Abstract: A microcontroller operable in a high power mode and a low power unit (LPU) run mode includes primary and LPU domains, primary and LPU mode controllers, and primary and LPU clock generator modules. The primary domain includes a first set of circuits and a first set of cores. The LPU domain includes second and third sets of circuits, a second set of cores, and a switching module. In the high power mode, the switching module connects the first and second sets of cores to at least one of the first, second and third sets of circuits, while in the LPU run mode, the switching module isolates the LPU domain from the primary domain and activates a small microcontroller system (SMS) that includes the LPU domain, the LPU mode controller and the LPU clock generator module. The SMS has further low power modes within the LPU run mode.

Abstract: First and second semiconductor die are mounted to first and second die pads of a lead frame disposed in a lead frame sheet. With a plurality of wire bonds, each post of a plurality of posts of the lead frame is connected to the first and second semiconductor die. Each post extends inward from opposite sides of the lead frame between the first and second die pads and is connected with a respective one of a plurality of leads of the lead frame. The first and second semiconductor die, the plurality of posts of the lead frame, and the plurality of wire bonds are encapsulated in a package. The lead frame sheet is sheared to define each lead of the plurality of leads. The plurality of posts includes first and second sets of posts extending inward from first and second opposite sides of the lead frame.

Abstract: A temperature coefficient factor circuit is provided which generates a current which varies with temperature according to a programmable temperature coefficient factor. The temperature coefficient factor circuit comprises a first current source providing a first current with a positive temperature coefficient factor, a second current source providing a second current with a negative temperature coefficient factor, a common terminal, a first programmable amplifying current mirror, a second programmable amplifying current mirror and a current output circuit. The first programmable amplifying current mirror provides in dependence of a control signal ctrl an amplified first current to the common terminal. The second programmable amplifying current mirror conducts away in dependence of the control signal ctrl an amplified second current from the common terminal. The current output circuit provides the output current based on a difference current between the amplified first current and the amplified second current.

Abstract: A system for managing data packets has multiple cores, a data buffer, a hardware accelerator, and an interrupt controller. The interrupt controller transmits a first interrupt signal to a first one of the cores based on a first hardware signal received from the hardware accelerator. The first core creates a copy of buffer descriptors (BD) of a buffer descriptor ring that correspond to the data packets in the data buffer in a first virtual queue and indicates to the hardware accelerator that the data packets are processed. If there are additional data packets, the interrupt controller transmits a second interrupt signal to a second core, which performs the same steps as performed by the first core. The first and the second cores simultaneously process the data packets associated with the BDs in the first and second virtual queues, respectively.

Abstract: A wafer level packaging method entails providing electronic devices and providing a platform structure having cavities extending through the platform structure. The platform structure is mounted to a temporary support. One or more electronic devices are placed in the cavities with an active side of each electronic device facing the temporary support. The platform structure and the electronic devices are encapsulated in an encapsulation material to produce a panel assembly. Redistribution layers may be formed over the panel assembly, after which the panel assembly may be separated into a plurality of integrated electronic packages. The platform structure may be formed from a semiconductor material, and platform segments within each package provide a fan-out region for conductive interconnects, as well as provide a platform for a metallization layer and/or for forming through silicon vias.

Abstract: A method and apparatus are provided for error correction of a memory by using a first memory (18), second memory (14), and redundant memory (19) to perform error correction code (ECC) processing on data retrieved from the first memory (18) by using the redundant memory (19) to replace entries in the second memory (14) having repeat addresses, thereby freeing entries in the second memory (14) for use in detecting and managing errors identified by the ECC processing.

Abstract: A semiconductor device includes, in various embodiments, a memory and a processor, with the processor configured to perform a permission check prior to execution of a memory-access instruction. The permission check comprises evaluating a permission attribute of the memory-access instruction and a permission attribute of a memory location to be accessed. The memory-access instruction is denied unless the permission attribute of the memory-access instruction is compatible with the permission attribute of the memory location to be accessed. In various embodiments, permission attributes are obtained by the processor from a one-time-programmable (OTP) memory module. In various embodiments, the permission attributes are determined based on a source address of the memory-access instruction and an address of the memory location to be accessed. In various embodiments, the OTP memory module stores permission settings that are based on the identity of suppliers for various portions of code stored in the memory.

Abstract: A method and apparatus automatically controls the insertion of information flow data over a shared CPRI link (561) by providing a hardware control mechanism (504-509) at a local radio base station subsystem (501) connected in a CPRI daisy chain configuration between a downstream RE device (570) and an upstream REC device (560) for determining whether the control word being transmitted is sourced from a downstream device (e.g., forwarded data from a downstream RE device) or from the local device.

Abstract: Methods and systems are disclosed for code protection in non-volatile memory (NVM) systems. Information stored within NVM memory sectors, such as boot code or other code blocks, is protected using lockout codes and lockout keys written in program-once memory areas within the NVM systems. Further, lockout codes can be combined into a merged lockout code that can be stored in a merged protection register. The merged protection register is used to control write access to protected memory sectors. Lockout code/key pairs are written to the program-once area when a memory sector is protected. The program-once area, which stores the lockout code/key pairs, is not readable by external users. Once protected, a memory sector can not be updated without the lockout code/key pair.

Abstract: The embodiments described herein provide a radio frequency (RF) driver amplifier and method of operation. In general, the driver amplifier facilitates high performance operation in RF devices while being implemented with only n-type transistors. Using only n-type transistors in the driver amplifier can increase the operating bandwidth of the driver amplifier. Furthermore, using only n-type transistors in the driver amplifier can simplify device fabrication. The driver amplifiers and methods described herein can be used in a variety of applications. As one specific example the driver amplifier can be used in a switch-mode power amplifier (SMPA). Such a SMPA can be configured to amplify a time varying signal, such as an RF.

Abstract: A semiconductor device comprises a first contact layer, a first drift layer adjacent the first contact layer, a buried body layer adjacent the first drift layer and a second contact layer. A first vertical trench and a second vertical trench are provided, the first and second vertical trenches being spaced with respect to each other and extending from the second contact layer to substantially beyond the buried body layer. A second drift layer is also provided and sandwiched between the buried body layer and the second contact layer.

Abstract: A system for determining a temperature of a first portion of an engine, and related circuit, and related method of operation, are disclosed. In one example embodiment, the system includes a wheel having a plurality of magnetic teeth, and an electrical circuit including a variable reluctance sensor (VRS) including at least one winding, the VRS being positioned proximate the wheel, where the VRS is in thermal contact with the first portion, and a comparator having first and second input terminals and an output terminal, where the comparator is configured to output an output signal at the output terminal. Either the output signal or a further signal generated by the electrical circuit is at least indirectly indicative of a resistance of the at least one winding, whereby an indication of the temperature of the first portion can be determined based upon the output signal or further signal.

Abstract: A data processing device for executing a program is described. The program comprises one or more instruction groups and one or more predicates, each instruction group comprising one or more instructions. The data processing device comprises a processing unit and a trace unit connected to or integrated in the processing unit. The trace unit generates a predicate trace for tracing the values of the one or more predicates. The processing unit executes, in each of a series of execution periods, one of the instruction groups and updated the values of none, one, or more of the predicates in dependence on the respective instruction group. The trace unit appends the updated values of the none, one, or more predicates to the predicate trace and does not append any non-updated values of the predicates. A method of reporting predicate values and a data carrier are also disclosed.

Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.

Abstract: A memory system includes a memory and a built-in self-test (BIST) unit coupled to the memory. The BIST unit is configured to run a test pattern on the memory to accumulate a fault signature, and store fault signature information based on the accumulated fault signature at multiple locations in the memory.

Abstract: The embodiments described herein provide a semiconductor device layout and method that can be utilized in a wide variety of semiconductor devices. In one embodiment a semiconductor device is provided that includes a plurality of deep trench isolation structures that define and surround a first plurality of first trench-isolated regions in the substrate, and further define a second plurality of second trench-isolated regions in the substrate. The first plurality of first trench-isolated regions is arranged in a plurality of first columns, with each of the first columns including at least two of the first plurality of first trench-isolated regions. Likewise, the plurality of first columns are interleaved with the second trench-isolated regions to alternate in an array such that a second trench-isolated region is between consecutive first columns in the array and such that at least two first trench-isolated regions are between consecutive second trench-isolated regions in the array.

Abstract: A technique for detecting symbols includes performing an over-sized discrete Fourier transform (DFT) operation on a received signal that includes at least two repeated symbols. A sum of signal characteristics for subcarriers of one or more possible symbols are determined based on the DFT operation. A sum of signal characteristics for non-subcarriers of the one or more possible symbols is determined based on the DFT operation. Finally, a determination is made as to whether one or more of the one or more possible symbols is detected based on the sum of signal characteristics for the subcarriers and sum of signal characteristics for the non-subcarriers.

Abstract: An integrated circuit (IC) includes a digital-to-analog converter (DAC), a voltage monitoring circuit, and a controller. The voltage monitoring circuit includes low voltage detect (LVD) and low voltage warning (LVW) circuits that generate LVD and LVW reference voltage signals. The controller generates and stores a voltage margin word (a difference between first and second DAC words that correspond to the LVD and LVW reference voltage signals, respectively). The controller compares the voltage margin word with predetermined maximum and minimum voltage margin words. If the voltage margin word does not lie between the predetermined maximum and minimum voltage margin words, the controller generates a voltage trimming signal that scales the LVW reference voltage signal. After scaling, if the voltage margin word lies between the predetermined maximum and minimum voltage margin words, the controller generates a calibration pass signal, otherwise the controller generates a calibration fail signal.

Abstract: An integrated antenna package includes an interposer, an integrated circuit die, and a cap that forms a cavity within the integrated antenna package. A lossy ERG structure resides at the cap overlying the integrated circuit device. A lossless EBG structure resides at the cap overlying a microstrip feedline. A radar module includes a plurality of receive portions, each receive portion including a parabolic structure having a reflective surface, an absorber structure, a lens, and an antenna.

Abstract: A method of erasing a plurality of non-volatile memory (NVM) cells on a die includes applying erase signals to the plurality of NVM cells. A subset of the plurality of NVM cells is identified to be soft programmed. Information is identified from a non-volatile storage location that stores a value to identify a particular magnitude from a plurality of possible magnitudes of a starting voltage. A soft program signal is applied to the NVM cells identified for soft programming, wherein the starting voltage of the soft program signal has the particular magnitude.