Abstract: A device (200) includes a circuit (202) and a driver stage (204) therefor. The circuit includes two sub-circuits (231 and 232). The driver stage includes switcher logic (206) that produces signals that control switching on and off of the sub-circuits. The switcher logic also produces other signals in advance of the signals that control the switching of the sub-circuits. The driver stage includes delay compensations circuits (221 and 222), coupled to the switcher logic and to the circuit, that produce timing signals for the switcher logic. The timing signals are closely aligned with moments that a changing voltage at a node between the sub-circuits passes through threshold voltages. The timing signals compensate for all delays of signals through the device such that a period that both sub-circuits are off is minimized, while ensuring that both sub-circuits are not on at a same time.

Abstract: A data processing system on an integrated circuit includes a core that performs switching operations responsive to a system clock that draws current from the power supply network. An IR-drop detector includes a resistor ladder having outputs representative of an IR-drop caused by the core during the switching operations. The system further includes a plurality of amplifiers coupled to the outputs indicative of the IR-drop, a plurality of flip-flops coupled to the amplifiers, and a variable clock generator. The variable clock generator outputs a sampling clock comprising a group consisting of a variable phase or a variable frequency to the plurality of flip-flops. The flip-flops are triggered by the sampling clock so that the IR-drop at a time during a clock cycle of the system clock can be detected, and the peak IR-drop value for can be tracked.

Abstract: A technique for determining whether an integrated circuit design is susceptible to glitches includes identifying storage elements in an original register-transfer level (RTL) file of the integrated circuit design and identifying clock signals for each of the storage elements in the original RTL file. The technique also includes generating respective assertions for each of the identified clock signals and identifying potential glitchy logic in respective clock paths for each of the identified clock signals. Finally, the technique includes inserting, at the potential glitchy logic, glitches in each of the respective clock paths of the original RTL file to provide a modified RTL file and executing an RTL simulation using the modified RTL file and the respective assertions.

Abstract: Breakdown voltage BVdss is enhanced and ON-resistance reduced in RESURF devices, e.g., LDMOS transistors, by careful charge balancing, even when body and drift region charge balance is not ideal, by: (i) providing a plug or sinker near the drain and of the same conductivity type extending through the drift region at least into the underlying body region, and/or (ii) applying bias Viso to a surrounding lateral doped isolation wall coupled to the device buried layer, and/or (iii) providing a variable resistance bridge between the isolation wall and the drift region. The bridge may be a FET whose source-drain couple the isolation wall and drift region and whose gate receives control voltage Vc, or a resistor whose cross-section (X, Y, Z) affects its resistance and pinch-off, to set the percentage of drain voltage coupled to the buried layer via the isolation wall.

Abstract: A method (70) of forming sensor packages (20) entails providing a sensor wafer (74) having sensors (30) formed on a side (26) positioned within areas (34) delineated by bonding perimeters (36), and providing a controller wafer (82) having control circuitry (42) at one side (38) and bonding perimeters (46) on an opposing side (40). The bonding perimeters (46) of the controller wafer (82) are bonded to corresponding bonding perimeters (36) of the sensor wafer (74) to form a stacked wafer structure (48) in which the control circuitry (42) faces outwardly. The controller wafer (82) is sawn to reveal bond pads (32) on the sensor wafer (74) which are wire bonded to corresponding bond pads (44) formed on the same side (38) of the wafer (82) as the control circuitry (42). The structure (48) is encapsulated in packaging material (62) and is singulated to produce the sensor packages (20).

Abstract: Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging microelectronic device panels in a panel stack. Each microelectronic device panel includes a plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are formed in the panel stack exposing the plurality of package edge conductors. An electrically-conductive material is deposited into the trenches and contacts the plurality of package edge conductors exposed therethrough. The panel stack is then separated into partially-completed stacked microelectronic packages. For at least one of the partially-completed stacked microelectronic packages, selected portions of the electrically-conductive material are removed to define a plurality of patterned sidewall conductors interconnecting the microelectronic devices included within the stacked microelectronic package.

Abstract: A semiconductor sensor device has a pressure sensing die and at least one other die mounted on a substrate, and electrical interconnections that interconnect the pressure sensing die and the at least one other die. An active region of the pressure sensing die is covered with a pressure sensitive gel material, and a cap having a cavity is mounted over the pressure sensing die such that the pressure sensing die is positioned within the cavity. The cap has a side vent hole that exposes the gel covered active region of the pressure sensing die to ambient atmospheric pressure outside the sensor device. Molding compound on an upper surface of the substrate encapsulates the at least one other die and at least a portion of the cap.

Abstract: A method and apparatus may be used to evaluate a polynomial by initializing a multiply and accumulate feedback apparatus (260) comprising a multiplier stage (264) having an output coupled to an input of an accumulator stage (267) having an accumulator feedback output (269) selectively coupled to an input of the multiplier stage over a plurality of clock cycles; iteratively calculating a final working loop variable z over an additional plurality of clock cycles; multiplying the final working loop variable z and a complex input vector x to compute a final multiplier value; and adding a least significant complex polynomial coefficient to the final multiplier value using the multiplier stage of the multiply and accumulate feedback apparatus to yield a result of the polynomial evaluation.

Abstract: A voltage regulator includes an amplifier having a first input coupled to a first reference voltage and a second input coupled to a voltage feedback signal; a multiplexer having a first input coupled to an output of the amplifier, a second input coupled to a voltage clamp signal, and a control input; and a control circuit having a first input coupled to an over current indicator, a second input coupled to a no over voltage indicator, a third input coupled to a timer signal, and an output coupled to the control input of the multiplexer.

Abstract: A semiconductor device package having a cavity formed using film-assisted molding techniques is provided. Through the use of such techniques the cavity can be formed in specific locations in the molded package, such as on top of a device die mounted on the package substrate or a lead frame. In order to overcome cavity wall angular limitations introduced by conformability issues associated with film-assisted molding, a gel reservoir feature is formed so that gel used to protect components in the cavity does not come in contact with a lid covering the cavity or the junction between the lid and the package attachment region. The gel reservoir is used in conjunction with a formed level setting feature that controls the height of gel in the cavity. Benefits include decreased volume of the cavity, thereby decreasing an amount of gel-fill needed and thus reducing production cost of the package.

Abstract: A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact regions separated from one another by a shallow trench isolation region (114, 115), along with a non-uniform cathode region (104) and peripheral anode regions (106, 107) which define vertical and horizontal p-n junctions under the anode contact regions (130, 132), including a horizontal cathode/anode junction that is shielded by the heavily doped anode contact region (132).

Abstract: Methods for the fabrication of a Microelectromechanical Systems (“MEMS”) devices are provided, as are MEMS devices. In one embodiment, the MEMS device fabrication method includes forming at least one via opening extending into a substrate wafer, depositing a body of electrically-conductive material over the substrate wafer and into the via opening to produce a via, bonding the substrate wafer to a transducer wafer having an electrically-conductive transducer layer, and forming an electrical connection between the via and the electrically-conductive transducer layer. The substrate wafer is thinned to reveal the via through a bottom surface of the substrate wafer, and a backside conductor is produced over a bottom surface of the substrate wafer electrically coupled to the via.

Abstract: A method for determining the coordinates of a point on the surface of an object is provided. A source system, such as an OBIRCH system, is used to analyze and detect faults in an integrated circuit on a semiconductor die. The die includes three reference points and the detected fault(s) are defined with reference to the reference points. When the die is transferred to a FIB or other system for fault analysis, a processor determines the coordinates of the fault(s) for the FIB system using the three reference points.

Abstract: A semiconductor package device comprises a radio frequency power transistor having an output port operably coupled to a single de-coupling capacitance located within the semiconductor package device. The single de-coupling capacitance is arranged to provide both high frequency decoupling and low frequency decoupling of signals output from the radio frequency power transistor.

Abstract: In a disclosed embodiment, a method for tiling selected vias in a semiconductor device having a plurality of vias comprises generating a layout database for the semiconductor device; creating zones around the plurality of vias; measuring density of covering metal in each zone; selecting a low density zone as being a zone that has a metal density less than a threshold metal density; and adding at least one tiling feature on a metal layer above the plurality of vias in the low density zone so that metal density of the low density zone increases to at least the same as the threshold metal density.

Abstract: A simulation system for testing a simulation of a device against one or more violation rules is described. The simulation system comprises a device simulator for executing the simulation of a device using a device design, a device model and a simulation scenario; and one or more violation monitors, one for each violation rule. At least one of the violation monitors comprises a violation information detector and a threshold controller. The violation information detector is arranged to detect one or more violations of the respective violation rule during the executing of the simulation and, for each violation, determine information representing the respective violation, wherein detecting the one or more violations comprises comparing a simulated parameter against a threshold. The threshold controller is arranged to determine the threshold for the respective violation rule in dependence on a temporal characteristic of the associated violation.

Abstract: A method of detecting a set up signal having a predetermined frequency and used for data transmissions over a communication network comprises comparing an energy level of a filtered received signal with a first predetermined value and providing a first detect signal, comparing an energy level of a component of the received signal at a predetermined frequency with a second predetermined value and providing a second detect signal. In addition, an autocorrelation function is performed on the received signal to discriminate between the set up signal and other signals in the received signal and a check signal is provided when the autocorrelation function identifies the set up signal. The set up signal in the received signal is detected in response to the first and the second detect signals and the check signal. A method of detecting phase reversals in the set up signal is also disclosed.

Abstract: A built-in self test system comprises an integrated circuit device comprising a plurality of functional units coupled to built-in self test circuitry; a low power control unit operable to switch the integrated circuit device into a low power mode and to generate a BIST wake-up signal during or before entering the low power mode; and a built-in self test control unit coupled to the built-in self test circuitry and the low power control unit and arranged to initiate a built-in self test when receiving the BIST wake-up signal.

Abstract: A method entails providing a substrate with a structural layer having a thickness. A partial etch process is performed at locations on the structural layer so that a portion of the structural layer remains at the locations. An oxidation process is performed at the locations which consumes the remaining portion of the structural layer and forms an oxide having a thickness that is similar to the thickness of the structural layer. The oxide electrically isolates microstructures in the structural layer, thus producing a structure. A device substrate is coupled to the structure such that a cavity is formed between them. An active region is formed in the device substrate. A short etch process can be performed to expose the microstructures from an overlying oxide layer.

Abstract: A method forms an electrical connection between a first metal layer and a second metal layer. The second metal layer is above the first metal layer. A first via is formed between the first metal layer and the second metal layer. A first measure of a number of vacancies expected to reach the first via is obtained. A second via in at least one of the first metal layer and the second metal layer is formed if the measure of vacancies exceeds a first predetermined number.