Abstract: An erase operation in a non-volatile memory includes selecting a block on which to perform an erase operation, erasing the selected block, receiving test data corresponding to the selected block, determining a soft program verify voltage level based on the test data, and soft programming the erased selected block using the soft program verify voltage level. A non-volatile memory includes a plurality of blocks, a test block which stores test data corresponding to each of the plurality of blocks, and a flash control coupled to the plurality of blocks and the test block, the flash control determining a soft program verify voltage level for a particular block of the plurality of blocks based on the test data for the particular block when the particular block is being soft programmed.

Abstract: A memory device is disclosed. A reference device of the memory includes a trimmable current source and a fixed current source. Currents provided by each source are summed to provide a reference current to a sense amplifier. The sense amplifier senses the state of a bit cell by comparing a current from the bit cell, representative of a logic value, to the reference current. By basing the reference current on both a fixed and a trimmable current source, the reference device can be trimmed to compensate for process and operating characteristics of the device, while maintaining a minimum reference current in the event of a disturb mechanism that results in loss of the current provided by the trimmable current source.

Abstract: An embodiment of a semiconductor device includes a gate electrode overlying a substrate and a lightly doped epitaxial layer formed on the substrate. A high energy implant region forms a well in a source side of the lightly doped epitaxial layer. A self-aligned halo implant region is formed on a source side of the device and within the high energy well implant. An implant region on a drain side of the lightly doped epitaxial layer forms a gate overlapped LDD (GOLD). A doped region within the halo implant region forms a source. A doped region within the gate overlapped LDD (GOLD) forms a drain.

Abstract: A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.

Abstract: A wireless communication unit comprises a transmitter having an analogue feedback power control loop with an input and a power amplifier having a power amplifier output, where the analogue feedback power control loop is arranged to feedback a signal to the input to set an output power level of the transmitter. The wireless communication unit further comprises an outer digital loop operably coupled from the power amplifier output to the transmitter. In this manner, the inner analogue loop is used to linearise a response obtained from the power amplifier and an outer digital loop wherein the outer digital loop controls the inner analogue loop with regard to saturation detection and correction as well as facilitating multi-mode operation of the wireless communication unit.

Abstract: A method of testing critical delay paths of an integrated circuit design is disclosed. The method includes predicting and ranking a set of critical delay paths based on a set of predicted delay characteristics. Integrated circuits based on the integrated circuit design are tested to determine a set of actual delay measurements for the critical delay paths. The critical delay paths are ranked based on the actual delay measurements, and the results are correlated to the predicted ranking of critical delay paths to produce a confidence measurement that measures the likelihood that the actual critical delay paths of the design have been tested for a given production batch of devices.

Abstract: An integrated circuit (203) for use in processing streams of data generally and streams of packets in particular. The integrated circuit (203) includes a number of packet processors (307, 313, 303), a table look up engine (301), a queue management engine (305) and a buffer management engine (315). The packet processors (307, 313, 303) include a receive processor (421), a transmit processor (427) and a risc core processor (401), all of which are programmable. The receive processor (421) and the core processor (401) cooperate to receive and route packets being received and the core processor (401) and the transmit processor (427) cooperate to transmit packets. Routing is done by using information from the table look up engine (301) to determine a queue (215) in the queue management engine (305) which is to receive a descriptor (217) describing the received packet's payload.

Abstract: A method of forming a metal oxide semiconductor (MOS) device comprises defining an active area in an unstrained semiconductor layer structure, depositing a hard mask overlying the active area and a region outside of the active area, patterning the hard mask to expose the active area, selectively growing a strained semiconductor layer overlying the exposed active area, and forming a remainder of the MOS device. The active area includes a first doped region of first conductivity type and a second doped region of second conductivity type. The strained semiconductor layer provides a biaxially strained channel for the MOS device.

Abstract: A receive buffer of the type that receives information at regular time slots and is required to indicate any status changes to a micro control unit (MCU), the receive buffer including: a slot status field for storing slot status information at each timeslot for the receive buffer; a receive interrupt flag for sending a signal to the MCU for indicating a change of the slot status field on receipt of the information at each timeslot; characterised in that the receive buffer also includes: an empty slot recognition bit for determining if an empty slot is received and generating an indicator thereof, wherein the indicator is passed to the MCU instead of the useless empty slot status field.

Abstract: A data communication network may include two or more master clocks, and a synchronisation system connected to the master clocks. The synchronisation system may determine a time-base for the master clocks. The synchronisation system may control the master clocks according to the determined time-base. The data communication network may include one or more slave clocks. The slave clocks may be controlled by a slave clock time-base controller based on time information of a single selected master clock selected from the master clocks.

Abstract: A method for testing a noise immunity of an integrated circuit; the method includes: determining a value of a power supply noise regardless of a relationship between the power supply noise value and a phase sensitive signal edge position resulting from an introduction of the power supply noise; receiving, by the integrated circuit, a phase sensitive signal; introducing jitter to the phase sensitive signal by a circuit adapted to generate a substantially continuous range of power supply noise such as to alter edges position of the phase sensitive signal; providing the jittered phase sensitive signal to at least one tested component of the integrated circuit; and evaluating at least one output signal generated by the at least tested component to determine the noise immunity of the integrated circuit.

Abstract: A data communication system includes one or more data processing units and includes a central control unit. The decentralized data processing units are connected to the central control unit by data connection. The central control unit (10) includes a synchronisation unit for outputting via the data connection an synchronisation signal to the data processing unit. The data processing unit includes a data generator for generating data and transmitting, after the synchronisation signal, data to the central control unit.

Abstract: A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.

Abstract: An electronic device can include a nonvolatile memory cell having DSEs within a dielectric layer. In one aspect, a process of forming the electronic device can include implanting and nucleating a first charge-storage material to form DSEs. The process can also include implanting a second charge-storage material and growing the DSEs such that the DSEs include the first and second charge-storage material. In another aspect, a process of forming the electronic device can include forming a semiconductor layer over a dielectric layer, implanting a charge-storage material, and annealing the dielectric layer. After annealing, substantially none of the charge-storage material remains within a denuded zone within the dielectric layer. In a third aspect, within a dielectric layer, a first set of DSEs can be spaced apart from a second set of DSEs, wherein substantially no DSEs lie between the first set of DSEs and the second set of DSEs.

Abstract: An electronic device can include memory cells that are connected to gate lines, bit lines, or a combination thereof. In one embodiment, at least two sets of memory cells can be oriented substantially along a first direction, (e.g., rows or columns). A first gate line may be electrically connected to fewer rows or columns of memory cells as compared to a second gate line. For example, the first gate line may only be electrically connected to the first set of memory cells, and the second gate line may be electrically connected to the second and third sets of memory cells. In another embodiment, a first bit line may be electrically connected to fewer rows or columns of memory cells as compared to a second bit line. In still another embodiment, another set of memory cells may be oriented substantially along another direction that is substantially perpendicular to the first direction.

Abstract: A method is provided for estimating a frequency offset value. This method includes: receiving a signal from the transmitting device at the receiving device, the received signal having a transmitter frequency (510); generating a local signal at the receiving device, the local signal having a starting frequency (520); comparing a received signal phase and a local signal phase to determine an adjusted error signal representing a phase difference between the received signal and the local signal (530); adjusting a current frequency of the local signal from the starting frequency to the transmitting frequency over a time period (540); integrating the adjusted error signal over the time period to generate an integrated error signal (550); and filtering the integrated error signal to generate a frequency difference estimate indicative of the frequency difference between the transmitter frequency and the starting frequency (560).

Abstract: An ultra wide bandwidth communications system, method and computer program product including an ultra wide bandwidth timing generator. The timing generator includes a high frequency clock generation circuit having low phase noise; a low frequency control generation circuit; and a modulation circuit coupled between the high frequency clock generation circuit and the low frequency control generation circuit. The high frequency clock generation circuit generates a plurality of high frequency clock signals. The low frequency control generation circuit generates a plurality of low frequency control signals. The modulation circuit modulates the high frequency clock signals with the low frequency control signals to produce an agile timing signal at a predetermined frequency and phase.

Abstract: Methods and apparatus are provided for ESD protection of integrated passive devices (IPDs). The apparatus comprises one or more IPDs having terminals or other elements potentially exposed to ESD transients coupled by charge leakage resistances having resistance values much larger than the ordinary impedance of the IPDs at the operating frequency of interest. When the IPD is built on a semi-insulating substrate, various elements of the IPD are coupled to the substrate by spaced-apart connections so that the substrate itself provides the high value resistances coupling the elements, but this is not essential. When applied to an IPD RF coupler, the ESD tolerance increased by over 70%. The invented arrangement can also be applied to active devices and integrated circuits and to IPDs with conductive or insulating substrates.

Abstract: A method is provided for transmitting data from a transmitting device (121) to a receiving device (125). The transmitting device transmits a first data frame (200) to a receiving device a first time (3100). Then it consecutively transmits the first data frame to the receiving device second through Nth times (3101-310N), each of second through Nth first data frame transmissions being made a first predetermined time period (350) after a respective previous first data frame transmission. After this, the transmitting device transmits a second data frame (200) to the receiving device a second predetermined time period (360) after the Nth first data frame transmission. In this method, N is an integer greater than 1, and the second predetermined time period is less than the first predetermined time period.

Abstract: A method of transmitting a datum from a time-dependent data storage means, the datum being that most recently acquired before the occurrence of an allocated transmission slot; the method comprising the steps of: writing a first acquired datum to a first side of the data storage means; transferring the first datum to a second side of the data storage means; and writing a next datum, acquired before the occurrence of the next allocated transmission slot, to the first side of the data storage means; wherein the method further comprises the step of: replacing the first acquired datum in the second side of the data storage means with the next acquired datum; and transmitting the next acquired datum from the data storage means at the next allocated transmission slot.