Abstract: This document describes apparatuses and techniques for an efficient command protocol for memory access. In various aspects, a memory controller may implement combined operations of different command types (e.g., an activation command plus a read, an activation command plus a write, or an activation command plus a pre-charge command) to better utilize a multiple clock ratio of a command bus (e.g., a (1.5+0.5) N operation in a dual clocking WCK2CK ratio of 4:1), which may improve utilization of a data bus for associated memory responses. By so doing, the efficient command protocol may improve power efficiency and system level performance of a computing system.

Abstract: Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. Vertically-extending monolithic channel material is adjacent the select device gate material and the conductive levels. The monolithic channel material contains a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels. A first vertically-extending region is between the lower segment of the monolithic channel material and the select device gate material. The first vertically-extending region contains a first material. A second vertically-extending region is between the upper segment of the monolithic channel material and the conductive levels. The second vertically-extending region contains a material which is different in composition from the first material.

Abstract: Described apparatuses and methods relate to a write request buffer for a memory system that may support a nondeterministic protocol. A host device and connected memory device may include a controller with a read queue and a write queue. A controller includes a write request buffer to buffer write addresses and write data associated with write requests directed to the memory device. The write request buffer can include a write address buffer that stores unique write addresses and a write data buffer that stores most-recent write data associated with the unique write addresses. Incoming read requests are compared with the write requests stored in the write request buffer. If a match is found, the write request buffer can service the requested data without forwarding the read request downstream to backend memory. Accordingly, the write request buffer can improve the latency and bandwidth in accessing a memory device over an interconnect.

Abstract: A system, method and apparatus to control memory devices over computer networks. For example, a server system establishes a secure authenticated connection with a client computer system. Over the connection, the server receives from the client computer system a request identifying a memory device and determine, based on data stored in the server system, that the client computer system is eligible to control the memory device. In response to a request from the client computer system, the server system generates a digital signature for a command using at least a cryptographic key stored in the server system in association with the memory device. The client computer system receives the digital signature from the server system and submits the command with the digital signature to the memory device. The memory device validates the digital signature prior to execution of the command.

Abstract: A first artificial neural network (ANN) model implemented on a memory device can be executed on first data from an imaging device corresponding to a first image. A second ANN model implemented on the memory device can be executed on second data from the imaging device corresponding to a second, subsequent image. Whether an accuracy value of results yielded from the execution of the second ANN model on the second data is less than a threshold accuracy value can be determined by the memory device. Responsive to determining that the accuracy value is less than the threshold accuracy value, the first ANN model can be executed on third data from the imaging device corresponding to a third image subsequent to the second image. Such selection of ANN models can reduce excess power consumption of a memory device on which the ANN models are implemented.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell including a first transistor, a second transistor, and a dielectric structure formed in a trench. The first transistor includes a first channel region, and a charge storage structure separated from the first channel region. The second transistor includes a second channel region formed over the charge storage structure. The dielectric structure includes a first dielectric portion formed on a first sidewall of the trench, and a second dielectric portion formed on a second sidewall of the trench. The charge storage structure is between and adjacent the first and second dielectric portions.

Abstract: Methods, systems, and devices for memory operations are described. First scrambling sequences may be generated for first addresses of a memory device after an occurrence of a first event, where the first addresses may be associated with commands received at the memory device. Portions of the memory array corresponding to the first address may be accessed based on the first scrambling sequences. After an occurrence of a subsequent event, second scrambling sequences may be generated for the first addresses, where the second scrambling sequences may be different than the first set of scrambling sequences. After the occurrence of the subsequent event, the portions of the memory array may be accessed based on the second scrambling sequences.

Abstract: A microelectronic device includes a stack structure, a staircase structure, composite pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulative structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulative structures. The staircase structure has steps including edges of at least some of the tiers of the stack structure. The composite pad structures are on the steps of the staircase structure. Each of the composite pad structures includes a lower pad structure, and an upper pad structure overlying the lower pad structure and having a different material composition than the lower pad structure. The conductive contact structures extend through the composite pad structures and to the conductive structures of the stack structure. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Abstract: Methods and non-transitory machine-readable media associated with treatment plan identification are described. Treatment plan identification can include receiving first signaling configured to monitor user health data and receiving second signaling configured to monitor user behavior data. Treatment plan identification can include writing data that is based at least in part on a combination of the first signaling and the second signaling and identifying output data representative of a treatment plan for the user based at least in part on input data representative of the written data and additional user data. Output data representative of the treatment plan can be transmitted to a computing device accessible by the user, a computing device accessible by a provider, or both.

Abstract: Methods, systems, and devices for on-die formation of single-crystal semiconductor structures are described. In some examples, a layer of semiconductor material may be deposited above one or more decks of memory cells and divided into a set of patches. A respective crystalline arrangement of each patch may be formed based on nearly or partially melting the semiconductor material, such that nucleation sites remain in the semiconductor material, from which respective crystalline arrangements may grow. Channel portions of transistors may be formed at least in part by doping regions of the crystalline arrangements of the semiconductor material. Accordingly, operation of the memory cells may be supported by lower circuitry (e.g., formed at least in part by doped portions of a crystalline semiconductor substrate), and upper circuitry (e.g., formed at least in part by doped portions of a semiconductor deposited over the memory cells and formed with a crystalline arrangement in-situ).

Abstract: A memory device includes sets of memory dies. Each set of memory dies includes a memory dies associated with a respective channel of a plurality of channels, and each channel of the plurality of channels has a respective ready busy (RB) signal. The memory device further includes an input/output (I/O) expander to perform operations including receiving at least one command to perform clock synchronization associated with a clock signal with respect to the plurality of sets of memory dies, and in response to receiving the command, causing circuitry of the I/O expander to be configured to create an RB signal short with respect to a particular combination of channels. The clock synchronization is associated with peak power management (PPM) initialization.

Abstract: The disclosed embodiments relate to securing operations accessing a non-volatile storage area of a memory device. In one embodiment, a method is disclosed comprising generating, by firmware of a memory device, a cryptographic key using a value of a physically unclonable function (PUF); writing, by the firmware, the cryptographic key to a volatile storage area; receiving, by the firmware, a command accessing a non-volatile storage area from a host processor; and processing, by the firmware, the command using the cryptographic key.

Abstract: An apparatus for handling microelectronic devices comprises a pick arm having a pick surface configured for receiving a microelectronic device thereon, drives for moving the pick arm and reorienting the pick surface in the X, Y and Z planes and about a horizontal rotational axis and a vertical rotational axis, and a sensor device carried by the pick arm and configured to detect at least one of at least one magnitude of force and at least one location of force applied between the pick surface and a structure contacted by the pick surface or a structure and a microelectronic device carried on the pick surface.

Abstract: Control logic in a memory device causes a programming pulse of a set of programming pulses to be applied to a wordline associated with a memory cell of a memory device, where the memory cell is to be programmed to a target voltage level representing a first programming level. At a first time, first data is caused to be stored in a cache, the first data indicating that a threshold voltage of a memory cell exceeds the target voltage level. At a second time, the cache is caused to be refreshed to store second data indicating that the threshold voltage of the memory cell is less than the target voltage level. In view of the second data, a level shifting operation associated with the memory cell is caused to be executed.

Abstract: Bond pads for semiconductor die assemblies, and associated methods and systems are disclosed. In one embodiment, a semiconductor die assembly includes a first semiconductor die including a first bond pad on a first side of the first semiconductor die. The semiconductor die assembly further includes a second semiconductor die including a second bond pad on a second side of the second semiconductor die. The first bond pad is aligned and bonded to the second bond pad at a bonding interface between the first and second bond pads, and at least one of the first and second bond pads include a first metal and a second metal different than the first metal. Further, the first metal is located at the bonding interface and the second metal has a first thickness corresponding to at least one-fourth of a second thickness of the first or second bond pad.

Abstract: A memory device standby procedure can include idling a first memory device in a low-power standby mode, the first memory device coupled to a memory interface that couples multiple memory devices to a host and includes a command line (CA) and a standby exit line (EX), and the first memory device can include a primary die coupled to multiple secondary dies using an intra-package bus. At the first memory device, the procedure can include waking receiver circuitry on the primary die in response to a state change on the standby exit line, and sampling the command line using logic circuitry on the primary die. When a wakeup message on the command line comprises a chip identification that corresponds to the first memory device, the procedure can include initiating a standby exit procedure for the first memory device.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: Implementations described herein relate to a memory device with a fast write mode to mitigate power loss. In some implementations, the memory device may detect a condition associated with power supplied to the memory device. The memory device may detect one or more pending write operations to be performed to cause data to be written to memory cells of the memory device. The memory device may switch from a first voltage pattern, previously used by the memory device to write data to one or more memory cells of the memory device, to a second voltage pattern based on detecting the condition and based on detecting the one or more pending write operations. The memory device may perform at least one write operation, of the one or more pending write operations, using the second voltage pattern.

Abstract: A semiconductor device assembly is provided. The semiconductor device assembly includes a package substrate and a silicon spacer disposed on an upper surface of the substrate, the silicon spacer having a plurality of trenches extending into the silicon spacer from a top surface thereof. The semiconductor device assembly further includes one or more semiconductor devices disposed over the silicon spacer. Moreover, the semiconductor device assembly includes an encapsulant material at least partially encapsulating the one or more semiconductor devices and the package substrate, the encapsulant material at least partially filling the plurality of trenches of the silicon spacer.