Abstract: A heterostructure field effect transistor is provided comprising a semiconductor wire comprising in its longitudinal direction a source and a drain region, a channel region in between the source and drain region and in its transversal direction for the source region, a source core region and a source shell region disposed around the source core region, the source shell region having in its transversal direction for the drain region, a drain core region and a drain shell region disposed around the drain core region, the drain shell region having in its transversal direction for the channel region, a channel core region and a channel shell region disposed around the channel core region; wherein the thickness of the channel shell region is smaller than the thickness of the source shell region and is smaller than the thickness of the drain shell region.

Abstract: A sensor for sensing contamination in an application system is disclosed. In one aspect, the sensor comprises a capping layer. The sensor is adapted to cause a first reflectivity change upon initial formation of a first contamination layer on the capping layer when the sensor is provided in the system. The first reflectivity change is larger than an average reflectivity change upon formation of a thicker contamination layer on the capping layer and larger than an average reflectivity change upon formation of an equal contamination on the actual mirrors of the optics of the system.

Abstract: A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.

Abstract: The disclosed technology generally relates to electrostatic discharge protection devices that protect circuits from transient electrical events and more particularly to low-voltage triggered silicon-controlled rectifier devices implemented using a bulk fin field-effect transistor technology. In one aspect, an electrostatic discharge protection device comprises a low-voltage triggered silicon-controlled rectifier having an embedded grounded-gate n-channel metal oxide semiconductor structure implemented as a bulk fin field-effect transistor having a plurality of fin structures. The fin structures direct current from an avalanche zone to a gate formed over the fin structure. The electrostatic discharge protection device has a higher trigger current and a lower leakage current than a similar device having a planar embedded grounded-gate n-channel metal oxide semiconductor structure because the current flow is restricted by the fin structures.

Abstract: The embodiments of the present disclosure relate to a micro-fluidic device comprising a substrate, a cavity in the substrate and a plurality of micro-pillar columns located inside the cavity. The micro-pillars columns are configured to create a capillary action when a fluid sample is provided in the cavity. A micro-fluidic channel is present between two 5 walls of any two adjacent micro-pillars in a same micro-pillar column. Each of the two walls comprises a sharp corner along the direction of a propagation path of the fluid sample in the micro-fluidic channel thereby forming a capillary stop valve. A notch provided in a sidewall of the cavity acts as a capillary stop valve.

Abstract: The present invention relates to a population of monodisperse magnetic nanoparticles with a diameter between 1 and 100 nm which are coated with a layer with hydrophilic end groups. Herein the layer with hydrophilic end groups comprises an inner layer of monosaturated and/or monounsaturated fatty acids bound to said nanoparticles and bound to said fatty acids, an outer layer of a phospholipid conjugated to a monomethoxy polyethyleneglycol (PEG) comprising a hydrophilic end group, or comprises a covalently bound hydrophilic layer bound to said nanoparticles.

Abstract: Described herein is a low-voltage unidirectional bypass element connected across a solar cell and operable to allow current to flow when the operation of the solar cell is suspended. The bypass element includes a single field effect transistor connected between first and second terminals as a switch, and a detection circuit for detecting suspension of the solar cell's operation and activating the switch to bypass the solar cell in the event of its operation suspension. Diodes are connected in parallel with the normally-open switch and receive current, when the solar cell's operation is suspended, to trigger operation of the detection circuit. The detection circuit includes a charge pump, a timer circuit, a control generation unit and a switch control circuit. The switch control circuit generates a control signal to close the switch and to allow current to bypass the solar cell.

Abstract: The disclosure relates to a method for manufacturing a III-V device and the III-V device obtained therefrom. The method comprises providing a semiconductor substrate including at least a recess area and forming a buffer layer overlying the semiconductor substrate in the recess area. The buffer layer includes a binary III-V compound formed at a first growth temperature by selective epitaxial growth from a group III precursor and a group V precursor in the presence of a carrier gas. The first growth temperature is equal or slightly higher than a cracking temperature of each of the group III precursor and of the group V precursor.

Abstract: A method for tuning the effective work function of a gate structure in a semiconductor device is described. The semiconductor device is part of an integrated circuit and the gate structure has a metal layer and a high-k dielectric layer separating the metal layer from an active layer of the semiconductor device. The method includes providing an interconnect structure of the integrated circuit on top of the gate structure, the interconnect structure comprising a layer stack comprising at least a pre-metal dielectric layer comprising a metal filled connecting via connected to the gate structure through the pre-metal dielectric layer, and the interconnect structure having an upper exposed metal portion; and, thereafter, exposing at least a portion of the upper exposed metal portion to a plasma under predetermined exposure conditions, to tune the effective work function of the gate structure.

Abstract: A photonic device having a wavelength-dependent transmission or filter characteristic, comprising: a Splitter Polarization Rotator (SPR) configured to receive an input wave having a first polarization and outputting a first wave having the first polarization and a second wave having a second polarization different from the first polarization; first and second waveguide arms connected to the SPR configured to propagate the first and second waves respectively; and a Polarization Rotator and Combiner for combining the propagated first and second waves; wherein the dimensions of the first waveguide arm and the second waveguide arm are selected to cancel the influence of an external effect on the wavelength-dependent characteristic. Another aspect of the invention relates to a method for reducing the sensitivity of said integrated photonic device, comprising splitting a polarized light beam, propagating light waves of different through two waveguide arms of specific dimensions, and recombining them.

Abstract: Described herein is a pixel readout circuit which provides readout at two sensitivity levels depending on the amount of electrons generated by a pixel photodiode in the circuit. A floating diffusion capacitor operates to store charge up to a saturation value determined by its capacitance and an overflow capacitor is provided in an overflow region for storing charge above the saturation value of the floating diffusion capacitor. Readout at a high sensitivity level is provided when the floating diffusion capacitor is not saturated and readout at a lower sensitivity level is provided when there is saturation and subsequent overflow to the overflow region. Connection of the floating diffusion capacitor to the overflow capacitor shares the charge over the combined capacitance of the two capacitors and provides readout at a lower sensitivity without loss of charge.

Abstract: A method for measuring a concentration of a biogenic substance in a living body includes steps of: preparing an apparatus including a light source, a substrate which has periodic metal structures and generates surface enhanced Raman scattering light by being irradiated with light from the light source, and spectroscopic means which disperses and detects the light, wherein the periodic metal structure is arranged with first and second distances in first and second direction respectively, the first distance is set to generate surface plasmon by matching a phase of the light from the light source, and the second distance is smaller than the first distance and is set between 300 nm and 350 nm; irradiating the substrate with the light from the light source to generate the surface enhanced Raman scattering; detecting the scattering with the spectroscopic means; and calculating the concentration of the biogenic substance based on the scattering.

Abstract: A method of fabricating a field-effect transistor is disclosed. In one aspect, the method includes forming a channel layer comprising germanium over a substrate. The method additionally includes forming a gate structure on the channel layer, where the gate structure comprises a gate layer comprising silicon, and the gate layer has sidewalls above a surface of the channel layer. The method additionally includes forming sidewall spacers comprising silicon dioxide on the sidewalls by subjecting the gate structure to a solution adapted for forming a chemical silicon oxide on materials comprising silicon. The method further includes forming elevated source/drain structures on the channel layer adjacent to the gate structure by selectively epitaxially growing a source/drain material on the channel layer.

Abstract: Quantifying a refractive index of a test medium by obtaining spectral data representative for an optical signal being modulated with an optical transfer characteristics of a photonic sensor, the modulation being obtained by combining modulation of a first electromagnetic wave component in an optical filter element with a first periodic transfer spectrum having a first free spectral range and modulation of a second electromagnetic wave component in an optical filter element with a second periodic transfer spectrum having a second free spectral range being different from the first free spectral range. A relative is change induced in the second periodic transfer spectrum by bringing the test medium in proximity with the optical filter element with the second periodic transfer spectrum. The refractive index of the test medium is quantified by determining a wavelength offset of an envelope signal in said spectral data.

Abstract: A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer, a highly doped source layer, a channel layer, a gate dielectric layer and a gate electrode layer, the gate dielectric layer extending along the source layer, and a highly doped pocket layer extending in between and along the gate dielectric layer and the source layer, characterized in that the pocket layer extends to between and along the source layer and the channel layer.

Abstract: A method for manufacturing a III-nitride HEMT having a gate electrode and source and drain ohmic contacts is provided, comprising providing a substrate; forming a stack of III-nitride layers on the substrate; forming a first passivation layer comprising silicon nitride overlying and in contact with an upper layer of the stack of III-nitride layers, wherein the first passivation layer is deposited in-situ with the stack of III-nitride layers; forming a dielectric layer overlying and in contact with the first passivation layer; forming a second passivation layer comprising silicon nitride overlying and in contact with the dielectric layer wherein the second passivation layer is deposited at a temperature higher than 450° C. by LPCVD or MOCVD or any equivalent technique; and thereafter forming the source and drain ohmic contacts and the gate electrode.

Abstract: Thermally stabilized resonant electro-optic modulator (1), wherein the temperature control unit (8) is provided for separately determining the first and the second intensities measured by the light sensor (6) at the first voltages and the second voltages respectively in function of time.

Abstract: Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least one second electrical conductor along the periphery of the location on the receiving surface of the second component onto which the component is to be placed. The contact areas surrounded by the conductor lines are covered with a wetting layer. The electrical conductor lines may be embedded in a strip of anti-wetting material that runs along the peripheries to create a wettability contrast. The wettability contrast helps to maintain a drop of alignment liquid between the contact areas so as to obtain self-alignment by capillary force.

Abstract: A biopotential signal acquisition system including an analogue readout unit configured to receive an analogue biopotential signal, which may be acquired from at least one electrode attached to a body; and to extract an analogue measured biopotential signal and an analogue reference signal. The system also includes an ADC unit configured to provide a digital version of the analogue measured biopotential signal and the analogue reference signal, a digital filter unit configured to calculate a digital motion artifact estimate based on the digital version of the measured biopotential signal and the reference signal. The system further comprises a reference signal processing unit configured to convert the reference signal into a new reference signal being provided to the digital filter unit based on the correlation between the measured biopotential signal and the reference signal.

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.