Abstract: Method and apparatus are provided for routing interconnects of a dual-gate electronic device operating in a differential configuration. An electronic apparatus formed on a substrate is provided comprising a first interconnect (40, 42, 44) configured to couple to a first region of the substrate, a first gate (22, 24, 26, 28) coupled to the first interconnect and configured to receive a first differential input, a second interconnect (30, 32, 34, 36, 38) parallel to the first interconnect and configured to couple to a second region of the substrate, and a second gate (20) coupled to the second interconnect and configured to receive a second differential input. The first gate is parallel to the first interconnect, and the second gate is parallel to the second interconnect.

Abstract: A system and method is provided for processing a digital image. The system and method processes image data by replacing bad pixel data in the digital image. Specifically, the system and method replaces bad pixel data in the image data by comparing each pixel to selected neighboring pixels, including pixels of other colors in some cases, and determining if the pixel is likely corrupt, such as from a detective pixel. Corrupted pixels are then replaced using averages, means, maximums, or other statistical functions of select nearby pixels.

Abstract: A semiconductor device structure is formed over a semiconductor substrate and has a gate dielectric over the semiconductor substrate and a gate over the gate dielectric. The gate, at an interface with the gate dielectric, comprises a transition metal, carbon, and an electropositive element. The transition metal comprises one of group consisting of tantalum, titanium, hafnium, zirconium, molybdenum, and tungsten. The electropositive element comprises one of a group consisting of a Group IIA element, a Group IIIB element, and lanthanide series element.

Abstract: A level shifter (10) includes a first transistor (12) having a gate configured to receive a first input signal, and a second transistor (14) having a gate configured to receive a second input signal. A first feedback circuit is connected to drains of the first transistor (12) and the second transistor (14). A second feedback circuit is connected to the first feedback circuit.

Abstract: Flip-chip electronic devices (40, 70, 80, 90) employ bumps (42, 72, 82) for coupling to an external substrate. Device cells (43, 73, 83, 93) and bumps (42, 72, 82) are preferably arranged in clusters (46) where four bumps (42, 72, 82) substantially surround each device cell (43, 73, 83, 93) or form a cross with the device cell (43, 73, 83, 93) at the intersection of the cross. The bumps (42, 72, 82) are desirably spaced apart by the minimum allowable bump (42, 72, 82) pitch (Lm). Typically, each device cell (43, 73, 83, 93) contains one or more active device regions (44, 74, 86, 96) depending on the overall function. Complex devices (40, 70) are formed by an X-Y array of the clusters (46), where adjacent clusters (46) may share bumps (43, 73, 83, 93) and/or device cells (43, 73, 83, 93). In a preferred embodiment, the bumps (42, 82) form the outer perimeter (48) of the device (40, 80, 90). The maximum device temperature and overall noise is reduced.

Abstract: A wirebond array (100) comprising a plurality of signal wires 110 and a plurality of ground wires (120) interdigitated with and substantially parallel to the set of signal wires (110). In one embodiment, each of the plurality of signal wires (110) and ground wires (120) is attached to a first semiconductor device (102) (e.g., a microwave power device). In another, each of the plurality of signal wires (110) is further attached to a package lead (104). In one embodiment, each of the plurality of ground wires (120) is further attached to a ground connection region (106) substantially coplanar with the package lead (104). Alternatively, each of the plurality of signal wires (110) is further attached to a second semiconductor device, wherein each of the plurality of ground wires (120) is further attached to the second semiconductor device.

Abstract: A circuit has an input for receiving a power mode control signal to indicate a low power mode. A plurality of non-inverting buffers forms a fanout signal distribution network and provides buffering of the power mode control signal for gated power domain functional circuitry. Each non-inverting buffer has an even number of serially-connected inverting gates, at least a portion providing respective outputs having a valid logic state in the low power mode. Two voltages are used, one of which is disconnected during the low power mode. The non-inverting buffers have a first inverting gate connected to a continuous voltage terminal and a second inverting gate, collectively sized larger than the first inverting gate and connected to a voltage terminal which is selectively disconnected during the low power mode from the continuous voltage terminal.

Abstract: An embodiment of a semiconductor device includes a semiconductor substrate having a principal surface, spaced-apart source and drain regions separated by a channel region at the principal surface, and a multilayered gate structure located over the channel region. The multilayered gate structure includes a gate dielectric layer in contact with the channel region, a first conductor comprising a metal oxide overlying the gate dielectric layer, a second conductor overlying the first conductor, and an impurity migration inhibiting layer between the gate dielectric layer and the first conductor or between the first conductor and the second conductor.

Abstract: A device having a power supply monitoring capabilities, the device includes: a power supply unit; at least one real time clock generator counter adapted to receive a supply voltage from the power supply unit; a fixed value storage circuit that is un-accessible to software executed by a processor; wherein the fixed value storage circuit stores a fixed value; wherein the fixed value includes multiple bits; a volatile storage unit, being accessible to the processor; wherein the volatile storage unit is adapted to: (i) store a reset value after being reset; (ii) receive the fixed value during an initialization state; and (iii) store the fixed value until being reset; wherein the volatile storage unit is designed such that there is a low probability that the reset value equals the fixed value; and a comparator adapted to provide a tamper indication if the fixed value stored at the fixed value storage circuit differs from a value stored at the volatile storage unit.

Abstract: A device and a method for fetching instructions. The device includes a processor adapted to execute instructions; a high level memory unit adapted to store instructions; a direct memory access (DMA) controller that is controlled by the processor; an instruction cache that includes a first input port and a second input port; wherein the instruction cache is adapted to provide instructions to the processor in response to read requests that are generated by the processor and received via the first input port; wherein the instruction cache is further adapted to fetch instructions from a high level memory unit in response to read requests, generated by the DMA controller and received via the second input port.

Abstract: In response to determining a bit cell of a bit cell array of a memory device is a defective bit cell, a portion of the bit cell array including the defective bit cell is decoupled from a power source of the memory device. The portion can be decoupled via a fuse, a transistor, and the like.

Abstract: An integrated circuit comprises a power device located on a die. The power device is operably coupled to a processing function, wherein the signal processing function is operably coupled to two or more temperature sensors. A first temperature sensor is operably coupled to the power device to measure a temperature of the power device and the second temperature sensor is located, such that it measures a substantially ambient temperature related to the die. The signal processing function determines the temperature gradient therebetween.

Abstract: A transceiver (110, 120, 130, 140) is provided, comprising: a receiver circuit (230) configured to process an incoming signal received over a transmission channel; a transmitter circuit (240) configured to generate an outgoing signal; a preamble detector (260) configured to monitor the transmission channel to determine whether a preamble or header is currently being transmitted over the transmission channel; and a control circuit (250) configured to enable the transmitter circuit to generate the outgoing signal whenever the preamble detector determines that no preamble or header is currently being received.

Abstract: A method for operating a processor in data processing system comprises: asserting a debug control signal to cause the processor to enter a debug operating mode; initializing a plurality of shared processor resources with debug configuration information, wherein the plurality of shared processor resources are shared between a normal operating mode and the debug operating mode; executing instructions with the processor while in the debug operating mode; re-initializing the processor in response to a reset event; and preventing the reset event from re-initializing a predetermined portion of the debug configuration information in the plurality of shared processor resources. This allows processor debugging through reset events without losing the debug information.

Abstract: A method of error correction includes retrieving raw data from a memory device during a first operational phase of the error correction device. The raw data is retrieved by a bus interface device that interfaces with a variety of memory devices. During a second operational phase, the raw data is outputted from the bus interface device to the bus master. In addition, error correction data is calculated, and error correction is performed on the raw data during the second operational phase. By retrieving the raw data before performing error correction, and by outputting the raw data during the same operational phase, data may be retrieved from the memory more rapidly.

Abstract: An adaptive variable length pulse synchronizer including a state keeper circuit, an asynchronous pulse edge detection circuit, a data synchronization circuit, and a pulse edge synchronization circuit. The state keeper circuit detects a leading edge of the asynchronous pulse. The asynchronous pulse edge detection circuit detects a trailing edge of the asynchronous pulse after the state keeper circuit has detected the leading edge. The asynchronous pulse edge detection circuit further provides a pulse synchronized with a clock signal after the asynchronous pulse has been detected. The data synchronization circuit latches the asynchronous data and provides the synchronous data in response to the synchronous pulse. The pulse edge synchronization provides the synchronous ready signal after synchronous data has been provided.

Abstract: A method of making a semiconductor device includes providing a first wafer and providing a second wafer having a first side and a second side, the second wafer including a semiconductor substrate, a storage layer, and a layer of gate material. The storage layer may be located between the semiconductor structure and the layer of the gate material and the storage layer may be located closer to the first side of the second wafer than the semiconductor structure. The method further includes boding the first side of the second wafer to the first wafer. The method further includes removing a first portion of the semiconductor structure to leave a layer of the semiconductor structure after the bonding. The method further includes forming a transistor having a channel region, wherein at least a portion of the channel region is formed from the layer of the semiconductor structure.

Abstract: A processor has a fetch unit and a branch execution unit. The fetch unit has a branch predictor. The branch predictor has a branch target buffer and a branch direction predictor. A wake value is a number of instruction fetches that is predicted to be performed after a fetch of a branch. Thus, for a first branch, for example, a first wake number is predicted. A low power mode of the branch predictor is enabled for a duration of the first wake value in response to hit in the branch target buffer in which the hit is in response to the first branch.

Abstract: A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some examples, the second tensile stressor layer has a greater shrinkage percentage due to the curing than the first tensile stressor layer. In one form, the second tensile stressor layer after the curing exerts a greater tensile stress than the first tensile stressor layer. The tensile stressors layers are utilized to improve carrier mobility in an N-channel transistor and thus enhance transistor performance. In one form a single group of overlying tensile stressor layers is provided with each layer being increasingly thicker and having increasingly more hydrogen prior to being cured. In other embodiments multiple overlying groups are formed, each group having a similar repeating depth and hydrogen profile.

Abstract: A trimming circuit, an electronic circuit, and a trimming control system for reducing the risk of failures when perform trimming and for ensuring that a desired device is readily manufactured. A selector, a resistor, and a fuse are connected in series between a power supply and ground. A probe pad for performing probe trimming is connected immediately above the fuse. The selector includes two back-to-back connected n-type MOS transistors. Each n-type MOS transistor has a gate terminal connected to a selector control circuit. A trim sense circuit is arranged at a power supply side of the fuse. The trim sense circuit detects fuse breakage and changes the operation of an element associated with each trimming circuit TC based on the detection.