Abstract: A very low intermediate frequency (VLIF) receiver comprising a first and second mixer circuits, characterised in that receiver comprises a means of estimating the energy in a desired signal band; a means of estimating the energy in a band of frequencies comprising the desired signal band; and a means of altering a VLIF of the receiver according to the ratio of the energy in a desired signal band and the energy in the band of frequencies comprising the desired signal band.

Abstract: A semiconductor process and apparatus provides a planarized hybrid substrate (16) by removing a nitride mask layer (96) and using an oxide polish stop layer (92) when an epitaxial semiconductor layer (99) is being polished for DSO and BOS integrations. To this end, an initial SOI wafer semiconductor stack (11) is formed which includes one or more oxide polish stop layers (91, 92) formed between the SOI semiconductor layer (90) and a nitride mask layer (93). The oxide polish stop layer (92) may be formed by depositing a densified LPCVD layer of TEOS to a thickness of approximately 100-250 Angstroms.

Abstract: A switching device and methods thereof are disclosed. One of the methods includes an arbitration process for communicating a data payload between interface modules. A first intra-chassis packet is sent by a source interface module to the target interface module. The first intra-chassis packet represents a request for permission to transmit a data payload to the target interface. A second intra-chassis packet is received at the source interface module from the target interface module indicating whether the request has been approved. If the request is approved, the source interface module sends a third intra-chassis packet comprising at least a portion of the data payload to the target interface module.

Abstract: A method for forming a capacitor includes providing a metal-containing bottom electrode, forming a capacitor insulator over the metal-containing bottom electrode, forming a metal-containing top electrode over the capacitor insulator, and forming a dielectric-containing field modification layer over the capacitor insulator and at least partially surrounding the metal-containing top electrode. Forming the dielectric-containing field modification layer may include oxidizing a sidewall of the metal-containing field modification layer. A barrier layer may be formed over the capacitor insulator prior to forming the metal-containing top electrode.

Abstract: A packaged integrated circuit has an integrated circuit over a support structure. A plurality of bond wires connected between active terminals of the integrated circuit and the support structure. An encapsulant overlies the support structure, the integrated circuit, and the bond wires. The encapsulant has a first open location in the encapsulant so that a first bond wire is exposed and a second open location in the encapsulant so that a second bond wire is exposed. First and second conductive structures are exposed outside the packaged integrated circuit and are located at the first and second open locations, respectively, and electrically connected to the first and second bond wires, respectively.

Abstract: An electronic device includes an n-channel transistor and a p-channel transistor. The p-channel transistor has a first gate electrode with a first work function and a first channel region including a semiconductor layer immediately adjacent to a semiconductor substrate. In one embodiment, the first work function is less than the valence band of the semiconductor layer. In another embodiment, the n-channel transistor has a second gate electrode with a second work function different from the first work function and closer to a conduction band than a valence band of a second channel region. A process of forming the electronic device includes forming first and second gate electrodes having first and second work functions, respectively. First and second channel regions having a same minority carrier type are associated with the first and second gate electrodes, respectively.

Abstract: Transmission of a high frequency signal is provided by a passive mixer. The passive mixer receives a low frequency signal as an input. The passive mixer includes a plurality of transistors each with a gate, a source, and a drain. The passive mixer also includes a local oscillator connected to the gates of the transistors. The gates of the transistors are also connected to a DC bias proportional to the threshold voltage of the transistors. In addition, an output of the passive mixer may be attenuated by a passive attenuator wherein both the passive attenuator and passive mixer are substantially free of quiescent current.

Abstract: An integrated circuit comprises a delta-sigma modulator incorporating a delta-sigma modulation loop having an analog-to-digital converter in a forward path and a digital-to-analog converter in a feedback path such that the ADC is arranged to receive samples of an analog input signal. The ADC is operably coupled to auto-ranging logic arranged to shift a digital output signal from the ADC representative of the analog input signal to counteract an effect of an input variation of the analog input signal. In this manner, the application of auto-ranging logic with a self-recovery technique supports a reduction of the number of comparators required in a multi-bit delta-sigma ADC.

Abstract: An authentication system for reducing the power consumed during an authentication process and shortening the authentication time includes an electrode plate. The electrode plate has a unique shape that defines an authentication key. An electric field sensor detects capacitance corresponding to the shape of the electrode plate to generate a detection signal. A signal monitor compares the detection signal of the electric field sensor with a preset signal and generates a determination signal indicating the comparison result.

Abstract: A low power servo-controlled single clock ramp generator (100) includes a fast switched comparator (102), charge pump (110) and voltage-to-current converter (120) connected to provide a feedback control mechanism under control of a pulse comparison clock signal (pulse_comp) and a reset pulse clock signal (rst_pulse) that are generated from a single input clock signal (clkin) so that there are well defined time intervals between pulses in the pulse comparison clock signal and the reset pulse clock signal, thereby providing a ramp signal (Vramp_out) having a stable, frequency-independent amplitude that is not limited by the reference voltage.

Abstract: A method of forming a semiconductor package (10) including forming a plurality of cavities (14) in a substrate (12). An electrically conductive pattern (16) is formed on the substrate (12) and over the cavities (14). An electrically insulating layer (22) is formed over the substrate (12) and the electrically conductive pattern (16). A plurality of vias (24) is formed in the electrically insulating layer (22). An integrated circuit (IC) die (28) is attached to the electrically insulating layer (22) and electrically connected to the vias (24) such that the IC die (28) is connected to the electrically conductive pattern (16). A molding operation is performed to encapsulate the IC die (28). The substrate (12) is removed such that the electrically conductive pattern (16) is exposed.

Abstract: A memory having at least one memory array block, the at least one memory array block comprising N wordlines, wherein N is greater than one, is provided. The memory comprises a plurality of sense amplifiers coupled to the at least one memory array block. The memory further comprises at least one dummy bitline, wherein the at least one dummy bitline comprises M dummy bitcells, wherein M is equal to N. The memory further comprises a timing circuit coupled to the at least one dummy bitline, wherein the timing circuit comprises at least one stack of pull-down transistors coupled to a sense circuit for generating a latch control output signal used for timing control of memory accesses. Timing control may include generating a sense trigger signal to enable the plurality of sense amplifiers for read operations and/or generating a local reset signal for terminating memory accesses, such as disabling the plurality of write drivers for write operations.

Abstract: A data processing system may comprise an initiator device having an output whose timing is referenced by a clock input alone corresponding to a first delay along a signaling path. The exemplary data processing system further may further comprise a target device having an input whose timing is referenced by a clock input alone corresponding to a second delay along the signaling path and a system bus interconnected between the initiator device and the target device within the signaling path. The exemplary data processing system may further comprise a dynamic timing bridge coupled to the system bus within the signaling path, wherein responsive to a control signal representative of at least one system characteristic, the dynamic timing bridge performs one selected from the group consisting of (i) inserting a cyclic latency within the signaling path and (ii) not inserting the cyclic latency within the signaling path.

Abstract: A method for integrating Non-Volatile Memory (NVM) circuitry with logic circuitry is provided. The method includes depositing a first layer of gate material over the NVM area and the logic area of the substrate. The method further includes depositing multiple adjoining sacrificial layers comprising nitride, oxide and nitride (ARC layer) overlying each other. The multiple adjoining sacrificial layers are used to pattern select gate and control gate of memory transistor in the NVM area, and the ARC layer of the multiple adjoining sacrificial layers is used to pattern gate of logic transistor in the logic area.

Abstract: A floating gate memory cell has a floating gate in which there are two floating gate layers. The top layer is etched to provide a contour in the top layer while leaving the lower layer unchanged. The control gate follows the contour of the floating gate to increase capacitance therebetween. The two layers of the floating gate can be polysilicon separated by a very thin etch stop layer. This etch stop layer is thick enough to provide an etch stop during a polysilicon etch but preferably thin enough to be electrically transparent. Electrons are able to easily move between the two layers. Thus the etch of the top layer does not extend into the lower layer but the first and second layer have the electrical effect for the purposes of a floating gate of being a continuous conductive layer.

Abstract: A wireless communication device comprises a number of sub-systems operably coupled to a data interface for routeing data between the number of sub-systems. A clock generation function generates a clock signal substantially at a data transfer rate to be used over the data interface whereby the clock signal is generated at a rate that minimises harmonic content of the clock signal at operational frequencies of the wireless communication device. Thus, a suitable data rate is selected and supported by the data interface that accommodates the desired bandwidth, clock rate and/or chip rate of the functional elements that are coupled by the data interface within the wireless communication device, whilst minimising the effects of harmonic interference from the clock signal(s).

Abstract: A method for forming a via includes forming a gate electrode over a semiconductor substrate, forming a source/drain region in the semiconductor substrate adjacent the gate electrode, forming a silicide region in the source/drain region, forming a post-silicide spacer adjacent the gate electrode after forming the silicide region, forming an interlayer dielectric layer over the gate electrode, the post-silicide spacer, and the silicide region, and forming a conductive via in the interlayer dielectric layer, extending to the silicide region.

Abstract: A discrete time signal resampling circuit (200). A data sample processing module (260) removes selected samples from a sequential plurality of discrete time signal samples to implement fractional resampling where the data sample processing module stores fewer samples than the number of samples between samples to be removed. A coefficient generator (240) in the resampling circuit generates a sequence of finite impulse response filter coefficients, with each coefficient in the sequence being associated with a respective distinct portion of a plurality of discrete time signal samples. A coefficient multiplier (264) multiplies each of the sequential plurality of finite impulse response filter coefficients by its associated respective distinct portion of the plurality of discrete time signal samples. An adder (236) produces a resampled output sample that consists of a sum of elements of the product vector produced by the coefficient multiplier.

Abstract: A method of making a semiconductor device using a semiconductor substrate includes forming a first insulating layer having a first band energy over the semiconductor substrate. A first semiconductor layer having a second band energy is formed on the first insulating layer. The first semiconductor layer is annealed to form a plurality of first charge retainer globules from the first semiconductor layer. A first protective film is formed over each charge retainer globule of the plurality of first charge retainer globules. A second semiconductor layer is formed having a third band energy over the plurality of first charge retainer globules. The second semiconductor layer is annealed to form a plurality of storage globules from the second semiconductor layer over the plurality of first charge retainer globules. A magnitude of the second band energy is between a magnitude of the first band energy and a magnitude of the third band energy.

Abstract: A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).