Abstract: A method of communicating between a mobile communication device including a power supply, and a base station. The mobile device has first and second alternative communication modes, the first communication mode having higher quality of service and higher power consumption than the second communication mode. The second communication mode is adopted in response to a characteristic of the mobile device power supply indicative of a reduced reserve of power in the power supply, and a state indication is transmitted from the mobile device to the base station. The base station can respond to the state indication from the mobile device by modifying a communication characteristic of the base station with the mobile device, whereby to tend to compensate for the mobile device switching between the first and second communication modes.

Abstract: A semiconductor device comprising interface logic for transmitting data bursts across an interface. The interface logic is arranged to transmit bursts of data across the interface such that the start of a burst of data is substantially aligned with a symbol interval (SI) boundary. The interface logic is further arranged to apply an offset to the SI boundary at the start of the burst of data.

Abstract: Variable attenuators and methods of their operation are provided. A variable attenuator includes first and second variable resistance circuits and multiple additional resistors. The first variable resistance circuit has a plurality of current paths coupled in parallel between input and output terminals. A first current path includes two first resistors coupled in series between the input and output terminals, and a switch, which has a channel coupled across one of the two first resistors. The multiple additional resistors include second and third resistors. The second resistor is coupled between the input terminal and an intermediate node. The third resistor is coupled between the output terminal and the intermediate node. The second variable resistance circuit is coupled between the intermediate node and a voltage reference terminal. The level of attenuation provided by the attenuator is controlled by a switch control circuit based on a digital input.

Abstract: A device and a method for protecting a cryptographic module of which the method includes: estimating a functionality of a circuit that is adapted to malfunction when a physical parameter has a first value different from a nominal parameter value at which the cryptographic module functions correctly. The cryptographic module malfunctions when the physical parameter has a second value different from the nominal parameter value and a difference between the first value and the nominal parameter value being smaller than a difference between the second value and the nominal parameter value. A cryptographic module protective measure is applied if estimating that the circuit malfunctions.

Abstract: A test equipment manifold interface for automated test equipment (ATE) for testing electronic circuits by both Device Under Test Thermal Management (DTM) and non-DTM testing. The manifold interface has a housing, with an air inlet aperture, outlet apertures, and a chamber. The chamber has a chamber inlet provided by the air inlet aperture and a chamber outlet coupled to the outlet apertures. A hollow piston is captive in the chamber. The piston has DTM interface inlet and outlet apertures. In operation, when a DTM load board manifold engages the manifold interface, the hollow piston directs air to flow from the air inlet aperture to the DTM interface outlet aperture. When the DTM load board manifold disengages the manifold interface, the hollow piston directs air to flow from the air inlet to the outlet apertures via the chamber outlet.

Abstract: A mechanism is provided for detecting and correcting a first number of bit errors in a segment of data stored in a memory region being read, while concurrently detecting the presence of higher numbers of bit errors in that segment of data. In the event of detection of a higher number of bit errors in any single segment of data of the memory region, error correction of that higher number of bit errors is performed on the memory region, while concurrently detecting the presence of an even higher level of bit errors. By performing error correction of higher levels of bit errors in such a hierarchical order, memory latency associated with such error correction can be avoided in the majority of data accesses, thereby improving performance of the data access.

Abstract: Determination of an estimated initial angular position of the rotor of an AC motor includes application of voltages corresponding to a high frequency reference signal vector to the stator windings of the motor and production of an estimated initial angular position of the rotor as a function of the resulting q-axis stator current component iq_HF, adjustment of transformation of signal vectors from stationary to rotating coordinates and vice versa using the estimated angular position and production of an adjusted estimated angular position of the rotor as a function of the q-axis stator current component as adjusted.

Abstract: A packaged semiconductor device comprises a package substrate comprising a first package substrate contact and a second package substrate contact, and a semiconductor die over the package substrate. The semiconductor device further includes electrical connections between signal contact pads of the die and the package substrate, and a heat spreader that comprises a first heat spreader portion which is electrically connected to a first signal contact pad and the first package substrate contact and provides an electrical conduction path and a thermal conduction path. A second heat spreader portion provides an electrical conduction path between a second signal contact pad and the second package substrate contact and a thermal conduction path between the die and package substrate. An insulating layer is positioned between the first and second heat spreader portions.

Abstract: A balanced mixer circuit (300, 400, 500, 600, 700 and 800) in a baseband receiver (202) includes an oscillator circuit (212), a mixer (214 and 215), a digital-to-analog converter (258 and 259) and a digital signal processor (250). The mixer includes CMOS devices (301, 302, 303 and 304). In response to differential outputs from the mixer, the digital signal processor controls the digital-to-analog converter to output bias voltages for the gate of at least one of the CMOS devices of the mixer to compensate for imbalance in the differential output of the mixer that may be caused by mismatch among two or more CMOS devices of the mixer or caused by other reasons, in order to increase second order intercept point of the mixer.

Abstract: Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads.

Abstract: An electronic assembly includes a processor die assembly, a first die assembly, and a second die assembly. The first die assembly is positioned on a first side of the processor die assembly. The second die assembly is positioned on a second side of the processor die assembly opposite the first side of the processor die assembly. Through-die vias couple the first and second die assemblies to the processor die assembly.

Abstract: A calibration system (20) configured for communication with an inertial sensor (22) includes a signal generator (24) and processing system (26). A calibration process (60) performed using the calibration system (20) includes applying (90) an electrical stimulus (44) to the inertial sensor (22), receiving an output signal (46) from the sensor (22) produced in response to the electrical stimulus (44) and determining a sensitivity (108) of the inertial sensor (22) to the electrical stimulus (44) in response to the output signal (46) and an applied voltage of the electrical stimulus (44). A sensitivity (112) of the inertial sensor (22) to an inertial stimulus is calculated using the sensitivity (108) and a measured resonant sensitivity (114) of the inertial sensor (22), and the calculated sensitivity (112) is utilized to adjust a gain value (56) for the inertial sensor (22) to calibrate the sensor (22).

Abstract: A power MOSFET has a main-FET (MFET) and an embedded current sensing-FET (SFET). MFET gate runners are coupled to SFET gate runners by isolation gate runners (IGRs) in a buffer space between the MFET and the SFET. In one embodiment, n IGRs (i=1 to n) couple n+1 gates of a first portion of the MFET (304) to n gates of the SFET. The IGRs have zigzagged central portions where each SFET gate runner is coupled via the IGRs to two MFET gate runners. The zigzagged central portions provide barriers that block parasitic leakage paths, between sources of the SFET and sources of the MFET, for all IGRs except the outboard sides of the first and last IGRs. These may be blocked by increasing the body doping in regions surrounding the remaining leakage paths. The IGRs have substantially no source regions.

Abstract: Apparatus, systems, and fabrication methods are provided for biasing amplifier arrangements inside device packages to a target quiescent current. In one embodiment, an amplifier device has an output interface and includes an amplifier arrangement having an amplifier output and impedance matching circuitry coupled between the amplifier output and the output interface. A method for biasing the amplifier arrangement involves measuring or otherwise obtaining a voltage between the amplifier output and the output interface, determining an estimated quiescent current through the amplifier arrangement based on that voltage, and adjusting a bias voltage provided to the input of the amplifier arrangement based on a difference between the estimated quiescent current. In exemplary embodiments, the bias voltage is adjusted until the estimated quiescent current is substantially equal to a target quiescent current.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary method of fabricating a semiconductor device on a doped region of semiconductor material having a first conductivity type involves forming a first region having a second conductivity type within the doped region, forming a body region having the first conductivity type overlying the first region, and forming a drift region having the second conductivity type within the doped region, wherein at least a portion of the drift region abuts at least a portion of the first region. In one embodiment, the dopant concentration of the first region is less than the dopant concentration of the body region and different from the dopant concentration of the drift region.

Abstract: A system for optimizing the number of dies that can be fabricated on a wafer uses a die number optimization (DNO) routine to determine a maximum number of dies for a target die area (TDA), and generate an initial result list of die shapes that have the maximum number of dies for the TDA. Optionally, a die size optimization (DSO) routine can be executed to determine a list of die shapes having a maximum die area corresponding to the maximum number of dies, a first list of optimized die shapes having a maximum area utilization (AU) for a decreased TDA, and/or a second list of optimized die shapes having a minimum AU for an increased TDA. A candidate list (CL) of the various die shapes can be generated, and entries from the CL automatically selected and/or displayed to indicate proposed wafer layouts.

Abstract: A high power semiconductor device for operation at powers greater than 5 watts for wireless applications comprises a semiconductor substrate including an active area of the high power semiconductor device, contact regions formed on the semiconductor substrate providing contacts to the active area of the high power semiconductor device, a dielectric layer formed over a part of the semiconductor substrate, a lead for providing an external connection to the high power semiconductor device and an impedance matching network formed on the semiconductor substrate between the active area of the high power semiconductor device and the lead. The impedance matching network includes conductor lines formed on the dielectric layer. The conductor lines are coupled to the contact regions for providing high power connections to the contact regions of the active area, and have a predetermined inductance for impedance matching.

Abstract: A first dielectric is formed over a semiconductor layer, a first gate layer over the first dielectric, a second dielectric over the first gate layer, and a third dielectric over the second dielectric. An etch is performed to form a first sidewall of the first gate layer. A second etch is performed to remove portions of the first dielectric between the semiconductor layer and the first gate layer to expose a bottom corner of the first gate layer and to remove portions of the second dielectric between the first gate layer and the third dielectric layer to expose a top corner of the first gate layer. An oxide is grown on the first sidewall and around the top and bottom corners to round the corners. The oxide is then removed. A charge storage layer and second gate layer is formed over the third dielectric layer and overlapping the first sidewall.

Abstract: A method of making a semiconductor device includes providing a first semiconductor die and a conductive frame member having at least one conductive via. A first encapsulation layer is formed. A first redistribution layer is formed opposite the first encapsulation layer. A second redistribution layer is formed opposite the first redistribution layer. A second semiconductor die is mounted and electrically connected with receptor pads in the second redistribution layer. A third semiconductor die is mounted to the second semiconductor die and electrically connected with bond wires to a conductor in the second redistribution layer. A second encapsulation layer embeds the second and third semiconductor dies, the wires, and the conductor in the second redistribution layer.

Abstract: A system and method for dynamically migrating stash transactions include first and second processing cores, an input/output memory management unit (IOMMU), an IOMMU mapping table, an input/output (I/O) device, a stash transaction migration management unit (STMMU), and an operating system (OS) scheduler. The first core executes a first thread associated with a frame manager. The OS scheduler migrates the first thread from the first core to the second core and generates pre-empt notifiers to indicate scheduling-out and scheduling-in of the first thread from the first core and to the second core. The STMMU uses the pre-empt notifiers to enable dynamic stash transaction migration.