Abstract: An electronic device can include an inductor overlying a shock-absorbing layer. In one aspect, the electronic device can include a substrate, an interconnect level overlying the substrate, and the shock-absorbing layer overlying the interconnect level. The inductor can include conductive traces and looped wires. The conductive traces can be attached to the conductive traces over the shock-absorbing layer. In another aspect, a process can be used to form the electronic device including the inductor. In still another aspect, an electronic device can a toroidal-shaped inductor that includes linear inductor segments that are connected in series.

Abstract: A method of forming a semiconductor device comprises forming a control electrode over a portion of a semiconductor layer, forming recesses extending into the semiconductor layer on opposing sides of the control electrode, and forming doped regions in the semiconductor layer through the recesses. The doped regions form current electrode regions of the semiconductor device and each doped region extends into the semiconductor layer from at least a base of a recess. The method further comprises forming, after forming the doped regions, strained semiconductor regions in the recesses, wherein a junction between each doped region and the semiconductor layer is formed below an interface between a strained semiconductor region and the semiconductor layer.

Abstract: The present invention provides a latch circuit that is operable to generate a pulse from first and second clock signals to allow gates in a datapath to propagate data with minimal latency. The first clock signal is a version of the system clock and the second control signal is a time-shifted, inverted version of the system clock signal. Each of the individual latches in a datapath comprises data propagation logic. In one embodiment of the invention, the data propagation logic uses the first and second clock signals to generate an “implicit” pulse. In another embodiment of the invention, the data propagation logic uses the first and second clock signals to generate an “explicit” pulse. The implicit and explicit pulses are used to control the transmission gate of the latch to provide propagation of data through the latch with minimal latency.

Abstract: A reflective material is heated to reduce internal stress, and then a capping layer is formed over the reflective material. Heating the reflective material reduces the internal stress of the reflective material. Because the reflective material has reduced internal stress, a more continuous, stable and reliable capping layer is formed that is not subject to stress induced degradation over time due to the relaxing internal stress of the underlying reflective material. Thus, the capping layer remains intact and protects the reflective material residing beneath the capping layer from exposure to contaminants.

Abstract: A storage device and methods thereof are disclosed. The device includes a clock control module and a latch. During normal operation, the clock control module provides a periodic clock signal to a clock input of the latch, allowing the latch to operate normally. In a low power mode of operation, the clock control module provides a constant signal to the clock input of the latch so that the latch retains stored data during the low power mode of operation. The storage device can also include a power control module that provides a first power level to the latch in the normal mode of operation and a second power level during the second mode of operation.

Abstract: A method is provided for a master device (601) to allocate channel time. The master device sends a polling frame (240) to a current destination slave device (602) and a current polled slave device (603). The polling frame includes a current destination slave device address (350), a current polled slave device address (360), and a current payload (330). The master device receives a poll acknowledgement frame (280) if the current polled slave device does not wish to transmit data. However, if no poll acknowledgement frame is received, the master device waits for a set duration then sets the current destination device address to be equal to a new destination device address, sets the current polled device address to be equal to a new polled slave device address, and sets a current payload to be equal to a new payload. This can be repeated until a channel time allocation ends.

Abstract: A system having voltage level shifting capabilities, the system includes a logic circuit and a multiple level voltage supply circuit; wherein the logic circuit comprises at least one PMOS transistor and at least one NMOS transistor; wherein the logic circuit receives an input signal, receives a voltage supply signal from the multiple level voltage supply circuit, and outputs an output signal via a first node; wherein the input signal has a low voltage swing between a low level supply voltage and a rail voltage; wherein the output signal has a high voltage swing between a high level supply voltage and the rail voltage; and wherein the multiple level voltage supply circuit selects, in response to a level of the output signal, whether to provide to the supply node of the logic circuit a high level supply voltage or a low level supply voltage.

Abstract: A method is provided for operating a transceiver that comprises: transmitting a preamble; transmitting an outer header identifying parameters of an outer payload, after transmitting the preamble; and transmitting the outer payload after transmitting the outer header. The transmitting of the outer payload includes: transmitting an inner header identifying parameters of an inner payload; transmitting an inner payload after transmitting the inner header; and repeating the transmitting of the inner header and the transmitting of the inner payload a plurality of times. A corresponding method of operating a receiver functions by receiving each of these transmitted elements.

Abstract: A memory cell is implemented using a semiconductor fin in which the channel region is along a sidewall of the fin between source and drains regions. One portion of the channel region has a select gate adjacent to it and another other portion has the control gate adjacent to it with a charge storage structure there between. In some embodiments, independent control gate structures are located adjacent opposite sidewalls of the fin so as to implement two memory cells.

Abstract: A method for forming a semiconductor device includes forming a gate dielectric over a substrate, forming a metal electrode over the gate dielectric, forming a first sacrificial layer which includes polysilicon or a metal over the metal electrode, removing the first sacrificial layer, and forming a gate electrode contact over and coupled to the metal electrode.

Abstract: A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.

Abstract: A method for forming a semiconductor device includes forming a recess in a source region and a recess in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer in the recess in the source region and a second semiconductor material layer in the recess in the drain region, wherein each of the first semiconductor material layer and the second semiconductor material layer are formed using a stressor material having a first ratio of an atomic concentration of a first element and an atomic concentration of a second element, wherein the first element is silicon and a first level of concentration of a doping material. The method further includes forming additional semiconductor material layers overlying the first semiconductor material layer and the second semiconductor material layer that have a different ratio of the atomic concentration of the first element and the second element.

Abstract: A test method determines if an array of a Flash EEPROM circuit has a bit cell with a transconductance (gm) that is deficient. The method preconditions all bit cells of the array to a particular programmed state and then determines whether any of the bit cells exhibit undesirable operating characteristics by reading each bit cell to determine whether its transconductance is less than desirable.

Abstract: A semiconductor fabrication method includes forming a gate module overlying a substrate. Recesses are etched in the substrate using the gate module as a mask. A barrier layer is deposited over the wafer and anisotropically etched to form barrier “curtains” on sidewalls of the source/drain recesses. A metal layer is deposited wherein the metal layer contacts a semiconductor within the recess. The wafer is annealed to form a silicide selectively. The diffusivity of the metal with respect to the barrier structure material is an order of magnitude less than the diffusivity of the metal with respect to the semiconductor material. The etched recesses may include re-entrant sidewalls. The metal layer may be a nickel layer and the barrier layer may be a titanium nitride layer. Silicon or silicon germanium epitaxial structures may be formed in the recesses overlying the semiconductor substrate.

Abstract: A semiconductor process and apparatus provide a shallow trench isolation region (96) with a trench liner (95, 104) for use in a hybrid substrate device (21) by lining a first trench with a first trench liner (95), and then lining a second trench formed within the first trench by depositing a second trench liner (104) that is anisotropically etched to expose an underlying substrate (70) on which is epitaxially grown a silicon layer (110) to fill the second trench. By forming first gate electrodes (251) over a first SOI substrate (90) using deposited (100) silicon and forming second gate electrodes (261) over an epitaxially grown (110) silicon substrate (110), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (261) having improved hole mobility.

Abstract: A semiconductor process and apparatus provide a polysilicon structure (10) and source/drain regions (12, 14) formed adjacent thereto in which a dual silicide scheme is used to form first silicide regions in the polysilicon, source and drain regions (30, 32, 34) using a first metal (e.g., cobalt). After forming sidewall spacers (40, 42), a second metal (e.g., nickel) is used to form second silicide regions in the polysilicon, source and drain regions (60, 62, 64) to reduce encroachment by the second silicide in the source/drain (62, 64) and to reduce resistance in the polysilicon structure caused by agglomeration and voiding from the first silicide (30).

Abstract: A method for pipelining a memory in an integrated circuit includes providing a first clock phase and providing a second clock phase, wherein the first clock phase and the second clock phase are at least partially non-overlapping. The method further includes providing a first memory array and providing a second memory array, wherein the second memory array shares a wordline with the first memory array. The method further includes using said wordline to select at least one row of the first memory array during the first clock phase. The method further includes using said wordline to select at least one row of the second memory array during the second clock phase.

Abstract: A method and an apparatus for controlling voltage level and clock signal frequency supplied to a system. The apparatus includes a hardware module, adapted to receive at least one indication of a load of the system and to determine a voltage level and a clock signal frequency to be provided to the system, and a software module, adapted to configure a voltage source and a clock signal source in response to the determination. The method includes: (i) receiving, at a hardware module, indication of a load of a system; (ii) determining, by the hardware module, a voltage level and a clock signal frequency to be provided to the system; and (iii) configuring, by a software module, a voltage source and a clock signal source in response to the determination.

Abstract: A semiconductor device having upright dielectric nanotubes at an inter-layer dielectric level and method of manufacturing such a device is disclosed. The use of a catalyst is proposed in the disclosed manufacturing flow that facilitates growth of upright dielectric nanotubes having ultra low-k values that form all or part of the dielectric material for an ILD. In one embodiment, carbon nanotubes form interlayer conducting vias. In another embodiment dielectric material nanotubes form reinforcing pillars. The integration of catalysts is proposed to accommodate both upright dielectric and upright conducting nanotube fabrication in the same layer.

Abstract: One embodiment relates to a data processing system having a cryptographic unit. The cryptographic unit includes cryptographic circuitry which performs a first cryptographic function to provide security for a portion of the cryptographic unit, and which performs a second cryptographic function to provide security for a portion of the data processing system external to the cryptographic unit. The cryptographic unit may therefore operate in a normal operating mode and in a secure operating mode. During a first secure operating mode a first key is used to decrypt first security configuration information which includes a second key. During a second secure operating mode, the second key is used to decrypt second security configuration information. The cryptographic unit may include a secure internal memory such that during the secure operating modes, the cryptographic unit may only process descriptors provided from this secure internal memory.