Abstract: Disclosed is a nonvolatile memory device comprising a semiconductor substrate defining first and second active regions arranged in one direction; a first gate insulating layer and a floating gate deposited on the first and second active regions in a predetermined pattern; a second gate insulating layer and a control gate line deposited in one direction perpendicular to the first and second active regions and covering the floating gate; first impurity regions formed in the first and second active regions at one side of the control gate line; second impurity regions formed in the first and second active regions at other side of the control gate line; first contact plugs contacted with the first impurity regions; and a common conductive line formed in one direction on the semiconductor substrate at the other side of the control gate line, for connecting the second impurity regions of the first and second active regions.

Abstract: A method for detecting and correcting a defective pixel in an image sensor including an M(row line)×N(column line) unit pixels, M and N being positive integers, includes a first step of electrically scanning photoelectric charges generated from unit pixels of a first row line for a first integration time and storing a first data corresponding to the photoelectric charges, a second step of electrically scanning photoelectric charges generated from the unit pixels of the first row line for a second integration time and storing a second data corresponding to the photoelectric charges, a third step of comparing the first data and the second data one another, if the first data is different from the second data, an error signal is generated and then a corresponding address of the unit pixel is stored as a defective pixel address, a fourth step of repeating the first to the third step to an Mth line by increasing an address by one, and a fifth step of comparing an address of a unit pixel to be read with the de

Abstract: An apparatus and method for image-compression encoding and decoding using an adaptive transform in which, where different transform coefficients are outputted in accordance with a change of the transform direction order for an input image signal block, encoding and decoding procedures are conducted, based on the transform direction order selected in accordance with the characteristics of the input image signal block. In accordance with the present invention, an orthogonal transform and a inverse orthogonal transform for blocks are controlled, based on a determination made about whether signals within a block, to be currently encoded, have a higher correlation in a vertical direction or in a horizontal direction, using information about blocks encoded or both information about blocks encoded and information about the current block.

Abstract: Disclosed is a RF block of a mobile communication base station in which separated modules therein is implemented into one module, in which an antenna diagnosis function is performed by using a modem (control module) embedded therein, and in which implementation of a filter is simplified. The RF block of a mobile communication base station of the present invention has many advantages in that each of the separated modules therein is implemented into one module so that a degree of utility of a space is improved, and therefore, the number of components and a unit price is reduced, thereby curtailing a cost when configuring a system, in that a variable attenuator can vary an output level of the system so that a variable range thereof is wider than that implemented by a PCB circuit of a up-converter, and in that a control/alarm signal is processed by a modem so that it is easy to monitor the mobile communication base station upon operation thereof.

Abstract: A semiconductor device and a fabrication method thereof which can, for example, prevent a punch-through from occurring by forming oxide spacers around source/drain regions in a semiconductor substrate instead of forming a conventional halo ion implanting layer. Such structure improves, for example, an operational speed by reducing junction capacitance, prevents a hot carrier effect from occurring by weakening an electric field around the drain region, and improves reliability by preventing a latch up from occurring. The semiconductor device includes a gate electrode formed on the semiconductor substrate, sidewall spacers formed at the sidewalls of the gate electrode, an impurity layer formed in the semiconductor substrate below each sidewall spacer, a trench formed in the semiconductor substrate at both sides of the gate electrode, oxide spacers formed at the bottom inside corner of each trench, and a conductive material filling up each trench.

Abstract: A method for forming a gate structure beginning with a semiconductor substrate provided with an isolation region formed therein. An HfO2 layer and a conductive layer are formed on the semiconductor substrate, subsequently. The conductive layer and the HfO2 layer are patterned into the gate structure. By utilizing an HfO2 layer as a gate dielectric, an effective K of the gate dielectric can be controlled to within 18 to 25. In addition, by employing a CVD method for forming the HfO2 layer, it is possible to obtain a high K gate dielectric with excellent leakage current characteristic as well as a low interface state with both a gate electrode and a semiconductor substrate.

Abstract: The present invention discloses a method for fabricating a semiconductor device. In a process for forming metal interconnection contact holes on both a gate electrode including an Si-rich SiON film as a mask insulating film in a peripheral circuit region and on a semiconductor substrate, the metal interconnection contact hole is formed according to a three-step etching process using a photoresist film pattern exposing the intended locations of a metal interconnection contacts as an etching mask. Accordingly, contact properties are improved by preventing damage to the semiconductor substrate, thereby reducing leakage current and improving yield.

Abstract: A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.

Abstract: A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.

Abstract: A method for measuring a location of a mobile station in a mobile communication system includes the steps of: when the mobile station is requested of a pilot strength measurement message (PSMM) by a base station or a handoff is occurred, measuring strengths of pilot channel signals of both an activated set of base stations and a neighbor list set of base stations in specific areas within each sector of each base station; transmitting the PSMM to the base station; comparing the PSMM, in sequence, with strengths of the pilot channel signals from specific areas covered by an activated set of the base stations and a neighbor list set of the base stations which are previously stored in a database; and according to a comparison result acquired from the step c), measuring the location of the mobile station.

Abstract: An correlator for acquiring initial synchronization and initial synchronization acquiring method using the same by means of signals to be transmitted from receiving stages of a base station and a mobile station in a CDMA system is disclosed. The correlator includes a plurality of shift registers that each shift received spread signals, a plurality of multipliers that each multiply the shifted spread signal by each pseudo random code stored therein, an adder that adds the multiplied results from the multipliers, and an accumulating adder that adds in recursive pattern the added result from the adder over a predetermined times. Accordingly, the present invention has the effect that reduces initial synchronization time while realizing simple structure.

Abstract: A non-volatile memory device includes a floating gate formed over a semiconductor substrate. At one end of the floating gate, there is a tapered protrusion having a horn-like or bird's beak shape. A control gate covers the floating gate except for the tapered protrusion. Sidewall spacers are formed adjacent to the floating gate and the control gate. An erasing gate is formed over the tapered protrusion of the floating gate.

Abstract: A MOSFET device includes a gate formed on a multi-surface area of a semiconductor substrate formed of a first surface which is not etched, a second surface etched in parallel with the first surface, and a surface connecting the first and second surfaces. A source/drain region is formed below each of the first and second surfaces laterally adjacent to a gate prevailed on the matter surface. A first contact is formed of a conductive material formed on an upper surface of the source/drain region, and a second contact is formed of a conductive material formed on the gate, so that it is possible to prevent a punch through phenomenon, increase the integrity of the device, and decrease the contact resistance of a contact formed on the gate.

Abstract: A capacitor using a high dielectric constant film for a semiconductor memory device, and a fabrication method thereof are provided that improve a process margin and achieve a stable contact. The capacitor can be fabricated by forming an impurity layer at a surface of a semiconductor substrate, forming an interlayer insulation film on the semiconductor substrate having a contact hole filled with a conductive material coupled to the impurity layer, and sequentially forming a first oxide film, a nitride film and a second oxide film on the interlayer insulation film so that the contact hole is exposed therethrough, and the nitride film and the first oxide film are partially exposed through the second oxide film. A diffusion barrier film is formed at outer and side portions of the second oxide film, outer and side portions of the nitride film, side portions of the first oxide film, and on an exposed portion of the contact hole.

Abstract: A stacked semiconductor package including: a first chip; a plurality of first leads of which one side of each of the first leads is attached to the first chip by an insulating adhesive member and electrically connected to the first chip; a first molding compound for sealing the first chip and the first leads, including holes for exposing a predetermined portion of each of the plurality of the first leads, and the first molding compound does not cover a side of the first leads opposite the holes; a first conductive portion formed within the holes included in the first molding compound; an external terminal electrically connected to the first conductive portion; a second chip; a plurality of second leads attached on the second chip by the insulating adhesive member, and being electrically connected to the second chip; a second molding compound for sealing the second chip and the second leads, and exposing a predetermined portion of the second leads; a plurality of conductive connection units for electrically co

Abstract: The present invention relates to organic anti-reflective coating polymers suitable for use in a semiconductor device during a photolithograhy process for forming ultrafine patterns using 193 nm ArF beam radiation, and preparation method therefor. Anti-reflective coating polymers of the present invention contain a monomer having a pendant phenyl group having high absorbency at the 193 nm wavelength. When the polymers of the present invention are used in an anti-reflective coating in a photolithography process for forming ultrafine patterns, the polymers eliminate the standing waves caused by changes in the thickness of the overlying photosensitive film, by the spectroscopic property of lower layers on wafer and by changes in CD due to diffractive and reflective light originating from the lower layers.

Abstract: The present invention provides photoresist monomers, photoresist polymers derived from the same, processes for producing such photoresist polymers, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions.

Abstract: A semiconductor device and method for fabricating the same which improves reliability of the semiconductor device is disclosed. The semiconductor device includes: a first insulating film and a gate electrode sequentially formed on a part of a semiconductor substrate; a first insulating spacer formed at both sides above the gate electrode; a second insulating spacer formed at both sides below the gate electrode; and a cobalt silicide film formed on a surface of the gate electrode at a predetermined depth.

Abstract: The present invention relates to a packet command driving type memory device, comprises a first signal generating means for receiving a signal being generated from a register and generating a domain signal of certain bit; a second and a third signal generating means for generating a first and a second control signal for loading data; a fourth and a fifth signal generating means for generating a third and a fourth control signal for reading data from a core block; a data output shift part for shifting the data read from the core block according to the first and the second control signal generated from the second and a third signal generating means and a clock signal, delaying the shifted data by a certain time according to the domain signal generated from the first signal generating means according to each domain and compensating for a data output time and outputting it.

Abstract: There is disclosed a flash memory cell and method of manufacturing the same, in which the circular hole is formed in the insulating film formed on the silicon substrate, the floating gate having a cylindrical shape is formed within the hole and the control gate is formed within the floating gate. Therefore, the source used as a current supply and the silicon substrate may be formed integratedly, and also the process of forming a device separation film can be omitted, thus allowing manufacturing an ultra high integration nonvolatile memory device.