Abstract: A leadframe (40) for a semiconductor device has a radially extending leads (42) having inner lead portions (44) and outer lead portions (46), and a dam bar (48) that mechanically connects the leads (42) together near the outer lead portions (46). The inner lead portions (44) define an open area having a central region and the dam bar (48) defines a leadframe outer perimeter. A generally X-shaped die support member has arms (50) that extend from the leadframe outer perimeter and meet at the central region. A heat sink includes sections (64) that are formed between adjacent pairs of the die support member arms (50). The heat sink sections (64) are connected to the die support member arms (50) with down set tie bars (66) such that the heat sink lays in a plane below a plane of the die support member arms (50).

Abstract: A frequency modulated output of a Digital Locked Loop (DLL) is implemented with a Johnson Counter outputting a sample clock and a synchronized digital code at a multiple of the sample clock. The digital code drives a digital-to-analog converter to generate a frequency modulated control signal. The control signal is summed with the center frequency control from the digital locked loop digital filter to provide a frequency modulated center frequency control signal to the DLL oscillator.

Abstract: A device that includes at least one memory unit adapted to store image data; the device is characterized by including a configurable filter adapted to apply de-ringing filtering and de-blocking filtering such as to filter image data retrieved from the at least one memory unit, whereas the device is adapted to repetitively determine a configuration of the configurable filter in response to received image data and to at least one mode selection rule and to configure the configurable filter in response to the determination.

Abstract: An acceleration sensor arrangement comprises, in one package, an acceleration threshold detector for detecting acceleration and for providing an output signal and a processor circuit for receiving the output signal. The acceleration threshold detector provides an output signal having a first value when the acceleration is less than a predetermined threshold and is arranged to switch the output signal from the first value to a second value when the acceleration reaches the predetermined threshold. The processor circuit generates an event signal to trigger an event, such as the closing of a safing transistor switch in an airbag system, in response to the output signal from the acceleration threshold detector switching to the second value.

Abstract: A decoding circuit includes a mixed modulation memory access circuit responsive to burst rejection information. The mixed modulation memory access circuit selectively accesses burst memory locations containing a valid burst of coded bits. The mixed modulation memory access circuit selectively avoids accessing burst memory locations containing a rejected burst of coded bits based on the burst rejection information. In one example, the mixed modulation memory access circuit accesses the valid burst when the burst rejection information indicates that the memory location contains valid bursts. In one example, the mixed modulation memory access circuit generates zero confidence information when the burst rejection information indicates that the memory location contains rejected bursts.

Abstract: A method for forming a semiconductor device includes providing a substrate region having a first material and a second material overlying the first material, wherein the first material has a different lattice constant from a lattice constant of the second material. The method further includes etching a first opening on a first side of a gate and etching a second opening on a second side of the gate. The method further includes creating a first in-situ p-type doped epitaxial region in the first opening and the second opening, wherein the first in-situ doped epitaxial region is created using the second material. The method further includes creating a second in-situ n-type doped expitaxial region overlying the first in-situ p-type doped epitaxial region in the first opening and the second opening, wherein the second in-situ n-type doped epitaxial region is created using the second material.

Abstract: A multi-bit split-gate memory device is formed over a substrate. A storage layer is formed over the substrate. A first conductive layer is formed over the storage layer. A thickness of a portion of the conductive layer is removed to leave a pillar of the conductive layer and an area of reduced thickness of the conductive layer. A first sidewall spacer is formed adjacent to the pillar to cover a first portion and a second portion of the area of reduced thickness of the conductive layer. The pillar is replaced with a select gate. The area of reduced thickness is selectively removed to leave the first and second portions as control gates.

Abstract: A dual mode voltage supply circuit (50) includes an active mode voltage supply circuit (58) and a passive mode voltage supply circuit (60). The active mode voltage supply circuit (58) is selectively operative to supply a voltage (57) based on mode control information (22). The active mode voltage supply circuit (58) is operative to provide a first current capacity. The passive mode voltage supply circuit (60) is operatively coupled to the active mode voltage supply circuit (58). The passive mode voltage supply circuit (60) is operative to supply the voltage (57) when the active mode voltage supply circuit (58) is not supplying the voltage (57). The passive mode voltage supply circuit (60) is operative to provide a second current capacity that is less than the first current capacity.

Abstract: A circuit includes a micro electro mechanical switch and a detection circuit. The micro electro mechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact in response to an electrostatic force provided by a top activation electrode and a bottom activation electrode. The detection circuit is electrically coupled to the top and bottom activation electrodes and is for detecting a first capacitance value between the top and bottom activation electrodes when the movable portion is in a first position and for detecting a second capacitance value when the movable portion is in a second position. By detecting a change in the capacitance, it can be determined if the switch is open or closed.

Abstract: A maximum timeout time for a communication between devices is determined. A time period is determined for a plurality of time zones based upon the maximum timeout time. A current time zone is updated every time period. A timeout zone for an outstanding transaction is associated with a first time zone to indicate when the outstanding transaction will timeout if not completed. In one embodiment, the time period for each time zone is approximately equal to the maximum timeout period divided by a predetermined number of time zones, which may be the total number of time zones, e.g. eight or sixteen.

Abstract: A stacked die system (10) has a first die (16) having a first surface with active circuitry, a second die (18) having a first surface with active circuitry, and a conductive shield (28) interposed between the first surface of the first die and the first surface of the second die. In one embodiment, the distance between the first surfaces of the first and second die is less than one millimeter. The stacked die system may also include a package substrate (12) where the active circuitry of the first and second die are electrically connected to the package substrate. The electrical connections may be formed using wire bonds (56, 58, 60, 62). Alternatively, the first die may be connected to the package substrate in a flip chip configuration. In one embodiment, the active circuitry of the first die generates RF signals where the shield helps protect the RF signals from interference caused by the active circuitry of the second die.

Abstract: A strained semiconductor layer is achieved by a method for transferring stress from a dielectric layer to a semiconductor layer. The method comprises providing a substrate having a semiconductor layer. A dielectric layer having a stress is formed over the semiconductor layer. A radiation anneal is applied over the dielectric layer of a duration not exceeding 10 milliseconds to cause the stress of the dielectric layer to create a stress in the semiconductor layer. The dielectric layer may then be removed. At least a portion of the stress in the semiconductor layer remains in the semiconductor layer after the dielectric layer is removed. The radiation anneal can be either by using either a laser beam or a flash tool. The radiation anneal can also be used to activate source/drain regions.

Abstract: In one form a circuit has a bias stage having an input signal terminal for receiving an input signal. The circuit modifies the input signal with a drive stage to provide an output signal in complement form. A drive transistor in the drive stage of the circuit has a bulk that is connected to a terminal of a load and to a control electrode coupled to the input signal terminal. A bias transistor in the bias stage of the circuit has a bulk that is directly connected to the terminal of the load and to the bulk of the drive transistor. The bias transistor has a control electrode coupled to the input signal terminal. The input signal biases the bulks of the drive transistor and the bias transistor and reduces transistor threshold voltage. Linearity of circuit output impedance is improved and RF interference reduced. Lower voltage operation is also provided.

Abstract: A decoder comprising a decoding element arranged to operate in a first mode for decoding a turbo encoded data stream and in a second mode for decoding a viterbi encoded data stream, wherein the decoding element is responsive to a first control signal for switching from the first mode to the second mode during decoding of a turbo code block and responsive to a second control signal for switching from the second mode to the first mode to allow continued decoding of the turbo code block.

Abstract: A method of and apparatus for testing a floating gate non-volatile memory semiconductor device comprising an array of cells including floating gates for storing data in the form of electrical charge. The method includes applying a test pattern of said electrical charge to the floating gates, exposing the device to energy to accelerate leakage of the electrical charges out of the cells, and subsequently comparing the remaining electrical charges in the cells to the test pattern. The energy is applied in the form of electromagnetic radiation of a wavelength such as to excite the charges in the floating gates to an energy level sufficient for accelerating charge loss from the floating gates of defective cells relative to charge loss from non-defective cells. The wavelength is preferably in the range of 440 to 560 nm.

Abstract: A power semiconductor device comprising an array of cells distributed over a surface of a substrate, the source regions of the individual cells of the array comprising a plurality of source region branches each extending laterally outwards towards at least one source region branch of an adjacent cell and presenting juxtaposed ends, the base regions of the individual cells of the array comprising a corresponding plurality of base region branches merging together adjacent and between the juxtaposed ends of the source region branches to form a single base region surrounding the source regions of the individual cells of the array in the substrate. The junctions between the merged base region and the drain region are solely concave laterally and define rounded current conduction path areas for the on-state of the device between adjacent cells that are depleted in the off-state of the device to block flow of current from the source regions to the drain electrode.

Abstract: A power amplifier module comprises a power amplifier circuit having an output power level controlled by a power supply voltage. A power supply transistor controls the power supply to the power amplifier circuit from a drive signal which is received from a drive circuit. The drive circuit generates the drive signal in response to a power level input signal, which specifically may correspond to a power ramping for a GSM cellular communication system. The power amplifier module furthermore comprises a detection circuit which determines an operating characteristic of the power supply transistor. The operating characteristic is preferably a saturation characteristic. A control circuit controls the drive signal in response to the operating characteristic. The control circuit preferably controls the drive signal such that the power supply transistor does not enter the linear region for a Field Effect Transistor and the saturated region for a bipolar transistor.

Abstract: A method is for packaging a first device having a first major surface and a second major surface. An encapsulant is formed over a second major surface of the first device and around sides of the first device. This leaves the first major surface of the first device exposed. A first dielectric layer is formed over the first major surface of the first device. a side contact interface is formed having at least a portion over the first dielectric layer. The encapsulant is cut to form a plurality of sides of encapsulant. A portion of the encapsulant is removed along a first side of the plurality of sides to expose a portion of the side contact interface along the first side of the plurality of sides.

Abstract: In one embodiment, semiconductor device 10 comprises a diode which uses isolation regions (34, 16, and 13) and a plurality of dopant concentrations (30, 20, 24, and 26) which may be used to limit the parasitic current that is injected into the semiconductor substrate (12). Various biases on the isolation regions (34, 16, and 13) may be used to affect the behavior of semiconductor device (10). In addition, a conductive layer (28) may be formed overlying the junction between anode (42) and cathode (40). This conductive layer (28) may decrease the electric field in selected regions in order to increase the maximum voltage that may be applied to cathode (40).

Abstract: An H-bridge drive circuit for reducing switching noises while preventing shoot-through current from flowing in the H-bridge circuit. The H-bridge drive circuit includes an H-bridge circuit for driving a load with a first power supply and a lower voltage second power supply. The H-bridge circuit includes first to fourth transistors. The first and third transistors are connected to the first power supply. The second transistor is connected between the first transistor and the second power supply, and the fourth transistor is connected between the third transistor and the second power supply. The load is connected to a node between the first and the second transistors and a node between the third and the fourth transistors. A control circuit switches the activation and inactivation of the first to fourth transistors so as to maintain at least either one of the second and fourth transistor in an activated state.