Abstract: A method forms a nonvolatile memory device using a semiconductor substrate. A charge storage layer is formed overlying the semiconductor substrate and a layer of gate material is formed overlying the charge storage layer to form a control gate electrode. A protective layer overlies the layer of gate material. Dopants are implanted into the semiconductor substrate and are self-aligned to the control gate electrode on at least one side of the control gate electrode to form a source and a drain in the semiconductor substrate on opposing sides of the control gate electrode. The protective layer prevents the dopants from penetrating into the control gate electrode. The protective layer that overlies the layer of gate material is removed. Electrical contact is made to the control gate electrode, the source and the drain. In one form a select gate is also provided in the memory device.

Abstract: A flip flop device, a semiconductor integrated circuit, and a method and apparatus for designing a semiconductor integrated circuit that prevents timing violations while preventing the circuit scale from increasing. A flip flop including first, second, and third latch circuits is stored as a standard cell in a cell library of a designing apparatus. The output of the second latch circuit becomes a first output signal of the flip flop. The second latch circuit provides the third latch circuit with a signal generated by latching a data signal with a clock signal. An output of the third latch circuit becomes a second output signal of the flip flop. When an error path having the possibility of a hold time violation is found, output of the flip flop in a former stage is changed from the first output to the second output in the error path.

Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a semiconductor substrate, forming a plurality of discrete storage elements over the first dielectric layer, thermally oxidizing the plurality of discrete storage elements to form a second dielectrics over the plurality of discrete storage elements, and forming a gate electrode over the second dielectric layer, wherein a significant portion of the gate electrode is between pairs of the plurality of discrete storage elements. In one embodiment, portions of the gate electrode is in the spaces between the discrete storage elements and extends to more than half of the depth of the spaces.

Abstract: A device that includes a first memory unit adapted to store encrypted instructions, a processor adapted to execute decrypted instructions, a second memory unit accessible by the processor, and a decryption unit. The device is characterized by including a key database and a key selection circuit, wherein the key selection circuit is adapted to select a selected decryption key from the key database for decrypting encrypted instructions. The selection is responsive to a fixed selection information stored within the integrated circuit and to received key selection information. A method that includes a stage of receiving encrypted instructions; and executing decrypted instructions by a processor. The method is characterized by receiving key selection information, selecting a selected decryption key out of a key database in response to fixed selection information and to the received key selection information, and decrypting encrypted instructions using the selected decryption key.

Abstract: A virtual ground memory array (VGA) is formed by a storage layer over a substrate with a conductive layer over the storage layer. The conductive layer is opened according to a patterned photoresist layer. The openings are implanted to form source/drain lines in the substrate, then filled with a layer of dielectric material. Chemical mechanical polishing (CMP) is then performed until the top of the conductive layer is exposed. This leaves dielectric spacers over the source/drain lines and conductive material between the dielectric spacers. Word lines are then formed over the conductive material and the dielectric spacers. As an alternative, instead of using a conductive layer, a sacrificial layer is used that is removed after the CMP step. After removing the sacrificial portions, the word lines are formed. In both cases, dielectric spacers reduce gate/drain capacitance and the distance from substrate to gate is held constant across the channel.

Abstract: A method of transmitting data to a recipient comprising the steps of dividing the data into a plurality of groups, providing a synchronising means for each of the groups, using the synchronising means to synchronise the data in each group, and transmitting the data to a recipient characterised in that the data is divided in accordance with its synchronisation requirements with the recipient.

Abstract: A method for determining system and software configuration that includes: calculating a power consumption estimate of a modeled system associated with an execution of a certain software code; and altering, in response to the power consumption estimate, the certain software code or the modeled system. A method of determining a power consumption of a system that executed a software code, the method includes the stages of: providing a reduced instruction set representation of the software code; and calculating a power consumption estimate of a modeled system associated with an execution of the reduced instruction set representation of the software code.

Abstract: An antifuse element (102, 152, 252, 302, 352, 402, 602, 652, 702) and method of fabricating the antifuse element, including a substrate material (101) having an active area (106) formed in an upper surface, a gate electrode (104) having at least a portion positioned above the active area (106), and a gate oxide layer (110) disposed between the gate electrode (104) and the active area (106). The gate oxide layer (110) including the fabrication of one of a gate oxide dip (128) or a gate oxide undercut (614). During operation a voltage applied between the gate electrode (104) and the active area (106) creates a current path through the gate oxide layer (110) and a rupture of the gate oxide layer (110) in a rupture region (130). The rupture region (130) defined by the oxide structure and the gate oxide dip (128) or the gate oxide undercut (614).

Abstract: A circuit for use by a multifunction handheld device is coupleable to an audio output device, the multifunction handheld device including a color video display device and a host interface that is coupleable to a host device.

Abstract: A semiconductor package and method of forming the package, including a substrate having an opening formed therein. Contact pads are formed about a periphery of the opening on a first side of the substrate and a second opposing side of the substrate. A flip chip die is mounted to the substrate, having an active side mounted on a first side of the substrate and in electrical communication with at least some of the contact pads formed on the first side of the substrate. At least one wire bond die is mounted through the opening, with a non-active side mounted on the active side of the flip chip die. The wire bond die is in electrical communication with at least some of the plurality of contact pads formed on the second opposing side of the substrate.

Abstract: An amplifier comprises first, second, and third modulators. The first modulator includes an input for receiving a first input signal, and an output for providing a first modulated output signal corresponding to the first input signal. The second modulator includes an input for receiving a second input signal, and an output for providing a second modulated output signal corresponding to the second input signal. The third modulator has an input for receiving a third input signal, and an output for providing a third modulated output signal corresponding to the third input signal and for providing a virtual ground. A first amplifier circuit is coupled to the outputs of the first and third modulators for driving a first load. A second amplifier circuit is coupled to the outputs of the second and third modulators for driving a second load.

Abstract: A data processing system having debugging circuitry and a method for operating the data processing system is provided. In the system, a processor has a cache memory and is coupled to a system bus. An instruction is received which indicates an effective address. The instruction is executed and it is determined if the effective address results in a hit or a miss in the cache. If the effective address results in a hit, data associated with the effective address is provided from the cache to the system bus without modifying a state of the cache. The instruction allows real-time debugging circuits to be able to view the current value of one or more variables in memory that may be hidden from access due to cache hierarchy without modifying the value or impacting the current state of the cache.

Abstract: Methods and corresponding systems for suppressing noise in an input signal include setting a minimum overall gain in a noise reduction processor for processing a first frame of data associated with the input signal. In response to a new minimum overall gain being set, the minimum overall gain in the noise reduction processor is replaced with the new minimum overall gain, and a second frame of data associated with the input signal is processed to suppress noise using the new minimum overall gain. The new minimum overall gain can be a function of the input signal or an output signal of the noise reduction processor. The new minimum overall gain can correspond to a difference between an estimated signal-to-noise ratio (SNR) improvement that is calculated using time-domain data and a target SNR improvement.

Abstract: A method of forming an embedded device build-up package (10) includes forming a first plurality of features (22) over a packaging substrate (12,16,18), wherein the first plurality of features (22) comprises a first feature and a second feature, forming at least a first crack arrest feature (28) in a first crack arrest available region (26), wherein the first crack arrest available region is between the first feature and the second feature, forming a second plurality of features (32) over the first plurality of features (22) wherein the second plurality of features includes a third feature and a fourth feature, and forming at least a second crack arrest feature (36) in a second crack arrest available region (34), wherein the second crack arrest feature (36) is between the third feature and the fourth feature, and the second crack arrest feature (36) is substantially orthogonal to the first crack arrest feature (28).

Abstract: A circuit has a storing portion, a write portion and a read portion. In one embodiment, read portion has a transistor which has a substantially thinner gate oxide than the transistors in the storing portion and the transistors in the write portion. In an alternate embodiment, circuit has a plurality of read ports. In an alternate embodiment, selecting the optimal gate oxide thickness for the transistors in circuit allows the trade-off between transistor switching speed and gate leakage current to be optimized to produce a circuit having a fast enough read access time and a low enough standby power.

Abstract: A method is provided for forming peripheral contacts between a die and a substrate. In accordance with the method, a die (305) is provided which has first and second opposing major surfaces, wherein the first major surface is attached to a substrate (303) having a first group (323) of contact pads disposed thereon, and wherein the second major surface has a second group (311) of contact pads disposed thereon. An electrically conductive pathway (326) is formed between the first and second groups of contacts with an electrically conductive polymeric composition.

Abstract: A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the semiconductor substrate may have a plurality of first and second portions (44, 54). The first portions (44) may have a first thickness, and the second portions (54) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality of second semiconductor regions (42) within the semiconductor substrate may each be positioned at least one of directly below and directly above a respective one of the first portions (44) of the first semiconductor region and laterally between a respective pair of the second portions (54) of the first semiconductor region. A third semiconductor region (56) within the semiconductor substrate may have the first dopant type. A gate electrode (64) may be over at least a portion of the first semiconductor region and at least a portion of the third semiconductor region (56).

Abstract: A level shifter includes a first level shift module for producing a shifted signal by adjusting a direct current (DC) level of an input signal by a first bias voltage having a first polarity. A second level shift module produces an output signal by adjusting a DC level of the shifted signal by a second bias voltage having a second polarity. The first polarity is opposite to the second polarity and the sum of the first bias voltage and the second bias voltage is a non-zero voltage.

Abstract: A storage device structure (10) has two bits of storage per control gate (34) and uses source side injection (SSI) to provide lower programming current. A control gate (34) overlies a drain electrode formed by a doped region (22) that is positioned in a semiconductor substrate (12). Two select gates (49 and 50) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate (34). A source doped region (60) is positioned in the semiconductor substrate (12) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer (42) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.

Abstract: Quad Flat No-Lead (QFN) packages are provided. An embodiment of a QFN package includes a semiconductor chip including an active surface and an inactive surface, a plurality of leads, a plurality of wire bonds configured to couple the plurality of leads to the semiconductor chip, and a mold material including a mounting side and having a perimeter. The active surface is oriented toward the mounting side, the plurality of wire bonds are disposed between the active surface and the mounting side within the mold material, and the plurality of leads are exposed on the mounting side and are at least partially encapsulated within the perimeter of the mold material.