consisting of (i) the first additional vias and second additional vias (ii) the first additional vias plus a number of vias sufficient for electromigration issues taking into account that the first additional vias, after taking into account the stress migration issues, still have an effective via number greater than zero.

Abstract: A method and apparatus may be used to evaluate a polynomial by initializing a multiply and accumulate feedback apparatus (260) comprising a multiplier stage (264) having an output coupled to an input of an accumulator stage (267) having an accumulator feedback output (269) selectively coupled to an input of the multiplier stage over a plurality of clock cycles; iteratively calculating a final working loop variable over an additional plurality of clock cycles; multiplying the final working loop variable z and a complex input vector x to compute a final multiplier value; and adding a least significant complex polynomial coefficient to the final multiplier value using the multiplier stage of the multiply and accumulate feedback apparatus to yield a result of the polynomial evaluation.

Abstract: A circuit arrangement comprises a plurality of current channels located in different die areas of a shared circuit die at least one of the plurality of current channels comprising a power device; at least one sense circuit connected to one or more of the different die areas and arranged to provide a sense current from sensing a current through a primary of the plurality of current channels comprising one of the different die areas. The at least one sense circuit comprises a compensation module arranged to provide a compensation current adapted to at least partly compensate a deviation of the sense current caused by crosstalk between the primary and one or more secondary of the plurality of current channels depending on one or more secondary currents flowing through the one or more secondary current channels; wherein the compensation module is arranged to provide the compensation current at least partly as a weighted sum of the one or more secondary currents.

Abstract: In one aspect, a disclosed method of fabricating a split gate memory device includes forming a gate dielectric layer overlying an channel region of a semiconductor substrate and forming an electrically conductive select gate overlying the gate dielectric layer. The method further includes forming a counter doping region in an upper region of the substrate. A proximal boundary of the counter doping region is laterally displaced from a proximal sidewall of the select gate. The method further includes forming a charge storage layer comprising a vertical portion adjacent to the proximal sidewall of the select gate and a lateral portion overlying the counter doping region and forming an electrically conductive control gate adjacent to the vertical portion of the charge storage layer and overlying the horizontal portion of the charge storage layer.

Abstract: A reference voltage loss monitoring circuit having a first and second reference node. The reference nodes are connected to a voltage reference. A first connection device is connects the first reference node to the second reference node, and includes a first diode to allow a current flowing from the first reference node to the reference ground node and not conversely. The first diode includes a first main transistor. A second connection device connects the second reference node to the first reference node, and includes a second diode to allow a current flowing from the second reference node to first reference node and not conversely. The second diode includes a second main transistor. Each of the first and second connection devices further includes a secondary transistor mirrored with the main transistor of the connection devices.

Abstract: An integrated circuit (IC) having a low leakage current mode of operation has a number of modules for running respective applications. The modules have respective cells and respective test scan chain elements. The IC also has a controller for configuring an active module to operate in a functional mode and a selected inactive module to operate in a low leakage current mode. Configuring the selected inactive module to operate in low leakage current mode includes enabling scan mode of the selected inactive module, and applying a low leakage vector of input signals from the controller to the cells of the inactive module using the scan chain. Functional data outputs of the inactive module are disabled during low leakage current mode. In the meantime, the active modules continue to operate in the functional mode.

Abstract: A method and apparatus for forming a backside contact, electrical and/or thermal, for die encapsulated in a semiconductor device package are provided. Die of varying thicknesses can be accommodated within the semiconductor device package. Embodiments of the present invention provide a conductive pedestal coupled to a backside contact of a die, where the coupling is performed prior to encapsulating the die within the package. In addition, conductive pedestals coupled to varying die within a semiconductor device package are of such a thickness that each conductive pedestal can be exposed on the back side of the package without exposing or damaging the backside of any encapsulated die. Embodiments of the present invention provide for the conductive pedestals being made of electrically or thermally conductive material and coupled to the device die contact using an electrically and/or thermally conductive adhesive.

Abstract: A tamper detector has input and output pins for connection to ends of a tamper detection circuit, and a corresponding set of linear feedback shift registers (LFSRs) timed by clock signals for generating pseudo-random coded detection signals as a function of seed values and of a generator polynomial defined by feedback taps. A comparator compares signals received from the detection circuit with the coded detection signals. A multiplexer provides the coded detection signal selectively from the LFSRs to the output pin and the comparator. A controller varies the seed values for different cycles of values of the pseudo-random coded detection signals. The controller also controls the generator polynomial and a frequency of the clock signals for different cycles of values of the pseudo-random coded detection signals.

Abstract: A technique for addressing single-event latch-up (SEL) in a semiconductor device includes determining a location of a parasitic silicon-controlled rectifier (SCR) in an integrated circuit design of the semiconductor device. In this case, the parasitic SCR includes a parasitic pnp bipolar junction transistor (BJT) and a parasitic npn BJT. The technique also includes incorporating a first transistor between a first power supply node and an emitter of the parasitic pnp BJT in the integrated circuit design. The first transistor includes a first terminal coupled to the first power supply node, a second terminal coupled to the emitter of the parasitic pnp BJT, and a control terminal. The first transistor is not positioned between a base of the pnp BJT and the first power supply node. The first transistor limits current conducted by the parasitic pnp bipolar junction transistor following an SEL.

Abstract: A data processing device with a power supply and data signal interface circuit has a switch for connecting an external line and an internal node. The power supply and data signal interface circuit also includes a controller for applying an enabling voltage to the switch enabling the switch to supply current between the external line and the internal node in the presence of power supply to the controller and in the absence of the overvoltage condition on the external line. The power supply and data signal interface circuit also includes a voltage reduction connection from the external line for applying a control voltage to the switch in the absence of power supply to the controller. The control voltage from the voltage reduction connection limits a voltage applied to the internal node through the switch in the presence of the overvoltage condition.

Abstract: A pressure sensor package is provided that reduces the occurrence of micro gaps between molding material and metal contacts that can store high-pressure air. The present invention provides this capability by reducing or eliminating interfaces between package molding material and metal contacts. In one embodiment, a control die is electrically coupled to a lead frame and then encapsulated in molding material, using a technique that forms a cavity over a portion of the control die. The cavity exposes contacts on the free surface of the control die that can be electrically coupled to a pressure sensor device using, for example, wire bonding techniques. In another embodiment, a region of a substrate can be encapsulated in molding material, using a technique that forms a cavity over a sub-portion of the substrate that includes contacts. A pressure sensor device can be electrically coupled to the exposed contacts.

Abstract: A memory controller implements flexible memory mapping for storage of data units in a memory. The memory controller logically partitions the memory into a plurality of blocks or block segments and manages the storage of data units among the plurality of blocks/block segments. The memory controller can operate in one of three modes: a monolithic mode whereby the memory is modeled as a plurality of blocks, whereby each block is treated as a “monolithic” block; a fragmented mode whereby the memory is modeled as a plurality of blocks segments of varying sizes; and a combined mode whereby the memory is initially partitioned into a plurality of equal-sized blocks, and whereby each block can be used as a monolithic block or a fragmented block comprising a plurality of block segments of different sizes, and wherein monolithic blocks can be converted to fragmented blocks and fragmented blocks can be converted back to monolithic blocks.

Abstract: A data processing system has a cache which receives both non-debug snoop requests and debug snoop requests for processing. The non-debug snoop requests are generated in response to transactions snooped from a system interconnect. Debug control circuitry that is coupled to the cache provides the debug snoop requests to the cache for processing. The debug snoop requests are generated in response to debug snoop commands from a debugger and without the use of the system interconnect. In one form snoop circuitry has a snoop request queue having a plurality of entries, each entry for storing a snoop request. A debug indicator corresponding to each snoop request indicates whether the snoop request is a debug snoop request or a non-debug snoop request.

Abstract: A flank wettable semiconductor device is assembled from a lead frame or substrate panel by at least partially undercutting the lead frame or substrate panel with a first cutting tool to expose a flank of the lead frame and applying a coating of tin or tin alloy to the exposed flank prior to singulating the lead frame or substrate panel into individual semiconductor devices. The method includes electrically interconnecting lead frame flanks associated with adjacent semiconductor devices before applying the coating of tin or tin alloy. The lead frame flanks may be electrically interconnected during wire bonding.

Abstract: A method of forming a transistor device includes forming a dummy gate stack structure over an SOI starting substrate, comprising a bulk layer, a global BOX layer over the bulk layer, and an SOI layer over the global BOX layer. Self-aligned trenches are formed completely through portions of the SOI layer and the global BOX layer at source and drain regions. Silicon is epitaxially regrown in the source and drain regions, with a local BOX layer re-established in the epitaxially regrown silicon, adjacent to the global BOX layer. A top surface of the local BOX layer is below a top surface of the global BOX layer. Embedded source and drain stressors are formed in the source and drain regions, adjacent a channel region. Silicide contacts are formed on the source and drain regions. The dummy gate stack structure is removed, and a final gate stack structure is formed.

Abstract: A pump system for inflating a tire of a motorized vehicle, comprises a pump unit. The pump unit has an outlet connectable to an inlet of the tire, for providing a fluid to the inside of the tire. A communication interface is communicatively connectable to a tire pressure monitoring system, TPMS, in the vehicle, for receiving from the TPMS data representing information for controlling the providing of fluid to the tire. A pump controller is connected to the pump unit and to the communication interface and can control the pump unit based on at least the information.

Abstract: An oscillator circuit generates a voltage signal. The magnitude of the voltage signal is measured and compared with predetermined upper and lower voltage signals by an internal test circuit. If the magnitude of the voltage signal is between the predetermined upper and lower voltage signals, then a pass test status signal is generated. If the magnitude of the voltage signal is not between the predetermined upper and lower voltage signals then a fail test status signal is generated.

Abstract: A non-volatile memory built-in self-trim mechanism is provided by which product reliability can be improved by minimizing drift of reference current used for accessing the non-volatile memory and for performing initial trimming of the reference current. Embodiments perform these tasks by using an analog-to-digital converter to provide a digital representation of the reference current (Iref) and then comparing that digital representation to a stored target range value for Iref and then adjusting a source of Iref accordingly. For a reference current generated by a NVM reference bitcell, program or erase pulses are applied to the reference cell as part of the trimming procedure. For a reference current generated by a bandgap-based circuit, the comparison results can be used to adjust the reference current circuit. In addition, environmental factors, such as temperature, can be used to adjust the measured value for the reference current or the target range value.

Abstract: A level shifter includes a latch supplied at a first voltage, and first and second series connections of first and second switch elements and first and second biased elements in series with first and second branches of the latch respectively. Third and fourth switch elements are connected in parallel with the first and second series connections respectively. The input signal, at a voltage different from the first voltage, activates the third or fourth switch element during a transition period after a change of state of the input signal one way or the other to change the state of the latch, and deactivates the third or fourth switch element and activates the first or second switch element to maintain the state of the latch during a stabilization period following the transition period. The transition periods are shortened, reducing current consumption and transfer delay times.