Abstract: A method of designing an integrated circuit includes receiving as input a representation of a circuit design and a margin factor and scaling a parameter value in the circuit design by the margin factor to account for coupling in the circuit design. The margin factor advantageously reduces the number of iterations in the design flow and avoids the necessity of cross-talk analysis.

Abstract: The present invention may generally provide a processor circuit comprising a processor, a first bus, a bus pipeline stage, and a second bus. The first bus may be coupled to the processor. The bus pipeline stage may be coupled between the first bus and the second bus and configured to delay an access between the first bus and the second bus at least one pipeline cycle.

Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate a first composited data signal and a second composited signal in response to a first data signal having a first chroma format and a second data signal having a second chroma format. The second circuit may be configured to generate a first composited output signal having the first chroma format in response to the first and the second composited data signals.

Abstract: A wafer chuck assembly for a semiconductor wafer processing device has axially movable wafer support pins associated with a wafer chuck body of the wafer chuck assembly. The wafer support pins are biased to contact and support the backside of a semiconductor wafer when the semiconductor wafer is placed and/or maintained (typically via air suction) on the wafer chuck assembly. Each support pin axially moves independent of one another such that any area of contamination on the backside of the semiconductor wafer that registers with a support pin, moves the affected support pin axially downwardly.

Abstract: A single-stage grooming switch is provided for switching streams of multiplexed traffic, such as SONET STS-48, in both time and space domains. In particular, the switch implements a distributed demultiplexing architecture for switching between any input timeslot to any output timeslot at a reduced layout size. Furthermore, the distributed demultiplexing architecture results in low latencies being associated with reconfiguration of output permutations on the order of nanoseconds.

Abstract: A method for adaptively providing parametric limits to identify defective die quantizes the die into a plurality of groups according to statistical distributions, such as intrinsic speed in one embodiment. For each quantization level, an intrinsic distribution of the parameter is derived. Adaptive screening limits are then set as a function of the intrinsic distribution. Dies are then screened according to their parametric values with respect to the adaptive limits.

Abstract: A flip chip ball grid array package includes a thin die having a die thickness reduced from a wafer thickness to reduce mismatch of a coefficient of thermal expansion between the thin die and a substrate; a plurality of thin film layers formed on the thin die wherein each of the plurality of thin film layers has a coefficient of thermal expansion that is greater than that of the thin die and is less than that of the substrate; and a plurality of wafer bumps formed on the thin die for making electrical contact between the thin die and the substrate.

Abstract: A method for estimating decoupling capacitance during an ASIC design flow is disclosed. The method includes precharacterizing a set of power grid structures to model their respective noise behaviors, and storing the respective noise behaviors as noise factors in a table. During the ASIC design flow for a current design that includes at least one of the precharacterized power grid structures, the corresponding noise factor from the table is used to calculate decoupling capacitance for the current design.

Abstract: The method of the present invention decodes a received symbol that represents data bits including message bits and parity-check bits. The method comprises (a) mapping the symbol onto a received signal point in a signal space, the signal point having an in-phase component (I) and a quadrature phase component (Q) in the signal space; (b) computing reliability information for each data bit, the reliability information associated with a distance di={square root over ((I−Ii)2+(Q−Qi)2)} between the received signal point (I, Q) and a reference constellation point (Ii, Qi) in the signal space, where i=0, 1, . . .

Abstract: A method for forming a conductive trace on a substrate. The conductive trace is patterned with a photoresist mask and etched, thereby forming a polymer layer on a top surface and sidewalls of the photoresist mask and on sidewalls of the conductive trace. The polymer layer contains entrained chlorine gas. The substrate is heated on a chuck in a reaction chamber. A remote plasma is generated from ammonia gas and oxygen gas. The substrate is contacted with the ammonia and oxygen plasma, thereby withdrawing a substantial portion of the entrained chlorine gas from the polymer layer. A radio frequency potential is applied to the chuck on which the substrate resides, thereby creating a reactive ion etchant from the ammonia and oxygen plasma in the reaction chamber and removing the polymer layer from the top surface of the photoresist mask. The photoresist mask is thus exposed, and then removed in an ashing process.

Abstract: A method for composing a dielectric layer within an interconnect structure of a multilayer semiconductor device is disclosed. A layer of silica precursor material is first deposited on a silicon substrate. Without affecting its structure and porosity, the layer of silica precursor material is then dried; and the layer of silica precursor material becomes porous silica film. Subsequently, a protective layer, such as parylene, is deposited on top of the dried porous silica film. The thickness of the protective layer should be greater than the peak-valley planarization requirements of the silicon substrate surface. As a result, a composite porous silica film, which services as a dielectric layer within an interconnect structure, is formed. This composite porous silica film has a relatively low dielectric constant and is able to withstand damage from a standard CMP procedure.

Abstract: Fuses, and optionally metal pads, are formed over a layer of low k dielectric material structure having first openings lined with conductive barrier material and filled to form metal interconnects in the upper surface of the low k dielectric material. A dielectric layer is formed over the low k dielectric material and over the metal interconnects, and patterned to form second openings therein communicating with the metal interconnects. A conductive barrier layer is formed over this dielectric layer in contact with the metal interconnects, and patterned to form fuse portions between some of the metal interconnects, and a liner over one or more of the metal interconnects. A dielectric layer is then formed over the patterned conductive barrier layer to form a window above each fuse, and patterned to form openings over at least some of the conductive barrier liners filled with metal to form metal pads.

Abstract: An electronic bus architecture for supporting posting of read requests by multiple master devices to multiple slave devices. Sideband signals added to the underlying master bus architecture permit slave devices to receive posted read requests from one or more master devices. The sideband signals are used by the slave devices and associated arbitration logic to enable the slave devices with varying latencies to return requested data to the originating masters when the data becomes available. The sideband slave bus architecture may be applied to enhance performance of AMBA based bus architectures as well as other well-known bus architectures supporting one or more master devices.

Abstract: A semiconductor device wherein Si-Ge is the base of a bipolar transistor and a Silicon layer is the emitter. A method of making such a semiconductor device including steps of forming a Silicon dioxide layer on a Silicon substrate, using a photo resist application and exposure to define where a HBT device will be placed. Plasma etching the Silicon dioxide layer to define an undercut, epitaxially growing an Si-Ge layer and a Silicon layer, and continuing manufacture to form one or more bipolar and CMOS devices and define interconnect and passivation.

Abstract: A memory module is formed on an integrated circuit by arranging memory cells in columns, and routing signal wires from module pins at an edge of the module to respective memory cells. The module pins are optimally positioned relative to the memory cells, and routing wires extend from the pins along routing lines to the cells. Buffer channels are defined between memory cells and orthogonal to the columns, and buffers are selectively inserted into the routing wires in the buffer channels by placing a plurality of buffers in each buffer channel. Signal wires to be buffered at a buffer channel are identified, and the signal wires are routed through each buffer channel so that (i) a signal wire to be buffered is re-routed to an input and output of a buffer, and (ii) all other signal wires are routed along their respective routing lines.

Abstract: A level shifter circuit configured for use between a core of a chip and input/output transistor of the chip in order to shield low voltage devices residing on the core. The level shifter circuit includes voltage tolerant native devices which have VDDCORE on their gates, and each voltage tolerant native device is cascoded with a low voltage transistor on the core.

Abstract: An intelligent host adapter for coupling a host PC to peripheral I/O devices through I/O channels wherein the host adapter has a master/slave architecture. A master I/O processor includes circuits for coupling the host adapter to a slot in an I/O interface bus of the host PC such as a PCI bus. The master I/O processor also includes circuits for a relatively small fixed number of I/O channels for connection to associated I/O peripheral busses such as SCSI, Fiber Channel and networks (i.e., Ethernet, token ring, etc.). A slave I/O processor is coupled to the master I/O processor via a dedicated master/slave interface bus. The slave I/O processor provides for addition of I/O channels to the host adapter without requiring use of additional slots of the I/O interface bus of the host PC and without using associated I/O computing resources within the host PC.

Abstract: A method of forming electrically conductive elements on a base layer of an electronic substrate without the use of solder mask. A layer of electrically conductive material is deposited on the base layer, and a first layer of photo imageable ink is applied over the electrically conductive material layer. The first layer of photo imageable ink is patterned to expose portions of the electrically conductive material layer, which are then etched to resolve traces in the electrically conductive material layer. The first layer of photo imageable ink is removed, and a second layer of photo imageable ink is applied over the traces and channels between the traces. The second layer of photo imageable ink is then patterned to expose the traces, and a third layer of photo imageable ink is applied over the traces and the second layer of photo imageable ink. The third layer of photo imageable ink is patterned to expose deposition sites on the traces, within which are formed electrically conductive fingers.

Abstract: A gate array integrated circuit is provided, which includes first and second voltage supply rails and a row of P-channel type transistors and adjacent N-channel type transistors located between first and second voltage supply rails. Adjacent ones of the P-channel and N-channel transistors have common control terminals. A multiple-bit memory cell is fabricated in the row and includes first and second latches, a read output, a first pass gate coupled between the first latch and the read output, and a second pass gate coupled between the second latch and the read output. The first pass gate includes a first one of the P-channel or N-channel transistors. The second pass gate includes a second one of the same type of the P-channel or N-channel transistors. The first and second same type transistors share a common diffusion region.

Abstract: A variational method is used for calculating resistance of a conductor layer for an integrated circuit design, the conductor layer having a geometric shape defined by boundary edges. The method includes (a) partitioning the geometric shape into a plurality of rectangular regions, (b) determining at least one source edge and at least one sink edge from among the boundary edges, a current entering the conductor layer through the source edge(s) and leaving the conductor layer through the sink edge(s), (c) setting boundary conditions with respect to the current for each of the rectangular regions, (d) calculating power for each of the rectangular regions with the boundary conditions, (e) calculating power for the conductor layer based on the power and the boundary conditions of each of the rectangular regions, and (f) obtaining the resistance of the conductor layer by minimizing the power dissipation of the conductor layer.