Abstract: A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.

Abstract: The disclosed technology relates to semiconductors, and more particularly to a junction field effect transistor (JFET). In one aspect, a method of fabricating a JFET includes forming a well of a first dopant type in a substrate, wherein the well is isolated from the substrate by an isolation region of a second dopant type. The method additionally includes implanting a dopant of the second dopant type at a surface of the well to form a source, a drain and a channel of the JFET, and implanting a dopant of the first dopant type at the surface of the well to form a gate of the JFET. The method additionally includes, prior to implanting the dopant of the first type and the dopant of the second type, forming a pre-metal dielectric (PMD) layer on the well and forming contact openings in the PMD layer above the source, the drain and the gate. The PMD layer has a thickness such that the channel is formed by implanting the dopant of the first type and the dopant of the second type through the PMD layer.

Abstract: A spectral camera for producing a spectral output is disclosed. The spectral camera has an objective lens for producing an image, an array of mirrors, an array of filters for passing a different passband of the optical spectrum for different ones of the optical channels arranged so as to project multiple of the optical channels onto different parts of the same focal plane, and a sensor array at the focal plane to detect the filtered image copies simultaneously. By using mirrors, there may be less optical degradation and the trade off of cost with optical quality can be better. By projecting the optical channels onto different parts of the same focal plane a single sensor or coplanar multiple sensors can to be used to detect the different optical channels simultaneously which promotes simpler alignment and manufacturing.

Abstract: The present disclosure relates to a memory cell, a memory array, and methods for writing a memory cell. In an example embodiment, a memory cell comprises a first transistor, a second transistor, and a differential sense amplifier. The first transistor is a Vt-modifiable n-channel transistor and the second transistor is a Vt-modifiable p-channel transistor, each transistor having first and second main electrodes. The first main electrodes of the first and second transistors are connected together. The differential sense amplifier is connected to the second main electrodes of the first and the second transistor. The differential sense amplifier is adapted for sensing the current difference between the first transistor and the second transistor.

Abstract: The present disclosure provides a method of preparing a chalcogen containing solution that is hydrazine free and hydrazinium free, wherein the method comprises: providing a predetermined amount of elemental chalcogen; providing a predetermined amount of elemental sulfur; providing an amine solvent; and combining the predetermined amount of elemental chalcogen and the predetermined amount of elemental sulfur in the amine solvent, thereby dissolving the elemental chalcogen and the elemental sulfur in the amine solvent. The chalcogen containing solution can advantageously be used as a precursor for the formation of a chalcogen containing layer on a substrate.

Abstract: The disclosed technology generally relates to semiconductor devices, and more particularly to transistor devices comprising multiple channels. In one aspect, a method of fabricating a transistor device comprises forming on the substrate a plurality of vertically repeating layer stacks each comprising a first layer, a second layer and a third layer stacked in a predetermined order, wherein each of the first, second and third layers is formed of silicon, silicon germanium or germanium and has a different germanium concentration compared to the other two of the first, second and third layers. The method additionally includes selectively removing the first layer with respect to the second and third layers from each of the layer stacks, such that a gap interposed between the second layer and the third layer is formed in each of the layer stacks.

Abstract: A method is provided for forming a feature of a target material on a substrate. The method including: forming a feature of a sacrificial material on the substrate; and forming the feature of the target material by a deposition process during which the feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the deposition process, wherein the sacrificial material is replaced by the target material and the target material is selectively deposited on surface portions of the substrate, which portions were covered by the feature of the sacrificial material, to form the feature of the target material.

Abstract: Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material. The example method includes providing the first nanostructure on a substrate. The method also includes forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface. The method further includes forming the second nanostructure by a vapor deposition process. The second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

Abstract: Embodiments described herein relate to an imaging device, a method for imaging an object, and a photonic integrated circuit. The imaging device includes at least one photonic integrated circuit. The photonic integrated circuit includes an integrated waveguide for guiding a light signal. The photonic integrated circuit also includes a light coupler optically coupled to the integrated waveguide. The light coupler is adapted for directing the light signal out of a plane of the integrated waveguide as a light beam. The imaging device also includes a microfluidic channel for containing an object immersed in a fluid medium. The microfluidic channel is configured to enable, in operation of the imaging device, illumination of the object by the light beam. In addition, the imaging device includes at least one imaging detector positioned for imaging the object illuminated by the light beam.

Abstract: Embodiments described herein relate to a light coupler, a photonic integrated circuit, and a method for manufacturing a light coupler. The light coupler is for optically coupling to an integrated waveguide and for out-coupling a light signal propagating in the integrated waveguide into free space. The light coupler includes a plurality of microstructures. The plurality of microstructures is adapted in shape and position to compensate decay of the light signal when propagating in the light coupler. The plurality of microstructures is also adapted in shape and position to provide a power distribution of the light signal when coupled into free space such that the power distribution corresponds to a predetermined target power distribution. Each of the microstructures forms an optical scattering center. The microstructures are positioned on the light coupler in accordance with a non-uniform number density distribution.

Abstract: The present disclosure relates to a smart textile product and a method for manufacturing a smart textile product. The smart textile product is provided with a flexible and/or stretchable textile fabric (10) comprising a plurality of electrically conductive threads (11, 12) and at least one rigid electronic or optoelectronic component (20) comprising at least one electrically conductive pad (21, 22), which is in electrical contact with at least one of the plurality of electrically conductive threads. The smart textile product (10) comprises an elastomeric encapsulation layer (31) in which the electrical connection (1, 2) is embedded, so as to provide a gradual transition in deformability between the flexible and/or stretchable textile fabric (10) and the at least one rigid component (20) at the location of the at least one electrical connection (1, 2).

Abstract: A cluster of non-collapsed nanowires, a template to produce the same, methods to obtain the template and to obtain the cluster by using the template, and devices having the cluster. The cluster and the template both have an interconnected region and an interconnection-free region.

Abstract: An example micro-fluidic device includes a micro-fluidic channel having an inner surface and a plurality of pillars positioned along the inner surface. The device further includes a plurality of power supplies connected to the pillars. Another example micro-fluidic device includes a micro-fluidic channel having an inner surface and a plurality of pillars positioned along the inner surface. The device further includes a power supply. The pillars are grouped into at least two groups of pillars, each group of pillars including at least two pillars, and all pillars of at least one group of pillars are connected to the power supply. In another example, a sensing system for detecting bioparticles includes a micro-fluidic device, wherein a surface of each pillar comprises functionalized plasmonic nanoparticles or functionalized SERS nanoparticles, a radiation source for radiating the micro-fluidic device, and a detector for detecting SERS signals or surface plasmon resonance.

Abstract: The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral component of a spin wave propagating through the spin wave waveguide so as to provide a filtered spin wave. The magneto-electric cell comprises an electrode for receiving a control voltage, and adjusting the control voltage controls a spectral parameter of the spectral component of the spin wave via an interaction, dependent on the control voltage, between the magneto-electric cell and a magnetic property of the magnonic crystal structure.

Abstract: The disclosure provides a phase locked loop, PLL, for phase locking an output signal to a reference signal. The PLL comprises a reference path providing the reference signal to a first input of a phase detector, a feedback loop providing the output signal of the PLL as a feedback signal to a second input of the phase detector, a controllable oscillator generating the output signal based on at least a phase difference between reference and feedback signal, a digital-to-time converter, DTC, delaying a signal that is provided at one of the first and second input, a delay calculation path for calculating a DTC delay value. The PLL further comprises a randomization unit for generating and adding a random offset, i.e. a pseudo-random integer, to the delay value. The offset is such that a target output of the phase detector remains substantially unchanged.

Abstract: A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer.

Abstract: The present disclosure relates to microbubble generator devices for deflecting objects in a liquid, systems for sorting objects that utilize such devices, and methods for fabricating such devices. At least one embodiment relates to a micro-fluidic device for deflecting objects in a liquid. The device includes a substrate for providing an object-containing liquid thereon. The device also includes a microbubble generator that includes at least one microbubble generating element. The microbubble generator is located on a surface of the substrate and in direct contact with the object-containing liquid when the object-containing liquid is provided on the substrate. The at least one microbubble generating element is configured to deflect a single object in the object-containing liquid through generation of a plurality of microbubbles.

Abstract: An optical lens device has an actively controllable focal length. This device comprises an element with lensing effect comprising a plurality of regions. Each such region has a corresponding refractive power for providing a corresponding focal length distinct from the focal length of at least one other region of this plurality of regions. The device further comprises at least one non-centric addressable optical element integrated in or provided on the element with lensing effect. This at least one addressable optical element is adapted for changing the transmittance of at least one of the plurality of regions in response to a control signal. The device also comprises a control means for generating the control signal.

Abstract: The present disclosure relates to a front-end system for a radio device comprising: a charge generator circuit arranged for receiving a digital baseband signal, a first converter circuit arranged for calculating at least one charge value based on the digital baseband signal, a second converter circuit arranged for converting the at least one charge value into at least one electrical charge, and a modulator circuit arranged for generating a radio frequency signal based on the at least one electrical charge and at least one local oscillator signal.

Abstract: A device for imaging comprising an image sensor is disclosed. The image sensor includes rows and columns of pixels. The image sensor further includes a first control structure for controlling transfer of accumulated electric charges from photo-active regions to transmission regions in pixels. The image sensor further includes a second control structure for controlling transfer of accumulated charge in the transmission region of each row to the adjacent row below. The first and second control structures control the image sensor to alternately transfer accumulated charges in photo-active regions to the transmission regions and transfer charges to the adjacent row below. The control structure includes a plurality of row structures which are arranged to select whether the charge in the photo-active regions of respective rows are added to the transmission region. Each row of pixels is controlled by one of the row structures of the first control structure.