Abstract: A system includes a memory device containing multiple dies that each have multiple pages, and a processing device, operatively coupled with the memory device, to perform various operations including scanning a group of pages residing on a die and determining a value of one data state metric and a corresponding value of another state metric. The operations can also include recording a set of values of the first metric and a corresponding set of values of the second metric, as well as calculating the value of the second metric corresponding to a predetermined value of the first metric associated with a failure condition of the die. Additionally, the operations can include identifying a particular criterion that is satisfied by the calculated value, assigning, to the die, a rating corresponding to the identified criterion, and performing scans on the die at a frequency determined by the assigned rating.

Abstract: The present disclosure relates to a memory device comprising an array of memory cells and an operating circuit for managing the operation of the array, the operating circuit comprising an encoding unit configured to generate a codeword, the codeword comprising payload data stored in a plurality of memory cells of the array, parity data associated with the payload data stored in parity cells of the memory array, wherein a number of parity cells to be used to store the parity data is selectable based on a status of the plurality of memory cells and is related to a selected Error Correction Code (ECC) protection level, and extra payload data stored in unused parity cells, the device further comprising a decoding unit configured to perform an ECC operation on the stored codeword based on the selected ECC protection level.

Abstract: Apparatuses, methods, and systems for performing sense operations in memory are disclosed. The memory can have a group of memory cells, and circuitry can be configured to perform a sense operation on the group, wherein performing the sense operation includes performing a first sense operation in a first polarity on the group of memory cells to determine a quantity of the memory cells of the group that are in a particular data state, and performing a second sense operation in a second polarity on the group of memory cells to determine a data state of the memory cells of the group. The second polarity is opposite the first polarity, and the second sense operation is a count-based sense operation that uses the determined quantity of memory cells in the particular data state as a counting threshold to determine the data state of the memory cells of the group.

Abstract: Systems, devices, and methods related to a Deep Learning Accelerator and memory are described. For example, a microphone may be configured to execute instructions with matrix operands and configured with: a transducer to convert sound waves to electrical signals; an analog to digital converter to generate audio data according to the electrical signals; random access memory to store instructions executable by the Deep Learning Accelerator and store matrices of an Artificial Neural Network; and a controller to store the audio data in the random access memory as an input to the Artificial Neural Network. The Deep Learning Accelerator can execute the instructions to generate an output of the Artificial Neural Network, which may be provided as the primary output of the microphone to a computer system, such as a voice-based digital assistant.

Abstract: A vehicle can have a user profile securely deployed in it according to a security protocol. The vehicle can include a body, a powertrain, vehicle electronics, and a computing system. The computing system of the vehicle can be configured to: retrieve information from a user profile according to a security protocol. The computing system of the vehicle can also be configured to receive a request for at least a part of the retrieved information from the vehicle electronics and send a portion of the retrieved information to the vehicle electronics according to the request. The computing system of the vehicle can also be configured to propagate information sent from the vehicle electronics back into the user profile according to the security protocol. And, the computing system of the vehicle can also be configured to store in its memory, according to the security protocol, information sent from the vehicle electronics.

Abstract: Apparatuses and techniques for handling faulty usage-based-disturbance data are described. In an example aspect, a memory device uses a report flag to indicate that an address of a row that corresponds to the faulty usage-based-disturbance data is logged at a global-bank level and is accessible by a host device. The report flag also enables the memory device to avoid reporting another error until the host device has cleared information associated with a previously-reported error. In another example aspect, the memory device temporarily prevents usage-based-disturbance mitigation from being performed based on the faulty usage-based-disturbance data. This means that if the faulty usage-based-disturbance data would otherwise trigger refreshing of one or more rows that are proximate to the row corresponding to the faulty usage-based-disturbance data, the memory device does not perform these refresh operations.

Abstract: Apparatuses and techniques for logging a memory address associated with faulty usage-based disturbance data are described. In an example aspect, a memory device can detect, at a local-bank level, a fault associated with usage-based disturbance data. This detection enables the memory device to log a row address associated with the faulty usage-based disturbance data. To avoid increasing a complexity and/or a size of the memory device, some implementations of the memory device can perform the address logging at the multi-bank level with the assistance of an engine, such as a test engine. The memory device stores the logged address in at least one mode register to communicate the fault to a memory controller. With the logged address, the memory controller can initiate a repair procedure to fix the faulty usage-based disturbance data.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for row hammer counter resets. Repeated access to an aggressor word line may cause increased data degradation in nearby victim word lines of the memory. The access count value of a given word line may be stored in counter memory cells positioned along that word line. The count values may be randomly or pseudo-randomly initialized. In some examples, a memory device may utilize residual charges that are present on the counter cells during start-up to initialize the counter memory cells. In some other examples, a memory device may utilize threshold voltage compensation (VtC) settings at start-up to initialize the counter memory cells. In some other examples, a memory device may utilize a combination of the residual charges that are present on the counter cells and VtC settings on start-up to initialize the counter memory cells.

Abstract: Methods, systems, and devices for bit retiring to mitigate bit errors are described. A memory device may retrieve a set of bits from a first row of an address space and may determine that the set of bits includes one or more errors. The memory device may remap at least a portion of the first row from a first row index to a second row index, where the second row index, before the remapping, corresponds to a second row within the address space addressable by the host device. Additionally or alternatively, the memory device may receive a first command to access a first logical address of a memory array that is associated with a first row index. The memory device may determine that the first row includes one or more errors and may transmit a signal indicating that the first row includes the one or more errors.

Abstract: Methods, systems, and devices for redundant computing across planes are described. A device may perform a computational operation on first data that is stored in a first plane that includes content-addressable memory cells. The first data may be representative of a set of contiguous bits of a vector. The device may perform, concurrent with performing the computational operation on the first data, the computational operation on second data that is stored in a second plane. The second data may be representative of the set of contiguous bits of the vector. The device may read from the first plane and write to the second plane, third data representative of a result of the computational operation on the first data.

Abstract: Devices and techniques are disclosed herein for implementing, in addition to a first cache, a second, persistent cache in a memory system coupled to a host. The memory system can include flash memory. In certain examples, the first cache and the second cache are configured to store mapping information. In some examples, the mapping information of the second persistent cache is determined by the host using a persistence flag of memory requests provided to the memory system.

Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.

Abstract: Devices and techniques for thread replay to preserve state in a barrel processor are described herein. An apparatus includes a barrel processor, which includes a temporary memory; and a thread scheduling circuitry; wherein the barrel processor is configured to perform operations through use of the thread scheduling circuitry, the operations including those to: schedule a current thread to place into a pipeline for the barrel processor on a clock cycle, the barrel processor to schedule threads on each clock cycle; store the current thread in the temporary memory; detect that no thread is available on a clock cycle subsequent to the cycle that the current thread is scheduled; and in response to detecting that no thread is available on the subsequent clock cycle, repeat scheduling the current thread based on the contents of the temporary memory.

Abstract: Methods, systems, and devices for a cross-point pillar architecture for memory arrays are described. Multiple selector devices may be configured to access or activate a pillar within a memory array, where the selector devices may each be or include a chalcogenide material. A pillar access line may be coupled with multiple selector devices, where each selector device may correspond to a pillar associated with the pillar access line. Pillar access lines on top and bottom of the pillars of the memory array may be aligned in a square or rectangle formation, or in a hexagonal formation. Pillars and corresponding selector devices on top and bottom of the pillars may be located at overlapping portions of the pillar access lines, thereby forming a cross point architecture for pillar selection or activation. The selector devices may act in pairs to select or activate a pillar upon application of a respective selection voltage.

Abstract: A method includes receiving, by a computing device, a message from a host device. In response to receiving the message, the computing device generates an identifier, a certificate, and a key. The identifier is associated with an identity of the computing device, and the certificate is generated using the message. The computing device sends the identifier, the certificate, and the key to the host device. The host device verifies the identity of the computing device using the identifier, the certificate, and the key.

Abstract: Described are systems and methods for prioritization of background media management operations in memory systems. An example system comprises a controller coupled to a memory array comprising a plurality of memory cells. The controller is configured to perform operations, comprising: identifying a plurality of address ranges referencing respective sets of memory cells of the memory array, wherein each address range is associated with a respective memory access operation counter reflecting a number of memory access operations that have been performed with respect to a corresponding set of memory cells; identifying, among the plurality of address ranges, an address range associated with a maximum value of a corresponding memory access operation counter; and causing a media management operation to be performed with respect to a set of memory cells referenced by the identified address range.

Abstract: Methods, systems, and devices for techniques for controlling command order are described. An entity of a host system, such as a file system, may insert a sequential identifier into commands generated by the entity to indicate an order of the commands. In some examples, the host system may specify a set of commands in a first sequence to be transmitted to the memory system. The host system may subsequently reorder the set of commands in to a second sequence and transmit the set of commands to the memory system. In some cases, following a power-on condition, the memory system may determine a latest valid command of the set of commands. The memory system may subsequently invalidate one or more logical addresses associated with commands having sequence identifiers after the sequence identifier of the latest valid command.

Abstract: Systems, apparatuses, and methods related to a memory controller for cache bypass are described. An example memory controller can be coupled to a memory device. The example memory controller can include a cache including a cache sequence controller configured to determine a quantity of a given type of result of cache look-up operations, determine the quantity satisfies a bypass threshold, and cause performance of a bypass memory operation that bypasses the cache and accesses the memory device.

Abstract: A memory device includes a memory array and control logic, operatively coupled with the memory array. The control logic allocates power to one or more prioritized processing threads, of a plurality of processing threads that access the memory array, based on a value of a priority ring counter. The control logic starts a timer in response to detecting allocation of the power to a non-prioritized processing thread of the plurality of processing threads. While the timer is running, the control logic increments the priority ring counter before each power management cycle and prioritizes allocation of the power to the one or more prioritized processing threads located within a subset of the plurality of processing threads corresponding to a value of the priority ring counter.

Abstract: Apparatuses, systems, and methods for input buffer data feedback equalization (DFE). An input buffer includes a DFE circuit which adjusts a threshold voltage of the input buffer based on a previously latched data bit. The DFE circuit includes a number of DFE legs coupled in parallel to a node of the input buffer. Each DFE leg is selectively activated by a DFE code. Each DFE leg includes a capacitance (e.g., a field effect transistor) which is coupled to the node in an active leg based on the previously latched data bit. The previously latched data bit may also be used to generate a reset signal which couples the capacitors to ground. Each DFE leg may also include a transistor coupled to a bias voltage, which is stable across a range of PVT variations.