Abstract: Some embodiments include ferroelectric assemblies. Some embodiments include a capacitor which has ferroelectric insulative material between a first electrode and a second electrode. The capacitor also has a metal oxide between the second electrode and the ferroelectric insulative material. The metal oxide has a thickness of less than or equal to about 30 ?. Some embodiments include a method of forming an assembly. A first capacitor electrode is formed over a semiconductor-containing base. Ferroelectric insulative material is formed over the first electrode. A metal-containing material is formed over the ferroelectric insulative material. The metal-containing material is oxidized to form a metal oxide from the metal-containing material. A second electrode is formed over the metal oxide.

Abstract: Systems may include a central processing unit (CPU), a graphics processing unit (GPU), or a field programmable gate array (FPGA), or any combination thereof. At least one memory device may be connected to the CPU, the GPU, or the FPGA. The memory device(s) may include a device substrate including a microelectronic device and bond pads coupled with an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on the package substrate. Each ball of the ball grid array positioned and configured to carry one of a high-bandwidth data signal or a high-frequency clock signal may be located only diagonally adjacent to any other balls of the ball grid array configured to carry another of a high-bandwidth data signal or a high-frequency clock signal.

Abstract: A memory device includes a memory array comprising a plurality of planes and a plurality of independent plane driver circuits. The memory device further includes control logic to receive a request for one of the plurality of independent plane driver circuits to execute a high current event on a corresponding one of the plurality of planes in the memory device. The control logic is further to increment a counter tracking a number of high current events occurring in the memory device, and determine whether the number of high current events occurring in the memory device satisfies a threshold criterion. Responsive to determining that the number of high current events occurring in the memory device satisfies the threshold criterion, the control logic is to cause execution of the high current event to be delayed.

Abstract: One or more data items is received by a processing device managing one or more memory devices partitioned into a plurality of die partitions. The one or more data items is determined to be written sequentially to one or more blocks within a die partition of the plurality of die partitions. Metadata associated with the one or more data items is written sequentially to one or more blocks across the plurality of die partitions.

Abstract: Methods, systems, and devices for rating-based mapping of data to memory are described. A memory system may determine a first rating for a set of data selected for writing to a memory system. The memory system may select a target page of a block in the memory system for writing the set of data based at least in part on a second rating for the target page. The memory system may write the set of data to the target page based at least in part on the first rating for the set of data corresponding to the second rating for the target page.

Abstract: Some embodiments include an assembly having a stack of alternating dielectric levels and conductive levels. Channel material pillars extend through the stack. Some of the channel material pillars are associated with a first sub-block, and others of the channel material pillars are associated with a second sub-block. Memory cells are along the channel material pillars. An insulative level is over the stack. A select gate configuration is over the insulative level. The select gate configuration includes a first conductive gate structure associated with the first sub-block, and includes a second conductive gate structure associated with the second sub-block. The first and second conductive gate structures are laterally spaced from one another by an intervening insulative region. The first and second conductive gate structures have vertically-spaced conductive regions, and have vertically-extending conductive structures which electrically couple the vertically-spaced conductive regions to one another.

Abstract: Some embodiments include a method of forming an integrated assembly. A structure is provided to have conductive lines, and to have rails over the conductive lines and extending in a direction which crosses the conductive lines. Each of the rails includes pillars of semiconductor material. The rails have sidewall surfaces along spaces between the rails. The pillars have upper segments, middle segments and lower segments. First-material liners are formed along the sidewall surfaces of the rails. A second material is formed over the liners. First sections of the liners are removed to form gaps between the second material and the sidewall surfaces of the rails. Second sections of the liners remain under the gaps. Conductive material is formed within the gaps. The conductive material is configured as conductive lines which are along the middle segments of the pillars.

Abstract: A method used in forming a vertical string of memory cells and a conductive via comprises forming a first lower opening and a second lower opening into a lower material. A first material is formed within the first and second lower openings. An upper material is formed above the lower material and above the first material in the first and second lower openings. A first upper opening is formed through the upper material to the first material in the first lower opening. At least a majority of the first material is removed from the first lower opening through the first upper opening and channel material is formed within the first lower and first upper openings for the vertical string of memory cells being formed. After forming the channel material, a second upper opening is formed through the upper material to the first material in the second lower opening. Conductive material of the conductive via is formed within the second upper opening. Structure embodiments independent of method of formation are disclosed.

Abstract: An apparatus includes an active region; a scribe region surrounding the active region; a test component in the scribe region; a pad electrode in the active region; and a power supply wiring of an upper wiring layer in the active region, the power supply wiring extending between the test component and the pad electrode; and an interconnection structure coupling the test component and the pad electrode across a border between the active region and the scribe region, the interconnection structure including a wiring portion of a lower wiring layer crossing the power supply wiring.

Abstract: Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells, with the memory cells individually comprising a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. At least a portion of the channel region is horizontally-oriented for horizontal current flow in the portion between the first and second source/drain regions. A capacitor of the memory cell comprises first and second electrodes having a capacitor insulator there-between. The first electrode is electrically coupled to the first source/drain region. A horizontal longitudinally-elongated sense line is in individual of the memory-cell tiers. Individual of the second source/drain regions of individual of the transistors that are in the same memory-cell tier are electrically coupled to the horizontal longitudinally-elongated sense line in that individual tier of memory cells.

Abstract: Methods, apparatuses, and systems for tensor memory access are described. Multiple data located in different physical addresses of memory may be concurrently read or written by, for example, employing various processing patterns of tensor or matrix related computations. A memory controller, which may comprise a data address generator, may be configured to generate a sequence of memory addresses for a memory access operation based on a starting address and a dimension of a tensor or matrix. At least one dimension of a tensor or matrix may correspond to a row, a column, a diagonal, a determinant, or an Nth dimension of the tensor or matrix. The memory controller may also comprise a buffer configured to read and write the data generated from or according to a sequence of memory of addresses.

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

Abstract: Methods, systems, and devices related to built-in self-test burst patterns based on architecture of memory. A controller can be coupled to a memory device. The controller can include built-in self-test (BIST) circuitry. The BIST circuitry can include registers configured to store respective write burst patterns and read burst patterns based on an architecture of the memory device.

Abstract: Disclosed herein are methods, apparatuses and systems related to adjusting operation of memory dies according to reliability measures determined in real-time. The apparatus may be configured to determine the reliability measures based on (1) initiating and completing a programming operation within respective timings following an erase operation and (2) reading the programmed data within a window from completing the programming operation.

Abstract: A memory sub-system to initiate an erase operation to erase a first set of memory cells of a first memory block and a second set of memory cells of a second memory block of a memory device. One or more erase pulses of the erase operation are caused to be applied to the first set of memory cells of the first memory block and the second set of memory cells of the second memory block concurrently. A first erase verify sub-operation of the erase operation is caused to be performed to verify the first memory block is erased and a second erase verify sub-operation of the erase operation is caused to be performed to verify the second memory block is erased.

Abstract: Disclosed in some examples, are methods, systems, devices, and machine-readable mediums which provide for more efficient CGRA execution by assigning different initiation intervals to different PEs executing a same code base. The initiation intervals may be a multiple of each other and the PE with the lowest initiation interval may be used to execute instructions of the code that is to be executed at a greater frequency than other instructions than other instructions that may be assigned to PEs with higher initiation intervals.

Abstract: Methods, systems, and devices for data recovery using ordered data requests are described. In some examples, a memory system receives data units from a host device. A first controller of the memory system generates a protocol unit using the data units. A second controller of the memory system generates a data storage unit using data from the protocol unit, and stores the data unit to a memory device. The memory system performs error detection operations using respective sets of parity bits for each of the units. Upon detecting an error, the memory system, for a write operation, re-requests data associated with error and regenerate the units to correct for the error, or, for a read operation, re-read data associated with the error and regenerate the units to correct for the error.

Abstract: Apparatuses, systems, and methods for module level error correction. Multiple memory devices a packaged together in a memory module. The module includes a module error correction code (ECC) circuit which pools information multiple memory devices on the module. In an example read operation, multiple memory devices each provide a codeword which includes data bits and parity bits. The codewords may include data bits provided along a data bus and parity bits provided along a parity bus. The ECC circuit pools the codewords and detects errors in the pooled codewords.

Abstract: A system includes a memory device and a processing device to initialize a block family associated with the memory device and a timer at initialization of the block family. The processing device further stores, in non-volatile memory of the memory device, a value of the timer before powering down the system while the block family is still open. The processing device further detects a power on of the system and measures a data state metric associated with one or more memory cell of a page of the memory device that is associated with the block family. The processing device further compares a level of the data state metric to a temporal voltage shift function to estimate a time after program value of the page and increments the value of the timer, restored from the non-volatile memory, based on the time after program value.