Abstract: Disclosed are methods for forming semiconductor devices and the semiconductor devices thus obtained. In one embodiment, the method may include providing a semiconductor wafer comprising a surface, forming on the surface at least one device, forming a release layer at least in an area of the surface that encircles the at least one device, forming on the release layer at least one wall structure around the at least one device, and forming at least one cap on the at least one wall structure. In one embodiment, the device may include a substrate comprising a surface, at least one device formed on the surface, a release layer formed at least in an area of the surface that encircles the at least one device, at least one wall structure formed around the at least one device, and at least one removable cap formed on the at least one wall structure.

Abstract: A method for reducing defects in an active device area of a semiconductor device during fabrication is disclosed. In one aspect, the method comprises providing the active device area adjacent an isolation structure, wherein a substantially planar surface is formed over the isolation structure and the active device area, forming a patterned stress-inducing layer over the substantially planar surface, forming at least one screening layer between the patterned stress-inducing layer and the substantially planar surface, where the screening layer is configured to screen part of the stress field induced by the patterned stress-inducing layer, performing an anneal process after forming the patterned stress-inducing layer on the substantially planar surface, so as to induce a movement of the defects towards a contact interface between the active device area and the isolation structure, and removing the patterned stress-inducing layer from the substantially planar surface.

Abstract: An integrated fluorescence detector for detecting fluorescent particles is described. An example integrated fluorescence detector comprises a substrate, the substrate comprising an integrated detection element for detecting fluorescence radiation from fluorescent particles upon excitation of the particles with incident excitation radiation. The integrated fluorescence detector also comprises a sensing layer adapted for accommodating fluorescent particles to be sensed. The integrated fluorescence detector further comprises a photonics crystal layer arranged in between the sensing layer and the substrate, the photonics crystal layer comprising an absorption material designed such that the photonics crystal layer is configured for diffracting incident excitation radiation into a lateral direction in which the photonics crystal layer extends for incident excitation radiation having a wavelength within at least 10 nm of the predetermined excitation wavelength.

Abstract: A method for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation includes determining a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. Applying the restoration signal further includes taking into account the signal indicative of the change in threshold voltage level.

Abstract: A plasmonic structure comprises a substrate and an electro conductor provided in or on the substrate. The electro conductor comprises a first part configured to provide a first series of plasmon resonance modes (for incident radiation of a first wavelength) and a second part configured to provide a second series of plasmon resonance modes (for incident radiation of a second wavelength). The first and second parts are functionally connected in a linkage region, wherein the electro conductor is shaped such as to form a capacitive gap. The electro conductor is further configured to direct radiation incident on the plasmonic structure of the first wavelength predominantly toward a first direction and to direct radiation incident on the plasmonic structure of the second wavelength predominantly toward a second direction, in which the first direction and the second direction are separated by an angle of at least 60°.

Abstract: A conductive-bridge random access memory device is disclosed comprising a second metal layer configured to provide second metal cations; a layer of insulator adjacent to the second metal layer; the layer of insulator comprising a layer of first insulator and a layer of second insulator; the layer of second insulator being adjacent to the second metal layer; a first metal layer adjacent to the layer of first insulator, the first metal layer being opposite to the second metal layer; wherein the density of the layer of second insulator is higher than the density of the layer of first insulator.

Abstract: The present disclosure relates to a circuit that includes an input port for applying a sinusoidal input signal, and a first buffering means for converting the sinusoidal input signal into a square wave signal. A DC level of the square wave signal may be defined by an adjustable threshold voltage level. The circuit also includes an output port for outputting the square wave signal to a power amplifier. Further, the circuit includes a feedback loop having a low pass filtering means arranged for filtering the square wave signal and comparing means arranged for comparing a DC level of a filtered signal received from the low pass filtering means with a pre-set reference level. The reference level may be selected for cancelling a given harmonic component. The comparing means is further arranged for outputting to the first buffering means a correction signal for adjusting the threshold voltage level of the first buffering means.

Abstract: A method for fabricating Complementary Metal Oxide Semiconductor (CMOS) compatible contact layers in semiconductor devices is disclosed. In one embodiment, a nickel (Ni) layer is deposited on a p-type gallium nitride (GaN) layer of a GaN based structure. Further, the GaN based structure is thermally treated at a temperature range of 350° C. to 500° C. Furthermore, the Ni layer is removed using an etchant. Additionally, a CMOS compatible contact layer is deposited on the p-type GaN layer, upon removal of the Ni layer.

Abstract: A micro-fluidic device 100 for performing digital PCR is presented. The device comprises: a semiconductor substrate; a first micro-fluidic channel 104, comprising an inlet 102 and an outlet 103, embedded in the semiconductor substrate; a heating element 101 thermally coupled to the first micro-fluidic channel 104; a droplet generator 107 connected to the inlet 102 of the first micro-fluidic channel 104 for generating droplets and pumping generated droplets at a flow rate into the first micro-fluidic channel 104; characterized in that: the heating element 101 is a single heating element connected to a temperature control unit 111 configured to cycle the temperature of the complete first micro-fluidic channel 104 through at least two temperature values; and wherein the flow rate of the droplet generator 107 is adaptable. Further, a method to perform digital PCR is presented using the micro-fluidic device 100.

Abstract: A method for creating a pattern on a substrate (101) is presented, the method comprises: providing a substrate (101) comprising silicon; creating a sacrificial layer (102) on the substrate (101), wherein the sacrificial layer is formed on a first surface area (101a) of the substrate thereby leaving a second surface area (101b) exposed; depositing a first functional layer (103) at least on the second surface area (101b) of the substrate (101); removing the sacrificial layer (102); wherein: removing the sacrificial layer (102) is performed by etching the sacrificial layer (102) with an acidic aqueous solution that does not adversely affect the first functional layer (103) and the substrate (101).

Abstract: In a first aspect, a micro-fluidic device is presented, comprising: a micro-fluidic channel having an inner surface; a sensing region inside the micro-fluidic channel configured for adsorbing at least one analyte, the sensing region comprising a plurality of pillars positioned along the length of the inner surface of the micro-fluidic channel wherein the plurality of pillars are configured for creating an electromagnetic field localization thereby making the sensing region suitable for sensing plasmonic or surface enhanced Raman signals when irradiated; characterized in that: the plurality of pillars are further configured for creating a capillary action in the micro-fluidic channel when a fluid sample is present in the micro-fluidic channel.

Abstract: A method is disclosed for packaging a device, e.g., for bio-medical applications. In one aspect, the method includes obtaining a component on a substrate and separating the component and a first part of the substrate from a second part of the substrate using at least one physical process inducing at least one sloped side wall on the first part of the substrate. The method also includes providing an encapsulation for the chip. The resulting packaged chip advantageously has a good step coverage resulting in a good hermeticity, less sharp edges resulting in a reduced risk of damaging or infection after implantation and has a relatively small packaged volume compared to conventional big box packaging techniques.

Abstract: A method for detecting features in digital numeric data comprises obtaining digital numeric data comprising values corresponding to a plurality of sampling points over a domain space having at least one dimension, computing a plurality of scale-space data comprising filtering said digital numeric data using a filter bank, determining a plurality of feature regions each corresponding to a local extremum in scale and location of the scale-space data; and determining a feature region descriptor for each of said plurality of feature regions. The filter bank is a Cosine Modulated Gaussian filter bank in which the standard deviation parameter of the Gaussian equals 1 ? ? ln ? ( 2 ) 2 ? 2 b + 1 2 b - 1 multiplied by the cosine wavelength, in which b is in the range of 0.75 to 1.25, or said filter bank is an Nth-order Gaussian Derivative filter bank with N being in the range of 5 to 20.

Abstract: In one aspect, a method is disclosed that includes providing a substrate having a topography that comprises a relief and providing an anti-reflective film conformally over the substrate using a molecular layer deposition step. The anti-reflective film may be formed of a compound selected from the group consisting of: (i) an organic compound chemically bound to an inorganic compound, where one of the organic compound and the inorganic compound is bound to the substrate and where the organic compound absorbs light at at least one wavelength selected in the range 150-500 nm, or (ii) a monodisperse organic compound absorbing light at at least one wavelength selected in the range 150-500 nm. The method further includes providing a photoresist layer on the anti-reflective film.

Abstract: The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas.

Abstract: A method is described for improving the uniformity over a predetermined substrate area of a spectral response of photonic devices fabricated in a thin device layer. The method includes (i) establishing an initial device layer thickness map for the predetermined area, (ii) establishing a linewidth map for the predetermined area, and (iii) establishing an etch depth map for the predetermined area. The method further includes, based on the initial device layer thickness map, the linewidth map and the etch depth map, calculating an optimal device layer thickness map and a corresponding thickness correction map for the predetermined substrate area taking into account photonic device design data. Still further, the method includes performing a location specific corrective etch process in accordance with the thickness correction map.

Abstract: The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises obtaining a titanium nitride element and hydrothermally treating the titanium nitride element by immersing the titanium nitride element in a liquid comprising water while heating said liquid.

Abstract: A buffering circuit for buffering an oscillator signal. The buffering circuit includes a plurality of PMOS and NMOS transistor pairs connected in parallel, each pair having connected gate terminals and connected drain terminals forming an inverter circuit, each pair arranged for receiving via a direct coupling an oscillator signal at its gate terminal, and each pair further being connected with an additional PMOS and NMOS transistor.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: A communication device is disclosed. The device may be in particular a radio transmitter and a receiver that can operate with low power consumption and with improved interference rejection, therefore particularly suitable for use in low-power communication systems, such as wireless sensor networks and wireless body area networks. In one aspect, multiple frequency tones (carriers) are used to carry information from the transmitter, such that a RF signal having multiple radio frequency components is produced and transmitted. In the receiver, an envelope detector is still the RF down-converter. After down-converting intermodulation components are extracted containing amplitude, phase and frequency information of the multiple radio frequency components. This allows the desired signal (the baseband information) to be distinguished from the carriers and unwanted interference.