Abstract: A composite layer of low k silicon oxide dielectric material is formed on an oxide layer of an integrated circuit structure on a semiconductor substrate having closely spaced apart metal lines thereon. The composite layer of low k silicon oxide dielectric material exhibits void-free deposition properties in high aspect ratio regions between the closely spaced apart metal lines, deposition rates in other regions comparable to standard k silicon oxide, and reduced via poisoning characteristics. The composite layer of low k silicon oxide dielectric material is formed by depositing, in high aspect ratio regions between closely spaced apart metal lines, a first layer of low k silicon oxide dielectric material exhibiting void-free deposition properties until the resulting deposition of low k silicon oxide dielectric material reaches the level of the top of the metal lines on the oxide layer.

Abstract: The inter-symbol interference problem is reduced by detecting a data sequence indicating when a boost is needed on a ‘short pulse’, usually the first data pulse of the opposite polarity after a string of data pulses of the same value. A data decoder that detects when current compensation is required and an output driver that has the variable drive capability to change the drive current on the short pulse is used to boost the amplitude. The output driver is regulated by a phase locked loop which includes a voltage variable delay digitally controlled voltage variable reference capacitors in the phase locked loop circuit for receiving data from memory that contains the proper capacitor control voltage needed. The time required to charge the capacitor is constant and the delay is slaved to the clock period.

Abstract: A circuit for reducing the number of bits in a K bit value from K to N bits. The circuit generally comprises a first summing circuit, a control circuit, an error feedback circuit, a second summing circuit, and a processor. The first summing circuit may add an error offset value and the N+m MSB's of the K bit value to produce a result data value. The control circuit may generate a dither offset value. The error feedback circuit may receive m LSBs of the result data value and generate an error value in dependence on the m LSBs. The second summing circuit may add the dither offset value and the error value to provide the error offset value. The processor may selectively control generation of the dither offset value and the error value.

Abstract: A slave device receives commands from a master device for execution on a first-in, first-out basis. A status register is responsive to a queue of commands to provide a COMMAND_STATUS_FULL signal when the queue is full of commands. A configuration register provides a SHUT_DOWN signal identifying a shutdown status of the slave device. A bus control is responsive to the command and to either the COMMAND_STATUS_FULL or SHUT_DOWN signal to idle the data bus and deny the requesting master device access to the data bus if the command is for a non-locked transfer, or to stall the data bus if the command is for a locked transfer request.

Abstract: An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a plurality of first motion vectors and first error scores in response to a search of a macroblock of an image. The search generally comprises a range of motion vectors of the macroblock. The second circuit may be configured to generate a plurality of second motion vectors and second error scores for a plurality of sub-blocks of the macroblock in response to a set of discrete candidate motion vectors selected from the plurality of first motion vectors. The third circuit may be configured to segment the macroblock in response to (i) the plurality of first motion vectors and first error scores and (ii) the plurality of second motion vectors and second error scores.

Abstract: An apparatus generally having a register, an adder circuit and a mask circuit is disclosed. The register may be configured to replace a current value with a new value in response to a clock value. The adder circuit may be configured to generate the new value by adding the current value to a delta value. The mask circuit may be configured to mask at least one value among the delta value, the new value and the clock value in response to a mask value having a plurality of bits.

Abstract: A system which includes a DMA (Direct Memory Access) interface and a MAC (Media Access Control) interface. A data FIFO and data burst information FIFO are disposed between the DMA interface and the MAC interface, and the system is configured to provide that information contained in the data burst information FIFO is used to discard unwanted data contained in the data FIFO, such that the unwanted data does not forward to the DMA interface. This facilitates fast and efficient data transfer, and avoids wasting (i.e. optimizes) DMA bandwidth. Additionally, this avoids or at least reduces the likelihood of FIFO overflow.

Abstract: A method and apparatus are provided for testing linearity of two or more programmable delay chains in an integrated circuit. A first delay chain is successively programmed to a first sequence of delay settings and, for each delay setting in the first sequence, a second delay chain is successively programmed to a second sequence of delay settings. The second sequence sweeps a propagation delay through the second delay chain from a delay value less than a present propagation delay through the first delay chain to a delay value greater than the present propagation delay. For each delay setting of the second delay chain, a logic transition is applied to inputs of the first and second delay chains and the output of one of the first and second delay chains is latched as a function of the output of the other of the first and second delay chains to produce a sample value.

Abstract: A method for marking a wafer that is cut from a boule. A surface of the boule is marked with an encoded marking that extends completely along a distance of the boule that is used for cutting wafers. The encoded marking is disposed substantially parallel to a length axis of the boule. The wafer is cut from the boule from within the distance, such that the encoded marking along the surface of the boule is disposed at a peripheral edge of the wafer. The encoded marking contains information in regard to the wafer.

Abstract: A bonding pad structure having an electrically conductive capping layer. An electrically conductive first supporting layer is disposed immediately under the electrically conductive capping layer, without any intervening layers between the electrically conductive capping layer and the electrically conductive first supporting layer. The electrically conductive first supporting layer is configured as one of a sheet having no voids and a sheet having slotted voids in a first direction. An electrically conductive second supporting layer is disposed under the electrically conductive first supporting layer. The electrically conductive second supporting layer is configured as one of a sheet having slotted voids in the first direction, a sheet having slotted voids in a second direction, and a sheet having checkerboard voids.

Abstract: A circuit generally comprising an interface circuit and an arbitration circuit is disclosed. The interface circuit may be couplable between a peripheral device and a plurality of ports. The arbitration circuit may be coupled to the interface circuit. The arbitration circuit may be configured to (i) store a plurality of associations between a plurality of time slots and the ports, (ii) check the associations in a subset comprising at least two of the time slots in response to receiving an arbitration request from a first requesting port of the ports, and (iii) generate a grant for the first requesting port to communicate with the peripheral device in response to the first requesting port matching at least one of the associations in the subset.

Abstract: An apparatus comprising a transmit data path, a receive data path, a first circuit and a second circuit. The first circuit may be configured to transfer data between a first interface and the transmit and receive data paths. The second circuit may be configured (i) to transfer the data between the transmit and receive data paths and a second interface and (ii) to control a configuration update of the first and second circuits in response to a plurality of control signals. The configuration of the first and second circuits is generally dynamically updated.

Abstract: An integrated circuit is provided which includes at a first, a second, or a third row of bonding pads. A plurality of trace conductors is provided to route the signal of each bonding pad to an I/O ring and/or a core. The trace conductors of different metal widths are configured on a separate and distinct metal layers such that routing may be done above or below the bonding pad rows and other trace conductors. A plurality of vias is provided to connect between the different metal layers. This allows multiple rows of bonding pads to be arranged on the perimeters of the core without having to compromise for small pitch distances or longer routing paths.

Abstract: A circuit controls an oscillation amplitude of a crystal oscillator including a crystal resonator, a current source supplying a bias current, and an output transistor coupled to the crystal resonator and the current source. The circuit includes a peak detector for detecting a peak voltage of an output signal of the crystal oscillator, and a controller coupled to the peak detector and to the current source for controlling the current source in accordance with a difference between the peak voltage and a target voltage, the target voltage being set to be substantially equal to 2Vth, where Vth is a threshold voltage of the output transistor. A frequency control circuit controls a first switched-capacitor array and a second switched-capacitor array coupled to the crystal resonator, and alternately switches a unit capacitor in the first switched-capacitor array and a unit capacitor in the second switched-capacitor array based on a frequency control signal.

Abstract: A method of calculating skews for memory cells and flip-flops in a circuit design to reduce peak power includes receiving a circuit design containing memory cells and other clocked cells; constructing a first graph that includes a union of all inputs, vertices representative of the memory cells and the other clocked cells, a union of all outputs, and edges between the vertices each having a length equal to a delay between corresponding vertices minus a clock period; constructing a second graph having vertices representative of only the memory cells and corresponding edges such that the maximum length between any two corresponding vertices is less than zero; calculating a skew for each of the memory cells from the second graph; constructing a third graph from the first graph by merging the vertices of the memory cells into a single vertex; calculating a skew for each of the other clocked cells from the third graph; normalizing each skew calculated for the other clocked cells; recalculating the skew for each of

Abstract: A method is presented for built-in redundancy analysis of a semiconductor memory device. The method does not require retention of an entire memory bitmap, and may be implemented on-chip and integrated within existing BIST circuitry. The regular memory is comprehensively tested, and defective rows and columns are flagged for replacement by redundant rows and/or columns; the elements containing the most defects are the first to be flagged. If all of the defective memory locations can be replaced using redundant rows and columns, the method designates the memory as repairable; a repair solution may then be scanned out of the memory device. The method is believed to provide a fast, cost-effective means of testing and repairing memory devices, with a consequent improvement in production yields.

Abstract: A method of performing data shifts in a data processing system between a source and a plurality of destinations using a direct memory accessing scheme, comprising the steps of: (A) reading a data block from the source destinations; (B) writing the data block to a first of the plurality of destinations; and (C) writing the data block to a second of the plurality of destinations. Addresses of the first and second destinations are previously stored.

Abstract: An architecture is described having characteristics, scale and realized according to a minimized cost function with the ability to control and govern liability, availability, band width, capacity and quality of service as one pleases subject to a desired type of management software or framework.

Abstract: A method of determining temperature of a semiconductor wafer during wafer fabrication includes the step of providing a response circuit on the semiconductor wafer. The method also includes the step of transmitting an interrogation signal with a signal transceiver so as to excite the response circuit. The method further includes the step of receiving a response signal which was generated by the response circuit as a result of excitation thereof. In addition, the method includes the step of determining temperature of the semiconductor wafer based on the response signal. Moreover, the method includes the step of fabricating a circuit layer on the semiconductor wafer. Both the transmitting step tri and the receiving step are performed contemporaneously with the fabricating step. An apparatus for determining temperature of a semiconductor wafer during wafer fabrication is also disclosed.

Abstract: A capping layer of an insulator such as silicon oxynitride is formed over horizontally closely spaced apart metal lines on an oxide layer of an integrated circuit structure formed on a semiconductor substrate. Low k silicon oxide dielectric material which exhibits void-free deposition properties in high aspect ratio regions between the closely spaced apart metal lines is then deposited over and between the metal lines and over the silicon oxynitride caps on the metal lines. After the formation of such void-free low k silicon oxide dielectric material between the closely spaced apart metal lines and the silicon oxynitride caps thereon, the structure is planarized to bring the level of the low k silicon oxide dielectric material down to the level of the tops of the silicon oxynitride caps on the metal lines. A further layer of standard k silicon oxide dielectric material is then formed over the planarized void-free low k silicon oxide dielectric layer and the silicon oxynitride caps.