Abstract: Methods and apparatus are provided for non-volatile semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a first surface of the substrate, and a multilayered gate structure containing nano-crystals located above the channel region. The gate structure comprises, a gate dielectric substantially in contact with the channel region, spaced-apart nano-crystals disposed in the gate dielectric, one or more impurity blocking layers overlying the gate dielectric and a gate conductor layer overlying the one more impurity blocking layers. The blocking layer nearest the gate conductor can also be used to adjust the threshold voltage of the device and/or retard dopant out-diffusion from the gate conductor layer.

Abstract: An embodiment of a semiconductor device includes a supporting member, a semiconductor die mounted on a portion of the supporting member, a buffer region, and a plastic encapsulation. The buffer region covers a portion of the die, and includes a resin and filler particles packed within the resin. The filler particles have a mix of filler sizes and are tightly packed within the resin. The buffer region has a first dielectric constant and a first loss tangent. The plastic encapsulation encloses at least part of the supporting member and the die. The plastic encapsulation includes a plastic material of a second dielectric constant and a second loss tangent, where the second dielectric constant is larger than the first dielectric constant and the second loss tangent is larger than the first loss tangent.

Abstract: A cascode amplifier (CA) (60) is described having a bottom transistor (T1new) with a relatively thin gate dielectric (67) and higher ratio (RB) of channel length (Lch1new) to width (W1new) and a series coupled top transistor (T2new) with a relatively thick gate dielectric (68) and a lower ratio (RT) of channel length (Lch2new) to width (W2new). An improved cascode current mirror (CCM) (74) is formed using a coupled pair of CAs (60, 60?), one (60) forming the reference current (RC) side (601) and the other (60?) forming the mirror current side (602) of the CCM (74). The gates (65, 65?) of the bottom transistors (T1new, T3new) are tied together and to the common node (21) between the series coupled bottom (T1new) and top (T2new) transistors of the RC side (601), and the gates (66?, 66?) of the top transistors (T2new, T4new) are coupled together and to the top drain node (64) of the RC side (601).

Abstract: A memory including a data line, a sense amplifier, and an array of memory cells. The memory includes a transistor for coupling the data line to memory cells of the array for reading. The transistor is biased at a voltage that is higher than a voltage that the data line is biased during precharging. The transistor is part of a regulation circuit. The regulation circuit includes transistors with a higher dielectric breakdown voltage than transistors of the sense amplifier.

Abstract: An electrostatic discharge (ESD) protection clamp (61) for I/O terminals (22, 23) of integrated circuits (ICs) (24) comprises an NPN bipolar transistor (25) coupled to an integrated Zener diode (30). Variations in the break-down current-voltage characteristics (311, 312, 313, 314) of multiple prior art ESD clamps (31) in different parts of the same IC chip is avoided by forming the anode (301) of the Zener (30) in the shape of a base-coupled P+ annular ring (75) surrounded by a spaced-apart N+ annular collector ring (70) for the cathode (302) of the Zener (30).

Abstract: An arrangement (300) and method, for iterative channel impulse response estimation in a system such as a GSM/EDGE system employing a transmission channel, by: producing (310) from a received signal (y) a channel impulse response estimate signal (p); and producing (320) from the received signal (y) a noise estimate signal (w) which is iteratively fed back to improve the channel impulse response estimate signal (p). The noise estimate signal comprises a matrix (w) respresenting the inverse of noise covariance; the matrix may be calculated at each iteration or may be selected from predetermined values corresponding to statistics of expected noise. This provides the advantages of reduced complexity, independence of the equalization method used to produce the channel impulse response estimate signal, and consequent performance improvement.

Abstract: An electrostatic discharge (ESD) protection device (61, 71), coupled across input-output (I/O) (22) and common (23) terminals of a core circuit (24) that it is intended to protect from ESD events, comprises, multiple serially coupled ESD clamp stages (41, 41?), each stage (41, 41?) comprising an interior node (52, 52?) and first (32, 32?) and second terminal (42, 42?) nodes wherein the first terminal node (42) of the first clamp stage (41) is coupled to the common terminal (23) and the second terminal node (42?) of the last clamp stages (41?) is coupled to the I/O terminals (22). A resistance-capacitance ladder (60) is provided in parallel with some of the clamp stages (41, 41?), with a resistance (R1, R2, R3 etc.) coupled to each of the nodes (32, 52, 65 (42; 32?)) of one of the ESD clamp stages (41, 41?) by first terminals thereof and capacitors (C1, C2, etc.) are coupled between second terminals of the resistances (R1, R2, R3 etc.).

Abstract: In a closed-loop wireless communication system, a codebook-based feedback mechanism is provided to enable non-unitary precoding for multi-stream transmission, where in each stream is optimized with suitable transmission power allocation and AMC. The codebook-based feedback mechanism uses a precoding codebook having a power allocation matrix which is constrained to specify that beamforming always applies full power to a predetermined beam. With this constraint, a one-bit power allocation feedback index may be used to switch between beamforming and spatial multiplexing.

Abstract: A memory device is formed on a semiconductor substrate. A select gate electrode and a control gate electrode are formed adjacent to one another. One of either the select gate electrode or the control gate electrodes is recessed with respect to the other. The recess allows for a manufacturable process with which to form silicided surfaces on both the select gate electrode and the control gate electrode.

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a semiconductor structure equipped with a gate (209) and a channel region, said channel region being associated with the gate; (b) depositing a first sub-layer (231) of a first stressor material over the semiconductor structure, said first stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; (c) curing the first stressor material through exposure to a radiation source; (d) depositing a second sub-layer (233) of a second stressor material over the first sub-layer, said second stressor material containing silicon-nitrogen bonds and imparting tensile stress to the semiconductor structure; and (e) curing the second sub-layer of stressor material through exposure to a radiation source.

Abstract: Systems and methods are described for improving the startup linearization of a power amplifier. A bias network is provided to generate a bias signal during amplifier startup, and the amplifier is configured to produce an output signal in response to the input signal and the bias signal. A variable impedance is provided to couple the input signal and the output signal in parallel with the amplifier. A controller is configured to apply a weighting function to the variable impedance over at least a startup phase of the amplifier system. By applying a non-linear or other weighting function to the variable impedance during startup, the gain of the amplifier can be controlled to thereby extend a time period over which the output power of the amplifier increases in a generally linear manner toward an operating level.

Abstract: A method for forming a microelectronic assembly and a microelectronic assembly are provided. First and second semiconductor devices (72) are formed over a substrate (20) having a first dopant type at a first concentration. First and second buried regions (28) having a second dopant type are formed respectively below the first and second semiconductor devices with a gap (34) therebetween. At least one well region (64, 70) is formed over the substrate and between the first and second semiconductor devices. A barrier region (48) having the first dopant type at a second concentration is formed between and adjacent to the first and second buried regions such that at least a portion of the barrier region extends a depth (82) from the first and second semiconductor devices that is greater or equal to the depth of the buried regions.

Abstract: A radio frequency transceiver (102), including a transmitter (104), a duplexer (108) and a direct-conversion receiver (106) including a mixer (140 and 141). An IIP2 calibration system (170), coupled to the transceiver, includes an IIP2 coefficient estimator (172) for calculating an estimate of second-order distortion intermodulation distortion, and an IIP2 controller (174) for adjusting an IIP2 tuning port of the mixer in the receiver to minimize second-order distortion intermodulation distortion in the receiver that may be caused by the receiver receiving a transmit RF signal leaking through the duplexer.

Abstract: A transistor structure of an electronic device can include a gate dielectric layer and a gate electrode. The gate electrode can have a surface portion between the gate dielectric layer and the rest of the gate electrode. The surface portion can be formed such that another portion of the gate electrode primarily sets the effective work function in the finished transistor structure.

Abstract: An electronic device (120) is provided that comprises: a transceiver circuit (310) configured to send and receive signals; a memory unit (330) configured to contain testing, configuration, and calibration (TCC) code (440, 450, 460) used to define TCC functions in the device, and operational code (470) used to define operational functions in the device; and a device controller (320) connected to the transceiver circuit and the memory unit, configured to control the device in an operational mode in accordance with the operational code and operational instructions received via the transceiver circuit (650), and to control the device in a TCC mode in accordance with the TCC code and TCC instructions received via the transceiver circuit (635, 640). The device controller is further configured to permanently disable access to at least a portion of the TCC code in response to a disable instruction received via the transceiver circuit (645).

Abstract: Forming a packaged device having a semiconductor device having a first major surface and a second major surface includes forming an encapsulating layer over the second major surface of the semiconductor device and around sides of the semiconductor device and leaving the first major surface of the first semiconductor device exposed. An insulating layer is formed over the first major surface. A via is formed in the insulating layer. A tangible element is coupled to the semiconductor device through the via. At least a portion of the tangible element is surrounded with a cavity wall having a first face toward the element and a second face away from the element. A supporting layer, after surrounding the tangible element, is formed over the insulating layer so that the supporting layer is adjacent to the second face and blocked from the first face thereby providing protection for the tangible element.

Abstract: A technique of detecting an open integrated circuit (IC) pin includes selectively coupling a first open detect circuit, which includes a first inverter having a first threshold, to the IC pin. Next, a first logic state at an output of the first inverter is determined. Then, based upon the first logic state, it is determined whether the IC pin is open or whether it is indeterminate as to whether the IC pin is open. When it is indeterminate as to whether the IC pin is open, based on the first logic state, a second open detect circuit is selectively coupled to the IC pin. The second open detect circuit includes a second inverter having a second threshold (the first threshold is greater than the second threshold). A second logic state at an output of the second inverter is then determined. Finally, based upon the first and second logic states, it is determined whether the IC pin is open.

Abstract: A system (500) and method (400) are presented for calibrating an analog signal path (200) associated with an Ultra Wideband (UWB) receiver (103). The analog signal path includes a plurality of analog gain stages (210, 212-214, 216), a local oscillator mixer stage (211), a compensation stage (218), and a converter stage (219). An information signal includes whitened symbols (306). When a predetermined number of whitened symbols are accumulated for one of a plurality of gain configurations, an arithmetic mean is calculated and used an offset value. The offset value is retrieved whenever the gain configuration is activated and applied at the compensation stage to reduce the offset.

Abstract: A slot-based low Intermediate Frequency (‘IF’) radio receiver comprises an IF local oscillator for producing I and Q IF local oscillator signal components in phase quadrature, and I and Q mixer channels for mixing the input signal with the I and Q IF local oscillator signal components to produce I and Q IF signal components. The IF local oscillator frequency alternates a plurality of times during each frame between first and second values, one of which is greater and the other smaller than the desired carrier frequency of the input signal so as to reduce the effect of adjacent and alternate interferers. The phase of the baseband local oscillator is alternated in synchronism with the alternation of the IF local oscillator frequency.

Abstract: Blind modulation detection in a receiver of a wireless communication device calculates error energies for PSK and GMSK based on differences between a received training sequence signal and synthesized training signals generated from PSK and GMSK channel estimations and a known training sequence phase rotated by 3?/8 and ?/2 per symbol, respectively. A highly reliable modulation detection in a Single Antenna Interference Cancellation (SAIC) operational environment is achieved by a dual comparison of a total energy value of the received signal and the two error energies. PSK is determined if the PSK error energy value is found to be lower than both the GMSK error energy value and the total energy value by predetermined thresholds; otherwise the modulation type is determined to be GMSK.