Abstract: Methods and a device for performing coherent access requests are disclosed. The methods include receiving a first address associated with a first write or read request. During a write operation, if the first address is associated with a coherent access register, data to be written is stored at a data latch that is connected to a plurality of coherent data access registers. A second address and second data associated with a second write request are received. If the second address matches the first address, the second data and the latched first data are written to the coherent access register. By latching the first data and simultaneously writing the latched first data and the second data, overall coherency of the written data is maintained.

Abstract: A method and device for processing direct memory access transfer requests is disclosed. The method includes executing a first transfer request associated with a channel of a DMA device, and determining if the next transfer request is associated with the same channel. If the next transfer request is associated with a different channel, the DMA device executes an arbitration process to determine the priority of the second transfer request relative to other pending transfer requests. If the next transfer request is associated with the same channel as the first transfer request, the DMA device executes the next transfer request without executing the normal arbitration process. By foregoing execution of the arbitration process when two transfer requests are associated with the same channel, the DMA device is able to begin execution of the transfer requests more quickly.

Abstract: A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator.

Abstract: A multi-mode analog-to-digital converter includes a delta-sigma analog-to-digital converter circuit configured to receive the analog input and produce a digital bit-stream associated therewith, the delta-sigma analog-to-digital converter including at least one integrator configured to reset to an initial state in response to a reset signal A digital filter circuit is configured to receive the digital bit-stream and produce two filtered outputs derived from the digital bit-stream. During one mode (e.g., a DC mode) the delta-sigma analog-to-digital converter circuit is configured to receive the reset signal and produce the digital bit-stream for a predetermined number of clock cycles, and the digital output corresponds to the first filtered output. In another mode (e.g., an AC mode), the delta-sigma analog-to-digital converter is configured to continuously produce the bit-stream, and the digital output corresponds to the second filtered output.

Abstract: A method of making a stacked die package (39) includes placing a first flip chip die (16) on a base carrier (12) and electrically connecting the first flip chip die (16) to the base carrier (12). A second flip chip die (18) is attached back-to-back to the first flip chip die (16) and electrically connected to the base carrier (12) with a plurality of insulated wires (20). A mold compound (36) is formed over the first and second dice and one surface of the base carrier.

Abstract: A method for forming a semiconductor device includes providing a first integrated circuit having a landing pad and attaching a second integrated circuit to the first integrated circuit using at least one bonding layer. The second integrated circuit has an inter-circuit trace, the inter-circuit trace has an inter-circuit trace opening. The method further includes forming an opening through the second integrated circuit, the opening extending through the inter-circuit trace opening, forming a selective barrier on exposed portions of the inter-circuit trace in the opening, extending the opening through the at least one bonding layer to the landing pad, and filling the opening with a conductive fill material. The selective barrier layer comprises at least one of cobalt or nickel, and the conductive fill material electrically connects the inter-circuit trace and the landing pad.

Abstract: A semiconductor process and apparatus provide a planarized hybrid substrate (225) having a more uniform polish surface (300) by thickening an SOI semiconductor layer (210) in relation to a previously or subsequently formed epitaxial silicon layer (220) with a selective silicon deposition process that covers the SOI semiconductor layer (210) with a crystalline semiconductor layer (216). By forming first gate electrodes (151) over a first SOI substrate (90) using deposited (100) silicon and forming second gate electrodes (161) over an epitaxially grown (110) silicon substrate (70), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (161) having improved hole mobility.

Abstract: Methods and apparatus are provided for TMOS devices, comprising multiple N-type source regions, electrically in parallel, located in multiple P-body regions separated by N-type JFET regions at a first surface. The gate overlies the body channel regions and the JFET region lying between the body regions. The JFET region communicates with an underlying drain region via an N-epi region. Ion implantation and heat treatment are used to tailor the net active doping concentration Nd in the JFET region of length Lacc and net active doping concentration Na in the P-body regions of length Lbody so that a charge balance relationship (Lbody*Na)=k1*(Lacc*Nd) between P-body and JFET regions is satisfied, where k1 is about 0.6?k1?1.4. The entire device can be fabricated using planar technology and the charge balanced regions need not extend through the underlying N-epi region to the drain.

Abstract: A patterned reflective semiconductor mask uses a multiple layer ARC overlying an absorber stack that overlies a reflective substrate. The absorber stack has more than one layer and an upper layer of the absorber stack has a predetermined metal. The multiple layer ARC overlying the upper layer of the absorber stack has layers of nitrogen, oxygen and nitrogen combined with the predetermined metal of the upper layer of the absorber stack. The oxygen layer in the ARC has less metallic properties than the nitrogen layers therein. In one form, an overlying dielectric layer is positioned on the multiple layer ARC to increase light interference. The ARC provides wide bandwidth inspection contrast for extreme ultra-violet (EUV) reticles.

Abstract: A storage device has a two bit cell in which the select electrode is nearest the channel between two storage layers. Individual control electrodes are over individual storage layers. Adjacent cells are separated by a doped region that is shared between the adjacent cells. The doped region is formed by an implant in which the select gates of adjacent cells are used as a mask. This structure provides for reduced area while retaining the ability to perform programming by source side injection.

Abstract: An output match circuit is coupled between the terminal of a high-frequency device and a ground terminal. The output match circuit includes an LC shunt and an LC notch serially coupled to the LC shunt, wherein the LC notch includes a resonant capacitive element in series with a resonant inductive element. The LC notch may simply include a resonant inductive element coupled directly to the ground terminal. The series inductive element may have a terminal coupled between the resonant capacitive element and the resonant inductive element.

Abstract: A method and system for transmitting binary-coded data use partitioning of data words in a plurality of data nibbles. The data nibbles are coded using modified a 1-bit hot coding format that transforms a data nibble in a data segment including a plurality of bit groups. A change in a digital state at a bit position in a more significant bit group is maintained at that bit position in less significant bit groups, and information is transmitted in a form of a transition between digital states. The data segments are transmitted in phases each including one bit group from each data segment. At a receiving terminal, the bit groups are converted back in the binary-coded data words. In one application, the invention is used to reduce power consumption during data transmissions to and from an integrated circuit device.

Abstract: An integrated circuit has a semiconductor substrate and an interconnect layer that mechanically relatively weak and susceptible to cracks and delamination. In the formation of the integrated circuit from a semiconductor wafer, a cut is made through the interconnect layer to form an edge of the interconnect layer. This cut may continue completely through the wafer thickness or stop short of doing so. In either case, after cutting through the interconnect layer, a reconditioning layer is formed on the edge of the interconnect layer. This reconditioning layer seals the existing cracks and delaminations and inhibits the further delamination or cracking of the interconnect layer. The sealing layer may be formed, for example, before the cut through the wafer, after the cut through the wafer but before any packaging, or after performing wirebonding between the interconnect layer and an integrated circuit package.

Abstract: In a data processing system a processor including processing logic performs data processing. An address translator that is coupled to the processing logic performs address translation and a method thereof. The address translator receives a logical address and converts the logical address to both a physical address and one or more address attributes. Bypass circuitry that is coupled to the address translator selectively provides the logical address as a translated address of the logical address which was received. In order to speed up the memory address translation, the logical address is selectively provided as the translated address prior to providing the one or more address attributes associated with the logical address.

Abstract: A MIM capacitor is formed over one or more metal interconnect layers in a semiconductor device. The capacitor has a lower plate electrode and an upper plate electrode. An insulator is formed between the plate electrodes. Prior to forming the first plate electrode a first insulating layer is deposited over the metal of an interconnect layer. The first insulating layer is planarized using a chemical mechanical polish (CMP) process. A second insulating layer is then deposited over the planarized first insulating layer. The first plate electrode is formed over the second insulating layer. An insulator is formed over the first plate electrode and functions as the capacitor dielectric. A second plate electrode is formed over the insulator. Planarizing the first insulating layer and depositing a second insulating layer over the first insulating layer, reduces defects and produces a more reliable capacitor.

Abstract: A receiver architecture for receiving an FSK signal having a predetermined number of modulation levels includes a selectivity filter (206) for selectively passing a wanted channel and rejecting unwanted channels. The selectivity filter has a filter bandwidth of about one-half the bandwidth of a pre-modulation filter in a transmitter sending the FSK signal. A discriminator (208) is coupled to the selectivity filter for demodulating the signal. A symbol recovery processor (210) is coupled to the discriminator for recovering the symbols through a maximum likelihood sequence estimation (MLSE) technique utilizing N states for each symbol time, wherein N equals the predetermined number of modulation levels, and wherein templates used in the MLSE for symbol transitions are optimized with a bandwidth substantially less than the bandwidth of the pre-modulation filter.

Abstract: A system-on-chip (100) includes a 16-bit DSP (102), a 16-bit data bus (202) coupled to the DSP, at least one 32-bit-only peripheral (110), a 32-bit data bus (212) coupled to the peripheral, and a bridge (108), including a write merge system (200), coupled between the 16-bit and 32-bit buses. A method of the write merge system includes pre-storing addresses of peripherals in a memory map structure (220 and 221), receiving 16-bit data and a write transaction from the DSP for modifying sixteen bits of a 32-bit data location of the peripheral; reading 32-bit contents of the data location of the peripheral; multiplexing the received 16-bit data with the read 32-bit contents; and writing a new 32-bit word, including the modified sixteen bits and an unmodified sixteen bits, to the data location of the peripheral, without any intervention from the DSP subsequent to receiving the write transaction.

Abstract: A method is provided for training a rake finger (200). In this method the rake finger receives a data signal including a plurality of signal components having a plurality of signal phase values, respectively. (620). The rake finger then sets a current acquisition phase for a locally-generated signal (620) and then calculates a value of an autocorrelation function for the received data signal with the locally-generated signal at the current acquisition phase. (630). The rake finger determines when the autocorrelation function is at a peak value (640), saving the peak value in a storage device (290) when the autocorrelation function is at the peak value (650). The rake finger can then set a finger weight (W) for the rake finger based on the peak value stored in the storage device. This method can be performed at least in part during an acquisition process for the rake finger.

Abstract: A voice processor performing logarithm compression and decompression enabling various signal processing functions to be efficiently added. When there is a ? Law compression input, an approximate logarithm conversion process is performed. The processor performs bit inversion on the ? Law compression value and sets MSB to “0” to obtain an approximate ? log value. The approximate ? log value is then subjected to various basic calculations. With respect to the approximate ? log value, multiplication of linear values is performed through addition, and division is performed through subtraction. Further, the squaring of a linear value is performed by shifting 1 bit toward the right, and square root calculation of a linear value is performed by shifting 1 bit to the left. Also, a twofold of the linear value is calculated by adding “16”. The processor outputs the result to obtaining a ? Law compression output.

Abstract: A semiconductor device includes a memory array having a plurality of non-volatile memory cells. Each non-volatile memory cell of the plurality of non-volatile memory cells has a gate stack. The gate stack includes a control gate and a discrete charge storage layer such as a floating gate. A dummy stack ring is formed around the memory array. An insulating layer is formed over the memory array. The dummy stack ring has a composition and height substantially the same as a composition and height of the gate stack to insure that a CMP of the insulating layer is uniform across the memory array.