Abstract: A processing device access a command to program data to a page in a block of a memory device. The processing device determines whether the page is a last remaining open page in the block. The processing device accesses a list that indicates enablement of a function to apply read level offsets to one or more open blocks in the memory device. The processing device determines the list includes an entry that matches to the block. The entry indicates enablement of the function to apply read level offsets to the block. The processing device disables the function based on determining the page is a last remaining open page in the block. The processing device adds the command to a prioritized queue of commands. The memory device executes commands from the prioritized queue in an order based on a priority level assigned to each command.

Abstract: Memory devices having optical I/O interfaces are described herein. In one embodiment, a memory device includes a plurality of memories coupled to a substrate, each memory including one or more photon integrated circuit (PIC) chips for converting electrical signals to/from optical signals. The memory device can further include a plurality of optical fibers, wherein individual ones of the memories are optically coupled to at least one of the optical fibers. The memories can receive/transmit the optical signals over the optical fibers and can be electrically coupled to a power supply/ground via the substrate.

Abstract: Methods, systems, and devices for deep learning access and authentication in a computing architecture are described. A computing system a processor, a deep learning device, and a memory system. The deep learning device may be operable to perform operations associated with the processor using a neural network. The memory system enable or disable access to the deep learning device by the processor. For example, the memory system may verify whether the processor is authorized to access the deep learning device and enable or disable access based on the verification. If access is enabled, the deep learning device may perform the one or more operations associated with the processor. If access is disabled, the deep learning device may be restricted from performing the one or more operations associated with the processor.

Abstract: A semiconductor package can include a semiconductor die stack including a top die and one or more core dies below the top die. The semiconductor package can further include a metal heat sink plated on a top surface of the top die and have a plurality of side surfaces coplanar with corresponding ones of a plurality of sidewalls of the semiconductor die stack. A molding can surround the stack of semiconductor dies and the metal heat sink, the molding including a top surface coplanar with an exposed upper surface of the metal heat sink. The top surface of the molding and the exposed upper surface of the metal heat sink are both mechanically altered. For example, the metal heat sink and the molding can be simultaneously ground with a grinding disc and can show grinding marks as a result.

Abstract: Semiconductor devices including electrically-isolated extensions and associated systems and methods are disclosed herein. An electrically-isolated extension may be coupled to a corresponding connection pad that is attached to a surface of a device. The electrically-isolated extensions may extend at least partially through one or more layers at or near the surface and toward a substrate or an inner portion thereof.

Abstract: A processing device in a memory sub-system determines a syndrome weight for a sense word read from a memory device and determines whether the syndrome weight for the sense word satisfies a threshold criterion. Responsive to the syndrome weight for the sense word satisfying a respective threshold criterion associated with a next iteration of a first decoding operation, bypassing the first decoding operation and initiating a second decoding operation for the sense word, wherein the second decoding operation has a higher error correction capability than the first decoding operation.

Abstract: A sign bit of a low-density parity-check (LDPC) codeword associated with a translation unit (TU) can be generated by performing an XOR operation on a RAIN drop corresponding to the TU and a raw read of the TU. The LDPC codeword can include a hard bit and three soft bits that include the sign bit. The LDPC codeword can be decoded using the hard bit and the three soft bits. A read recovery operation can be performed on the TU using the decoded LDPC codeword.

Abstract: Systems, methods and apparatuses to provide memory as a service are described. For example, a borrower device is configured to: communicate with a lender device; borrow an amount of memory from the lender device; expand memory capacity of the borrower device for applications running on the borrower device, using at least the local memory of the borrower device and the amount of memory borrowed from the lender device; and service accesses by the applications to memory via communication link between the borrower device and the lender device.

Abstract: A request to write host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination of a first status associated with the host data is made. The redundancy metadata associated with the host data is updated to indicate at least the first status associated with the host data. A memory access operation is performed to write the host data and the updated redundancy metadata to the memory device.

Abstract: A memory device may include a memory array including a plurality of memory cells and a die stack including at least a portion of the plurality of memory cells. The memory device may also include multiple temperature sensors each designed to output a temperature code corresponding to the temperature of a respective die of the die stack. One die of the die stack is then designed to output the temperature code corresponding to the hottest die of the die stack.

Abstract: Methods, systems, and devices for sparse piers for three-dimensional memory arrays are described. A semiconductor device, such as a memory die, may include pier structures formed in contact with features formed from alternating layers of materials deposited over a substrate, which may provide mechanical support for subsequent processing. For example, a memory die may include alternating layers of a first material and a second material, which may be formed into various cross-sectional patterns. In some examples, the alternating layers may be formed into one or more pairs of interleaved comb structures. Pier structures may be formed in contact with the cross sectional patterns to provide mechanical support between instances of the cross-sectional patterns, or between layers of the cross-sectional patterns (e.g., when one or more layers are removed from the cross-sectional patterns), or both.

Abstract: Methods, systems, and devices for parallel access in a memory array are described. A set of memory cells of a memory device may be associated with an array of conductive structures, where such structures may be coupled using a set of transistors or other switching components that are activated by a first driver. The set of memory cells may be divided into two or more subsets of memory cells, where each subset may be associated with a respective second driver for driving access currents through memory cells of the subset. Two or more of such second drivers may operate concurrently, which may support distributing current or distributing associated circuit structures across a different footprint of the memory device than other different implementations with a single such second driver.

Abstract: The present disclosure provides techniques for using a multiple-port buffer to improve a transaction rate of a memory module. In an example, a memory module can include a circuit board having an external interface, first memory devices mounted to the circuit board, and a first multiple-port buffer circuit mounted to the circuit board. The first multiple-port buffer circuit can include a first port coupled to data lines of the external interface, the first port configured to operate at a first transaction rate, a second port coupled to data lines of a first plurality of the first memory devices, and a third port coupled to data lines of a second plurality of the first memory devices. The second and third ports can be configured to operate at a second transaction rate, wherein the second transaction rate is slower than the first transaction rate.

Abstract: Methods, systems, and devices for programmable metadata and related operations are described. A method may include receiving signaling that indicates a set of rules for transitions of states of metadata at a memory device storing the metadata. The memory device may receive a command from a host device associated with a set of data after receiving the set of rules. The memory device may transition metadata associated with the set of data stored at the memory device from a first state to a second state based in part on the set of rules and the command. The memory device may execute the command received from the host device.

Abstract: Methods, systems, and devices for managed memory systems with multiple priority queues are described. Memory access commands may be received from a host and stored in a command queue. First and second subsets of the commands, respectively associated with first and second priorities, may be determined. The first and second subsets may be routed from the command queue to first and second queues, respectively. The first and second subsets may be processed from the first and second queues to third and fourth queues, respectively, at a storage controller, according to first and second processes that may be run concurrently according to parameters for prioritization between the first and second priorities. Data associated with the commands may be received from the host, temporarily stored in a buffer, then moved to a storage memory (for write commands) or retrieved from the storage memory, temporarily stored in the buffer, then transmitted to the host (for read commands).

Abstract: Semiconductor lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The semiconductor lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

Abstract: A system includes a memory component and a processing device, operatively coupled with the memory component, to send a read command to the memory component while a program or erase operation being executed by the memory component is suspended. The processing device, operatively coupled with the memory component, can then send an auto resume command to the memory component to automatically resume execution of the program or erase operation after the read command is executed.

Abstract: Methods, systems, and devices for an elastic buffer for a media management operation are described. A plurality of entries associated with a media management operation for a memory sub-system are stored. A first set of one or more write commands associated with the media management operation are buffered using the plurality of entries based on a second set of one or more write commands associated with a host write procedure. The first set of one or more write commands associated with the media management operation are issued based on the plurality of entries and a completion of the second set of one or more write commands associated with the host write procedure.

Abstract: Methods, systems, and devices for thin film transistor random access memory are described. A memory device may include memory cells each having one or more transistors formed above a substrate. For example, a memory cell may include a transistor having a channel portion formed by one or more pillars or other structures formed above a substrate, and a gate portion including a conductor formed above the substrate and configured to activate the channel portion based at least in part on a voltage of the gate portion. A memory cell may include a set of two or more such transistors to support latching circuitry of the memory cell, or other circuitry configured to store a logic state, which may or may not be used in combination with one or more transistors formed at least in part from one or more portions of a substrate.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portions that collectively form part of a staircase structure. The staircase structure includes first regions and second regions coupled to the first regions. The second regions include respective sidewalls in which a portion of each of the first regions and a portion of each of the second regions are part of a respective control gate of the control gates. The device also includes conductive pads electrically separated from each other and located on the first regions of the staircase structure, and conductive contacts contacting the conductive pads.