Abstract: An electrochemical ethylene sensor and method for ethylene sensing are disclosed. In one aspect, an electrochemical ethylene sensor includes a working electrode and a counter electrode on an electrically insulating substrate. An ionic liquid layer covers the working electrode and counter electrode. In one method, a voltage is applied to the working electrode which is equal to or lower than the voltage required for the onset of oxidation of the material of the working electrode, for example, in the range spanning 700 mV before the onset of oxidation of the material of the working electrode.

Abstract: The present disclosure relates to a device for analyzing a fluid sample. In one aspect, the device includes a fluidic substrate that comprises a micro-fluidic component embedded in the fluidic substrate configured to propagate a fluid sample via capillary force through the device and a means for providing a fluid sample connected to the micro-fluidic component. The device also includes a lid attached to the fluidic substrate at least partly covering the fluidic substrate and at least partly closing the micro-fluidic component. The fluidic substrate may be a silicon fluidic substrate and the lid may be a CMOS chip. In another aspect, embodiments of the present disclosure relate to a method for fabricating such a device, and the method may include providing a fluidic substrate, providing a lid, and attaching, through a CMOS compatible bonding process, the fluidic substrate to the lid to close the fluidic substrate at least partly.

Abstract: The disclosed technology generally relates to a sensor and methods for making and using the same, and more particularly relates to a sensor configured to sense the presence of at least one fluidum. In one aspect, a sensor for sensing a fluidum in a space adjoining the sensor comprises a two-dimensional electron gas (2DEG) layer stack. The sensor additionally comprises a gate lying adjacent to at least part of the 2DEG layer stack and configured to electrostatically control the electron density of a two-dimensional electron gas (2DEG) in the 2DEG layer stack. The sensor further comprises a source electrode contacting the 2DEG layer stack for electrically contacting the 2DEG.

Abstract: A method includes providing a dummy gate structure on a substrate. The dummy gate structure includes a gate dielectric layer and a dummy gate electrode layer, and is laterally defined by inner sidewalls of a set of spacers. The method also includes laterally embedding the dummy gate structure, removing the dummy gate electrode, and providing a final gate electrode layer in between the inner sidewalls of the set of spacers. Providing the final gate electrode layer further includes providing a diffusion layer that extends on top of the gate dielectric layer, on inner sidewalls of the spacers, and on a portion of a front surface of embedding layers for the dummy gate structure. Providing the final gate electrode also includes providing a metal on top of the diffusion layer, applying an anneal step, and filling the area in between the inner sidewalls of the set of spacers with a final gate metal filling layer. The present disclosure also relates to an associated transistor.

Abstract: A DC-DC converter and a method of controlling an inductor-based switching-mode DC-DC converter in a discontinuous conduction mode are disclosed. In one aspect the method includes providing a DC-DC converter having a first and second switching elements, and, in each conversion cycle, first, turning on a first switching element, while maintaining a second switching element in off state, thereby increasing the current through an inductor. The method also includes detecting when a voltage signal at one connection node of the inductor reaches a first threshold value for the first time after the start of the conversion cycle, and turning on the second switching element, while maintaining the first switching element in off state, thereby decreasing the inductor current.

Abstract: A built-in self-calibration system and method for a micro-mirror array device, for example, operating as a variable focal length lens is described. The calibration method comprises determining a capacitance value for each micro-mirror element in the array device at a number of predetermined reference angles to provide a capacitance-reference angle relationship. From the capacitance values, an interpolation step is carried to determine intermediate tilt angles for each micro-mirror element in the array. A voltage sweep is applied to the micro-mirror array and capacitance values, for each micro-mirror element in the array, are measured. For a capacitance value that matches one of the values in the capacitance-reference angle relationship, the corresponding voltage is linked to the associated tilt angle to provide a voltage-tilt angle characteristic which then stored in a memory for subsequent use.

Abstract: A kit of parts for electrical stimulation and/or recording of activity of excitable cells in a tissue is described. The kit of parts comprises on the one hand a probe guiding means comprising a plurality of accommodation channels, each channel being adapted for accommodating a probe device having a plurality of stimulation means and/or recording means located on a die. At least one of the plurality of accommodation channels has a curved shape. The kit of parts also comprises at least one probe device for electrical stimulation and/or recording of activity of excitable cells in a tissue, the probe device comprising a plurality of stimulation means and/or recording means located on a die having a thinned and etched surface for providing flexibility to the probe device.

Abstract: A method of producing a III-V fin structure within a gap separating shallow trench isolation (STI) structures and exposing a semiconductor substrate is disclosed, the method comprising providing a semiconductor substrate, providing in the semiconductor substrate at least two identical STI structures separated by a gap exposing the semiconductor substrate, wherein said gap is bounded by said at least two identical STI structures, and, producing a III-V fin structure within said gap on the exposed semiconductor substrate, and providing a diffusion barrier at least in contact with each side wall of said at least two identical STI structures and with side walls of said III-V fin structure and wherein said semiconductor substrate is a Si substrate.

Abstract: The present invention is directed to solid state organic light emitting devices and to methods for triplet excitation scavenging in such devices. More particularly, the present invention relates to a method for substantially reducing a triplet population in a solid state organic material, the method comprising providing molecules exhibiting non-vertical triplet energy transfer in the solid state organic material or at a distance smaller than a triplet exciton diffusion length from the solid state organic material.

Abstract: A method and apparatus is provided for self-assembly of micro-components such as microchips onto a carrier substrate, provided with assembly locations for the components. The components are supplied to the carrier by a liquid flow, while a template substrate is arranged facing the carrier. The template is a substrate provided with openings aligned to the assembly locations. The carrier and template are submerged into a tank filled with the liquid, while the liquid flow is supplied to the template side together with the components, so that the components are guided towards the openings by the flow of liquid. Once a component is trapped into an opening of the template, substantially no further liquid flow through the opening is possible, so that following components are guided towards the remaining openings, thereby establishing a fast and reliable self-assembly process.

Abstract: A semiconductor device and a method of manufacturing the device is disclosed. In one aspect, a method includes providing a substrate, providing a first epitaxial semiconducting layer on top of the substrate, and forming a one- or two-dimensional repetitive pattern, each part of the pattern having an aspect ratio in the range of about 0.1 to 50.

Abstract: The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Abstract: An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface, wherein the first surface is defect-poor and is made of a doped III-V semiconductor material, wherein the at least one nanowire is defect-poor and made of an undoped III-V semiconductor material having a lattice mismatch with the material of the first surface of from about 0% to 1%.

Abstract: Disclosed is a highly reliable inductive vibration power generator wherein mechanical damping caused by the phenomenon of electrostatic pulling-in (stiction) and the like is suppressed even if the potential of an electret is increased and/or the gap between an electrode and the electret is reduced in order to increase the amount of power generation. The two surfaces of a movable substrate are respectively provided with first electrets and second electrets. By means of providing first electrodes and second electrodes to a lower substrate and an upper substrate and facing the respective electrets with a predetermined gap therebetween, electrostatic force is caused to arise on both sides of the movable substrate, and the pulling of the movable substrate in only one direction is prevented.

Abstract: A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.

Abstract: The present disclosure relates a method for performing hybrid beamforming in a wireless communication device or any device that uses signal phase shifting for transmission and/or reception. The method comprises performing phase shifting in at least two different domains (or paths), each characterized by an operational frequency, in the communication device. More in particular, the disclosure relates in a first aspect to a method for performing at a receiver beamforming on a beam of incoming signals received via plurality of antenna paths. In another aspect, the present disclosure relates a method for performing hybrid beamforming at a transmitter device, wherein also phase shifting in at least two different domains is performed. More in particular, the disclosure also relates to a method for performing at a transmitter device beamforming on a beam of outgoing signals via a plurality of antenna paths.

Abstract: A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.

Abstract: Digital driving circuitry for driving an active matrix display comprising a plurality of pixels logically organized in a plurality of rows and a plurality of columns, each pixel comprising a light emitting element, comprises a current driver for each of the plurality of columns for driving a predetermined current through the corresponding column, the predetermined current being proportional to the number of pixels that are ON in that column. The digital driving circuitry further comprises digital select line driving circuitry for sequentially selecting the plurality of rows, and digital data line driving circuitry for writing digital image codes to the pixels in a selected row, synchronized with the digital select line driving circuitry.

Abstract: Disclosed are methods for manufacturing semiconductor devices and the devices thus obtained. In one embodiment, the method comprises obtaining a semiconductor substrate comprising a germanium region doped with n-type dopants at a first doping level and forming an interfacial silicon layer overlying the germanium region, where the interfacial silicon layer is doped with n-type dopants at a second doping level and has a thickness higher than a critical thickness of silicon on germanium, such that the interfacial layer is at least partially relaxed. The method further includes forming over the interfacial silicon layer a layer of material having an electrical resistivity smaller than 1×10?2 ?cm, thereby forming an electrical contact between the germanium region and the layer of material, wherein the electrical contact has a specific contact resistivity below 10?4 ?cm2.

Abstract: The embodiments of the present disclosure relate to a micro-fluidic device comprising a substrate, a cavity in the substrate and a plurality of micro-pillar columns located inside the cavity. The micro-pillars columns are configured to create a capillary action when a fluid sample is provided in the cavity. A micro-fluidic channel is present between two 5 walls of any two adjacent micro-pillars in a same micro-pillar column. Each of the two walls comprises a sharp corner along the direction of a propagation path of the fluid sample in the micro-fluidic channel thereby forming a capillary stop valve. A notch provided in a sidewall of the cavity acts as a capillary stop valve.