Abstract: A CAM circuit utilizes a relatively high operating voltage to control the memory portion of each CAM cell, and a relatively low operating voltage to control at least some of the logic portions of each CAM circuit. The CAM cell memory portion includes a memory (e.g., SRAM) cell controlled by a word line to store data values transmitted on complementary bit lines. The CAM cell logic portion includes a comparator that compares the stored data values with an applied data value transmitted on complementary data lines, and discharges a match line when the stored data value differs from the applied data value. The memory cell is driven using the relatively high memory operating voltage (e.g., 2.5 Volts) such that the stored charge resists soft errors. The complementary data lines and match line used to operate the comparator are driven using the relatively low logic operating voltage (e.g., 1.2 Volts) to conserve power.

Abstract: A CAM circuit utilizes a relatively high operating voltage to control the memory portion of each CAM cell, and a relatively low operating voltage to control at least some of the logic portions of each CAM circuit. The CAM cell memory portion includes a memory (e.g., SRAM) cell controlled by a word line to store data values transmitted on complementary bit lines. The CAM cell logic portion includes a comparator that compares the stored data values with an applied data value transmitted on complementary data lines, and discharges a match line when the stored data value differs from the applied data value. The memory cell is driven using the relatively high memory operating voltage (e.g., 2.5 Volts) such that the stored charge resists soft errors. The complementary data lines and match line used to operate the comparator are driven using the relatively low logic operating voltage (e.g., 1.2 Volts) to conserve power.

Abstract: A system is provided that includes a bus master, a bus slave and a fly-by slave interface, all coupled to a peripheral bus. A peripheral device is coupled to the fly-by slave interface. The bus master is configured to control fly-by transfer of data between the bus slave and the peripheral device without buffering the data. The fly-by slave interface is configured to isolate the peripheral device from the peripheral bus during fly-by transfer of data between the bus slave and the peripheral device. In addiction, the bus slave is configured to provide a set of control signals on the peripheral bus, wherein the control signals regulate the flow of data on the peripheral bus during fly-by transfer of data between the bus slave and the peripheral device. Fly-by transfers can be fully synchronous, and burst operation at the rate of one data value per clock cycle is supported.

Abstract: Content addressable memory (CAM) devices provide improved reliability by inhibiting disabled CAM cells within defective (or unused redundant columns) from contributing to either sustained or intermittent look-up errors when the CAM device is operated in an intended application. The improved reliability may be achieved in volatile CAM devices by configuring (e.g., programming) each column driver that is associated with a CAM array having a defective column therein to preserve intentionally written data and/or mask values of the disabled CAM cells across repeated power reset events.

Abstract: Integrated circuit charge pumps reduce parasitic charge injection from signals that drive control inputs of the charge pumps. This reduction in parasitic charge injection can be utilized to lower phase error when the charge pumps are used in phase-locked loops (PLLs). A charge pump may include an output current source and a control circuit that drives the output current source with control signals in a preferred manner. The output current source may include a totem pole driver therein. This totem pole driver includes at least an upper PMOS supply transistor and a lower PMOS current source transistor that are disposed in series in a pull-up path extending between an output of the driver and a power supply line (e.g., Vdd). The control circuit may include a pull-up control circuit that is configured to drive a gate of the upper PMOS supply transistor with a PMOS turn-on voltage in response to a leading edge of a pull-up control signal.

Abstract: Disclosed are methods and systems for forming salicide, in which a semiconductor substrate is provided with at least one exposed silicon surface. The semiconductor substrate is placed into a sputtering chamber. A silicide-forming metal layer, formed of a metal such as Co, Ni, is sputter-deposited over the exposed silicon surface. A process temperature is controlled below room temperature during the sputter deposition and preferably between approximately 0° C. to 10° C. The silicide-forming metal layer formed on the exposed silicon surface is first annealed to convert the silicide-forming metal layer into a salicide layer. Also, the system of the present invention is comprised of a sputter chamber including a mount for mounting a semiconductor substrate and a cooling mechanism coupled with the mount for cooling the semiconductor substrate. The cooling mechanism includes a controller to maintain a process temperature below room temperature.

Abstract: A static random access memory (SRAM) cell is given increased stability and latch-up immunity by fabricating the PMOS load transistors of the SRAM cell to have a very low drain/source dopant concentration. The drain/source regions of the PMOS load transistors are formed entirely by a P−− blanket implant. The PMOS load transistors are masked during subsequent implant steps, such that the drain/source regions of the PMOS load transistors do not receive additional P-type (or N-type) dopant. The P−− blanket implant results in PMOS load transistors having drain/source regions with dopant concentrations of 1e17 atoms/cm3 or less. The dopant concentration of the drain/source regions of the PMOS load transistors is significantly lower than the dopant concentration of lightly doped drain/source regions in PMOS transistors used in peripheral circuitry.

Abstract: A First-In-First-Out (FIFO) memory device includes a FIFO memory block, a data input interface that writes data into the FIFO memory block in synchronization with a first clock, and a data output interface that reads the data from the FIFO memory block in synchronization with a second clock. The data input interface provides a first indication to the data output interface that the received data has been written into the FIFO memory block. The first indication persists until reset by the data output interface. The data output interface provides a second indication to the data input interface that the received data has been read from the FIFO memory block. The second indication persists until reset by the data input interface.

Abstract: An enhanced translation lookaside buffer (TLB), which translates a virtual address into a physical address, permits sharing of data or programs among a subset of all tasks through the use of a group membership field. Each entry in the TLB includes a global bit indicating that all tasks should have access to the translation, an address space identifier identifying an individual task that should have access to the translation and a group membership field identifying a group of tasks that have access to the entry, wherein the group of tasks is a subset of all tasks. The virtual address also has a group membership field that is compared with a group membership field in the TLB entry. If the two group membership fields match, the current task is permitted to use the translation. Thus, a given translation within the TLB may be valid for all tasks, only an individual task, or a group of tasks.

Abstract: A memory system including a memory array, an input circuit and a logic circuit is presented. The input circuit is coupled to receive a memory address and a set of individual write controls for each byte of data word. During a write operation, the input circuit also receives the corresponding write data to be written into the SRAM. The logic circuit causes the write data and write control information to be stored in the input circuit for the duration of any sequential read operations immediately following the write operation and then to be read into memory during a subsequent write operation. During the read operation, data which is stored in the write data storage registers prior to being read into the memory can be read out from the memory system should the address of one or more read operations equal the address of the data to be written into the memory while temporarily stored in the write data storage registers.

Abstract: A first insulating layer (12) overlying semiconductor substrate (10) has a plurality of conductive paths (14, 16) disposed thereon. Each of the plurality of conductive paths has at least a major portion thereof overlied with a second insulating layer (20). A third insulating layer (26), having air gap ports (28) formed therein, overlies adjacent conductive paths and extends from one to another such that an air gap (34) is formed. A passivation layer (30) overlies third insulating layer and seals the plurality of air gaps ports to form an insulation structure (40) for a semiconductor integrated circuit, and method thereof.

Abstract: A content addressable memory with programmable priority weighting and low cost match detection is described. A CAM array provides match and no-match indications of an input data word to a weight array. The weight array generates a forced match with an assigned weight that is lower than those assigned to match and no-match indications received from the CAM array. The weight array determines a winning match among the received match indications and the forced match according to their assigned weights, and provides an indication of the winning match to an encoder. The encoder provides an address of the winning match, and a match detect output which is generated from the success or lack thereof of the forced match being determined the winning match.

Abstract: Flip-flops include a master stage and a slave stage. The master stage is responsive to a first clock signal and has a first pair of differential inputs and a first pair of differential outputs. The slave stage is responsive to a second clock signal and has a second pair of differential inputs coupled to the first pair of differential outputs and a second pair of differential outputs from which true and complementary outputs (Q, QB) of the flip-flop are derived. If the flip-flop is a D-type flip-flop, the first pair of differential inputs receive true and complementary data signals (DATA, DATAB). If the flip-flop is a set-reset (S-R) flip-flop, the first pair of differential inputs receive set and reset signals (SET, RESET).

Abstract: Integrated output driver circuits have sourcing and sinking current characteristics that reduce power (Vdd) and ground (Vss) bounce effects by making the dl/dt characteristic of the sourcing current to a load and/or sinking current from the load more nearly uniform during a pull-up or pull-down driving event. Improved speed characteristics can also be achieved using capacitive bootstrapping to quickly turn on a NMOS pull-down transistor, which controls the sinking current from the load, and/or PMOS pull-up transistor, which controls the sourcing current to the load.

Abstract: A novel gate structure and a method of forming the same for a self-aligned contact on a semiconductor substrate. The method includes forming a gate oxide layer on the semiconductor substrate. Then a first conductive layer is formed on the gate oxide layer. Next, a second conductive layer, preferably a refractory metal silicide (e.g. WSix), is formed overlying the first conductive layer. A capping layer is formed overlying the second conductive layer. Then the capping layer is etched to form a patterned capping layer having a lower outside corner. An upper portion of the second conductive layer is selectively dry etched laterally to form a lateral recess under the capping layer to increase etch margin. A lower portion of the second conductive layer is then etched anisotropically down to the first conductive layer along a sidewall approximately vertically aligned with the lower outside corner of the patterned capping layer.

Abstract: A memory system includes a memory, an input circuit and a logic circuit. The input circuit is coupled to receive a memory address and, during a write operation, the corresponding write data to be written into the SRAM. The logic circuit causes the write data to be stored in the input circuit for the duration of any sequential read operations immediately following the write operation and then to be read into the memory during subsequent write operation. During the read operation, data which is stored in the write data storage registers prior to being read into the memory can be read out from the memory system should the address of one or more read operations equal the address of the data to be written into the memory while temporarily stored in the write data storage registers. Thus, no “bus turnaround” down time is experienced by the system thereby increasing the bandwidth of the system. The system can operate in a single pipeline mode or a dual pipeline mode.

Abstract: A DRAM circuit including a first DRAM array used solely for refresh operations, and the second DRAM array for performing logic operations that is refreshed using data read from the first DRAM array. Specifically, data is read only from the first DRAM array during a read phase of the refresh operation, and is written to both the first DRAM array and the second DRAM array during the write phase of the refresh operation. Accordingly, the second DRAM array is able to simultaneously perform any type of logic operation without delay or disturbance caused by accessing the second DRAM array during the read phase. In one embodiment, the second DRAM array includes DRAM CAM cells that perform data matching operations using the data refreshed from the first DRAM array, which includes conventional DRAM memory cells.

Abstract: A method for using a moisture-protective container to protect an integrated circuit is disclosed herein. The integrated circuit is placed into a container having a first surface and a second surface that is opposite the first surface, and then the container is closed with a seal. Next, the seal is broken to remove the integrated circuit for evaluation. After evaluation without subjecting the integrated circuit to burn-in, the integrated circuit is restored to the container and the container is resealed with the seal. Lastly, the seal of the container is broken to connect the integrated circuit to a substrate without elevating the temperature surrounding the integrated circuit above the temperature at which evaluation occurred.

Abstract: A CAM circuit including a RAM array, a CAM array, and a control circuit that systematically writes data from the RAM array to the CAM array, thereby preventing soft errors by continually restoring data that has been corrupted by radiation. The RAM and CAM arrays can be formed on the same substrate, but are preferably fabricated on separate substrates and mounted in a single package or on a PCB. Both the CAM and RAM can be formed using any conventional memory type (e.g., SRAM, DRAM, NVRAM), and the CAM array can be a binary, ternary, or quad CAM array. The CAM and RAM arrays can be formed on different substrates, or the same substrate. A system including an SRAM ternary CAM array and a RAM array perform quad CAM functions by performing read functions utilizing only the RAM array, while performing lookup functions using the ternary CAM array.

Abstract: A fast switching device for passing or blocking signals between two input/output ports includes a transistor having a first and a second terminal and a control terminal. The first and second terminals are connected between the two ports. The transistor passes signals between the ports when the transistor is turned on and blocks the passage of signals between the ports when the transistor is turned off. The resistance between the first and second terminals is less than about 10 ohms when the transistor is turned on. The device further includes a driver for controlling the control terminal of the transistor for turning it on or off. Preferably the capacitance between the first or second terminal and a reference potential is less than about 50 pF.