Abstract: A method of manufacturing according to an embodiment of the present invention includes forming a seed metal layer 20a on a supporting substrate 70, forming an interconnect layer 10 including an interconnect 18 on the seed metal layer 20a, removing the supporting substrate 70 after forming the interconnect layer 10, and patterning the seed metal layer 20a thus to form an interconnect 20 after removing the supporting substrate.

Abstract: The semiconductor device of the present invention includes a first insulating film on a substrate having a first region and a second region, a light shielding film formed in the first region and an interconnect film formed in the second region in the first insulating film and a second insulating film having a first concave portion above the light shielding film in the first region and an interconnect hole having a via hole and a second concave portion in the second region in the second insulating film on the first insulating film, wherein an area of the light shielding film is overlapping an area of the first plurality of concave portions.

Abstract: Disclosed is a display controlling apparatus including latch circuits for holding color data of a current line and a previous line, a latch circuit for holding a polarity signal of the previous line, and a recovery control circuit. The recovery control circuit controls a recovery switch from color data of the previous and current lines, a polarity signal and a recovery clock. For both driving method employing frame-based common inverting and the driving method employing line-based common inverting, the display/controlling apparatus recovers electric charge efficiently to provide for low power dissipation.

Abstract: The present invention provides an interrupt generation circuit that can reduce the time between the moment a monitored object actually enters a desired state and the moment an interrupt is generated. An external event detection unit 101 detects the effective edge of an external event signal. A count period generation circuit 103 generates external event division signals which are counted by the main timer 104 and each of which has a period that is 1/N of the time interval between the effective edges of the immediately preceding external event signal. A compare register 105 stores a value corresponding to the time at which an interrupt is to be generated. When the count value of the main timer 104 becomes equal to or larger than the value stored in the compare register 105, the interrupt determination circuit 106 generated an interrupt.

Abstract: In an aspect of the present invention, an ESD (Electrostatic Discharge) protection element includes a bipolar transistor comprising a collector diffusion layer connected with a first terminal and an emitter diffusion layer; and current control resistances provided for a plurality of current paths from a second terminal to the collector diffusion layer through the emitter diffusion layer, respectively. The bipolar transistor further includes a base diffusion region connected with the second terminal through a first resistance which is different from the current control resistances.

Abstract: In a display panel driver an output amplifier circuit includes a first output stage to receive a power supply voltage and a first voltage lower thereto and to output a drive voltage in a first voltage range defined between the power supply voltage and a middle power supply voltage; and a second output stage to receive the power supply and ground voltages and to output a drive voltage between the power supply and ground voltages. In a first mode that the first voltage is set as the middle power supply voltage, the first output stage outputs a first drive voltage in the first voltage range to one of first and second output terminals. In a second mode that the first voltage is set as the ground voltage, the second output stage outputs a first drive voltage in the first voltage range to one of the first and second output terminals.

Abstract: The semiconductor device of the present invention comprises a semiconductor substrate; and a conductive element formed on the semiconductor substrate and capable of being opened when a predetermined current flows, wherein the conductive element turns plurality of times.

Abstract: A semiconductor integrated circuit includes a sampling unit, a delay unit, a first operating unit and a second operating unit. The sampling unit samples an input signal supplied from an external circuit in synchronization with a clock signal, and outputs the sampled input signal as a first signal. The delay unit delays the first signal in synchronization with the clock signal, and outputs the delayed first signal as a second signal. The first operating unit operates whether a signal level of the input signal is sustained equal to or longer than a predetermined period based on the first and second signals, and outputs an output signal in synchronization with the clock signal when the signal level of the input signal is sustained equal to or longer than the predetermined period. A signal level of the output signal is sustained equal to or longer than the predetermined period. The second operating unit asynchronously controls the sampling unit based on the input signal and the output signal.

Abstract: The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

Abstract: Aimed at stably forming sheared surfaces of leads of semiconductor devices, and at raising ratio of formation of plated layers onto the sheared surfaces of the leads, a lead cutter has a die 106, and a cutting punch 110 having a cutting edge at least on the surface facing the die, wherein clearance T between the die 106 and the cutting punch 110 is set within the range from not smaller than 2.3% and smaller than 14.0% of the total thickness of the leads to be cut and plated layers formed on the upper and the lower surfaces thereof.

Abstract: There is disclosed a processing apparatus including, as an instruction set, a complex conditional branch instruction, and a condition setting instruction. The complex conditional branch instruction is an instruction for performing comparison operation for one or each of a plural number of conditions, and for performing branching to a branch target specified, based on comparison operation between the results of the comparison operations performed and the branching condition value specified. The condition setting instruction is an instruction for setting the condition.

Abstract: A level shift circuit insusceptible to mistaken operations at the time of disengagement of a standby state is disclosed. The level shift circuit includes a level converter circuit 5, a barrier gate circuit 2 and a holding circuit (MMP1, MMP2). The level converter circuit converts a signal level of a circuit operating in a VDD1 system to a signal level of a VDD2 system. The barrier gate circuit is responsive to a standby signal (STBY) to fix input signals (AB, AAB) of the level converter circuit 5 at a LOW level. The holding circuit holds an output of the level converter circuit 5 at a constant voltage when the input signals (AB, AAB) are at the LOW level (FIG. 1).

Abstract: The semiconductor device includes a silicon interposer made of a semiconductor and a first semiconductor chip mounted on one surface of the silicon interposer. The semiconductor device is provided with a through electrode penetrating the silicon interposer and having a side surface insulated from the silicon interposer; and a wiring connecting one end of the through electrode and the silicon interposer. The through electrode is connected to a power supply wiring or a GND wiring provided on the first semiconductor chip.

Abstract: A USB interface apparatus is provided in electronic equipment on a USB packet transmission side, and includes a conversion unit for converting CRC object data which is data contained in a field subjected to CRC calculation in a USB packet, based on a predetermined rule corresponding to reverse conversion of conversion to be performed on the CRC object data by destination electronic equipment; a CRC calculation unit for calculating a CRC of CRC object data obtained before conversion by the conversion unit; and a packet generation unit for generating a USB packet containing data converted by the conversion unit and the CRC calculated by the CRC calculation unit.

Abstract: A semiconductor device includes: input terminals identified by channel numbers and configured to receive analog signals; analog input pads identified by pad numbers and connected with whole or part of the input terminals; a data holding section configured to hold a data of the input terminals; a channel designating section configured to generate a channel designation signal to designate one of the channel numbers; and a channel translating section configured to translate the channel number indicated by the channel designation signal into a specific one of the pad numbers based on the held data. An A/D converting section is configured to convert the analog signal inputted from the analog input pad corresponding to the specific pad number into a digital signal.

Abstract: An improved reliability in a region of a junction between a bonding wire and an electrode pad at higher temperature is achieved. A semiconductor device 100 includes a semiconductor chip 102, AlCu pads 107, which are provided in the semiconductor chip 102 and which contain Al as a major constituent and additionally contain copper (Cu), and CuP wires 111, which function as coupling members for connecting inner leads 117 provided outside of the semiconductor chip 102 with the semiconductor chip 102, and primarily contain Cu. The AlCu pads 107 and the CuP wires 111 are encapsulated with an encapsulating resin 115 that contains substantially no halogen.

Abstract: A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer.

Abstract: A semiconductor device has a plurality of fuse element portions each of which including a first fuse interconnect having a fuse to be portion, a second fuse interconnect connected to an internal circuit, a first impurity diffusion layer for electrically connecting the first fuse interconnect and the second fuse interconnect, and a second impurity diffusion layers. The first fuse interconnect, the second fuse interconnect, and the first impurity diffusion layer of each of the plurality of fuse element portions are arranged approximately parallel to one another at a predetermined pitch distance.

Abstract: A level shift circuit includes a drive transistor, a first PMOS transistor, and first and second clamp transistors of PMOS type. The drive transistor, which drives the gate of the high-side NMOS transistor in a power semiconductor device, has a source-drain path coupled between a boot potential generated by a bootstrap circuit provided in the semiconductor device and a source potential of the high-side NMOS transistor. The first PMOS transistor has a source coupled to the boot potential, and a drain coupled to the gate of the drive transistor. The first clamp transistor has a gate coupled to the source potential of the high-side NMOS transistor, and a source coupled to the drain of the first PMOS transistor. The second clamp transistor has a gate coupled to the source potential of the high-side NMOS transistor, and a source coupled to the gate of the first PMOS transistor.

Abstract: Configuration codes for implementing a plurality of circuits having different attributes are generated and stored in a memory for each task executed in a reconfigurable device. When the reconfigurable device is operated, an appropriate circuit to be executed by the reconfigurable device is selected in accordance with an operation state of the system from among a plurality of circuits having different attributes, and the configuration code for implementing the selected circuit is loaded from the memory into the reconfigurable device.