Abstract: Row hammer attacks takes advantage of unintended and undesirable side effects of memory devices in which memory cells interact electrically between themselves by leaking their charges and possibly changing the contents of nearby memory rows that were not addressed in an original memory access. Row hammer attacks are mitigated by using a victim cache. Data is written to cache lines of a cache. A least recently used cache line of the cache is written to the victim cache.

Abstract: Systems, apparatuses, and methods related to securing domain crossing using domain access tables are described. For example, a computer processor can have registers configured to store locations of domain access tables respectively for predefined, non-hierarchical domains. Each respective domain access table can be pre-associated with a respective domain and can have entries configured to identify entry points of the respective domain. The processor is configured to enforce domain crossing in instruction execution using the domain access tables and to prevent arbitrary and/or unauthorized domain crossing.

Abstract: Disclosed in some examples are systems, devices, machine-readable mediums, and methods for customizing an in-memory versioning mode for each memory location according to a predicted access behavior to optimize memory device performance. Usage data in a previous time period may be utilized along with policy rules to determine whether to configure a particular memory address as a zero copy or direct copy mode. For example, memory addresses that are read frequently may be configured as direct copy mode to reduce the read latency penalty. This improves the functioning of the memory system by reducing read latency for memory addresses that are frequently read but written to less frequently, and reduces write latency for memory locations that are frequently written to, but not read as frequently.

Abstract: Methods, systems, and devices for memory with parallel main and test interfaces are described. A memory die may be configured with parallel interfaces that may individually (e.g., separately) support evaluation operations (e.g., before or as part of assembly in a multiple-die stack) or access operations (e.g., after assembly in a multiple die stack). For example, a memory die may include a first set of one or more contacts that support communicating signaling with or via another memory die in a multiple-die stack. The memory die may also include a second set of one or more contacts that support probing for pre-assembly evaluations, which may be electrically isolated from the first set of contacts. By implementing such parallel interfaces, evaluation operations may be performed using the second set of contacts without damaging the first set of contacts, which may improve capabilities for supporting a multiple-die stack in a memory device.

Abstract: An example apparatus includes: first and second sense amplifier regions arranged such that the memory mat is sandwiched between the first and second sense amplifier regions in a first direction, the first and second sense amplifier regions including first and second sense amplifiers, respectively; and first and second array control circuit regions arranged in the first direction, the first and second array control circuit regions including first and second array control circuits configured to control the first and second sense amplifiers, respectively. Each of the first and second array control circuit regions includes a first well region in which a first circuit part of each of the first and second array control circuits are arranged, respectively. The first well region of the first array control circuit region and the first well region of the second array control circuit region are integrated.

Abstract: One example of a memory device includes an array of flash memory cells, an array of Dynamic Random Access Memory (DRAM) memory cells, and a controller. The controller is configured to execute first instructions stored in the array of DRAM memory cells to access the array of flash memory cells.

Abstract: Apparatuses and methods per-row count based refresh target identification. A memory device stores count values associated with the word lines. An aggressor detector circuit stores a maximum of the count values and a row address associated with the maximum count value. Responsive to a targeted refresh signal, the stored count value is compared to a threshold. If the count value has crossed the threshold, then a targeted refresh operation may be performed on one or more refresh addresses based on the stored address, and the count value may be reset.

Abstract: Examples described herein include systems and methods which include wireless devices and systems with examples of mixing input data delayed versions of at least a portion of the respective processing results with coefficient data specific to a processing mode selection. For example, a computing system with processing units may mix the input data delayed versions of respective outputs of various layers of multiplication/accumulation processing units (MAC units) for a transmission in a radio frequency (RF) wireless domain with the coefficient data to generate output data that is representative of the transmission being processed according to a wireless processing mode selection. In another example, such mixing input data with delayed versions of processing results may be to receive and process noisy wireless input data. Examples of systems and methods described herein may facilitate the processing of data for 5G wireless communications in a power-efficient and time-efficient manner.

Abstract: Methods, systems, and devices for decoder architectures for three-dimensional memory devices are described. In some cases, a decoder for a memory device may include two portions. A first portion of the decoder may be manufactured on top of the memory array, and may include a pillar decoding portion to selectively bias a first array of decoding elements coupled with conductive pillars of the memory array and a word line decoding portion to selectively bias a second array of decoding elements coupled with word lines of the memory array. A second portion of the decoder may be implemented in a separate semiconductor device which may include a set of logic circuits configured to drive signal to a set of contacts bonded to contacts of the first portion to drive the digit lines, voltage sources, and gate lines.

Abstract: Examples described herein utilize multi-layer neural networks, such as multi-layer recurrent neural networks to estimate an error-reduced version of encoded data based on a retrieved version of encoded data (e.g., data encoded using one or more encoding techniques) from a memory. The neural networks and/or recurrent neural networks may have nonlinear mapping and distributed processing capabilities which may be advantageous in many systems employing a neural network or recurrent neural network to estimate an error-reduced version of encoded data for an error correction coding (ECC) decoder, e.g., to facilitate decoding of the error-reduced version of encoded data at the decoder. In this manner, neural networks or recurrent neural networks described herein may be used to improve or facilitate aspects of decoding at ECC decoders, e.g., by reducing errors present in encoded data due to storage or transmission.

Abstract: A method includes receiving signaling indicative of performance of a sanitization operation to a processing device coupled to a memory device and applying a sanitization voltage to a plurality of memory blocks of the memory device. The sanitization voltage can be greater than an erase voltage of the plurality of memory blocks.

Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating first and second levels. A panel extends through the stack. The first levels have proximal regions adjacent the panel, and have distal regions further from the panel than the proximal regions. The distal regions include conductive structures. The conductive structures have a first thickness. The proximal regions include insulative structures. The insulative structures have a second thickness at least about as large as the first thickness. Some embodiments include methods of forming integrated assemblies.

Abstract: Disclosed in some examples, are methods, systems, devices, and machine readable mediums that store instructions for programmable atomic transactions in a memory of the programmable atomic unit prior to execution of the programmable atomic transaction. The memory in some examples may be an instruction RAM. The memory in some examples may be partitioned into partitions of a fixed size that stores a same number of instructions. Each programmable atomic transaction may use one or more contiguously located instruction partitions. By loading the instructions ahead of time, the instructions are ready for execution when the transaction is requested.

Abstract: Apparatuses, systems, and methods for using defrag levels to reduce data loss are provided herein. In a number of embodiments of the present disclosure, a method can include setting a first defrag level for a memory device, determining if a buffer is full while performing defrag operations on the memory device according to the first defrag level, setting a second defrag level for the memory device in response to determining the buffer is full while performing defrag operations according to the first defrag level.

Abstract: A channel width can depend on a quantity of memory units (e.g., memory dice) that forms a channel as well as a size of the memory units. A memory system can operate with memory units configured to exchange (e.g., transfer to and/or from) data at a rate of smaller granularity that can provide more various options for channel widths, which can further allow a fine-tuned optimization of the memory system in association with its bandwidth and latency in transferring data from and/or to the memory units. The channels whose channel width is fine-tuned with such memory units can be further used to provide a reliability, availability, and serviceability (RAS) protection, such as a redundant array of independent disks (RAID) protection.

Abstract: Described apparatuses and methods facilitate bus training with multiple dice, such as multiple memory dice. A controller can communicate with multiple dice to perform bus training by sending a test pattern and receiving in return a feedback pattern indicative of the bits detected by the dice. Because suitable signal timing can differ between dice, even those using the same bus, a controller may train each die separately from the others. In some situations, however, individualized training may be infeasible. To accommodate such situations, logic associated with two or more dice can combine, using at least one logical operation, bits as detected from the test pattern into a combined feedback pattern. A timing parameter that is jointly suitable for multiple dice can be determined, and the bus training may be concluded, responsive to the combined feedback pattern matching the test pattern. The multiple dice may be stacked or linked.

Abstract: Apparatuses including output drivers and methods for providing output data signals are described. An example apparatus includes a high logic level driver, a low logic level driver, and an intermediate logic level driver. The high logic level driver is provided a first voltage and provides a high logic level voltage to a data terminal when activated. The low logic level driver is provided a second voltage and provides a low logic level voltage to the data terminal when activated. The intermediate logic level driver is provided a third voltage having a magnitude that is between the first and second voltages, and provides an intermediate logic level voltage to the data terminal when activated. Each of the high, low, and intermediate logic level drivers are configured to be respectively activated based on one or more of a plurality of control signals.

Abstract: Methods, systems, and devices for performance monitoring for a memory system are described. A memory system may use a set of counters to determine state information for the memory system. The memory system may also use a set of timers to determine latency information for the memory system. In response to a request for performance information, the memory system may transmit state information, latency information, or both to a host system.

Abstract: Methods, systems, and apparatuses include receiving a current free space value and a historic delta value. A delta value is calculated using the current free space value, a target free space value, and the historic delta value. A delta region is determined using the delta value. A new host rate is calculated using the determined delta region, the calculated delta value, and the historic delta value. The new host rate is sent to a host device causing the host device to change a current host rate to the new host rate.

Abstract: Methods of exposing conductive vias of semiconductor devices may involve positioning a barrier material over conductive vias extending from a backside surface of a substrate to at least substantially conform to the conductive vias. A self-planarizing isolation material may be positioned on a side of the barrier material opposing the substrate. An exposed surface of the self-planarizing isolation material may be at least substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of at least some of the conductive vias may be removed to expose each of the conductive vias. Removal may be stopped after exposing at least one laterally extending portion of the barrier material proximate the substrate.