Abstract: Apparatuses and methods including folded digit lines are disclosed. An example apparatus includes a first digit line portion extending in a first direction, a second digit line portion extending in the first direction, and a third digit line portion between the first and second digit line portions and extending in the first direction. A folded portion is coupled to the first and second digit line portions, and extends in a second direction and traverses the third digit line portion.

Abstract: Layouts of data pads and dummy data pads are disclosed. A die may include a number of circuits, a first edge, a second edge perpendicular to the first edge, a third edge opposite the first edge, and a fourth edge. The die may further include a first number of data pads variously electrically coupled to the number of circuits and arranged proximate to the first edge and a first number of dummy data pads, not electrically coupled to the number of circuits, alternatingly arranged with the first number of data pads, and proximate to the first edge. The die may further include a second number of data pads arranged proximate to the third edge and a second number of dummy data pads, alternatingly arranged with the second number of data pads, and proximate to the third edge. Associated devices, systems, and methods are also disclosed.

Abstract: Embodiments of the disclosure provide an apparatus comprising: a plurality of TSVs; a plurality of core dies stacked with one another; and an output control circuit. Each core die includes a data output circuit coupled to one or more TSVs to output read data. The data output circuit includes a data splitter to provide first and second complementary read data in parallel based on the read data, an output data latch to latch the first and second read data, and an output data buffer to receive the first and second read data from the output data latch and drive the TSVs based on the first and second read data. The output control circuit provides a first reset signal to the output data buffer and a second reset signal to the data splitter or the output data buffer to disable the output of the read data to the TSVs.

Abstract: A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. The channel region is crystalline and comprises a plurality of vertically-elongated crystal grains that individually are directly against both of the top source/drain region and the bottom source/drain region. Other embodiments, including methods, are disclosed.

Abstract: Provided is a device that includes an interface operatively coupled to a locked redundant array of independent disks (LRAID) including M (M>1) memory dice, the M memory dice stores stripes of data, and each stripe spanning over the M memory dice; and control circuitry that performs data compression on data to generate compressed data; stores the compressed data in the stripes; generates parity data of each stripe; determines, for each stripe, memory dice required to store the compressed data; determines, for each stripe, whether memory dice required to store the compressed data in each stripe is N memory dice or less; where N is an integer less than M; and determines, for each stripe, which stripes will store the parity data of a respective stripe based on the determination of whether the memory dice required to store the compressed data in the respective stripe is N memory dice or less.

Abstract: Some embodiments include a method of forming an assembly. A first stack of alternating first and second tiers is formed over a conductive structure. A first opening is formed to extend through the first stack. A sidewall of the first opening is lined with a first liner material. The first liner material is converted to a first charge-blocking material. Sacrificial material is formed within the first opening. A second stack of alternating third and fourth tiers is formed over the first stack. A second opening is formed to extend through the second stack to the sacrificial material. A second liner material is formed within the second opening, is anisotropically etched, and is then converted to a second charge-blocking material. The sacrificial material is removed. Charge-storage material, dielectric material and channel material are formed adjacent to the charge-blocking material. Some embodiments include integrated assemblies.

Abstract: Some embodiments include an integrated assembly having a source structure, and having a stack of alternating conductive levels and insulative levels over the source structure. Cell-material-pillars pass through the stack. The cell-material-pillars are arranged within a configuration which includes a first memory-block-region and a second memory-block-region. The cell-material-pillars include channel material which is electrically coupled with the source structure. Memory cells are along the conductive levels and include regions of the cell-material-pillars. A panel is between the first and second memory-block-regions. The panel has a first material configured as a container shape. The container shape defines opposing sides and a bottom of a cavity. The panel has a second material within the cavity. The second material is compositionally different from the first material. Some embodiments include methods of forming integrated assemblies.

Abstract: Methods, systems, and devices for sequential write operations using multiple memory dies are described. A memory system may be configured to support write operations that include writing respective subsets of a sequence of data to each first memory die of a set of multiple first memory dies, and then writing the sequence of data to a second memory die (e.g., based on reading the respective subsets of the sequence of data from the set of first memory dies). In some examples, such techniques may be implemented with memory dies having different memory cell storage densities. For example, the set of multiple first memory dies may be operated in accordance with relatively lower storage densities to leverage relatively faster access operations, whereas the second memory die may be operated in accordance with a relatively higher storage density to leverage relatively higher capacity.

Abstract: Disclosed are devices and methods for improving the pre-booting of electronic control unit devices in vehicles. In one embodiment, a method is disclosed comprising detecting a triggering of a pre-booting condition based on one or more interactions with a vehicle; transmitting a power-on signal to at least one electronic control unit (ECU) in the vehicle, the at least one ECU operating in a low-power state; and fully booting the at least one ECU upon determining that the vehicle has been started.

Abstract: Systems, methods and apparatus of integrated image sensing devices. In one example, a system includes a sensor that generates data. A memory device stores the generated data, and further stores a first portion of an artificial neural network (ANN). A host interface of the system is configured to communicate with a host system that stores a second portion of the ANN. The memory device can be stacked with the sensor. The memory device includes an inference engine configured to generate inference results using the stored data as input to the first portion of the ANN. The host interface is further configured to send the inference results to the host system for processing by the host system using the second portion of the ANN.

Abstract: A memory device having a memory array with a plurality of memory cells electrically coupled to a plurality of wordlines and a plurality of bitlines and control logic coupled with the memory array. The control logic perform operations including: determining a metadata value characterizing a first read level voltage of a highest threshold voltage distribution of a subset of the plurality of memory cells, wherein the metadata value comprises at least one of a failed byte count or a failed bit count; adjusting, based on the metadata value, a second read level voltage for a second-highest threshold voltage distribution of the subset of the plurality of memory cells; and causing, to perform an initial calibrated read of the subset of the plurality of memory cells, the adjusted second read level voltage to be applied to a wordline of the plurality of wordlines to read the second-highest threshold voltage distribution.

Abstract: Systems and methods of memory operation involving dynamic adjustment of write policy based on performance needs are disclosed. In one embodiment, an exemplary method may comprise monitoring memory performance parameters related to a programming operation being scheduled, selecting a write policy based on the memory performance parameters monitored, executing a memory control process that is configured to switch between the first addressing scheme and the second addressing scheme, and programming a first superpage of the programming operation using the first addressing scheme and programing a second superpage of the programming operation using the second addressing scheme.

Abstract: Disclosed herein is an apparatus that includes a plurality of signal wiring patterns, a plurality of shield patterns each provided between corresponding two of the signal wiring patterns, a common pattern coupled to each of the plurality of shield patterns, and a transistor coupled between the common pattern and a power line supplied with a fixed power potential.

Abstract: Some embodiments include an integrated assembly having a first bottom electrode adjacent to a second bottom electrode. An intervening region is directly between the first and second bottom electrodes. Capacitor-insulative-material is adjacent to the first and second bottom electrodes. The capacitor-insulative-material is substantially not within the intervening region. Top-electrode-material is adjacent to the capacitor-insulative-material. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having a base supporting first circuitry and first conductive lines. The first conductive lines extend along a first direction and are associated with the first circuitry. A deck is over the base and supports an array of memory cells and second conductive lines which are associated with the array of memory cells. The second conductive lines extend along a second direction which is substantially orthogonal to the first direction. Vertical interconnects extend from the deck to the base and couple the first conductive lines to the second conductive lines. Each of the vertical interconnects couples one of the first conductive lines to one of the second conductive lines. Each of the second conductive lines is coupled with only one of the first conductive lines.

Abstract: Techniques are provided for accessing two memory cells of a memory tile concurrently. A memory tile may include a plurality of self-selecting memory cells addressable using a row decoder and a column decoder. A memory controller may access a first self-selecting memory cell of the memory tile using a first pulse having a first polarity to the first self-selecting memory cell. The memory controller may also access a second self-selecting memory cell of the memory tile concurrently with accessing the first self-selecting memory cell using a second pulse having a second polarity different than the first polarity. The memory controller may determine characteristics of the pulses to mitigate disturbances of unselected self-selecting memory cells of the memory tile.

Abstract: An electronic device comprising a lower deck and an upper deck adjacent to a source. Each of the lower deck and the upper deck comprise tiers of alternating conductive materials and dielectric materials. Each of the lower deck and the upper deck also comprise an array region and one or more non-array regions. Memory pillars are in the lower deck and the upper deck of the array region and the memory pillars are configured to be operably coupled to the source. Dummy pillars are in the upper deck of the one or more non-array regions and the dummy pillars are configured to be electrically isolated from the source. Another conductive material is in the upper deck and the lower deck of the one or more non-array regions. Additional electronic devices and related systems and methods of forming an electronic device are also disclosed.

Abstract: A method that is part of a method of forming an elevationally-extending string of memory cells comprises forming an intervening structure that is elevationally between upper and lower stacks that respectively comprise alternating tiers comprising different composition materials. The intervening structure is formed to comprise an elevationally-extending-dopant-diffusion barrier and laterally-central material that is laterally inward of the dopant-diffusion barrier and has dopant therein. Some of the dopant is thermally diffused from the laterally-central material into upper-stack-channel material. The dopant-diffusion barrier during the thermally diffusing is used to cause more thermal diffusion of said dopant into the upper-stack-channel material than diffusion of said dopant, if any, into lower-stack-channel material. Other embodiments, including structure independent of method, are disclosed.

Abstract: A system having multiple devices that can host different versions of an artificial neural network (ANN) as well as different versions of a feature dictionary. In the system, encoded inputs for the ANN can be decoded by the feature dictionary, which allows for encoded input to be sent to a master version of the ANN over a network instead of an original version of the input which usually includes more data than the encoded input. Thus, by using the feature dictionary for training of a master ANN there can be reduction of data transmission.

Abstract: In some implementations, a device may receive, from a sensor of a vehicle, sensor data. The device may detect whether an event causing damage to the vehicle has occurred or is expected to occur based on the sensor data being greater than a threshold, wherein the threshold is based on an on-off status of the vehicle and a sensor type. The device may activate, based on whether the event has occurred or is expected to occur, a camera of the vehicle to capture video data of a scene associated with the vehicle. The device may transmit, to a server, an indication that indicates the event and the video data.