Abstract: The present disclosure is related to a system and method for adjusting the illumination intensity of an imaging device. The system includes an imaging camera including a light box. The outer surface of the light box includes a first set of magnets. The imaging camera includes a light guide configured to provide light to the light box. A focus assembly including a focus lens is disposed at an end of the light guide. An adjustable collar may be disposed around the focus assembly. The collar includes a second set of magnets disposed on a rear face of the main body. One or more set screws are disposed on the main body of the collar. The collar is configured to move along the length of the focus assembly and can be secured to a position on the focus assembly via the set screws.

Abstract: Memory devices receive refresh management (RFM) commands and perform a targeted refresh operation responsive to the RFM command. Certain conflicts may occur if the RFM command is received while the memory is performing certain operations. An RFM entry circuit receives the RFM command at a first time and then provides an internal RFM signal at a second time. The second time may be the next time a row activation or refresh is performed after receiving the RFM command. The targeted refresh operation is performed responsive to the internal RFM signal.

Abstract: Apparatuses, computer implemented methods and non-transitory computer-readable media storing instructions to implement simulating topological features of layout designs are disclosed. An example method includes: receiving information about the layout design including topological parameters in a verification area; defining a width and a length in first and second direction directions of one or more windows; defining first and second step sizes independently from the width and the length in the first and second directions for the one or more windows, the first step size being a distance between adjacent central points of the one or more windows in the first direction and the second step size being a distance between adjacent central points of the one or more windows in the second direction; extracting information about the layout design in the one or more windows at each of a plurality of window locations; and storing the information in a database.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers above a conductor tier. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The channel-material strings directly electrically couple to conductor material of the conductor tier. The insulative tier immediately-above a lowest of the conductive tiers comprises a lower first insulating material and an upper second insulating material above the upper first insulating material. The upper second insulating material is of different composition from that of the lower first insulating material. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. Other embodiments, including method, are disclosed.

Abstract: Some embodiments include an integrated assembly having a pillar of semiconductor material. The pillar has a base region, and bifurcates into two segments which extend upwardly from the base region. The two segments are horizontally spaced from one another by an intervening region. A conductive gate is within the intervening region. A first source/drain region is within the base region, a second source/drain region is within the segments, and a channel region is within the segments. The channel region is adjacent to the conductive gate and is vertically disposed between the first and second source/drain regions. Some embodiments include methods of forming integrated assemblies.

Abstract: Methods, systems, and devices for commanded device states for a memory system are described. For example, a memory system may be configured with different device states that are each associated with a respective allocation of resources (e.g., feature sets) for operations of the memory system. Resource allocations corresponding to the different device states may be associated with different combinations of memory management configurations, error control configurations, trim parameters, degrees of parallelism, or endurance configurations, among other parameters of the memory system, which may support different tradeoffs between performance characteristics of the memory system. A host system may be configured to evaluate various parameters of operating the host system, and to transmit commands for a memory system to enter a desired device state of the memory system.

Abstract: A system including sensors of an advanced driver assistance system and a data recorder. The data recorder has: a volatile memory; a non-volatile memory configured with a file system region and a buffer region; and a processor configured to implement a file system mounted in the file system region. The data recorder records outputs from the sensors via the volatile memory into the buffer region in a cyclic way and, in response to an event, retrieve sensor data from the buffer region and store the sensor data into files organized under the file system mounted in the file system region.

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. An additional microelectronic device structure comprising control logic devices is formed. The microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. The base structure and portions of the cell pillar structures vertically extending into the base structure are removed to expose the doped semiconductive material. The doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures.

Abstract: Control logic in a memory device identifies a set of a plurality of memory cells configured as multi-level cell (MLC) memory to be programmed during a program operation and causes, at a first time during a program operation, a first programming pulse to be applied to a memory cell of the memory array to be programmed to a first programming level. The control logic further performs a program verify operation corresponding to the first programming level and compares a threshold voltage of the memory cell to one or more program verify voltage levels of the program verify operation to determine whether a condition is satisfied. The control logic further executes a level shifting operation in response to the condition to be satisfied.

Abstract: Arrays of memory cells including an isolation region between first and second access lines, a first memory cell having a control gate in contact with the first access line and a charge storage node having a curved cross-section having a first end in contact with a first portion of the isolation region on a first side of the isolation region and a second end in contact with a second portion of the isolation region on the isolation region's first side, and a second memory cell having a control gate in contact with the second access line and a charge storage node having a curved cross-section having a first end in contact with the first portion of the isolation region on a second side of the isolation region and a second end in contact with the second portion of the isolation region on the isolation region's first side.

Abstract: Methods, apparatuses and systems related to protecting an apparatus against unauthorized accesses or usages are described. The apparatus may include a data protection circuit that protects an operating state of the apparatus, data stored in the apparatus, or a combination thereof when a temperature of the apparatus is outside of an operating range thereof.

Abstract: Systems and methods of memory operation that provide a hardware-based reset of an unresponsive memory device are disclosed. In one embodiment, an exemplary system may comprise a semiconductor memory device having a memory array, a controller that may include a firmware component for controlling memory operations, and a reset circuit including power-up circuitry and timeout circuitry. The reset circuit may be configured to detect when the memory device is in a non-responsive state and reset the memory device without using any internal controller components potentially impacted/affected by the non-responsive state.

Abstract: Devices and methods include transmitting loopback signals for monitoring operation of a memory device. In some embodiments, a memory device may receive a system clock signal from a host device and may generate an internal clock signal based at least in part on the system clock signal. In some embodiments, the memory device may generate a loopback signal based at least in part on the internal clock signal and may transmit the loopback signal via a loopback datapath associated with the memory device. A host device may compare the internal clock signal and the system clock signal to determine a fidelity of the internal clock signal. Termination values of the memory device may be adjusted based on the determined fidelity of the internal clock signal.

Abstract: Methods, systems, and devices for techniques for priority information are described. A memory system may be configured to receive, at a memory system, an indication that data is critical to operating the memory system; receive the data that is critical to operating the memory system based at least in part on the indication; select one more parameters to provide a reliability of a storage of the data into a memory device of the memory system based at least in part on receiving the indication and receiving the data; and program the data into the memory device of the memory system using the one or more parameters based at least in part on selecting the one or more parameters.

Abstract: A method of forming a microelectronic device comprises forming a microelectronic device structure comprising memory cells, digit lines, word lines, and at least one isolation material covering and surrounding the memory cells, the digit lines, and the word lines. An additional microelectronic device structure comprising control logic devices and at least one additional isolation material covering and surrounding the control logic devices is formed. The additional microelectronic device structure is attached to the microelectronic device structure. Contact structures are formed to extend through the at least one isolation material and the at least one additional isolation material. Some of the contact structures are coupled to some of the digit lines and some of the control logic devices. Some other of the contact structures are coupled to some of the word lines and some other of the control logic devices. Microelectronic devices, electronic systems, and additional methods are also described.

Abstract: Apparatuses and methods can be related to implementing bypass paths in an ANN. The bypass path can be used to bypass a portion of the ANN such that the ANN generates an output with a particular level of confidence while utilizing less resources than if the portion of the ANN had not been bypassed.

Abstract: Embodiments of the present disclosure include apparatuses and method for a stacked light emitting diode (LED) hologram display. A stacked LED hologram display can include a first array of LEDs that are configured to emit red light received by a meta-optics panel configured to display a first portion of a holographic image, a second array of LEDs that are configured to emit green light received by a meta-optics panel configured to display a second portion of a holographic image, and a third array of LEDs that are configured to emit blue light received by a meta-optics panel configured to display a third portion of a holographic image. The stacked LED hologram display can include a number of actuators configured to adjust a position of a first array of LEDs in first direction and a second direction, adjust a position of a second array of LEDs in the first direction and the second direction, and adjust a position of a third array of LEDs in the first direction and the second direction.

Abstract: Methods, systems, and devices for shared decoder architecture for three-dimensional memory arrays are described. A memory device may include pillars coupled to an access line using two transistors positioned between the pillar and the access line. The gates of the two transistors may be coupled with respective gate lines coupled with circuitry configured to bias the gate line as part of an access operation for a memory cell coupled with the pillar. In some cases, the circuitry may be positioned between tiles of the memory device, at an end of one or more tiles of the memory device, between word line combs of a tile of the memory device, or a combination thereof.

Abstract: As described herein, an apparatus may include a memory that includes a first portion, a second portion, and a third portion. The apparatus may also include a memory controller that includes a first logical-to-physical table stored in a buffer memory. The memory controller may determine that the first portion is accessed sequential to the second portion and may adjust the first logical-to-physical table to cause a memory transaction performed by the memory controller to access the third portion as opposed to the first portion.

Abstract: A method of forming an electronic device comprising forming an initial dielectric material comprising silicon-hydrogen bonds. A deuterium source gas and an oxygen source gas are reacted to produce deuterium species, and the initial dielectric material is exposed to the deuterium species. Deuterium of the deuterium species is incorporated into the initial dielectric material to form a deuterium-containing dielectric material. Additional methods are also disclosed, as are electronic devices and systems comprising the deuterium-containing dielectric material.