Abstract: Apparatuses for timing control in a write path are disclosed. An example apparatus includes: a clock input circuit that receives a clock signal and provides an internal clock signal; a command decoder that receives command signals and the internal clock signal, and provides an active write command signal when the command signals indicates a write operation; a write latency shifter that receives the write command signal, a latency value and a WICA value, adjusts timing of the write command signal responsive to the latency value and the WICA value, and provides a shifted write command signal; and a write DLL including a delay line that receives the shifted write command signal and provides a delayed write command signal. The write DLL provides the WICA value to set a propagation time from the clock input circuit to the write DLL to be a multiple of a period of the clock signal.

Abstract: A system to progressively generate responses configured to mitigate risk associated with row hammer attacks. Between two successive refreshing of memory cells in a memory device, increasing thresholds are used to detect row hammer attacks. For example, after a first alert of row hammer attacks is generated using a first lower threshold, a first operation associated with the first lower threshold is initiated to mitigate risk associated with row hammer attack; and a second higher threshold is used to detect row hammer attacks. After a second alert of row hammer attacks is generated using the second lower threshold, a second operation associated with the second lower threshold is initiated to mitigate risk associated with row hammer attack.

Abstract: Some embodiments include an integrated assembly having a first graphene-containing-material offset from a second graphene-containing-material. The first graphene-containing-material includes a first graphene-layer-stack with first metal interspersed therein. The second graphene-containing-material includes a second graphene-layer-stack with second metal interspersed therein. A conductive interconnect couples the first and second graphene-containing materials to one another.

Abstract: Methods, systems, and devices for row address latching for multiple activate command protocol are described. A memory device may receive a first activate command that indicates a first set of bits of a row address and may store the first set of bits to obtain a first delayed signal of the first set of bits. The memory device may receive a second activate command that indicates a second set of bits of the row address and may store the second set of bits to obtain a first delayed signal of the second set of bits. The memory device may store the first delayed signal of the first set of bits to obtain a second delayed signal of the first set of bits and may activate a page of memory addressed according to the second delayed signal and the first delayed signal of the second set of bits.

Abstract: Provided is a memory system comprising a plurality of memory components; and a controller in communication with the plurality of memory components and configured to perform error correction code (ECC) decoding on a received word read from the plurality of memory components. The ECC decoding is configured to (i) detect one or more random errors in a portion of the received word, the portion corresponding to one of the components within the plurality, and (ii) correct the detected random errors; and when the correcting of the detected random errors fails, iteratively marking symbols in the remaining portions of the received word as erasures.

Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

Abstract: A microelectronic device comprises a stack structure, contact structures, and additional contact structures. The stack structure comprises a vertically alternating sequence of conductive material and insulative material arranged in tiers. The stack structure is divided into blocks each comprising a stadium structure including steps comprising horizontal ends of the tiers. The contact structures are within a horizontal area of the stadium structure and vertically extend through the stack structure. The additional contact structures are on at least some of the steps of the stadium structure and are coupled to the contact structures. Memory devices and electronic devices are also disclosed.

Abstract: A partition command is stored at free memory address location of the local memory corresponding to an index of an address array. The index is associated with an entry in the address array. A last entry in a linked list of entries from a tail register is obtained based on an allocation of the stored partition command to a partition command queue of a plurality of partition command queues. The tail register corresponds to the partition command queue of the plurality of partition command queues. Responsive to obtaining the last entry in the linked list, an entry to the linked list after the last entry is appended. The entry corresponds to the index of the address array associated with the stored partition command.

Abstract: A device is disclosed which includes, in one illustrative example, an integrated circuit die having an active surface and a molded body extending around a perimeter of the die, the molded body having lips that are positioned above a portion of the active surface of the die. Another illustrative example includes an integrated circuit die having an active surface, a molded body extending around a perimeter of the die and a CTE buffer material formed around at least a portion of the perimeter of the die adjacent the active surface of the die, wherein the CTE buffer material is positioned between a portion of the die and a portion of the molded body and wherein the CTE buffer material has a coefficient of thermal expansion that is intermediate a coefficient of thermal expansion for the die and a coefficient of thermal expansion for the molded body.

Abstract: Methods, systems, and devices related to built-in self-test (BIST) circuitry of a controller. The controller can be coupled to multiple memory devices. The BIST circuitry can include registers configured to store burst patterns. The BIST circuitry can perform a BIST operation on the memory devices contemporaneously and using the number of burst patterns.

Abstract: Methods, systems, and devices for read disturb management for memory are described. In some instances, data may be read from a first page of a virtual block of a memory system. If the data includes one or more errors, the memory system may read data from a second page of the virtual block and determine whether one or more errors exist in the data. The memory system may continue reading pages of the virtual block until a page includes no (or relatively few errors). The memory system may then refresh the pages.

Abstract: In various examples, refreshing a bank can include receiving a refresh command, wherein the refresh command comprises selector bits and receiving mode register bits from the mode registers. Refreshing a bank can also include refreshing a number of banks from the plurality of banks utilizing the mode register bits and the selector bits.

Abstract: Methods, systems, and devices for performance control for a memory sub-system are described. A memory sub-system can monitor a backend for writing data to a memory device. The memory sub-system can determine that the bandwidth of the backend satisfies one or more performance criteria that are based on performance between the memory sub-system and a host system. In some embodiments, the memory sub-system can allocate a quantity of slots of a buffer to a frontend of the memory sub-system based on determining that the bandwidth of the backend satisfies the one or more performance criteria. Slots of the buffer can be configured to receive data from the frontend for writing to the memory device by the backend.

Abstract: A memory sub-system can determine a block granularity for an input/output (I/O) data stream received from a host system. The memory sub-system can determine that the block granularity is different than a memory block granularity of a first memory region in a first namespace of the one or more memory devices, where the first memory region is to store the I/O data stream. The memory sub-system can accumulate blocks from the I/O data stream in a second memory region in a second namespace of the one or more memory devices. Responsive to a capacity of the accumulated blocks in the second memory region satisfying a threshold criterion, the memory sub-system can migrate the accumulated plurality of blocks from the second memory region to the first memory region.

Abstract: A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including causing a read operation to be initiated with respect to a set of target cells, obtaining cell state information for each respective group of adjacent cells, for each target cell of the set of target cells, determining a state information bin of a set of state information bins based on the cell state information for its respective group of adjacent cells, and assigning each target cell of the set of target cells to the respective state information bin. Each state information bin of the set of state information bins defines a respective boost voltage level offset to be applied to perform boost voltage modulation.

Abstract: Computer-readable media and methods for a geospatial image map are disclosed. A computer-readable medium has computer-readable instructions stored thereon. The computer-readable instructions are configured to instruct one or more processors to display a map of a selected geographic region on an electronic display. The map includes geographic sub-regions displayed within the map. The computer-readable instructions are configured to instruct the one or more processors to select discrete images corresponding to the geographic sub-regions, and display the discrete images at the same time on the electronic display as an overlay to the map. A method includes displaying a map of a selected geographic region, displaying geographic sub-regions of the selected geographic region, selecting discrete images corresponding to the geographic sub-regions and one or more selected categories, and displaying the discrete images simultaneously on the electronic display as an overlay to the map.

Abstract: An apparatus can include a number of memory devices and a controller coupled to one or more of the number of memory devices. The controller can be configured to determine whether a quantity of row activations directed to a row of the memory devices exceeds a row hammer criterion. The controller can be configured to select, responsive to determining that the row hammer criterion is met, a row hammer mitigation response from a plurality of row hammer mitigation responses available for initiation. The controller can be configured to initiate the selected row hammer mitigation response.

Abstract: A data bus coupled to a plurality of memory devices is determined to be in a read mode. Responsive to determining that the data bus is in the read mode, a particular read operation identified in a particular memory queue of memory queues that include identifiers of one or more write operations and identifiers of one or more read operations is determined. The particular memory queue includes a highest number of read operations for a memory device of the memory devices. The particular read operation is transmitted from the particular memory queue over the data bus.

Abstract: Methods, systems, and devices for activate commands for memory preparation are described. A memory device may receive an activate command for a row of a memory bank in the memory device. The activate command may include an indicator that indicates a type of an access operation associated with the activate command. The memory device may perform, based on the type of the access operation, an operation to prepare the memory device for the access operation. The memory device may then receive an access command for the access operation after performing the operation to prepare the memory device for the access operation.

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure over a substrate, the stack structure comprising tiers each independently comprising a sacrificial structure and an insulating structure and longitudinally adjacent the sacrificial structure. A masking structure is formed over a portion of the stack structure. A photoresist is formed over the masking structure and over additional portions of the stack structure not covered by the masking structure. The photoresist and the stack structure are subjected to a series of material removal processes to selectively remove portions of the photoresist and portions of the stack structure not covered by one or more of the masking structure and remaining portions of the photoresist to form a stair step structure. Semiconductor devices and additional methods of forming a semiconductor device structure are also described.