Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including detecting a read error with respect to data residing in a first block of the memory device, wherein the first block is associated with a voltage offset bin; determining a most recently performed error-handling operation performed on a second block associated with the voltage offset bin; and performing the error-handling to recover the data.

Abstract: Described are semiconductor interposer, and microelectronic device assemblies incorporating such semiconductor interposers. The described interposers include multiple redistribution structures on each side of the core; each of which may include multiple individual redistribution layers. The interposers may optionally include circuit elements, such as passive and/or active circuit. The circuit elements may be formed at least partially within the semiconductor core.

Abstract: A system for providing forensic tracing of memory device content erasure and tampering is disclosed. The system uses a special command that enables forensic tracing in a secure memory device. Once the forensic tracing is enabled, firmware of the memory device tracks the data stored on the memory device. The command specifies whether the tracking and tracing is for the entire memory device or for a region of the memory device. The firmware confirms that the forensic tracing is enabled, and a target protection region is defined. Once an authenticated command for an operation to access, modify, or erase data of the memory device is received from a host, the system enables the operation to proceed. The system creates a trace of the operation and the metadata of the target region that is modified within a secure memory region of the memory device that is not addressable by the host device.

Abstract: Methods, apparatuses, and systems for tensor memory access are described. Multiple data located in different physical addresses of memory may be concurrently read or written by, for example, employing various processing patterns of tensor or matrix related computations. A memory controller, which may comprise a data address generator, may be configured to generate a sequence of memory addresses for a memory access operation based on a starting address and a dimension of a tensor or matrix. At least one dimension of a tensor or matrix may correspond to a row, a column, a diagonal, a determinant, or an Nth dimension of the tensor or matrix. The memory controller may also comprise a buffer configured to read and write the data generated from or according to a sequence of memory of addresses.

Abstract: The disclosed embodiments relate to authenticating devices to a cellular network. In one embodiment, a method is disclosed comprising reading a mobile identifier from a storage area of a memory device, the mobile identifier comprising a value associated with a subscriber of a cellular network; signing the mobile identifier using a private key to generate a digital signature, the private key generated using a physically unclonable function (PUF); transmitting the digital signature and a public key to a cellular network, the public key associated with the private key; and receiving, from the cellular network, a confirmation of access to the cellular network, the confirmation generated based on the public key and the digital signature.

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a lower portion of a stack that will comprise vertically-alternating first tiers and second tiers. The stack comprises laterally-spaced memory-block regions. Material of the first tiers is of different composition from material of the second tiers. The lower portion comprises an upper second tier comprising insulative material. The vertically-alternating first tiers and second tiers of an upper portion of the stack are formed above the lower portion. Channel-material strings are formed that extend through the upper portion to the lower portion. Horizontally-elongated lines are formed in the upper second tier longitudinally-along opposing lateral edges of the memory-block regions. Material of the lines is of different composition from that of the insulative material in the upper second tier that is laterally-between the lines.

Abstract: Methods, systems, and devices for configurable types of write operations are described. A memory device may receive a write command to write data in a zone of a memory system. The memory device may identify a physical address to store the data using a cursor associated with the zone based at least in part on receiving the write command. In some examples, the cursor may be associated with a type of a write operation based on a quantity of data associated with the cursor. As such, the memory device write, using a first type of the write operation or a second type of the write operation in accordance with the quantity of data, the data, and an indication of the type of the write operation used to write the data into the memory system.

Abstract: An energy-efficient and area-efficient, mitigation of errors in a memory media device that are caused by row hammer attacks and the like is described. The detection of errors is deterministically performed while maintaining, in an SRAM, a number of row access counters that is smaller than the total number of rows protected in the memory media device. The reduction of the number of required counters is achieved by aliasing a plurality of rows that are being protected to each counter. The mitigation may be implemented on a per-bank basis, per-channel basis or per-memory media device basis. The memory media device may be DRAM.

Abstract: Methods, systems, and devices for speed bins to support memory compatibility are described. A host device may read a value of a register including serial presence detect data of a memory module. The serial presence detect data may be indicative of a timing constraint for operating the memory module at a first clock rate, where the timing constraint and the first clock rate may be associated with a first speed bin. The host device may select, for communication with the memory module, a second speed bin associated with a second clock rate at the host device and the timing constraint, where the host device may support operations according to a set of timing constraints that includes a set of values. The timing constraint may be selected from a subset of the set of timing constraints, where the subset may be exclusive of at least one of the set of values.

Abstract: Methods, systems, and devices for command scheduling for a memory system are described. A memory system may be configured to analyze a received command during an initialization procedure for one or more components. In some examples, the memory system may initialize an interface and one or more processing elements as part of an initialization procedure upon transitioning from a first power mode to a second power mode. Accordingly, the command may be analyzed while the processing elements are being initialized such that, upon the processing elements being fully initialized, the command may be processed (e.g., executed).

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a memory cell, first, second, and third data lines, and first and second access lines. Each of the first, second, and third data lines includes a length extending in a first direction. Each of the first and second access lines includes a length extending in a second direction. The memory cell includes a first transistor including a charge storage structure, and a first channel region electrically separated from the charge storage structure, and a second transistor including a second channel region electrically coupled to the charge storage structure. The first data line is electrically coupled to the first channel region. The second data line is electrically coupled to the first channel region. The third data line is electrically coupled to the second channel region, the second channel region being between the charge storage structure and the third data line.

Abstract: A system and a memory device including a driver circuit, to perform first operations including driving a resistor-capacitor (RC) sensor circuit of an electronic device to a drive voltage using a representative copy of a current that drives an electronic circuit line of the electronic device. The system and memory device including the RC sensor circuit, coupled to the driver circuit, to perform second operations including determining a first sample voltage by sampling a first representative voltage generated at the RC sensor circuit, and determining a second sample voltage by sampling a second representative voltage generated at the RC sensor circuit. The ratio of the first sample voltage and the second sample voltage is indicative of an RC time constant of the electronic circuit line.

Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.

Abstract: Methods, systems, and apparatuses related to computational storage are described. For example, storage accessible to an accelerator may be shared between and, accessible to either of, a host and the accelerator. A computational storage system may include storage providing a portion of a shared file system accessible by a host and by accelerator logic of the computational storage system. Host interface logic may be configured to receive a storage command from the host to store data on the storage at a time the data is created. The host interface logic may be further configured to receive a storage command from the host for the accelerator logic to perform a computational task using the stored data on the storage. The accelerator logic can perform the computational task using the stored data on the storage.

Abstract: Provided is a device that includes an interface operatively coupled to a locked redundant array of independent disks including M (M>1) memory dice, the M memory dice stores stripes of data, and each stripe spanning over the M memory dice; and control circuitry that performs data compression on data to generate compressed data; stores the compressed data in the stripes; generates parity data of each stripe; determines, for each stripe, memory dice required to store the compressed data; determines, for each stripe, whether the memory dice required to store the compressed data in each stripe is N memory dice or less; where N is an integer less than M; and determines, for each stripe, which stripes will store the parity data of a respective stripe based on the determination of whether the memory dice required to store the compressed data in the respective stripe is N memory dice or less.

Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.

Abstract: A reconfigurable compute fabric can include multiple nodes, and each node can include multiple tiles with respective processing and storage elements. The tiles can be arranged in an array or grid and can be communicatively coupled. In an example, the tiles can be arranged in a one-dimensional array and each tile can be coupled to its respective adjacent neighbor tiles using a direct bus coupling. Each tile can be further coupled to at least one non-adjacent neighbor tile that is one tile, or device space, away using a passthrough bus. The passthrough bus can extend through intervening tiles.

Abstract: Described are systems and methods for all level coarse/fine programming of memory cells.

Abstract: An on-die controller can provide an error correction capability for data stored in an array of memory cells located on the same die as the on-die controller. The error correction capability provided by the on-die controller eliminates a need to transfer error correction code (ECC) data to an external controller that may have provided the error correction capability in lieu of the on-die controller, which can provide more channel bandwidth for other types of non-user data for further strengthening data reliability, security, integrity of the memory system.

Abstract: A memory system may implement a read operation including a delay if a channel is at stable state, and may implement a read operation without a delay if the channel is in a transient state. Upon receiving a read command to a set of memory cells sharing the channel, the memory system may determine whether the channel is in a stable or transient state. If the channel is in a stable state, the memory system may perform a read operation including a delay between boosting the channel and driving respective word lines, such that the channel partially discharges prior to driving the word lines. If the channel is in a transient state, the memory system may perform a read operation without a delay between boosting the channel and driving the word lines.